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公开(公告)号:US06620251B2
公开(公告)日:2003-09-16
申请号:US09799562
申请日:2001-03-07
申请人: Junichi Kitano
发明人: Junichi Kitano
IPC分类号: C23C1412
CPC分类号: H01L21/02046 , B08B7/0057 , G03F7/085 , G03F7/16 , H01L21/67028 , Y10S134/902
摘要: A closed container composed of a lid body and a lower container are provided in a cover body, and a supply pipe for nitrogen gas is connected to the cover body. A light source unit including UV lamps in the lid body is provided to face a mounting table in the closed container, and a gas supply path for HMDS gas is provided on the outer side from the light source unit. The inside of the cover body is first brought to a nitrogen atmosphere, a wafer is irradiated with ultraviolet rays with the lid body of the closed container opened to perform cleaning. Subsequently, the lid body is closed and the HMDS gas is introduced into the closed container to perform hydrophobic processing for the wafer. This removes deposits such as organic substances adhering to the wafer W through the irradiation with the ultraviolet rays, thereby improving coating properties of a resist solution.
摘要翻译: 由盖体和下容器构成的密闭容器设置在盖体内,氮气供给管与盖体连接。 在盖体内设置包括紫外灯的光源单元,以与封闭容器内的安装台相对,并且在从光源单元的外侧设置用于HMDS气体的气体供给路径。 首先将盖体的内部带入氮气氛,在密封容器的盖体开放的状态下用紫外线照射晶片进行清洗。 随后,关闭盖体,并将HMDS气体引入密封容器中以对晶片进行疏水处理。 通过紫外线的照射来除去附着在晶片W上的有机物质等沉积物,提高抗蚀剂溶液的涂布性。
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公开(公告)号:USD728306S1
公开(公告)日:2015-05-05
申请号:US29474100
申请日:2014-05-30
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公开(公告)号:US20100117011A1
公开(公告)日:2010-05-13
申请号:US12450605
申请日:2008-04-04
申请人: Junichi Kitano , Takashi Wada , Takeshi Kusunoki
发明人: Junichi Kitano , Takashi Wada , Takeshi Kusunoki
IPC分类号: F16K7/04
CPC分类号: F16K7/068
摘要: A device for stopping a flow of fluid in a fixed length of tube with an actuator simple in construction is provided. The stopping device is free of direct touch with the fluid inside the tube, expected not to obstruct the flow in the tube as permitted as possible at normal condition, expected to perform both detection and control with a single device, and further invulnerable to kinds of fluids. The device for stopping a flow of fluid includes a tube holder to keep a tube in looped configuration, a movable part pressing the looped configuration of the tube. Pressing of the looped configuration of the tube make a snapped bent to stop the flow of fluid passed through the tube. Putting the movable part back into place results in the tube's returning from the configuration having the bent, allowing the fluid flowing again through the tube.
摘要翻译: 提供一种用于在构造简单的致动器中停止固定长度的管中的流体流动的装置。 止动装置与管内的流体无直接接触,预期在正常状态下尽可能允许阻止管中的流动,预期用单个装置进行检测和控制,并且进一步不易受到各种 流体。 用于停止流体流动的装置包括管保持器以将管保持为环形构造,可动部分压缩管的环形构造。 按压管的环形构造使得卡扣弯曲以停止通过管的流体的流动。 将可移动部分放回原位导致管从具有弯曲的构造返回,允许流体再次流过管。
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公开(公告)号:US20100047725A1
公开(公告)日:2010-02-25
申请号:US12609425
申请日:2009-10-30
申请人: Yuko ONO , Junichi Kitano
发明人: Yuko ONO , Junichi Kitano
IPC分类号: G03C1/00
CPC分类号: G03D5/00 , G03F7/3028 , G03F7/322 , Y10S134/902
摘要: In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.
摘要翻译: 在通过将显影液供给到形成在基板的表面上的抗蚀剂膜上的基板进行显影处理的显影方法中,本发明将基板表面的ζ电位控制在与 不溶物质的ζ电位漂浮在显影液中,从而防止或降低不溶物质对抗蚀剂膜和基材的粘附。 这样可以弥补发展缺陷的发生。 还可以通过向基板上的液体供给酸性液体,或者控制基板上的液体的pH值来控制ζ的绝对值,从而可以防止或抑制不溶性物质与抗蚀剂膜和基材的粘附 潜在的不溶物质。
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公开(公告)号:US20070127916A1
公开(公告)日:2007-06-07
申请号:US11673257
申请日:2007-02-09
申请人: Junichi Kitano , Yuji Matsuyama , Takahiro Kitano , Takayuki Katano , Hidefumi Matsui , Yo Suzuki , Masami Yamashita , Toru Aoyama , Hiroyuki Iwaki , Satoru Shimura , Masatoshi Deguchi , Kousuke Yoshihara , Naruaki Iida
发明人: Junichi Kitano , Yuji Matsuyama , Takahiro Kitano , Takayuki Katano , Hidefumi Matsui , Yo Suzuki , Masami Yamashita , Toru Aoyama , Hiroyuki Iwaki , Satoru Shimura , Masatoshi Deguchi , Kousuke Yoshihara , Naruaki Iida
IPC分类号: G03D5/00
CPC分类号: H01L21/67178 , G03F7/70991 , H01L21/67017 , H01L21/6715 , H01L21/67161 , H01L21/67184 , H01L21/67742 , H01L21/67778 , Y10T29/41
摘要: On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.
摘要翻译: 在涂覆和显影处理系统中由分隔板,即盒式磁带站,加工站和界面部分划分的各个区域之上,提供用于向各个区域供应惰性气体的气体供应部分。 在各个区域的底部设置用于各区域的排气的排气管。 通过将不含杂质的惰性气体(例如氧气和细颗粒)从各个气体供应区域供应到各个区域中并且从排气管排出各个区域中的气氛,将各个区域中的气氛保持在清洁状态。
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公开(公告)号:US06955485B2
公开(公告)日:2005-10-18
申请号:US10373063
申请日:2003-02-26
申请人: Yuko Ono , Junichi Kitano
发明人: Yuko Ono , Junichi Kitano
IPC分类号: G03F7/30 , G03D5/00 , B08B3/02 , C25F3/04 , H03L21/302
CPC分类号: G03D5/00 , G03F7/3028 , G03F7/322 , Y10S134/902
摘要: In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.
摘要翻译: 在通过将显影液供给到形成在基板的表面上的抗蚀剂膜上的基板进行显影处理的显影方法中,本发明将基板表面的ζ电位控制在与 不溶物质的ζ电位漂浮在显影液中,从而防止或降低不溶物质对抗蚀剂膜和基材的粘附。 这样可以弥补发展缺陷的发生。 还可以通过向基板上的液体供给酸性液体,或者控制基板上的液体的pH值来控制ζ的绝对值,从而可以防止或抑制不溶性物质与抗蚀剂膜和基材的粘附 潜在的不溶物质。
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公开(公告)号:US06875281B2
公开(公告)日:2005-04-05
申请号:US09849259
申请日:2001-05-07
申请人: Junichi Kitano , Yuji Matsuyama , Takahiro Kitano
发明人: Junichi Kitano , Yuji Matsuyama , Takahiro Kitano
CPC分类号: H01L21/67253 , G03F7/168 , H01L21/67028 , Y10S414/135
摘要: A system for performing a coating and developing treatment for a substrate. The system includes a processing zone having a coating treatment unit, a developing treatment unit, and a heat treatment unit. An interface section carries the substrate between the processing zone and an aligner not included in the system for performing an exposure processing for the substrate. A unit measures the density of impurities at least inside the processing zone or the interface section, and a reduced-pressure impurity removing unit has a chamber which can be closed airtightly for reducing the pressure inside the chamber to a predetermined pressure before the substrate undergoes the exposure processing to remove the impurities adhering to the coating layer on the substrate inside the chamber for a predetermined time. A reduced-pressure control unit controls at least the predetermined pressure or predetermined time based on the value measured by the density measuring unit.
摘要翻译: 一种用于对基底进行涂覆和显影处理的系统。 该系统包括具有涂层处理单元,显影处理单元和热处理单元的处理区域。 接口部分将处理区域和不包括在系统中的对准器之间的衬底承载用于对衬底进行曝光处理。 一个单元至少在处理区域或接口部分内部测量杂质的密度,并且减压杂质去除单元具有可以气密地封闭的腔室,以在衬底经历了衬底经历之前将腔室内的压力降低到预定压力 曝光处理以除去粘附在室内的基板上的涂层的杂质达预定时间。 减压控制单元基于由密度测量单元测量的值至少控制预定压力或预定时间。
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公开(公告)号:US06585430B2
公开(公告)日:2003-07-01
申请号:US09850032
申请日:2001-05-08
申请人: Yuji Matsuyama , Junichi Kitano , Takahiro Kitano
发明人: Yuji Matsuyama , Junichi Kitano , Takahiro Kitano
IPC分类号: G03D500
CPC分类号: H01L21/67178 , G03F7/168 , H01L21/67017 , H01L21/67225
摘要: The present invention is a system for performing coating and developing treatment for a substrate, which comprises a treatment section having a coating treatment unit for forming a coating film on the substrate, a developing treatment unit for developing the substrate, a thermal treatment unit for performing thermal treatment for the substrate, and a first carrier unit for carrying the substrate into/out of these coating treatment unit, developing treatment unit, and thermal treatment unit. The system of the present invention further comprises an interface section having a second carrier unit for carrying the substrate through a route at least between the treatment section and an exposure processing unit provided outside the system for performing exposure processing for the substrate. The system of the present invention still further comprises a pressure reducing and removing unit for removing impurities adhering to the coating film on the substrate by suction in a chamber before the substrate is subjected to the exposure processing. According to the present invention, before exposure processing, impurities at molecular level such as oxygen, ozone, and organic substances and impurities such as particulates which adhere to the coating film of the substrate can be removed, whereby exposure processing is suitably performed, resulting in a rise in yield.
摘要翻译: 本发明是一种用于对基板进行涂覆和显影处理的系统,其包括具有在基板上形成涂膜的涂布处理单元的处理部分,用于显影基板的显影处理单元,用于执行 用于基板的热处理,以及用于将基板搬入/移出这些涂布处理单元,显影处理单元和热处理单元的第一载体单元。 本发明的系统还包括接口部分,其具有第二载体单元,用于至少在处理部分和设置在系统外部的曝光处理单元之间的路线承载基板,用于对基板进行曝光处理。 本发明的系统还包括减压除去单元,用于在对基板进行曝光处理之前通过抽吸在室内去除附着在基板上的杂质的杂质。根据本发明,在曝光处理之前 可以除去分子水平的杂质如氧,臭氧和有机物质以及附着在基材的涂膜上的微粒等杂质,从而适当地进行曝光处理,导致产率提高。
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公开(公告)号:US06518718B2
公开(公告)日:2003-02-11
申请号:US09815681
申请日:2001-03-23
申请人: Syunsaku Koga , Junichi Kitano
发明人: Syunsaku Koga , Junichi Kitano
IPC分类号: H02P506
CPC分类号: B60L15/005 , Y02T10/645
摘要: Three-phase/d-q converters convert an output voltage V outputted from a power converter and a coil current flowing through a propulsion coil to a voltage and a current in a dq rotary coordinate system, respectively. A speed electromotive force observer estimates speed electromotive force based on these voltage and current, and a vehicle angular speed &ohgr;, and a speed electromotive force phase generator calculates a speed electromotive force phase &thgr;e based on the estimated speed electromotive force Zd, Zq. A phase synchronization controller constituted as a secondary PI control system stabilizes the speed electromotive force phase &thgr;e and outputs it as a phase reference &thgr;*. Accordingly, it is possible in a system of an LSM vehicle to obtain the stable phase reference &thgr;* with a minimum deviation even when the vehicle is running at low speed.
摘要翻译: 三相/ d-q转换器将从功率转换器输出的输出电压V和流过推进线圈的线圈电流分别转换成dq旋转坐标系中的电压和电流。 速度电动势观测器基于这些电压和电流估计速度电动势,并且车辆角速度ω和速度电动势相位发生器基于估计的速度电动势Zd,Zq来计算速度电动势相位θe。 作为次级PI控制系统构成的相位同步控制器稳定速度电动势相位θe并将其作为相位基准θ*输出。 因此,即使当车辆以低速行驶时,LSM车辆的系统也可以以最小偏差获得稳定的相位基准θ*。
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公开(公告)号:US06485203B2
公开(公告)日:2002-11-26
申请号:US09737473
申请日:2000-12-18
申请人: Takayuki Katano , Hidefumi Matsui , Junichi Kitano , Yo Suzuki , Masami Yamashita , Toru Aoyama , Hiroyuki Iwaki , Satoru Shimura
发明人: Takayuki Katano , Hidefumi Matsui , Junichi Kitano , Yo Suzuki , Masami Yamashita , Toru Aoyama , Hiroyuki Iwaki , Satoru Shimura
IPC分类号: G03D500
CPC分类号: H01L21/67178 , B05C11/08 , H01L21/67248 , H01L21/67742 , H01L21/67748 , H01L21/67754
摘要: A developing unit, a coating unit and a plurality of cooling plates are arranged in a process station which performs a resist coating and so on and a wafer is transferred among them by a substrate transfer device. The temperature of an area to where the wafer is transferred is detected by a temperature/humidity detector and the temperature of the wafer which is cooled by the cooling plates is adjusted accordingly based on a detected value so that the temperature of the wafer when transferred to the coating unit becomes a coating temperature of a processing solution. Thereby, the wafer is transferred to the coating unit while maintaining its temperature with high accuracy to be coated with a resist solution, so that a formation of an uneven processing due to the temperature change can be prevented and a uniform processing can be performed.
摘要翻译: 显影单元,涂布单元和多个冷却板布置在执行抗蚀剂涂层等的处理站中,并且通过基板传送装置在晶片之间转印晶片。 通过温度/湿度检测器检测晶片转移到的区域的温度,并且基于检测值相应地调节由冷却板冷却的晶片的温度,使得晶片转移到 涂布单元成为处理溶液的涂布温度。 由此,将晶片转印到涂布单元,同时高精度地保持其温度以涂覆抗蚀剂溶液,从而可以防止由温度变化引起的不均匀处理的形成,并且可以进行均匀的处理。
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