Tin chemical vapor deposition using TiCl4 and SiH4
    31.
    发明授权
    Tin chemical vapor deposition using TiCl4 and SiH4 失效
    锡化学气相沉积使用TiCl4和SiH4

    公开(公告)号:US4977106A

    公开(公告)日:1990-12-11

    申请号:US521057

    申请日:1990-05-01

    Inventor: Gregory C. Smith

    CPC classification number: H01L21/76841 Y10S438/909

    Abstract: A procedure in the formation of semiconductor devices for depositing TiN wherein silane and preferably SiH4 is substituted for the hydrogen in the prior art procedures to provide the approximate twofold to fivefold increase in TiN deposition rate at 400 degrees C. It is believed that the reason for the deposition rate increase is that there is a larger free energy change in the reaction which is believed to occur according to the equation: TiCl4+SiH4+NH3.fwdarw.TiN+SiCl4+(7/2)H2. The above described reaction provides cleaner films when performed in a cold wall CVD reactor than is provided by the prior art procedures as described above. Resistivity of 100 microohm-cm has been measured, this being typical of sputtered TiN films.

    Abstract translation: 形成用于沉积TiN的半导体器件的步骤,其中硅烷并且优选SiH 4代替现有技术中的氢,以提供在400℃下TiN沉积速率大约两倍至五倍的增加。据信, 沉积速率的增加是反应中存在较大的自由能变化,根据以下方程可以发生:TiCl 4 + SiH 4 + NH 3 - > TiN + SiCl 4 +(7/2)H 2。 当在冷壁CVD反应器中进行时,上述反应提供了比上述现有技术方法提供的更清洁的膜。 已经测量出100微欧姆 - 厘米的电阻率,这是典型的溅射TiN膜。

    Ornamented metallic mesh and method of making same
    33.
    发明授权
    Ornamented metallic mesh and method of making same 有权
    装饰金属网及其制作方法

    公开(公告)号:US08328073B1

    公开(公告)日:2012-12-11

    申请号:US12124296

    申请日:2008-05-21

    CPC classification number: A44C5/0061 A44C17/04

    Abstract: A mesh structure to which is mounted one or more ornamental stones. The mesh structure includes a series of chain links that are inter-woven. A thin metallic film in the form of a solder layer is hardened onto the surface of the mesh structure so as to make the mesh structure rigid. One or more settings are drilled into the rigid mesh structure, and a stone is disposed in each of the settings that are provided. A series of prongs are formed about the periphery of each of the so-disposed stones by up-setting the mesh.

    Abstract translation: 安装有一个或多个装饰石的网状结构。 网格结构包括一系列互连的链节。 焊接层形式的薄金属膜在网状结构的表面上硬化,以使网状结构刚性。 在刚性网格结构中钻一个或多个设置,并且在提供的每个设置中设置石头。 通过设置网格,围绕每个经过处置的石头的周边形成一系列尖头。

    Blade opening arrowhead
    36.
    发明申请
    Blade opening arrowhead 审中-公开
    刀片打开箭头

    公开(公告)号:US20090203477A1

    公开(公告)日:2009-08-13

    申请号:US12069729

    申请日:2008-02-12

    CPC classification number: F42B6/08

    Abstract: A blade opening arrowhead having an actuator moveably mounted with respect to a blade carrying body. The actuator can move each blade between a closed position and an opened position. During flight, the blade is in the closed position. Upon target penetration, for example, the actuator moves the blade into the opened position.

    Abstract translation: 具有可相对于刀片承载体可移动地安装的致动器的刀片打开箭头。 致动器可以在关闭位置和打开位置之间移动每个叶片。 在飞行中,叶片处于关闭位置。 在目标穿透时,例如,致动器将叶片移动到打开位置。

    Method for detecting acoustic emission using a microwave Doppler radar detector
    38.
    发明授权
    Method for detecting acoustic emission using a microwave Doppler radar detector 失效
    使用微波多普勒雷达探测器检测声发射的方法

    公开(公告)号:US07397421B2

    公开(公告)日:2008-07-08

    申请号:US11112569

    申请日:2005-04-22

    Inventor: Gregory C. Smith

    CPC classification number: G01S13/524 B23Q17/098 G01S13/88

    Abstract: Acoustic emissions are detected by reflecting microwave radar signals off of an object, receiving reflected radar signals, generating an intermediate frequency, and filtering the intermediate frequency to remove low frequency signals associated with object movement and not acoustic emissions. A microwave Doppler radar detector provides the signals, a band-pass filter filters the intermediate frequency signal, and resulting signal is collected and analyzed to establish a relationship between the acoustic emission and the filtered signal. One application described is detecting tool wear using a microwave Doppler-based acoustic emission sensor and predicting tool wear based on the detected acoustic emission.

    Abstract translation: 通过从对象反射微波雷达信号,接收反射的雷达信号,产生中频,并对中频进行滤波以去除与物体运动相关的低频信号而不是声发射来检测声发射。 微波多普勒雷达检测器提供信号,带通滤波器对中频信号进行滤波,并收集和分析结果信号以建立声发射与滤波信号之间的关系。 所描述的一个应用是使用基于微波多普勒的声发射传感器来检测工具磨损,并且基于检测到的声发射预测工具磨损。

    Electrically activated archery component
    39.
    发明授权
    Electrically activated archery component 有权
    电激活射箭组件

    公开(公告)号:US07337773B2

    公开(公告)日:2008-03-04

    申请号:US11031980

    申请日:2005-01-06

    CPC classification number: F41B5/143 F41B5/1426

    Abstract: An archery component mountable with respect to an archery bow. The archery component includes a sensor that senses a movement of an archery arrow with respect to the archery bow and/or a movement of the archery bow. The sensor transmits a signal, upon sensing at least one movement, to a signal processor housed within a body of the archery bow and in communication with the sensor. The signal processor receives the signal and activates the archery component in response to the received signal.

    Abstract translation: 相对于射箭弓安装的射箭部件。 射箭部件包括感测射箭箭头相对于射箭弓的运动和/或射箭弓的运动的传感器。 传感器将感测至少一个移动的信号传送到容纳在射箭弓的身体内并与传感器通信的信号处理器。 信号处理器接收信号并响应于接收到的信号激活射箭分量。

    Structure and method of forming an enlarged head on a plug to eliminate the enclosure requirement
    40.
    发明授权
    Structure and method of forming an enlarged head on a plug to eliminate the enclosure requirement 失效
    在塞子上形成放大头部以消除外壳要求的结构和方法

    公开(公告)号:US07301238B2

    公开(公告)日:2007-11-27

    申请号:US10897222

    申请日:2004-07-22

    Inventor: Gregory C. Smith

    Abstract: The contact opening through an insulating layer is formed having a straight sidewall portion and a bowl shaped sidewall portion. The bowl shaped sidewall portion is near the top of the insulation layer to provide an enlarged diameter of the contact opening at the top relative to the bottom. A conductive material is then formed in the contact opening in electrical contact with a lower conductive layer. The conductive material forms a plug having an enlarged head, such as a nail head or a flat heat screw shape. The enlarged head protects the silicon and a barrier layer, if present, within the contact from being etched by any subsequent anisotropic etches. Thus, when an electrical interconnection layer such as aluminum is formed overlying the contact plug, the plug acts as an etch stop to prevent etching of a barrier layer of the barrier layer within the contact opening.

    Abstract translation: 通过绝缘层的接触开口形成为具有直的侧壁部分和碗形的侧壁部分。 碗状侧壁部分靠近绝缘层的顶部,以在顶部相对于底部提供接触开口的扩大直径。 然后在接触开口中形成与下导电层电接触的导电材料。 导电材料形成具有扩大的头部的塞子,例如钉头或平的热螺丝形状。 扩大的头部保护硅和阻挡层(如果存在)在接触件内被任何随后的各向异性蚀刻腐蚀。 因此,当诸如铝的电互连层形成在接触插塞上方时,插塞充当蚀刻停止件,以防止在接触开口内蚀刻阻挡层的阻挡层。

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