公开(公告)号：US20080197433A1

公开(公告)日：2008-08-21

申请号：US12034461

申请日：2008-02-20

申请人： Yutaka Higo ,  Minoru Ikarashi ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Yutaka Higo ,  Minoru Ikarashi ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/16 ,  Y10S977/933

摘要： Disclosed is a memory device including a memory layer retaining information thereon based on a magnetization state of a magnetic body, a fixed-magnetization layer having a fixed-magnetization direction formed on the memory layer through a non-magnetic layer, and two metal wiring lines formed adjacent to both ends of the fixed-magnetization layer, in the memory, the magnetization direction of the memory layer is changed by passing an electric current therethrough in a stacked direction to record the information on the memory layer.

摘要翻译： 公开了一种存储器件，其包括：基于磁体的磁化状态保持其上的信息的存储器层;通过非磁性层形成在存储层上的具有固定磁化方向的固定磁化层;以及两个金属布线 在存储器中与固定磁化层的两端相邻地形成，通过使堆积方向的电流通过而使存储层的磁化方向变化，从而将信息记录在存储层上。

公开(公告)号：US20080176100A1

公开(公告)日：2008-07-24

申请号：US12013862

申请日：2008-01-14

申请人： Naoki Uetake ,  Hiroshi Kano ,  Akira Saito

发明人： Naoki Uetake ,  Hiroshi Kano ,  Akira Saito

IPC分类号： B32B9/00 ,  C09K11/00 ,  B05D5/12

CPC分类号： H01L51/001 ,  C23C14/24

摘要： An evaporating device including: a material retaining part for being filled with an evaporating material and heating the evaporating material; an opening for dispersing the evaporating material vaporized from the material retaining part toward an evaporated member; and a high-temperature body disposed between the material retaining part and the opening, the high-temperature body being heated to a temperature higher than a temperature of the evaporating material heated in the material retaining part.

摘要翻译： 一种蒸发装置，包括：用于填充蒸发材料并加热蒸发材料的材料保持部分; 用于将从所述材料保持部分蒸发的蒸发材料分散到蒸发构件的开口; 以及设置在所述材料保持部和所述开口之间的高温体，所述高温体被加热到高于在所述材料保持部中加热的所述蒸发材料的温度的温度。

公开(公告)号：US20080151607A1

公开(公告)日：2008-06-26

申请号：US11940915

申请日：2007-11-15

申请人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： G11C11/02

CPC分类号： G11C11/16 ,  Y10S977/935

摘要： Disclosed is a storage element having a storage layer retaining information based on a magnetization state of a magnetic material; a fixed-magnetization layer having a ferromagnetic layer; and an intermediate layer interposed between the storage layer and the fixed-magnetization layer. In the storage element, spin-polarized electrons are injected in a stacking direction to change a magnetization direction of the storage layer so that information is recorded in the storage layer, and resistivity of the ferromagnetic layer forming the storage layer is 8×10−7 Ωm or more.

摘要翻译： 公开了一种存储元件，其具有基于磁性材料的磁化状态保持信息的存储层; 具有铁磁层的固定磁化层; 以及介于所述存储层和所述固定磁化层之间的中间层。 在存储元件中，沿层叠方向注入自旋极化电子以改变存储层的磁化方向，从而将信息记录在存储层中，形成存储层的铁磁层的电阻率为8×10 -6， 7欧姆以上。

公开(公告)号：US20070065130A1

公开(公告)日：2007-03-22

申请号：US11523653

申请日：2006-09-20

申请人： Shinpei Fukumoto ,  Hiroshi Kano ,  Hideto Fujita ,  Haruo Hatanaka

发明人： Shinpei Fukumoto ,  Hiroshi Kano ,  Hideto Fujita ,  Haruo Hatanaka

IPC分类号： G03B17/00

CPC分类号： H04N5/23248 ,  G03B2217/005 ,  H04N5/23254 ,  H04N5/23264

摘要： A hand shake blur signal reduction means for reducing the hand shake blur signal using given reduction ratio in the horizontal direction and reduction ratio in the vertical direction; an image restoration filter generating means for generating the image restoration filter based on the hand shake blur signal reduced by the hand shake blur signal reduction means; an image reduction means for reducing the hand shake blur image at the reduction ratio same as the reduction ratios in the horizontal direction and the vertical direction used in reducing the hand shake blur signal in the hand shake blur signal reduction means; an image restoration means for performing image restoration on the hand shake blur image reduced by the image reduction means using the image restoration filter generated by the image restoration filter generating means; and an image enlargement means for generating the restored image for the hand shake blur image by enlarging the restored image restored by the image restoration means are arranged.

摘要翻译： 一种手抖动模糊信号降低装置，用于使用给定的水平方向的减速比和垂直方向的减速比来减少手抖动模糊信号; 图像恢复滤波器产生装置，用于基于由手抖动模糊信号减少装置减少的手抖动模糊信号产生图像恢复滤波器; 图像缩小装置，用于以减少手抖动模糊信号降低装置中的手抖抖模糊信号所用的水平方向和垂直方向上的缩小率减小比例减少手抖模糊图像; 图像恢复装置，用于使用由图像恢复滤波器生成装置生成的图像恢复滤波器，对由图像缩小装置减少的手抖抖模糊图像执行图像恢复; 并且布置用于通过放大由图像恢复装置恢复的恢复图像来产生用于手抖动模糊图像的恢复图像的图像放大装置。

公开(公告)号：US20070035673A1

公开(公告)日：2007-02-15

申请号：US11504026

申请日：2006-08-15

申请人： Hiroshi Sakurai ,  Hidenori Ikeno ,  Yuichi Yamaguchi ,  Hiroshi Kano

发明人： Hiroshi Sakurai ,  Hidenori Ikeno ,  Yuichi Yamaguchi ,  Hiroshi Kano

IPC分类号： G02F1/1343

CPC分类号： G02F1/136227 ,  G02F1/133553 ,  G02F2001/136231 ,  G02F2001/136236 ,  G02F2202/103 ,  G02F2203/02 ,  H01L27/1248 ,  H01L27/13

摘要： A reflection type liquid crystal display device having excellent display capability even if the number of the photolithography process is reduced and a process for producing the device. A process includes the steps of (a) forming a source/drain wiring by using a first mask; (b) forming a thin film transistor region and gate wiring by using a second mask; (c) forming an opening for a transistor, in a passivation film by using a third mask; (d) forming a rough surface of the interlayer insulating film and to form an opening for the transistor by using a fourth mask by halftone exposure, and (e) forming a reflective metal which extend through the respective openings for the transistor in the passivation film and the interlayer insulating film so that it is electrically connected to the source wiring by using a fifth mask.

摘要翻译： 即使减少光刻处理的数量，也具有优异的显示能力的反射型液晶显示装置及其制造方法。 一种方法包括以下步骤：（a）通过使用第一掩模形成源极/漏极布线; （b）通过使用第二掩模形成薄膜晶体管区域和栅极布线; （c）通过使用第三掩模在钝化膜中形成用于晶体管的开口; （d）形成层间绝缘膜的粗糙表面，并通过半色调曝光通过使用第四掩模形成用于晶体管的开口，以及（e）形成延伸穿过用于钝化膜中的晶体管的各个开口的反射金属 和层间绝缘膜，使其通过使用第五掩模与源极配线电连接。

公开(公告)号：US20070030724A1

公开(公告)日：2007-02-08

申请号：US11460135

申请日：2006-07-26

申请人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Hiroshi Kano

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  H01L27/228 ,  H01L43/10

摘要： The present invention provides a memory element including a memory layer that holds information based on a magnetization state of a magnetic substance, and a magnetization pinned layer that is provided for the memory layer with intermediary of an intermediate layer therebetween, the intermediate layer being composed of an insulator. Spin-polarized electrons are injected in a layer-stacking direction to thereby change a direction of magnetization of the memory layer, so that information is recorded in the memory layer. At least one ferromagnetic layer included in the memory layer is composed mainly of CoFeTa, and has Ta content in a range from 1 atomic percent (at %) to 20 at %.

摘要翻译： 本发明提供了一种存储元件，其包括存储层，其基于磁性物质的磁化状态保存信息;以及磁化钉扎层，其被设置在存储层之间，其间具有中间层，中间层由 绝缘体。 自旋极化电子以层叠方式注入，从而改变存储层的磁化方向，从而将信息记录在存储层中。 包含在存储层中的至少一个铁磁层主要由CoFeTa组成，并且Ta含量在1原子百分比（at％）至20at％的范围内。

公开(公告)号：US20060291841A1

公开(公告)日：2006-12-28

申请号：US11439969

申请日：2006-05-25

申请人： Shinpei Fukumoto ,  Hiroshi Kano ,  Haruo Hatanaka ,  Yutaka Kawamoto

发明人： Shinpei Fukumoto ,  Hiroshi Kano ,  Haruo Hatanaka ,  Yutaka Kawamoto

IPC分类号： G03B17/00

CPC分类号： G03B5/00 ,  G03B2205/0007 ,  H04N5/23248 ,  H04N5/23258 ,  H04N5/23264

摘要： An image stabilizing device has an image restoration processor configured to perform image restoration process for stabilizing hand movement included in an input image by using an image restoration filter created based on hand movement information, and an edge emphasizing processor configured to perform edge emphasizing process for emphasizing an edge of the input image. The image stabilizing device has a stabilization mode determiner configured to determine an image stabilization mode for stabilizing the input image based on a size of the hand movement created by the hand movement information. The image stabilization mode includes a first mode for performing the image restoration process, a second mode for performing the edge emphasizing process, and a third mode for performing none of the image restoration process and the edge emphasizing process.

公开(公告)号：US06947103B2

公开(公告)日：2005-09-20

申请号：US09996699

申请日：2001-11-30

申请人： Hiroshi Sakurai ,  Hidenori Ikeno ,  Yuichi Yamaguchi ,  Hiroshi Kano

发明人： Hiroshi Sakurai ,  Hidenori Ikeno ,  Yuichi Yamaguchi ,  Hiroshi Kano

IPC分类号： G02F1/1343 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/786 ,  G09G3/36 ,  H01L27/01 ,  H01L31/20

CPC分类号： G02F1/136227 ,  G02F1/133553 ,  G02F2001/136231 ,  G02F2001/136236 ,  G02F2202/103 ,  G02F2203/02 ,  H01L27/1248 ,  H01L27/13

摘要： A reflection type liquid crystal display device having excellent display capability even if the number of the photolithography process is reduced and a process for producing the device. A process includes the steps of (a) forming a source/drain wiring by using a first mask; (b) forming a thin film transistor region and gate wiring by using a second mask; (c) forming an opening for a transistor, in a passivation film by using a third mask; (d) forming a rough surface of the interlayer insulating film and to form an opening for the transistor by using a fourth mask by halftone exposure, and (e) forming a reflective metal which extend through the respective openings for the transistor in the passivation film and the interlayer insulating film so that it is electrically connected to the source wiring by using a fifth mask.

公开(公告)号：US20050162905A1

公开(公告)日：2005-07-28

申请号：US11088565

申请日：2005-03-24

申请人： Takeyuki Sone ,  Kazuhiro Bessho ,  Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Hiroshi Kano

发明人： Takeyuki Sone ,  Kazuhiro Bessho ,  Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Hiroshi Kano

IPC分类号： G01R33/09 ,  G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C11/00

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/15 ,  G11C11/16 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3277 ,  H01L27/228

摘要： There are provided a magnetoresistive effect element having a satisfactory magnetic characteristic and a magnetic memory device including this magnetoresistive effect element to produce excellent write/read characteristics. A magnetoresistive effect element 1 has a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) opposed to each other through an intermediate layer 6 to produce a magnetoresistive change by a current flowing to the direction perpendicular to the film plane, the magnetization free layer having a normalized resistance ranging from 2000 Ωnm2 to 10000 Ωnm2 where a product of a specific resistance obtained when a current flows to the film thickness direction of the magnetization free layer 7 and a film thickness is defined as the normalized resistance. A magnetic memory device includes this magnetoresistive effect element 1 and bit lines and word lines sandwiching the magnetoresistive effect element 1.

摘要翻译： 提供具有令人满意的磁特性的磁阻效应元件和包括该磁阻效应元件的磁存储器件，以产生优良的写/读特性。 磁阻效应元件1具有通过中间层6彼此相对的一对铁磁层（磁化固定层5和磁化自由层7），以通过流向垂直于膜平面的方向产生磁阻变化， 具有2000欧姆2至10000欧姆2的标准化电阻的无磁化层，其中当电流流过磁化的膜厚度方向时获得的电阻率的乘积 自由层7和膜厚度定义为归一化电阻。 磁存储器件包括该磁阻效应元件1和夹在磁阻效应元件1上的位线和字线。

公开(公告)号：US20050157542A1

公开(公告)日：2005-07-21

申请号：US11078942

申请日：2005-03-11

申请人： Masanori Hosomi ,  Kazuhiro Bessho ,  Kazuhiro Ohba ,  Tetsuya Mizuguchi ,  Yutaka Higo ,  Takeyuki Sone ,  Tetsuya Yamamoto ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Kazuhiro Bessho ,  Kazuhiro Ohba ,  Tetsuya Mizuguchi ,  Yutaka Higo ,  Takeyuki Sone ,  Tetsuya Yamamoto ,  Hiroshi Kano

IPC分类号： G11C11/15 ,  G11C11/00 ,  G11C11/14 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L43/08

CPC分类号： G11C11/16

摘要： In a magnetoresistive element which includes at least a pair of ferromagnetic layers stacked with having an intermediate layer inbetween and achieves a change in the magnetic resistance by permitting a current to flow in the direction which crosses the plane of the stacked layers, by virtue of having a construction wherein at least one ferromagnetic layer constituting an information recording layer has an amorphous structure containing a CoFeB or CoFeNiB alloy and has a plane form having a longer axis in one direction wherein both sides thereof along the longer axis direction form a straight line or a curved outward, and the both ends thereof in the longer axis direction form a curved or bent outward from, wherein the pattern form has an aspect ratio of 1:1.2 to 1:3.5, excellent asteroid curve having consistency in the properties can be stably obtained.