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公开(公告)号：US20100053823A1
公开(公告)日：2010-03-04
申请号：US12200181
申请日：2008-08-28
IPC分类号： G11B5/33
CPC分类号： H01F10/3263 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11C11/161 , H01F41/302 , H01L43/08 , H01L43/12
摘要： A magnetoresistive element includes a stack formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed, a first nonmagnetic layer, a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, a first circumferential wall provided on the second nonmagnetic layer in contact with a circumferential surface of the second fixed layer to surround the second fixed layer, and made of an insulator, and a second circumferential wall provided on the first nonmagnetic layer in contact with a circumferential surface of the free layer to surround the free layer, and made of an insulator.
摘要翻译： 磁阻元件包括通过顺序层叠其中固定有磁化方向的第一固定层，第一非磁性层，磁化方向可变的自由层，第二非磁性层和第二固定层而形成的叠层，其中 磁化方向是固定的，设置在第二非磁性层上的与第二固定层的圆周表面接触以围绕第二固定层并由绝缘体制成的第一周向壁和设置在第一非磁性层上的第二周向壁 层与自由层的周向表面接触以包围自由层，并由绝缘体制成。
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公开(公告)号：US08309950B2
公开(公告)日：2012-11-13
申请号：US12700536
申请日：2010-02-04
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/42392 , H01L29/66439 , H01L29/775 , H01L29/78696
摘要： First semiconductor layers are in source/drain regions on the semiconductor substrate. A second semiconductor layer comprises first portions on the first semiconductor layers and a second portion on a channel region between the source/drain regions. Third semiconductor layers are on the first portions of the second semiconductor layer. A gate electrode is around the second portion of the second semiconductor layer via an insulating film. Contact plugs are in the first semiconductor layers, the first portions of the second semiconductor layers and the third semiconductor layers in the source/drain regions. A diameter of the contact plug in the second semiconductor layer is smaller than a diameter of the contact plug in the first and third semiconductor layers.
摘要翻译： 第一半导体层位于半导体衬底上的源/漏区中。 第二半导体层包括第一半导体层上的第一部分和源/漏区之间的沟道区上的第二部分。 第三半导体层位于第二半导体层的第一部分上。 栅电极经由绝缘膜在第二半导体层的第二部分周围。 接触插塞位于第一半导体层中，第二半导体层的第一部分和源/漏区中的第三半导体层。 第二半导体层中的接触插塞的直径小于第一和第三半导体层中的接触插塞的直径。
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公开(公告)号：US08203193B2
公开(公告)日：2012-06-19
申请号：US13163349
申请日：2011-06-17
CPC分类号： H01L43/08 , B82Y10/00 , H01L27/228
摘要： A magnetic random access memory includes a magnetoresistive effect element which has a fixed layer, a recording layer and a non-magnetic layer provided between the fixed layer and the recording layer and in which the magnetization directions of the fixed layer and the recording layer are brought into a parallel state or an anti-parallel state in accordance with a direction of a current flowing between the fixed layer and the recording layer, a first contact which is connected to the recording layer and in which a contact area between the recording layer and the first contact is smaller than an area of the recording layer, and a cap layer which is provided between the first contact and the recording layer and which directly comes in contact with the first contact and which has a resistance higher than a resistance of the recording layer.
摘要翻译： 磁性随机存取存储器包括磁阻效应元件，其具有设置在固定层和记录层之间的固定层，记录层和非磁性层，并且固定层和记录层的磁化方向被带入 根据在固定层和记录层之间流动的电流的方向，形成平行状态或反平行状态;第一触点连接到记录层，并且记录层和记录层之间的接触区域 第一触点小于记录层的面积，盖层设置在第一触点和记录层之间，并直接与第一触点接触并且具有高于记录层电阻的电阻 。
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公开(公告)号：US08081505B2
公开(公告)日：2011-12-20
申请号：US12556389
申请日：2009-09-09
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/12
摘要： A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %.
摘要翻译： 磁阻元件包括堆叠结构，其包括具有固定磁化方向的固定层，具有可变磁化方向的记录层和夹在固定层和记录层之间的非磁性层，覆盖周向表面的第一保护膜 层叠结构，由氮化硅制成，第二保护膜覆盖第一保护膜的周面，由氮化硅构成。 第一保护膜中的氢含量不大于4原子％，第二保护膜中的氢含量不低于6原子％。
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公开(公告)号：US07919826B2
公开(公告)日：2011-04-05
申请号：US12108093
申请日：2008-04-23
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , H01L27/222 , H01L43/12
摘要： A magnetoresistive element includes a first stacked structure formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed and a first nonmagnetic layer, a second stacked structure formed on the first stacked structure by sequentially stacking a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, and a circumferential wall formed in contact with a circumferential surface of the second stacked structure to surround the second stacked structure, and made of an insulator. A circumferential surface of the first stacked structure is substantially perpendicular. The second stacked structure has a tapered shape which narrows upward.
摘要翻译： 磁阻元件包括通过顺序层叠形成磁化方向的第一固定层和第一非磁性层的第一堆叠结构而形成的第一堆叠结构，通过顺序堆叠在第一层叠结构上形成的第二堆叠结构，其中磁化方向 可变化的第二非磁性层和固定有磁化方向的第二固定层，以及与第二堆叠结构的周向表面接触以围绕第二堆叠结构并由绝缘体制成的周壁。 第一堆叠结构的圆周表面基本垂直。 第二堆叠结构具有向上变窄的锥形形状。
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公开(公告)号：US20080308887A1
公开(公告)日：2008-12-18
申请号：US11943831
申请日：2007-11-21
申请人： Yoshiaki Asao , Takeshi Kajiyama
发明人： Yoshiaki Asao , Takeshi Kajiyama
IPC分类号： H01L29/82
CPC分类号： G11C11/16 , B82Y10/00 , G11C13/0004 , G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/79 , H01L27/228 , H01L27/24
摘要： A semiconductor memory device includes first to third wiring layers formed above a semiconductor substrate, extending in a first direction, and sequentially arranged in a second direction perpendicular to the first direction, a plurality of active areas formed in the semiconductor substrate, and extending in a direction oblique to the first direction, first and second selection transistors formed in each of the active areas, and sharing a source region electrically connected to the second wiring layer, a first magnetoresistive element having one terminal electrically connected to a drain region of the first selection transistor, and the other terminal electrically connected to the first wiring layer, and a second magnetoresistive element having one terminal electrically connected to a drain region of the second selection transistor, and the other terminal electrically connected to the third wiring layer.
摘要翻译： 半导体存储器件包括形成在半导体衬底上的第一至第三布线层，沿第一方向延伸，并且沿垂直于第一方向的第二方向依次布置;形成在半导体衬底中的多个有源区， 形成在每个有源区中的第一和第二选择晶体管，并且共用与第二布线层电连接的源极区;第一磁阻元件，具有与第一选择区的漏极区域电连接的一个端子 晶体管，另一个端子电连接到第一布线层，以及第二磁阻元件，其具有一个端子电连接到第二选择晶体管的漏极区域，另一个端子电连接到第三布线层。
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公开(公告)号：US20080265347A1
公开(公告)日：2008-10-30
申请号：US12108093
申请日：2008-04-23
CPC分类号： H01L43/08 , H01L27/222 , H01L43/12
摘要： A magnetoresistive element includes a first stacked structure formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed and a first nonmagnetic layer, a second stacked structure formed on the first stacked structure by sequentially stacking a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, and a circumferential wall formed in contact with a circumferential surface of the second stacked structure to surround the second stacked structure, and made of an insulator. A circumferential surface of the first stacked structure is substantially perpendicular. The second stacked structure has a tapered shape which narrows upward.
摘要翻译： 磁阻元件包括通过顺序层叠形成磁化方向的第一固定层和第一非磁性层的第一堆叠结构而形成的第一堆叠结构，通过顺序堆叠在第一层叠结构上形成的第二堆叠结构，其中磁化方向 可变化的第二非磁性层和固定有磁化方向的第二固定层，以及与第二堆叠结构的周向表面接触以围绕第二堆叠结构并由绝缘体制成的周壁。 第一堆叠结构的圆周表面基本垂直。 第二堆叠结构具有向上变窄的锥形形状。
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公开(公告)号：US20080205126A1
公开(公告)日：2008-08-28
申请号：US12037425
申请日：2008-02-26
申请人： Takeshi Kajiyama , Yoshiaki Asao
发明人： Takeshi Kajiyama , Yoshiaki Asao
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/10
摘要： A magnetic random access memory which is a memory cell array including a magnetoresistive effect element having a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction is reversible, and a non-magnetic layer provided between the fixed layer and the recording layer, wherein all conductive layers in the memory cell array arranged below the magnetoresistive effect element are formed of materials each containing an element selected from a group including W, Mo, Ta, Ti, Zr, Nb, Cr, Hf, V, Co, and Ni.
摘要翻译： 一种磁性随机存取存储器，其是包括具有固定磁化方向的固定层的磁阻效应元件，其磁化方向可逆的记录层和设置在固定层与记录层之间的非磁性层的存储单元阵列 其中，布置在磁阻效应元件下方的存储单元阵列中的所有导电层由各自含有选自包括W，Mo，Ta，Ti，Zr，Nb，Cr，Hf，V，Co和 倪
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公开(公告)号：US08592928B2
公开(公告)日：2013-11-26
申请号：US13237586
申请日：2011-09-20
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetic random access memory includes a selection element formed on a semiconductor substrate, an interlayer dielectric film formed above the selection element, a contact layer formed in the interlayer dielectric film, and electrically connected to the selection element, a lower electrode layer made of a metal material, and electrically connected to the contact layer, a metal oxide insulating film made of an oxide of the metal material, and surrounding a side surface of the lower electrode layer, a magnetoresistive element formed on the lower electrode layer, an upper electrode layer formed on the magnetoresistive element, a sidewall insulating film formed on a side surface of the magnetoresistive element and a side surface of the upper electrode layer, and a bit line electrically connected to the upper electrode layer.
摘要翻译： 根据一个实施例，磁性随机存取存储器包括形成在半导体衬底上的选择元件，形成在选择元件上方的层间电介质膜，形成于层间电介质膜中的电连接到选择元件的接触层， 电极层，与金属材料电连接，由金属材料的氧化物构成的金属氧化物绝缘膜，围绕下部电极层的侧面，形成在下部电极层上的磁阻元件 形成在磁阻元件上的上电极层，形成在磁阻元件的侧面上的侧壁绝缘膜和上电极层的侧面，以及与上电极层电连接的位线。
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公开(公告)号：US20120068286A1
公开(公告)日：2012-03-22
申请号：US13237586
申请日：2011-09-20
CPC分类号： H01L27/228 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetic random access memory includes a selection element formed on a semiconductor substrate, an interlayer dielectric film formed above the selection element, a contact layer formed in the interlayer dielectric film, and electrically connected to the selection element, a lower electrode layer made of a metal material, and electrically connected to the contact layer, a metal oxide insulating film made of an oxide of the metal material, and surrounding a side surface of the lower electrode layer, a magnetoresistive element formed on the lower electrode layer, an upper electrode layer formed on the magnetoresistive element, a sidewall insulating film formed on a side surface of the magnetoresistive element and a side surface of the upper electrode layer, and a bit line electrically connected to the upper electrode layer.
摘要翻译： 根据一个实施例，磁性随机存取存储器包括形成在半导体衬底上的选择元件，形成在选择元件上方的层间电介质膜，形成于层间电介质膜中的电连接到选择元件的接触层， 电极层，与金属材料电连接，由金属材料的氧化物构成的金属氧化物绝缘膜，围绕下部电极层的侧面，形成在下部电极层上的磁阻元件 形成在磁阻元件上的上电极层，形成在磁阻元件的侧面上的侧壁绝缘膜和上电极层的侧面，以及与上电极层电连接的位线。
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