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公开(公告)号:US20210405499A1
公开(公告)日:2021-12-30
申请号:US16946653
申请日:2020-06-30
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Sudharsanan Srinivasan , Di Liang , Geza Kurczveil , Raymond G. Beausoleil
Abstract: Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including an optical transmitter configured to transmit optical signals. The optical transmitter includes a first optical source coupled to an input waveguide and configured to emit light having different wavelengths through the input waveguide. The optical transmitter includes a Mach-Zehnder interferometer that includes a first arm and a second arm. The MZI further includes a first optical coupler configured to couple the emitted light from the input waveguide to the first and second arms and an array of two or more second optical sources coupled to the first arm. Each of the two or more second optical sources are configured to be injection locked to a different respective wavelength of the emitted light transmitted from the first optical source. The MZI further includes a second optical coupler configured to combine the emitted light from the first and second arms after propagating therethrough.
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公开(公告)号:US10804678B2
公开(公告)日:2020-10-13
申请号:US16132070
申请日:2018-09-14
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Di Liang , Geza Kurczveil , Raymond G. Beausoleil , Marco Fiorentino
IPC: H01S5/343 , H01S5/32 , H01S5/347 , H01S3/23 , H01S3/063 , H01S5/34 , H01S5/02 , H01S5/042 , H01S5/026 , H01S5/10
Abstract: An example method of manufacturing a semiconductor device. A first wafer may be provided that includes a first layer that contains quantum dots. A second wafer may be provided that includes a buried dielectric layer and a second layer on the buried dielectric layer. An interface layer may be formed on at least one of the first layer and the second layer, where the interface layer may be an insulator, a transparent electrical conductor, or a polymer. The first wafer may be bonded to the second wafer by way of the interface layer.
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公开(公告)号:US20200271864A1
公开(公告)日:2020-08-27
申请号:US15929675
申请日:2020-05-15
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Raymond G. Beausoleil , Di Liang , Marco Fiorentino , Geza Kurczveil , Mir Ashkan Seyedi , Zhihong Huang
Abstract: An example system for multi-wavelength optical signal splitting is disclosed. The example disclosed herein comprises a first splitter, a second splitter, and a modulator. The system receives a multi-wavelength optical signal and an electrical signal, wherein the multi-wavelength optical signal comprises a plurality of optical wavelengths and has a power level. The first splitter is to split the plurality of optical wavelengths into a plurality of optical wavelength groups. The second splitter is to split the multi-wavelength optical signal or the plurality of optical wavelength groups into a plurality of lower power signal groups. The modulator is to encode the electrical signal into the plurality of optical wavelength groups, the plurality of lower power signal groups, or a combination thereof.
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公开(公告)号:US10656337B2
公开(公告)日:2020-05-19
申请号:US15718306
申请日:2017-09-28
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Raymond G. Beausoleil , Di Liang , Marco Fiorentino , Geza Kurczveil , Mir Ashkan Seyedi , Zhihong Huang
Abstract: An example system for multi-wavelength optical signal splitting is disclosed. The example disclosed herein comprises a first splitter, a second splitter, and a modulator. The system receives a multi-wavelength optical signal and an electrical signal, wherein the multi-wavelength optical signal comprises a plurality of optical wavelengths and has a power level. The first splitter is to split the plurality of optical wavelengths into a plurality of optical wavelength groups. The second splitter is to split the multi-wavelength optical signal or the plurality of optical wavelength groups into a plurality of lower power signal groups. The modulator is to encode the electrical signal into the plurality of optical wavelength groups, the plurality of lower power signal groups, or a combination thereof.
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公开(公告)号:US10566765B2
公开(公告)日:2020-02-18
申请号:US15335909
申请日:2016-10-27
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Geza Kurczveil , Di Liang , Raymond G. Beausoleil
IPC: H01S5/00 , H01S5/10 , H01S5/34 , H01S5/065 , H01S5/06 , H01S5/22 , H01S5/02 , H01S5/068 , H01S5/50
Abstract: Examples disclosed herein relate to multi-wavelength semiconductor lasers. In some examples disclosed herein, a multi-wavelength semiconductor laser may include a silicon-on-insulator (SOI) substrate and a quantum dot (QD) layer above the SOI substrate. The QD layer may include and active gain region and may have at least one angled junction at one end of the QD layer. The SOI substrate may include a waveguide in an upper silicon layer and a mode converter to facilitate optical coupling of a lasing mode to the waveguide.
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公开(公告)号:US20200026011A1
公开(公告)日:2020-01-23
申请号:US16587873
申请日:2019-09-30
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Mir Ashkan Seyedi , Marco Fiorentino , Geza Kurczveil , Raymond G. Raymond
Abstract: A photonic integrated circuit package includes two arrays or sets of integrated comb laser modules that are bonded to a silicon interposer. Each comb laser of an array has a common or overlapping spectral range, with each laser in the array being optically coupled to a local optical bus. The effective spectral range of the lasers in each array are different, or distinct, as to each array. An optical coupler is disposed within the silicon interposer and is optically coupled to each of the local optical buses. An ASIC (application specific integrated circuit) is bonded to the silicon interposer and provides control and operation of the comb laser modules.
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公开(公告)号:US10459133B1
公开(公告)日:2019-10-29
申请号:US15963570
申请日:2018-04-26
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Di Liang , Geza Kurczveil , Raymond G. Beausoleil
Abstract: A hybrid grating comprises a first grating layer composed of a first solid-state material, and a second grating layer over the first grating layer and composed of a second solid-state material, the second solid state-material being different than the first solid-state material and having a monocrystalline structure.
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公开(公告)号:US10429601B1
公开(公告)日:2019-10-01
申请号:US15953765
申请日:2018-04-16
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Mir Ashkan Seyedi , Marco Fiorentino , Geza Kurczveil , Raymond G. Beausoleil
Abstract: A photonic integrated circuit package includes two arrays or sets of integrated comb laser modules that are bonded to a silicon interposer. Each comb laser of an array has a common or overlapping spectral range, with each laser in the array being optically coupled to a local optical bus. The effective spectral range of the lasers in each array are different, or distinct, as to each array. An optical coupler is disposed within the silicon interposer and is optically coupled to each of the local optical buses. An ASIC (application specific integrated circuit) is bonded to the silicon interposer and provides control and operation of the comb laser modules.
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公开(公告)号:US20190103719A1
公开(公告)日:2019-04-04
申请号:US15720493
申请日:2017-09-29
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Geza Kurczveil , Raymond G. Beausoleil , Di Liang , Chong Zhang , David Kielpinski
CPC classification number: H01S3/0057 , G02B6/10 , H01S3/083 , H01S3/10007 , H01S3/1118 , H01S5/005 , H01S5/0085 , H01S5/021 , H01S5/0265 , H01S5/0601 , H01S5/0657 , H01S5/1092 , H01S5/1221 , H01S5/141
Abstract: A laser includes a traveling wave laser cavity with an active section, a pulse stretcher, and a pulse compressor. The pulse stretcher is coupled to the waveguide before the active section and the pulse compressor is coupled to the waveguide after the active section.
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公开(公告)号:US10078233B2
公开(公告)日:2018-09-18
申请号:US15328903
申请日:2014-07-30
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Di Liang , Geza Kurczveil , Marco Fiorentino , Raymond G. Beausoleil
CPC classification number: G02F1/025 , G02B6/29338 , G02B2006/12085 , G02B2006/12142 , G02F1/3133 , G02F2001/0152 , G02F2203/15
Abstract: An example device in accordance with an aspect of the present disclosure includes a first semiconductor layer disposed on a substrate, a dielectric layer disposed between the first semiconductor layer and a second semiconductor layer dissimilar from the first semiconductor layer. A capacitor is formed of at least a portion of the first semiconductor layer, the dielectric layer, and the second semiconductor layer, and is to be included in an optical waveguide resonator.
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