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241 条记录 (耗时 0.066 秒)

    Magneto-resistive effect element and magnetic memory
    32.
    发明授权
    Magneto-resistive effect element and magnetic memory 有权
    磁阻效应元件和磁存储器

    公开(公告)号：US07307302B2

    公开(公告)日：2007-12-11

    申请号：US10886547

    申请日：2004-07-09

    申请人： Yoshiaki Saito

    发明人： Yoshiaki Saito

    IPC分类号： H01L29/76

    CPC分类号： H01L43/08 ,  G11C11/16 ,  H01L27/228

    摘要： It is possible to obtain excellent heat stability even though the element is miniaturized and keep stable magnetic domains even though switching is repeated any number of times. A magneto-resistive effect element includes: a magnetization-pinned layer including a magnetic film having a spin moment oriented in a direction perpendicular to a film surface thereof and pinned in the direction; a magnetic recording layer having a spin moment oriented in a direction perpendicular to a film surface thereof; a nonmagnetic layer formed between the magnetization-pinned layer and the magnetic recording layer; and an anti-ferromagnetic film formed on at least side surfaces of the magnetization-pinned layer.

    摘要翻译： 即使元件小型化并且即使重复任意次数也保持稳定的磁畴，可以获得优异的热稳定性。 磁阻效应元件包括：磁化钉扎层，其包括具有在垂直于其膜表面的方向上定向的旋转力矩的磁性膜，并沿着该方向固定; 具有在垂直于其膜表面的方向上定向的旋转力矩的磁记录层; 形成在磁化固定层和磁记录层之间的非磁性层; 以及形成在所述磁化钉扎层的至少侧表面上的反铁磁膜。

    SPIN FET AND SPIN MEMORY
    33.
    发明申请
    SPIN FET AND SPIN MEMORY 失效
    旋转FET和旋转存储器

    公开(公告)号：US20070164336A1

    公开(公告)日：2007-07-19

    申请号：US11610100

    申请日：2006-12-13

    申请人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi

    发明人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi

    IPC分类号： H01L29/76 ,  H01L29/94

    CPC分类号： H01L29/66984 ,  G11C11/16 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： A spin FET according to an example of the present invention includes a magnetic pinned layer whose magnetization direction is fixed, a magnetic free layer whose magnetization direction is changed, a channel between the magnetic pinned layer and the magnetic free layer, a gate electrode provided on the channel via a gate insulation layer, and a multiferroric layer which is provided on the magnetic free layer, and whose magnetization direction is changed by an electric field.

    摘要翻译： 根据本发明的示例的自旋FET包括其磁化方向固定的磁性钉扎层，其磁化方向改变的磁性自由层，磁性被钉扎层和磁性自由层之间的通道，设置在 通过栅极绝缘层的沟道，以及设置在磁性自由层上的磁化方向由电场改变的多层。

    Magneto-resistance effect element and magnetic memory
    34.
    发明申请
    Magneto-resistance effect element and magnetic memory 失效
    磁阻效应元件和磁存储器

    公开(公告)号：US20060227465A1

    公开(公告)日：2006-10-12

    申请号：US11228326

    申请日：2005-09-19

    申请人： Tomoaki Inokuchi ,  Yoshiaki Saito ,  Hideyuki Sugiyama

    发明人： Tomoaki Inokuchi ,  Yoshiaki Saito ,  Hideyuki Sugiyama

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： H01F10/3231 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3281 ,  H01L43/08 ,  H01L43/10

    摘要： It is possible to reduce a current required for spin injection writing. A magneto-resistance effect element includes: a first magnetization pinned layer; a magnetization free layer; a tunnel barrier layer; a second magnetization pinned layer whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization of the first magnetization pinned layer, and; a non-magnetic layer. When the second magnetization pinned layer is made of ferromagnetic material including Co, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Rh, Ag, and Au; when the second magnetization pinned layer is made of ferromagnetic material including Fe, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Rh, Pt, Ir, Al, Ag, and Au; and when the second magnetization pinned layer is made of ferromagnetic material including Ni, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Au, and Ag.

    摘要翻译： 可以减少自旋注入写入所需的电流。 磁阻效应元件包括：第一磁化固定层; 无磁化层; 隧道势垒层; 第二磁化固定层，其磁化方向固定为与第一磁化固定层的磁化方向基本上反平行; 非磁性层。 当第二磁化固定层由包括Co的铁磁材料制成时，非磁性层的材料是包括选自Zr，Hf，Rh，Ag和Au中的至少一种元素的金属; 当第二磁化被钉扎层由包括Fe的铁磁材料制成时，用于非磁性层的材料是包括选自Rh，Pt，Ir，Al，Ag和Au中的至少一种元素的金属; 并且当第二磁化被钉扎层由包括Ni的铁磁材料制成时，用于非磁性层的材料是包括选自Zr，Hf，Au和Ag中的至少一种元素的金属。

    Method for producing magnetic memory device
    35.
    发明授权
    Method for producing magnetic memory device 失效

    公开(公告)号：US07041603B2

    公开(公告)日：2006-05-09

    申请号：US10396435

    申请日：2003-03-26

    申请人： Minoru Amano ,  Tatsuya Kishi ,  Yoshiaki Saito ,  Tomomasa Ueda ,  Hiroaki Yoda

    发明人： Minoru Amano ,  Tatsuya Kishi ,  Yoshiaki Saito ,  Tomomasa Ueda ,  Hiroaki Yoda

    IPC分类号： H01L21/302

    CPC分类号： G11C11/15 ,  Y10T29/49021

    摘要： There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element.

    Magneto-resistance effect element, magnetic memory and magnetic head
    37.
    发明申请
    Magneto-resistance effect element, magnetic memory and magnetic head 有权
    磁阻效应元件，磁记忆体和磁头

    公开(公告)号：US20060034118A1

    公开(公告)日：2006-02-16

    申请号：US11202318

    申请日：2005-08-12

    申请人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi

    发明人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi

    IPC分类号： G11C11/00

    CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3272 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08

    摘要： The magneto-resistance effect element includes: a first ferromagnetic layer serving as a magnetization fixed layer; a magnetization free layer including a second ferromagnetic layer provided on one side of the first ferromagnetic layer, a third ferromagnetic layer which is formed on an opposite side of the second ferromagnetic layer from the first ferromagnetic layer and has a film face having an area larger than that of the second ferromagnetic layer and whose magnetization direction is changeable by an external magnetic field, and an intermediate layer which is provided between the second ferromagnetic layer and the third ferromagnetic layer and which transmits a change of magnetization direction of the third ferromagnetic layer to the second ferromagnetic layer; and a tunnel barrier layer provided between the first ferromagnetic layer and the second ferromagnetic layer.

    摘要翻译： 磁阻效应元件包括：用作磁化固定层的第一铁磁层; 包含设置在第一铁磁层的一侧上的第二铁磁层的无磁化层，第三铁磁层，其形成在第二铁磁层与第一铁磁层相反的一侧上，并具有面积大于 第二铁磁层的磁化方向可由外部磁场变化的中间层，以及设置在第二铁磁层与第三铁磁层之间并将第三铁磁性层的磁化方向的变化向第 第二铁磁层; 以及设置在第一铁磁层和第二铁磁层之间的隧道势垒层。

    Magnetic memory
    40.
    发明授权
    Magnetic memory 失效
    磁记忆

    公开(公告)号：US06934184B2

    公开(公告)日：2005-08-23

    申请号：US10893915

    申请日：2004-07-20

    申请人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

    发明人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

    IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L43/08

    CPC分类号： G11C11/15

    摘要： A highly reliable magnetic memory exhibits enhanced data-holding stability at high storage density in a storage layer of a magnetoresistive effect element used for memory cells. A magnetic memory includes a memory cell array having first wirings, second wirings intersecting the first wirings and memory cells each provided at an intersection area of the corresponding first and second wirings. Each memory cell is selected when the corresponding first and second wirings are selected. Each memory cell includes a magnetoresistive effect element having a storage layer in which data is stored by magnetic fields generated when current flows the selected first and second wirings, a first magnetic member, having two ends, provided as partially surrounding each first wiring and the two ends being situated in a direction of easy axis of magnetization, to form a closed-loop magnetic circuitry with the storage layer, and a second magnetic member, having two ends, provided as partially surrounding each second wiring and the two ends being situated in a direction of hard axis of magnetization, to amplify magnetic fields applied to the storage layer in the direction of hard axis of magnetization. Each end of the first magnetic member is situated as closer than each end of the second magnetic member to the storage layer.

    摘要翻译： 在用于存储单元的磁阻效应元件的存储层中，高度可靠的磁存储器在高存储密度下表现出增强的数据保持稳定性。 磁存储器包括具有第一布线的存储单元阵列，与第一布线相交的第二布线和各自设置在相应的第一布线和第二布线的交叉区域的存储单元。 当选择对应的第一和第二布线时，选择每个存储单元。 每个存储单元包括磁阻效应元件，其具有存储层，其中当电流流过所选择的第一和第二布线时，通过产生的磁场来存储数据;第一磁性构件，具有设置为部分地包围每个第一布线的两端， 端部位于容易的磁化轴的方向上，以形成具有存储层的闭环磁路，以及具有两端的第二磁性构件，其设置为部分地包围每个第二布线，并且两端位于 磁化强度轴的方向，放大沿着硬磁化轴的方向施加到存储层的磁场。 第一磁性构件的每个端部被定位成比第二磁性构件的每个端部更靠近存储层。