公开(公告)号：US10177139B2

公开(公告)日：2019-01-08

申请号：US15865774

申请日：2018-01-09

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Nevada J. Sanchez ,  Susan A. Alie

IPC: H01L23/528 ,  B81B3/00 ,  H01L27/06 ,  B06B1/02 ,  B81B7/00 ,  B81C1/00 ,  H01L21/3213 ,  H01L21/56 ,  H01L21/768 ,  H01L21/8238 ,  H01L23/522 ,  A61B8/00 ,  H01L27/092

Abstract: Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.

公开(公告)号：US10175206B2

公开(公告)日：2019-01-08

申请号：US15689863

申请日：2017-08-29

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston

IPC: G01N29/24 ,  B81C1/00 ,  B06B1/02 ,  A61B8/00 ,  B81B7/00

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

公开(公告)号：US20180257927A1

公开(公告)日：2018-09-13

申请号：US15453846

申请日：2017-03-08

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston ,  Jaime Scott Zahorian

IPC: B81C1/00 ,  B81B7/00 ,  B06B1/06 ,  B06B1/02

CPC classification number: B81C1/00238 ,  B06B1/0292 ,  B06B1/0622 ,  B81B7/008 ,  B81B2201/038 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2201/013 ,  B81C2203/0118 ,  B81C2203/0792

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

公开(公告)号：US20180130795A1

公开(公告)日：2018-05-10

申请号：US15865774

申请日：2018-01-09

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Nevada J. Sanchez ,  Susan A. Alie

IPC: H01L27/06 ,  H01L27/092 ,  A61B8/00 ,  B06B1/02 ,  B81B3/00 ,  H01L23/528 ,  H01L23/522 ,  H01L21/8238 ,  H01L21/768 ,  H01L21/56 ,  H01L21/3213 ,  B81C1/00 ,  B81B7/00

CPC classification number: H01L27/0617 ,  A61B8/00 ,  A61B8/4494 ,  B06B1/02 ,  B06B1/0292 ,  B06B2201/51 ,  B81B3/0021 ,  B81B7/0006 ,  B81B2201/0271 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01L21/32134 ,  H01L21/56 ,  H01L21/768 ,  H01L21/76838 ,  H01L21/823871 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/0688 ,  H01L27/092 ,  H01L2224/16225

Abstract: Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.

公开(公告)号：US09910018B2

公开(公告)日：2018-03-06

申请号：US15177977

申请日：2016-06-09

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston

IPC: H01L29/84 ,  H01L21/30 ,  G01N29/24 ,  B81C1/00 ,  B06B1/02 ,  A61B8/00 ,  B81B7/00

CPC classification number: G01N29/2406 ,  A61B8/4483 ,  B06B1/0292 ,  B81B7/007 ,  B81B2201/0271 ,  B81C1/00238 ,  B81C1/00301 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/0792 ,  H01L2224/4813 ,  H01L2924/0002 ,  H01L2924/146 ,  H01L2924/1461

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

公开(公告)号：US09910017B2

公开(公告)日：2018-03-06

申请号：US15177899

申请日：2016-06-09

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston

IPC: H01L21/00 ,  H01L21/30 ,  G01N29/24 ,  B81C1/00 ,  B06B1/02 ,  A61B8/00 ,  B81B7/00

CPC classification number: G01N29/2406 ,  A61B8/4483 ,  B06B1/0292 ,  B81B7/007 ,  B81B2201/0271 ,  B81C1/00238 ,  B81C1/00301 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/0792 ,  H01L2224/4813 ,  H01L2924/0002 ,  H01L2924/146 ,  H01L2924/1461

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

公开(公告)号：US20180003678A1

公开(公告)日：2018-01-04

申请号：US15689863

申请日：2017-08-29

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston

IPC: G01N29/24 ,  B81C1/00 ,  A61B8/00 ,  B06B1/02 ,  B81B7/00

CPC classification number: G01N29/2406 ,  A61B8/4483 ,  B06B1/0292 ,  B81B7/007 ,  B81B2201/0271 ,  B81C1/00238 ,  B81C1/00301 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/0792 ,  H01L2224/4813 ,  H01L2924/0002 ,  H01L2924/146 ,  H01L2924/1461

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

公开(公告)号：US20170157646A1

公开(公告)日：2017-06-08

申请号：US14957098

申请日：2015-12-02

Applicant: Butterfly Network, Inc.

Inventor： Susan A. Alie ,  Jaime Scott Zahorian ,  Kailiang Chen

IPC: B06B1/02

CPC classification number: B06B1/02 ,  B06B1/0292

Abstract: Electrical biasing of ultrasonic transducers of an ultrasound device is described. The ultrasonic transducers may be capacitive micromachined ultrasonic transducers (CMUTs). The ultrasonic transducers may be grouped together, with the different groups receiving different bias voltages. The bias voltages for the various groups of ultrasonic transducers may be selected to account for differences between the groups.

公开(公告)号：US20200070206A1

公开(公告)日：2020-03-05

申请号：US16679500

申请日：2019-11-11

Applicant: Butterfly Network, Inc.

Inventor： Susan A. Alie ,  Keith G. Fife ,  Joseph Lutsky ,  David Grosjean

IPC: B06B1/02 ,  B81B3/00 ,  G01N29/24 ,  B81C1/00 ,  G01N29/22

Abstract: An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.

公开(公告)号：US20200066966A1

公开(公告)日：2020-02-27

申请号：US16666238

申请日：2019-10-28

Applicant: Butterfly Network Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Jaime Scott Zahorian ,  Paul Francis Cristman ,  Keith G. Fife

IPC: H01L41/27 ,  H05K3/36 ,  H01L41/047 ,  B06B1/06 ,  B06B1/02

Abstract: An ultrasound-on-a-chip device has an ultrasonic transducer substrate with plurality of transducer cells, and an electrical substrate. For each transducer cell, one or more conductive bond connections are disposed between the ultrasonic transducer substrate and the electrical substrate. Examples of electrical substrates include CMOS chips, integrated circuits including analog circuits, interposers and printed circuit boards.