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公开(公告)号：US07208066B2
公开(公告)日：2007-04-24
申请号：US10649780
申请日：2003-08-28
申请人： Junichi Kitano , Yuji Matsuyama , Takahiro Kitano , Takayuki Katano , Hidefumi Matsui , Yo Suzuki , Masami Yamashita , Toru Aoyama , Hiroyuki Iwaki , Satoru Shimura , Masatoshi Deguchi , Kousuke Yoshihara , Naruaki Iida
发明人： Junichi Kitano , Yuji Matsuyama , Takahiro Kitano , Takayuki Katano , Hidefumi Matsui , Yo Suzuki , Masami Yamashita , Toru Aoyama , Hiroyuki Iwaki , Satoru Shimura , Masatoshi Deguchi , Kousuke Yoshihara , Naruaki Iida
IPC分类号： C23F1/00 , H01L21/306 , B05C11/00
CPC分类号： H01L21/67178 , G03F7/70991 , H01L21/67017 , H01L21/6715 , H01L21/67161 , H01L21/67184 , H01L21/67742 , H01L21/67778 , Y10T29/41
摘要： On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.
摘要翻译： 在涂覆和显影处理系统中由分隔板，即盒式磁带站，加工站和界面部分划分的各个区域之上，提供用于向各个区域供应惰性气体的气体供应部分。 在各个区域的底部设置用于各区域的排气的排气管。 通过将不含杂质的惰性气体（例如氧气和细颗粒）从各个气体供应区域供应到各个区域中并且从排气管排出各个区域中的气氛，将各个区域中的气氛保持在清洁状态。
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公开(公告)号：US20050048421A1
公开(公告)日：2005-03-03
申请号：US10964695
申请日：2004-10-15
申请人： Junichi Kitano , Yuji Matsuyama , Takahiro Kitano
发明人： Junichi Kitano , Yuji Matsuyama , Takahiro Kitano
IPC分类号： G03F7/38 , G03F7/16 , H01L21/00 , H01L21/027 , G03C1/76
CPC分类号： H01L21/67253 , G03F7/168 , H01L21/67028 , Y10S414/135
摘要： In a coating and developing treatment for a substrate, the present invention comprises the steps of: supplying a coating solution to the substrate to form a coating layer on the substrate; performing a developing treatment for the substrate in the processing zone after it undergoes an exposure processing by an aligner not included in the system; and carrying the substrate into the chamber after the step of forming the coating layer and before the exposure processing and thereafter reducing the pressure inside the airtightly closed chamber to a predetermined pressure to remove impurities adhering to the substrate inside the chamber from the substrate for a predetermined time, wherein the predetermined pressure and the predetermined time are adjusted based on the density of the impurities measured inside the processing zone. According to the present invention, impurities at a molecule level such as moisture, vapor, oxygen, ozone, and organic substance, and impurities such as fine particles, which adhere to the coating layer of the substrate, can be removed before the exposure processing so that the exposure processing can be performed in a preferable condition. Since the pressure, time, and pressure-reducing speed at the time of reducing the pressure are adjusted based on the density of the impurities measured in a predetermined position, the impurities adhering to the substrate such as moisture and oxygen can be removed under a preferable minimum requirement condition according to the adhering amount of the impurities.
摘要翻译： 在基材的涂布和显影处理中，本发明包括以下步骤：向基材供给涂布溶液以在基材上形成涂层; 在不包括在系统中的对准器进行曝光处理之后，对处理区中的基板进行显影处理; 并且在形成涂层的步骤之后并且在曝光处理之前将衬底运送到室中，然后将气密封闭室内的压力降低到预定压力，以从衬底移除附着在室内的衬底上的杂质，以预定 时间，其中基于在处理区内测量的杂质的密度来调整预定压力和预定时间。 根据本发明，在曝光处理之前可以除去附着在基材的涂层上的分子水平的杂质如水分，蒸汽，氧气，臭氧和有机物质以及粘附到基材的涂层的杂质如细颗粒 可以在优选的条件下进行曝光处理。 由于基于在预定位置测量的杂质的密度来调节压力降低时的压力，时间和减压速度，因此可以在优选的情况下去除附着在基底上的杂质，例如水分和氧气 最低要求条件根据杂质的粘附量。
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公开(公告)号：US06884298B2
公开(公告)日：2005-04-26
申请号：US10309273
申请日：2002-12-04
CPC分类号： G03F7/168
摘要： A coating and developing treatment system for performing coating and developing treatment. A coating treatment unit is configured to form a resist film on a substrate. A developing treatment unit is configured to develop the substrate. A heating/cooling unit includes a heat plate configured to continuously heat and a cooling plate configured to continuously cool in one casing the substrate on which the resist film has been formed by the coating treatment unit. A gas nozzle is configured to supply a treatment gas to the resist film formed on the substrate to form a protective film on a surface of the resist film. The gas nozzle is disposed on a cooling plate side in the heating/cooling unit. The gas nozzle is configured to move to a position above the substrate on the cooling plate during cooling at the cooling plate, to supply the treatment gas.
摘要翻译： 一种用于进行涂层和显影处理的涂层和显影处理系统。 涂布处理单元构造成在基板上形成抗蚀剂膜。 显影处理单元构造成显影基板。 加热/冷却单元包括被配置为连续加热的加热板和构造成在一个壳体中连续地冷却由涂覆处理单元形成有抗蚀剂膜的基板的冷却板。 气体喷嘴被构造成将处理气体供给到形成在基板上的抗蚀剂膜，以在抗蚀剂膜的表面上形成保护膜。 气体喷嘴设置在加热/冷却单元中的冷却板侧。 气体喷嘴构造成在冷却板冷却期间移动到冷却板上的基板上方的位置，以供应处理气体。
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公开(公告)号：US06620248B2
公开(公告)日：2003-09-16
申请号：US09820938
申请日：2001-03-30
申请人： Takahiro Kitano , Yuji Matsuyama , Junichi Kitano , Hiroyuki Hara
发明人： Takahiro Kitano , Yuji Matsuyama , Junichi Kitano , Hiroyuki Hara
IPC分类号： B05C1110
CPC分类号： H01L21/6715
摘要： In a coating apparatus for supplying a mixed solution of a resist solution and a thinner onto a wafer from a nozzle, the nozzle is connected to a mixed solution supply pipe, and the resist solution and the thinner are supplied to the mixed solution supply pipe from a resist solution supply pipe and a thinner supply pipe respectively through a junction pipe. The diameter of the junction pipe is set smaller than those of other supply pipes, whereby the resist solution and the thinner can be mixed efficiently in the junction pipe, and as a result the wafer is coated with the mixed solution so that a uniform film thickness can be obtained within the surface of the wafer.
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公开(公告)号：US06518199B2
公开(公告)日：2003-02-11
申请号：US09851134
申请日：2001-05-09
IPC分类号： H01L2131
CPC分类号： G03F7/168
摘要： The present invention relates to a method for performing coating and developing treatment for a substrate, which comprises the steps of: supplying a coating solution to the substrate to form a coating film on the substrate; performing heat treatment for the substrate on which the coating film is formed; cooling the substrate after the heat treatment; performing exposure processing for the coating film formed on the substrate; and developing the substrate after the exposure processing, and further comprises the step of supplying a treatment gas to form a treatment film on a surface of the coating film after the step of forming the coating film and before the step of performing the exposure processing for the substrate. According to the present invention, the treatment gas is supplied to form the treatment film on the surface of the coating film after the step of forming: the coating film and before the step of exposing the substrate, whereby the substrate can be protected from impurities such as oxygen and water vapor in an atmosphere by this treatment film.
摘要翻译： 本发明涉及对基材进行涂布和显影处理的方法，其特征在于包括以下步骤：向所述基材供给涂布溶液以在所述基材上形成涂膜; 对其上形成有涂膜的基板进行热处理; 热处理后冷却基板; 对形成在基板上的涂膜进行曝光处理; 并且在曝光处理之后显影衬底，并且还包括在形成涂膜的步骤之后并且在进行曝光处理的步骤之前，在涂膜的表面上提供处理气体以形成处理膜的步骤 基质。 根据本发明，在形成：涂膜的步骤和暴露基板的步骤之前，供给处理气体以在涂膜的表面上形成处理膜，从而可以保护基板免受杂质 作为该处理膜在大气中的氧气和水蒸汽。
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公开(公告)号：US06467976B2
公开(公告)日：2002-10-22
申请号：US09849260
申请日：2001-05-07
申请人： Yuji Matsuyama , Junichi Kitano , Takahiro Kitano
发明人： Yuji Matsuyama , Junichi Kitano , Takahiro Kitano
IPC分类号： G03D500
CPC分类号： H01L21/67178 , H01L21/67017 , H01L21/67225
摘要： The present invention has a processing zone having a coating unit for forming a coating film on a substrate, a developing unit for performing development of the substrate, a heat treatment unit for performing heat treatment of the substrate, and a first transfer device for transferring the substrate from/to the coating unit, the developing unit and the heat treatment unit, an interface section in which the substrate is transferred at least on a path between the processing zone and an exposure processing unit outside the system for performing exposure processing for the substrate, a casing for housing the processing zone and the interface section, a gas supply device for supplying an inert gas into the interface section, and an exhaust portion through which an atmosphere in the interface section is discharged, and the heat treatment unit, and a second transfer device for transferring the substrate on a path between the heat treatment unit and the exposure processing unit are disposed in the interface section. According to the present invention, impurities at a molecular level, such as oxygen, basic substances, ozone, and organic substances, can be prevented from adhering to a substrate, and thus treatment and processing for the substrate are suitably performed.
摘要翻译： 本发明的处理区域具有在基板上形成涂膜的涂布单元，进行基板显影的显影单元，对该基板进行热处理的热处理单元和将该基板进行热处理的第一输送装置 基板从涂覆单元，显影单元和热处理单元的基板，至少在处理区域和系统外部的曝光处理单元之间的路径上转移基板的接口部分，用于对基板进行曝光处理 ，用于容纳加工区域和界面部分的壳体，用于向界面部分供应惰性气体的气体供应装置，以及排出界面部分中的气体的排气部分和热处理单元，以及 第二转印装置，用于在热处理单元和曝光处理单元之间的路径上传送基板 界面部分。根据本发明，可以防止分子水平的诸如氧，碱性物质，臭氧和有机物质的杂质粘附到基底上，从而适当地进行基底的处理和加工。
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公开(公告)号：US20070127916A1
公开(公告)日：2007-06-07
申请号：US11673257
申请日：2007-02-09
申请人： Junichi Kitano , Yuji Matsuyama , Takahiro Kitano , Takayuki Katano , Hidefumi Matsui , Yo Suzuki , Masami Yamashita , Toru Aoyama , Hiroyuki Iwaki , Satoru Shimura , Masatoshi Deguchi , Kousuke Yoshihara , Naruaki Iida
发明人： Junichi Kitano , Yuji Matsuyama , Takahiro Kitano , Takayuki Katano , Hidefumi Matsui , Yo Suzuki , Masami Yamashita , Toru Aoyama , Hiroyuki Iwaki , Satoru Shimura , Masatoshi Deguchi , Kousuke Yoshihara , Naruaki Iida
IPC分类号： G03D5/00
CPC分类号： H01L21/67178 , G03F7/70991 , H01L21/67017 , H01L21/6715 , H01L21/67161 , H01L21/67184 , H01L21/67742 , H01L21/67778 , Y10T29/41
摘要： On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.
摘要翻译： 在涂覆和显影处理系统中由分隔板，即盒式磁带站，加工站和界面部分划分的各个区域之上，提供用于向各个区域供应惰性气体的气体供应部分。 在各个区域的底部设置用于各区域的排气的排气管。 通过将不含杂质的惰性气体（例如氧气和细颗粒）从各个气体供应区域供应到各个区域中并且从排气管排出各个区域中的气氛，将各个区域中的气氛保持在清洁状态。
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公开(公告)号：US06875281B2
公开(公告)日：2005-04-05
申请号：US09849259
申请日：2001-05-07
申请人： Junichi Kitano , Yuji Matsuyama , Takahiro Kitano
发明人： Junichi Kitano , Yuji Matsuyama , Takahiro Kitano
CPC分类号： H01L21/67253 , G03F7/168 , H01L21/67028 , Y10S414/135
摘要： A system for performing a coating and developing treatment for a substrate. The system includes a processing zone having a coating treatment unit, a developing treatment unit, and a heat treatment unit. An interface section carries the substrate between the processing zone and an aligner not included in the system for performing an exposure processing for the substrate. A unit measures the density of impurities at least inside the processing zone or the interface section, and a reduced-pressure impurity removing unit has a chamber which can be closed airtightly for reducing the pressure inside the chamber to a predetermined pressure before the substrate undergoes the exposure processing to remove the impurities adhering to the coating layer on the substrate inside the chamber for a predetermined time. A reduced-pressure control unit controls at least the predetermined pressure or predetermined time based on the value measured by the density measuring unit.
摘要翻译： 一种用于对基底进行涂覆和显影处理的系统。 该系统包括具有涂层处理单元，显影处理单元和热处理单元的处理区域。 接口部分将处理区域和不包括在系统中的对准器之间的衬底承载用于对衬底进行曝光处理。 一个单元至少在处理区域或接口部分内部测量杂质的密度，并且减压杂质去除单元具有可以气密地封闭的腔室，以在衬底经历了衬底经历之前将腔室内的压力降低到预定压力 曝光处理以除去粘附在室内的基板上的涂层的杂质达预定时间。 减压控制单元基于由密度测量单元测量的值至少控制预定压力或预定时间。
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公开(公告)号：US06585430B2
公开(公告)日：2003-07-01
申请号：US09850032
申请日：2001-05-08
申请人： Yuji Matsuyama , Junichi Kitano , Takahiro Kitano
发明人： Yuji Matsuyama , Junichi Kitano , Takahiro Kitano
IPC分类号： G03D500
CPC分类号： H01L21/67178 , G03F7/168 , H01L21/67017 , H01L21/67225
摘要： The present invention is a system for performing coating and developing treatment for a substrate, which comprises a treatment section having a coating treatment unit for forming a coating film on the substrate, a developing treatment unit for developing the substrate, a thermal treatment unit for performing thermal treatment for the substrate, and a first carrier unit for carrying the substrate into/out of these coating treatment unit, developing treatment unit, and thermal treatment unit. The system of the present invention further comprises an interface section having a second carrier unit for carrying the substrate through a route at least between the treatment section and an exposure processing unit provided outside the system for performing exposure processing for the substrate. The system of the present invention still further comprises a pressure reducing and removing unit for removing impurities adhering to the coating film on the substrate by suction in a chamber before the substrate is subjected to the exposure processing. According to the present invention, before exposure processing, impurities at molecular level such as oxygen, ozone, and organic substances and impurities such as particulates which adhere to the coating film of the substrate can be removed, whereby exposure processing is suitably performed, resulting in a rise in yield.
摘要翻译： 本发明是一种用于对基板进行涂覆和显影处理的系统，其包括具有在基板上形成涂膜的涂布处理单元的处理部分，用于显影基板的显影处理单元，用于执行 用于基板的热处理，以及用于将基板搬入/移出这些涂布处理单元，显影处理单元和热处理单元的第一载体单元。 本发明的系统还包括接口部分，其具有第二载体单元，用于至少在处理部分和设置在系统外部的曝光处理单元之间的路线承载基板，用于对基板进行曝光处理。 本发明的系统还包括减压除去单元，用于在对基板进行曝光处理之前通过抽吸在室内去除附着在基板上的杂质的杂质。根据本发明，在曝光处理之前 可以除去分子水平的杂质如氧，臭氧和有机物质以及附着在基材的涂膜上的微粒等杂质，从而适当地进行曝光处理，导致产率提高。
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公开(公告)号：US06633022B2
公开(公告)日：2003-10-14
申请号：US09819865
申请日：2001-03-29
申请人： Takahiro Kitano , Yuji Matsuyama , Junichi Kitano
发明人： Takahiro Kitano , Yuji Matsuyama , Junichi Kitano
IPC分类号： F27B514
CPC分类号： H01L21/67248
摘要： A controller controls the temperature of a hot plate and the degree of vacuum in a tightly closed space to a temperature and a pressure at levels at which a thinner contained in a resist applied to a wafer volatilizes and an acid generator, a quencher, and a polymer chain protecting group practically remain in the resist, for example, during heat processing. More specifically, the controller controls the temperature of the hot plate and the degree of vacuum in the tightly closed space to bring the temperature of the hot plate to about 40° C., and the degree of vacuum in the tightly closed space to approximately 5 Torr. Thereby, the heat processing can be performed for the wafer so that the acid generator is uniformly dispersed in the resist, or the quencher is uniformly formed on the front face of the resist without breakage of the polymer chain protecting group.
摘要翻译： 控制器将热板的温度和紧密封闭的空间中的真空度控制在施加到晶片上的抗蚀剂中含有的薄膜的温度和压力波动，酸产生剂，猝灭剂和 聚合物链保护基实际上保留在抗蚀剂中，例如在热处理期间。 更具体地，控制器控制热板的温度和紧密封闭的空间中的真空度，使热板的温度达到约40℃，并且紧密封闭空间中的真空度约为5 托尔 因此，可以对晶片进行热处理，使得酸发生剂均匀地分散在抗蚀剂中，或者猝灭剂均匀地形成在抗蚀剂的正面上而不会破坏聚合物链保护基。
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