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    Method of separating semiconductor dies
    34.
    发明授权
    Method of separating semiconductor dies 有权
    分离半导体管芯的方法

    公开(公告)号：US07829440B2

    公开(公告)日：2010-11-09

    申请号：US11835289

    申请日：2007-08-07

    Applicant: Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Chen-Fu Chu ,  Trung Tri Doan

    Inventor： Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Chen-Fu Chu ,  Trung Tri Doan

    IPC: H01L21/301

    CPC classification number: H01L21/78 ,  H01L33/0079 ,  H01L33/0095

    Abstract: A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, a seed metal layer may be used to grow hard metal layers above it for handling. Metal may be plated above these metal layers everywhere except where a block of stop electroplating (EP) material exists. The stop EP material may be obliterated, and a barrier layer may be formed above the entire remaining structure. The substrate may be removed, and the individual dies may have any desired bonding pads and/or patterned circuitry added to the semiconductor surface. The remerged hard metal after laser cutting and heating should be strong enough for handling. Tape may be added to the wafer, and a breaker may be used to break the dies apart. The resulting structure may be flipped over, and the tape may be expanded to separate the individual dies.

    Abstract translation: 描述了在半导体制造期间分离多个管芯的方法。 在包含多个管芯的半导体晶片的上表面上，种子金属层可以用于在其上方生长硬金属层用于处理。 除了存在一块停止电镀（EP）材料之外，金属可以被覆盖在这些金属层之上。 停止EP材料可能被擦除，并且阻挡层可以形成在整个剩余结构之上。 可以去除衬底，并且各个管芯可以具有添加到半导体表面的任何期望的接合焊盘和/或图案化电路。 激光切割加热后的重金属硬度应足够强大。 可以将胶带加入到晶片中，并且可以使用断路器将模具分开。 可以将所得到的结构翻转，并且可以将带扩展以分离各个管芯。

    PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES
    36.
    发明申请
    PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES 审中-公开
    金属器件外延结构的保护

    公开(公告)号：US20080087875A1

    公开(公告)日：2008-04-17

    申请号：US11548642

    申请日：2006-10-11

    Applicant: Feng-Hsu Fan ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jui-Kang Yen

    Inventor： Feng-Hsu Fan ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jui-Kang Yen

    IPC: H01L29/06

    CPC classification number: H01L33/0079 ,  H01L33/405 ,  H01L33/44 ,  H01L33/64

    Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

    Abstract translation: 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。

    Using (LaNiO.sub.3) .sub.X (TiO.sup.2) .sub.1-X and (LaNiO.sub.3) .sub.X (Ta.sub.2 O.sub.5) .sub.1-X oxide absorption composites for attenuating phase shifting blanks and masks
    38.
    发明授权
    Using (LaNiO.sub.3) .sub.X (TiO.sup.2) .sub.1-X and (LaNiO.sub.3) .sub.X (Ta.sub.2 O.sub.5) .sub.1-X oxide absorption composites for attenuating phase shifting blanks and masks 失效
    使用（LaNiO3）X（TiO2）1-X和（LaNiO3）X（Ta2O5）1-X氧化物吸收复合材料衰减相移毛坯和掩模

    公开(公告)号：US5981109A

    公开(公告)日：1999-11-09

    申请号：US15242

    申请日：1998-01-29

    Applicant: Chih-Chiang Tu ,  Jon-Yiew Gan ,  Tai-Bor Wu ,  Chao-Chen Cheng

    Inventor： Chih-Chiang Tu ,  Jon-Yiew Gan ,  Tai-Bor Wu ,  Chao-Chen Cheng

    IPC: G06F1/20 ,  G03F1/00 ,  G03F1/08 ,  G06F1/04 ,  H01L21/822 ,  H01L27/04 ,  G03F9/00

    CPC classification number: G03F1/32

    Abstract: An attenuating phase shifting photomask is formed using attenuating phase shifting composite material combining the optical properties of a first material having a high extinction coefficient and a second material having a high index of refraction. The first material is LaNiO.sub.3 and the second material is either TiO.sub.2 or Ta.sub.2 O.sub.5. The first and second materials are combined to produce composites of either (LaNiO.sub.3).sub.x (TiO.sub.2).sub.1-x or (LaNiO.sub.3).sub.x (Ta.sub.2 O.sub.5).sub.1-x to form attenuating phase shifting blanks and masks. Co-deposition of LaNiO.sub.3 and either TiO.sub.2 or Ta.sub.2 O.sub.5 uses rf-magnetron sputtering to form the (LaNiO.sub.3).sub.x (TiO.sub.2).sub.1-x or (LaNiO.sub.3).sub.x (Ta.sub.2 O.sub.5).sub.1-x films on a transparent quartz substrate.

    Abstract translation: 使用组合具有高消光系数的第一材料和具有高折射率的第二材料的光学特性的衰减相移复合材料形成衰减相移光掩模。 第一种材料是LaNiO3，第二种材料是TiO 2或Ta 2 O 5。 将第一和第二材料组合以产生（LaNiO 3）x（TiO 2）1-x或（LaNiO 3）x（Ta 2 O 5）1-x的复合材料，以形成衰减相变坯料和掩模。 LaNiO 3和TiO 2或Ta 2 O 5的共沉积使用射频磁控溅射在透明石英衬底上形成（LaNiO 3）x（TiO 2）1-x或（LaNiO 3）x（Ta 2 O 5）1-x膜。

    Using (LaNiO.sub.3).sub.X (TiO.sub.2).sub.1-x oxide absorption composite for attenuating phase shifting blanks and masks
    39.
    发明授权
    Using (LaNiO.sub.3).sub.X (TiO.sub.2).sub.1-x oxide absorption composite for attenuating phase shifting blanks and masks 失效
    使用（LaNiO3）X（TiO2）1-x氧化物吸收复合材料来衰减相移毛坯和掩模

    公开(公告)号：US5714285A

    公开(公告)日：1998-02-03

    申请号：US682475

    申请日：1996-07-17

    Applicant: Chih-Chiang Tu ,  Jon-Yiew Gan ,  Tai-Bor Wu ,  Chao-Chen Cheng

    Inventor： Chih-Chiang Tu ,  Jon-Yiew Gan ,  Tai-Bor Wu ,  Chao-Chen Cheng

    IPC: G06F1/20 ,  G03F1/00 ,  G03F1/32 ,  G06F1/04 ,  H01L21/822 ,  H01L27/04 ,  G03F9/00

    CPC classification number: G03F1/32

    Abstract: An attenuating phase shifting photomask is formed using attenuating phase shifting composite material combining the optical properties of a first material having a high extinction coefficient and a second material having a high index of refraction. The first material is LaNiO.sub.3 and the second material is TiO.sub.2. The first and second materials are combined as a composite of (LaNiO.sub.3).sub.x (TiO.sub.2).sub.1-x to form attenuating phase shifting blanks and masks. Co-deposition of LaNiO.sub.3 and TiO.sub.2 using rf magnetron sputtering is used to form the (LaNiO.sub.3).sub.x (TiO.sub.2).sub.1-x film on a transparent quartz substrate.

    Abstract translation: 使用组合具有高消光系数的第一材料和具有高折射率的第二材料的光学特性的衰减相移复合材料形成衰减相移光掩模。 第一种材料是LaNiO3，第二种材料是TiO2。 将第一和第二材料作为（LaNiO 3）x（TiO 2）1-x的复合物组合以形成衰减相变坯料和掩模。 使用rf磁控溅射法共沉积LaNiO3和TiO2，在透明石英衬底上形成（LaNiO3）x（TiO2）1-x薄膜。

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