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    DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    35.
    发明申请
    DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    显示基板及其制造方法

    公开(公告)号：US20070164330A1

    公开(公告)日：2007-07-19

    申请号：US11566886

    申请日：2006-12-05

    申请人： Chang-Oh Jeong ,  Hong-Sick Park ,  Shi-Yul Kim ,  Sang-Gab Kim

    发明人： Chang-Oh Jeong ,  Hong-Sick Park ,  Shi-Yul Kim ,  Sang-Gab Kim

    IPC分类号： H01L31/113

    CPC分类号： G02F1/136286 ,  G02F2001/133397 ,  G02F2001/13629 ,  G02F2201/501 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/42384

    摘要： A display substrate includes a base substrate, a first metal pattern, a gate insulating layer, a second metal pattern, a channel layer and a pixel electrode. The first metal pattern is formed on the base substrate, and includes a gate line and a gate electrode of a switching element. The gate insulating layer is formed on the base substrate including the first metal pattern. The second metal pattern is formed on the gate insulating layer, and includes a source electrode, a drain electrode and a source line. The channel layer is formed under the second metal pattern, and is patterned to have substantially the same side surface as a side surface of the second metal pattern. The pixel electrode is electrically connected to the drain electrode. Therefore, an afterimage on a display panel, thus improving display quality.

    摘要翻译： 显示基板包括基底基板，第一金属图案，栅极绝缘层，第二金属图案，沟道层和像素电极。 第一金属图案形成在基底基板上，并且包括开关元件的栅极线和栅电极。 栅极绝缘层形成在包括第一金属图案的基底基板上。 第二金属图案形成在栅极绝缘层上，并且包括源电极，漏电极和源极线。 沟道层形成在第二金属图案之下，并且被图案化以具有与第二金属图案的侧表面基本相同的侧表面。 像素电极电连接到漏电极。 因此，在显示面板上留下余像，从而提高显示质量。

    Thin film transistor array panel and method of manufacturing the same
    39.
    发明申请
    Thin film transistor array panel and method of manufacturing the same 审中-公开
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号：US20070111412A1

    公开(公告)日：2007-05-17

    申请号：US11600481

    申请日：2006-11-15

    申请人： Min-Seok Oh ,  Jeong-Min Park ,  Sang-Gab Kim ,  Hong-Kee Chin ,  Chang-Oh Jeong ,  Hong-Sick Park ,  Shi-Yul Kim

    发明人： Min-Seok Oh ,  Jeong-Min Park ,  Sang-Gab Kim ,  Hong-Kee Chin ,  Chang-Oh Jeong ,  Hong-Sick Park ,  Shi-Yul Kim

    IPC分类号： H01L21/84

    CPC分类号： H01L21/32139 ,  H01L21/0273 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288

    摘要： In one embodiment, a thin film transistor array display panel and method of manufacturing the same are provided. A method includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact layer on the gate line; forming a data layer on the ohmic contact layer; forming a photosensitive pattern on the data layer; etching the data layer to form a data line including a source electrode and a drain electrode that is opposite to the source electrode; reflowing the photosensitive pattern to cover side surfaces of the source electrode and the drain electrode; and etching the ohmic contact layer using the reflowed photosensitive pattern as a mask.

    摘要翻译： 在一个实施例中，提供了薄膜晶体管阵列显示面板及其制造方法。 一种方法包括在基板上形成栅极线; 在栅极线上形成栅极绝缘层，半导体层和欧姆接触层; 在欧姆接触层上形成数据层; 在数据层上形成感光图案; 蚀刻数据层以形成包括与源电极相对的源电极和漏电极的数据线; 回流感光图案以覆盖源电极和漏电极的侧表面; 并使用回流感光图案作为掩模蚀刻欧姆接触层。

    Thin film transistor array panel and manufacturing method thereof
    40.
    发明授权
    Thin film transistor array panel and manufacturing method thereof 失效
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号：US08455277B2

    公开(公告)日：2013-06-04

    申请号：US13523767

    申请日：2012-06-14

    申请人： Je-Hun Lee ,  Sung-Jin Kim ,  Hee-Joon Kim ,  Chang-Oh Jeong

    发明人： Je-Hun Lee ,  Sung-Jin Kim ,  Hee-Joon Kim ,  Chang-Oh Jeong

    IPC分类号： H01L21/84

    CPC分类号： G02F1/13439 ,  G02F1/13458 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908

    摘要： A thin film transistor array panel is provided, which includes a plurality of gate lines, a plurality of common electrodes, a gate insulating layer covering the gate lines and the common electrodes, a plurality of semiconductor layers formed on the gate insulating layer, a plurality of data lines including a plurality of source electrodes and formed on the semiconductor layer, a plurality of drain electrodes formed on the semiconductor layer, and a plurality of pixel electrodes overlapping the common electrodes and connected to the drain electrodes. Because the common electrodes are made of ITON, IZON, or a-ITON, or a double layer of ITO/ITON, IZO/IZON, or a-a-ITO/a-ITON, when H2 or SiH4 are injected to form a silicon nitride (SiNX) layer on the common electrodes, the opaque metal Sn or Zn is not produced on the surfaces of the common electrode.

    摘要翻译： 提供薄膜晶体管阵列面板，其包括多个栅极线，多个公共电极，覆盖栅极线和公共电极的栅极绝缘层，形成在栅极绝缘层上的多个半导体层，多个 包括多个源电极并形成在半导体层上的数据线，形成在半导体层上的多个漏电极以及与公共电极重叠并连接到漏电极的多个像素电极。 由于公共电极由ITON，IZON或者-IONON制成，或者是将双重层的ITO / ITON，IZO / IZON或者a-ITO / a-ITON，当注入H 2或SiH 4以形成氮化硅时 SiNX）层，在公共电极的表面上不产生不透明金属Sn或Zn。