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    Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
    33.
    发明申请
    Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom 有权
    用于形成半导体和/或含硅膜的组合物和方法，以及由其形成的结构

    公开(公告)号：US20050008880A1

    公开(公告)日：2005-01-13

    申请号：US10616147

    申请日：2003-07-08

    申请人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    发明人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    IPC分类号： B32B9/04 ,  B32B13/04 ,  C09D11/00 ,  H01L21/20 ,  H01L21/208 ,  H01L21/336 ,  H01L21/44

    CPC分类号： C23C18/14 ,  C09D11/52 ,  C23C18/1204 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/127 ,  C23C18/1275 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02636 ,  H01L29/66757 ,  Y10T428/24802 ,  Y10T428/24926 ,  Y10T428/31663

    摘要： Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

    摘要翻译： 用于形成图案化含硅膜的组合物，油墨和方法以及包括这种膜的图案化结构。 组合物通常包括（a）钝化的半导体纳米颗粒和（b）其中环状物质主要含有Si和/或Ge原子的第一和第二环状IVA族化合物。 油墨通常包括组合物和其中组合物可溶的溶剂。 该方法通常包括以下步骤：（1）在基材上印刷组合物或油墨以形成图案，和（2）固化图案化的组合物或油墨。 在替代实施方案中，该方法包括以下步骤：（i）固化半导体纳米颗粒组合物或至少一种环状IVA族化合物以形成薄膜，（ii）将薄膜与另一种膜相涂，和（iii）固化 涂覆的薄膜形成半导体薄膜。 半导体薄膜包括在氢化，至少部分非晶硅和/或锗中的半导体纳米颗粒的烧结混合物。 相对于通过相同方法制造的其它相同结构，但不含半导体纳米颗粒或氢化IVA族元素聚合物，该薄膜表现出改进的导电性，密度，粘附性和/或载流子迁移率。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时能够在数秒或数分钟而不是几小时或几天内形成这种薄膜的高通量印刷工艺， 与传统的光刻工艺。

    Polysilane compositions, methods for their synthesis and films formed therefrom
    34.
    发明授权
    Polysilane compositions, methods for their synthesis and films formed therefrom 有权
    聚硅烷组合物，其合成方法和由其形成的薄膜

    公开(公告)号：US08455604B1

    公开(公告)日：2013-06-04

    申请号：US13543557

    申请日：2012-07-06

    申请人： Wenzhuo Guo ,  Vladimir K. Dioumaev ,  Joerg Rockenberger ,  Brent Ridley

    发明人： Wenzhuo Guo ,  Vladimir K. Dioumaev ,  Joerg Rockenberger ,  Brent Ridley

    IPC分类号： C08G77/00 ,  C07F7/02 ,  C07F7/21

    CPC分类号： C07F7/0896 ,  C08G77/60 ,  C08L83/16

    摘要： Polysilanes, inks containing the same, and methods for their preparation are disclosed. The polysilane may have the formula H-[(AHR)n(c-AmHpm-2)q]—H, where A is independently Si or Ge; R is H, -AaHa+1Ra, halogen, aryl or substituted aryl; (n+a)≧10 if q=0, q≧3 if n=0, and (n+q)≧6 if both n and q≠0; p is 1 or 2; and m is from 3 to 12. The method may include combining a silane compound of the formula AHaR14-a, AkHgR1′h and/or c-AmHpmR1rm with a catalyst of the formula R4xR5yMXz (or an immobilized derivative thereof) to form a poly(aryl)silane; then washing the poly(aryl)silane with an aqueous washing composition and contacting the poly(aryl)silane with an adsorbent to remove the metal M. Alternatively, the method may include halogenating a polyarylsilane and reducing the halopolysilane with a metal hydride to form the polysilane.

    摘要翻译： 公开了聚硅烷，含有它们的油墨及其制备方法。 聚硅烷可以具有式H - [（AHR）n（c-AmHpm-2）q] -H，其中A独立地为Si或Ge; R是H，-AaHa + 1Ra，卤素，芳基或取代的芳基; （n + a）> = 10，如果n = 0，则q> = 3，如果n和q <0，则（n + q）> = 6。 p为1或2; 该方法可以包括将式AHaR14-a，AkHgR1'h和/或c-AmHpmR1rm的硅烷化合物与式R4xR5yMXz的催化剂（或其固定化的衍生物）组合以形成聚 （芳基）硅烷; 然后用水性洗涤组合物洗涤聚（芳基）硅烷并将聚芳基硅烷与吸附剂接触以除去金属M.或者，该方法可以包括用聚合芳基硅烷卤化并用金属氢化物还原卤代聚硅烷以形成 聚硅烷。

    Silane compositions, methods of making the same, method for forming a semiconducting and/or silicon-containing film, and thin film structures formed therefrom
    35.
    发明授权
    Silane compositions, methods of making the same, method for forming a semiconducting and/or silicon-containing film, and thin film structures formed therefrom 有权
    硅烷组合物，其制备方法，形成半导体和/或含硅膜的方法以及从其形成的薄膜结构

    公开(公告)号：US08367031B1

    公开(公告)日：2013-02-05

    申请号：US13349838

    申请日：2012-01-13

    申请人： Klaus Kunze ,  Wenzhuo Guo ,  Fabio Zurcher ,  Mao Takashima ,  Laila Francisco ,  Joerg Rockenberger ,  Brent Ridley

    发明人： Klaus Kunze ,  Wenzhuo Guo ,  Fabio Zurcher ,  Mao Takashima ,  Laila Francisco ,  Joerg Rockenberger ,  Brent Ridley

    IPC分类号： C01B31/36

    CPC分类号： C01B6/00 ,  C01B6/003 ,  C01B6/34

    摘要： A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

    摘要翻译： 制备具有还原的金属基杂质的氢化IVA族化合物的方法，包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。 根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性，膜形态和/或载流子迁移率。 此外，本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的（环）硅烷生产的薄膜的性能更可预测。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺， 与传统的光刻工艺。

    Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
    36.
    发明授权
    Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom 有权
    用于形成半导体和/或含硅膜的组合物和方法，以及由其形成的结构

    公开(公告)号：US07553545B2

    公开(公告)日：2009-06-30

    申请号：US11373696

    申请日：2006-03-10

    申请人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    发明人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    IPC分类号： B32B9/04 ,  B32B13/04 ,  H01L21/00 ,  H01L21/20 ,  H01L21/84

    CPC分类号： C23C18/14 ,  C09D11/52 ,  C23C18/1204 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/127 ,  C23C18/1275 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02636 ,  H01L29/66757 ,  Y10T428/24802 ,  Y10T428/24926 ,  Y10T428/31663

    摘要： Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

    摘要翻译： 用于形成图案化含硅膜的组合物，油墨和方法以及包括这种膜的图案化结构。 组合物通常包括（a）钝化的半导体纳米颗粒和（b）其中环状物质主要含有Si和/或Ge原子的第一和第二环状IVA族化合物。 油墨通常包括组合物和其中组合物可溶的溶剂。 该方法通常包括以下步骤：（1）在基材上印刷组合物或油墨以形成图案，和（2）固化图案化的组合物或油墨。 在替代实施方案中，该方法包括以下步骤：（i）固化半导体纳米颗粒组合物或至少一种环状IVA族化合物以形成薄膜，（ii）将薄膜与另一种膜相涂，和（iii）固化 涂覆的薄膜形成半导体薄膜。 半导体薄膜包括在氢化，至少部分非晶硅和/或锗中的半导体纳米颗粒的烧结混合物。 相对于通过相同方法制造的其它相同结构，但不含半导体纳米颗粒或氢化IVA族元素聚合物，该薄膜表现出改进的导电性，密度，粘附性和/或载流子迁移率。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时能够在数秒或数分钟而不是几小时或几天内形成这种薄膜的高通量印刷工艺， 与传统的光刻工艺。

    Polysilane compositions, methods for their synthesis and films formed therefrom
    37.
    发明授权
    Polysilane compositions, methods for their synthesis and films formed therefrom 有权

    公开(公告)号：US07491782B1

    公开(公告)日：2009-02-17

    申请号：US11893054

    申请日：2007-08-13

    申请人： Wenzhuo Guo ,  Vladimir K. Dioumaev ,  Joerg Rockenberger ,  Brent Ridley

    发明人： Wenzhuo Guo ,  Vladimir K. Dioumaev ,  Joerg Rockenberger ,  Brent Ridley

    IPC分类号： C08G77/00 ,  C08G77/04 ,  C08G77/12

    CPC分类号： C07F7/0896 ,  C08G77/60 ,  C08L83/16

    摘要： Polysilanes, inks containing the same, and methods for their preparation are disclosed. The polysilane generally has the formula H—[(AHR)n(c-AmHpm−2)q]—H, where each instance of A is independently Si or Ge; R is H, —AaHa+1Ra, halogen, aryl or substituted aryl; (n+a)≧10 if q=0, q≧3 if n=0, and (n+q)≧6 if both n and q≠0; p is 1 or 2; and m is from 3 to 12. In one aspect, the method generally includes the steps of combining a silane compound of the formula AHaR14−a, the formula AkHgR1′h and/or the formula c-AmHpmR1rm with a catalyst of the formula R4xR5yMXz (or an immobilized derivative thereof) to form a poly(aryl)silane; then washing the poly(aryl)silane with an aqueous washing composition and contacting the poly(aryl)silane with an adsorbent to remove the metal M. In another aspect, the method includes the steps of halogenating a polyarylsilane to form a halopolysilane; and reducing the halopolysilane with a metal hydride to form the polysilane. The synthesis of semiconductor inks via dehydrocoupling of silanes and/or germanes allows for tuning of the ink properties (e.g., viscosity, boiling point, and surface tension) and for deposition of silicon films or islands by spincoating, inkjetting, dropcasting, etc., with or without the use of UV irradiation.

    Methods of making metal silicide contacts, interconnects, and/or seed layers
    39.
    发明授权
    Methods of making metal silicide contacts, interconnects, and/or seed layers 有权
    制造金属硅化物接触，互连和/或种子层的方法

    公开(公告)号：US08158518B2

    公开(公告)日：2012-04-17

    申请号：US12175450

    申请日：2008-07-17

    申请人： Aditi Chandra ,  Arvind Kamath ,  James Montague Cleeves ,  Joerg Rockenberger ,  Mao Takashima ,  Erik Scher

    发明人： Aditi Chandra ,  Arvind Kamath ,  James Montague Cleeves ,  Joerg Rockenberger ,  Mao Takashima ,  Erik Scher

    IPC分类号： H01L21/44

    CPC分类号： H01L21/288 ,  H01L21/28518 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76838 ,  H01L21/76873 ,  H01L21/76895 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/458 ,  H01L29/78618 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. The method of forming contacts includes depositing an ink of a silicide-forming metal onto an exposed silicon surface, drying the ink to form a silicide-forming metal precursor, and heating the silicide-forming metal precursor and the silicon surface to form a metal silicide contact. Optionally, the metal precursor ink may be selectively deposited onto a dielectric layer adjacent to the exposed silicon surface to form a metal-containing interconnect. Furthermore, one or more bulk conductive metal(s) may be deposited on remaining metal precursor ink and/or the dielectric layer. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.

    摘要翻译： 公开了使用包含硅化物形成金属的油墨形成触点（和任选的局部互连）的方法，诸如二极管和/或包括这种触点的晶体管的电气器件，（可选的）局部互连）以及用于形成这种器件的方法。 形成接触的方法包括将硅化物形成金属的油墨沉积到暴露的硅表面上，干燥油墨以形成形成硅化物的金属前体，以及加热形成硅化物的金属前体和硅表面以形成金属硅化物 联系。 任选地，可以将金属前体油墨选择性地沉积到与暴露的硅表面相邻的电介质层上，以形成含金属互连。 此外，一个或多个体导电金属可以沉积在剩余的金属前体油墨和/或介电层上。 可以使用这种印刷的接触和/或局部互连来制造电子器件，例如二极管和晶体管。 金属墨水可以同时印刷以用于接触以及局部互连，或者替代地，如果需要用于接触和互连线的不同金属，印刷金属可以用作其它金属的无电沉积的种子 。 这种方法有利地减少了处理步骤的数量，并且不一定需要任何蚀刻。