摘要:
An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to emit visible light in a wide range. The light emitting device includes a semiconductor laser diode that emits a laser beam; and a luminescent component that is provided while separated from the semiconductor laser diode and absorbs the laser beam to emit the visible light. In the light emitting device, the luminescent component includes an optical path through which the laser beam is incident to a center portion of the luminescent component.
摘要:
According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.
摘要翻译:根据一个实施例,半导体发光器件包括n型半导体层,p型半导体层,阱层,阻挡层,含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。 阱层,阻挡层,含Al层和中间层随后设置在n型半导体层和p型半导体层之间。 含Al层具有比阻挡层更大的带隙能量,比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。 中间层具有比阱层更大的带隙能量,并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。 第一部分的带隙能量小于第二部分的带隙能量。
摘要:
An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to emit visible light in a wide range. The light emitting device includes a semiconductor laser diode that emits a laser beam; and a luminescent component that is provided while separated from the semiconductor laser diode and absorbs the laser beam to emit the visible light. In the light emitting device, the luminescent component includes an optical path through which the laser beam is incident to a center portion of the luminescent component.
摘要:
The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion.
摘要:
According to one embodiment, an information processing apparatus includes an storage apparatus including a first storage and a second storage. The storage apparatus includes a first data management module which stores data which is required to be read in a the predetermined period in the second storage so that the data requested to be read in the predetermined period is distinguishable. The storage apparatus further includes a second data management module which performs replacement of the data in the second storage so that data should be stored in the second storage, in an order reverse to that in which the data is requested to be read, while retaining the data stored in the second storage by the first data management module.
摘要:
A semiconductor device includes a p-type nitride semiconductor layer (14); and a p-side electrode (18) including a palladium oxide film (30) connected to a surface of the nitride semiconductor layer (14).
摘要:
A semiconductor light emitting device, includes an active layer radiating a light having a predetermined wavelength; a first semiconductor layer of a first conductivity type, provided on the active layer. A semiconductor substrate has a first principal surface in contact with the active layer, a second principal surface facing the first principal surface, and side surfaces connected to the second principal surface. Each of the side surfaces has a bevel angle in a range from about 45 degrees to less than 90 degrees with respect to the second principal surface. A second semiconductor layer of a second conductivity type is provided under the active layer. A first electrode is provided under the second semiconductor layer. A distance between the active layer and the first electrode depends on the wavelength and a refractive index of the second semiconductor layer.
摘要:
An amplifier is provided with an amplifier circuit including a plurality of first transistors having gates thereof coupled in common, a bias circuit including a plurality of second transistors that are coupled and outputs a bias voltage to the gates of the plurality of first transistors, and a selection circuit simultaneously controlling a number of first transistors to be coupled to the amplifier circuit and a number of second transistors to be coupled to the bias circuit based on the bias voltage.
摘要:
A seat system, adapted for a motor vehicle, includes a portable device taken along with a user for sending at least identification information, an on-vehicle front seat, an on-vehicle actuator for actuating the front seat, a keyless control unit and a seat control unit. The keyless control unit communicates with the portable device to lock and unlock door locks when the identification information is authorized, and the seat control unit actuates the actuator to perform a walk-in function for changing a position state of the front seat for a passenger to easily get in a rear seat side compartment according to an operation of the portable device when the authorization is made.
摘要:
Provided is a magnetic recording medium exhibiting good electromagnetic characteristics in high-density recording The magnetic recording medium employed for magnetically recording signals with a track width equal to or less than 2.0 μm and reproducing the magnetically recorded signals, wherein said magnetic recording medium comprises a magnetic layer comprising a hexagonal ferrite ferromagnetic powder and a binder or comprises a nonmagnetic layer comprise a nonmagnetic powder and a binder and a magnetic layer comprising a hexagonal ferrite ferromagnetic powder and a binder in this order on a nonmagnetic support. Said magnetic layer has a thickness equal to or less than 0.2 μm, and said hexagonal ferrite ferromagnetic powder has an average plate diameter being 1/30 or less of the magnetically recorded track width as well as ½ or less of the thickness of the magnetic layer.