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31.发明授权公开(公告)号：US06210254B1
公开(公告)日：2001-04-03
申请号：US09496327
申请日：2000-02-02
IPC分类号： C09K314
摘要： An innovative method of manufacturing polishing pads using photo-curing polymers and photolithography. The photolithography enables the creation of useful surface patterns not possible with conventional machining techniques and enables the use of pad materials otherwise too soft to pattern by conventional machining techniques.
摘要翻译： 使用光固化聚合物和光刻法制造抛光垫的创新方法。 光刻使得能够利用常规的加工技术创建有用的表面图案，并且能够使用垫子材料，否则太软而不能通过常规的加工技术进行图案化。
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公开(公告)号：US09073172B2
公开(公告)日：2015-07-07
申请号：US13469527
申请日：2012-05-11
申请人： David B. James , Donna M. Alden , Andrew R. Wank
发明人： David B. James , Donna M. Alden , Andrew R. Wank
摘要： The invention provides a polishing pad useful for polishing at least one of semiconductor, magnetic and optical substrates. The polishing pad includes a polymeric matrix, the polymeric matrix having a polishing surface. In addition, polymeric microelements are distributed within the polymeric matrix and at the polishing surface of the polymeric matrix. The polymeric microelements have an outer surface and being fluid-filled for creating texture at the polishing surface. And alkaline-earth metal oxide-containing regions are distributed within each of the polymeric microelements and spaced to coat less than 50 percent of the outer surface of the polymeric microelements.
摘要翻译： 本发明提供了一种用于抛光半导体，磁性和光学衬底中的至少一种的抛光垫。 抛光垫包括聚合物基质，聚合物基质具有抛光表面。 此外，聚合物微量元素分布在聚合物基质内和聚合物基体的抛光表面。 聚合物微元件具有外表面并被流体填充以在抛光表面上产生纹理。 并且含碱土金属氧化物的区域分布在每个聚合物微量元件内并间隔开以涂覆低于聚合物微量元素外表面的50％。
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公开(公告)号：US20130084702A1
公开(公告)日：2013-04-04
申请号：US13248123
申请日：2011-09-29
申请人： Jia Xie , David B. James , Chau H. Duong
发明人： Jia Xie , David B. James , Chau H. Duong
IPC分类号： H01L21/306 , H01L21/304 , B24D3/28 , B24D11/00 , B24D18/00
CPC分类号： C09G1/16 , B24B37/24 , C08G18/4825 , C08G18/4854 , C08G18/7621 , C08G18/10 , C08G18/324 , C08G18/672 , C08G18/48
摘要： A chemical mechanical polishing pad comprising an acrylate polyurethane polishing layer, wherein the polishing layer exhibits a tensile modulus of 65 to 500 MPa; an elongation to break of 50 to 250%; a storage modulus, G′, of 25 to 200 MPa; a Shore D hardness of 25 to 75; and a wet cut rate of 1 to 10 μm/min.
摘要翻译： 1.一种化学机械抛光垫，包括丙烯酸酯聚氨酯抛光层，其中所述抛光层的拉伸模量为65至500MPa; 断裂伸长率在50〜250％之间; 储能模量G'为25〜200MPa; 肖氏D硬度为25〜75; 湿切割速度为1〜10μm/ min。
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公开(公告)号：US08408977B2
公开(公告)日：2013-04-02
申请号：US13422180
申请日：2012-03-16
IPC分类号： B24D11/00
CPC分类号： B24B37/24 , C08G18/4252 , C08G18/664 , Y10T428/249953 , Y10T428/249979
摘要： The polishing pad is useful for polishing at least one of magnetic, optical and semiconductor substrates. A porous polishing layer includes a dual porosity structure within a polyurethane matrix. The dual porosity structure has a primary set of pores having pore walls with a thickness of 15 to 55 μm and a storage modulus of 10 to 60 MPa measured at 25° C. In addition, pore walls contain a secondary set of pores having an average pore size of 5 to 30 μm. The porous polishing layer is either fixed to a polymeric film or sheet substrate or formed into a woven or non-woven structure to form the polishing pad.
摘要翻译： 抛光垫可用于抛光磁性，光学和半导体衬底中的至少一种。 多孔抛光层包括聚氨酯基质内的双孔隙结构。 双孔隙结构具有初级孔隙，其具有厚度为15至55μm的孔壁和在25℃下测量的10至60MPa的储能模量。此外，孔壁包含具有平均值的第二组孔 孔径为5〜30μm。 将多孔抛光层固定到聚合物膜或片状基底上，或者形成织造或非织造结构以形成抛光垫。
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公开(公告)号：US20110076928A1
公开(公告)日：2011-03-31
申请号：US12586859
申请日：2009-09-28
CPC分类号： B24B37/24 , C08G18/4252 , C08G18/664 , Y10T428/249953 , Y10T428/249979
摘要： The polishing pad is useful for polishing at least one of magnetic, optical and semiconductor substrates. A porous polishing layer includes a dual porosity structure within a polyurethane matrix. The dual porosity structure has a primary set of pores having pore walls with a thickness of 15 to 55 μm and a storage modulus of 10 to 60 MPa measured at 25° C. In addition, pore walls contain a secondary set of pores having an average pore size of 5 to 30 μm. The porous polishing layer is either fixed to a polymeric film or sheet substrate or formed into a woven or non-woven structure to form the polishing pad.
摘要翻译： 抛光垫可用于抛光磁性，光学和半导体衬底中的至少一种。 多孔抛光层包括聚氨酯基质内的双孔隙结构。 双孔隙结构具有初级孔隙，其具有厚度为15至55μm的孔壁和在25℃下测量的10至60MPa的储能模量。此外，孔壁包含具有平均值的第二组孔 孔径为5〜30μm。 将多孔抛光层固定到聚合物膜或片状基底上，或者形成织造或非织造结构以形成抛光垫。
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公开(公告)号：US07074115B2
公开(公告)日：2006-07-11
申请号：US10937914
申请日：2004-09-10
申请人： David B. James , Mary Jo Kulp
发明人： David B. James , Mary Jo Kulp
IPC分类号： B24B1/00
CPC分类号： B24B37/24 , B24D3/26 , C08G18/10 , C08G18/4854 , C08G18/3808
摘要： A polishing pad is useful planarizing semiconductor substrates. The polishing pad comprises a polymeric material having a porosity of at least 0.1 volume percent, a KEL energy loss factor at 40° C. and 1 rad/sec of 385 to 750 1/Pa and a modulus E′ at 40° C. and 1 rad/sec of 100 to 400 MPa.
摘要翻译： 抛光垫是有用的平面化半导体衬底。 抛光垫包括具有至少0.1体积％的孔隙率，40℃下的KEL能量损耗系数和385-7501 / Pa的1弧度/秒和40℃的模量E'的聚合材料，以及 1rad / sec为100〜400MPa。
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公开(公告)号：US06869350B2
公开(公告)日：2005-03-22
申请号：US10659889
申请日：2003-09-11
CPC分类号： B24D3/28 , B24B37/26 , B24B41/047 , B24D3/26
摘要： This invention describes improved polishing pads useful in the manufacture of semiconductor devices or the like. The pads of the present invention have an advantageous hydrophilic polishing material and have an innovative surface topography and texture which generally improves predictability and polishing performance.
摘要翻译： 本发明描述了可用于制造半导体器件等的改进的抛光垫。 本发明的垫具有有利的亲水性抛光材料，并且具有创新的表面形貌和纹理，其通常改善了可预测性和抛光性能。
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公开(公告)号：US06860802B1
公开(公告)日：2005-03-01
申请号：US09608537
申请日：2000-06-30
CPC分类号： B24B37/26 , B24B37/042 , B24D3/28
摘要： An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad exhibits a stable morphology that can be reproduced easily and consistently. The pad surface resists glazing, thereby requiring less frequent and less aggressive conditioning. The benefits of such a polishing pad are low dishing of metal features, low oxide erosion, reduced pad conditioning, longer pad life, high metal removal rates, good planarization, and lower defectivity (scratches and Light Point Defects).
摘要翻译： 用于在半导体晶片上抛光金属镶嵌结构的改进的焊盘和工艺。 该方法包括以下步骤：将聚合物片材的表面压在聚合物片材的表面上，并与含有亚微米级颗粒的含水基液体组合，并提供在压力下使晶片和抛光垫片相对运动的装置， 接触导致平面去除所述晶片的表面，其中抛光垫在去除所述负载时具有低的弹性恢复，使得片材的机械响应大大无弹性。 改进的焊盘的特征在于具有高的能量耗散以及高焊盘刚度。 该垫具有稳定的形态，可以容易且一致地再现。 垫表面抵抗玻璃窗，从而需要较少的频繁和较不积极的调理。 这种抛光垫的优点是金属特征的低凹陷，低氧化物侵蚀，减少的焊盘调节，更长的焊盘寿命，高金属去除速率，良好的平坦化和较低的缺陷（划痕和光点缺陷）。
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公开(公告)号：US06682402B1
公开(公告)日：2004-01-27
申请号：US09711008
申请日：2000-11-10
IPC分类号： B24B100
CPC分类号： B24D3/28 , B24B37/26 , B24B41/047 , B24D3/26
摘要： This invention describes improved polishing pads useful in the manufacture of semiconductor devices or the like. The pads of the present invention have an advantageous hydrofoil polishing material and have an innovative surface topography and texture which generally improves predictability and polishing performance.
摘要翻译： 本发明描述了可用于制造半导体器件等的改进的抛光垫。 本发明的垫具有有利的水翼抛光材料，并且具有创新的表面形貌和纹理，其通常改善了可预测性和抛光性能。
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公开(公告)号：US06582283B2
公开(公告)日：2003-06-24
申请号：US10193429
申请日：2002-07-11
IPC分类号： B24B100
CPC分类号： B24B37/26 , B24B37/042 , B24D3/28
摘要： An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad exhibits a stable morphology that can be reproduced easily and consistently. The pad surface resists glazing, thereby requiring less frequent and less aggressive conditioning. The benefits of such a polishing pad are low dishing of metal features, low oxide erosion, reduced pad conditioning, longer pad life, high metal removal rates, good planarization, and lower defectivity (scratches and Light Point Defects).
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