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45 条记录 (耗时 0.026 秒)

    MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
    32.
    发明申请
    MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY 审中-公开
    磁记忆元件和磁记忆

    公开(公告)号：US20130099338A1

    公开(公告)日：2013-04-25

    申请号：US13604537

    申请日：2012-09-05

    申请人： Masahiko Nakayama ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Hisanori Aikawa ,  Masaru Toko

    发明人： Masahiko Nakayama ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Hisanori Aikawa ,  Masaru Toko

    IPC分类号： H01L29/82

    CPC分类号： H01S5/065 ,  G01B9/02091 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/303 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01S5/50

    摘要： According to one embodiment, a magnetic memory element includes a memory layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, a first nonmagnetic layer provided on the memory layer, and a reference layer provided on the first nonmagnetic layer, having magnetic anisotropy perpendicular to a film surface, and having an invariable magnetization direction. An area of the memory layer is larger than that of the reference layer. Magnetization in an end portion of the memory layer is smaller than that in a central portion of the memory layer.

    摘要翻译： 根据一个实施例，磁存储元件包括具有垂直于膜表面并具有可变磁化方向的磁各向异性的存储层，设置在存储层上的第一非磁性层和设置在第一非磁性层上的参考层，具有 垂直于膜表面的磁各向异性，并且具有不变的磁化方向。 存储层的面积大于参考层的面积。 存储层的端部的磁化小于存储层的中央部的磁化。

    Magnetic random access memory
    33.
    发明授权
    Magnetic random access memory 失效
    磁性随机存取存储器

    公开(公告)号：US06984865B2

    公开(公告)日：2006-01-10

    申请号：US10847384

    申请日：2004-05-18

    申请人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Yoshiaki Asao ,  Hiroaki Yoda

    发明人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Yoshiaki Asao ,  Hiroaki Yoda

    IPC分类号： H01L29/82

    CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.

    摘要翻译： 关于本发明的实例的磁性随机存取存储器包括磁阻元件，覆盖磁阻元件的侧表面的第一绝缘层，布置在第一绝缘层上并具有第一凹槽的第二绝缘层 磁阻元件，填充第一沟槽并与磁阻元件连接的写入线以及布置在除了第一沟槽的底部之外的第一和第二绝缘层之间的第三绝缘层，并且具有蚀刻选择 至少相对于第一绝缘层和第二绝缘层。

    Magnetic random access memory device having thermal agitation property and high write efficiency
    36.
    发明申请
    Magnetic random access memory device having thermal agitation property and high write efficiency 有权
    具有热搅拌性能和高写入效率的磁性随机存取存储器件

    公开(公告)号：US20050018478A1

    公开(公告)日：2005-01-27

    申请号：US10862617

    申请日：2004-06-08

    申请人： Toshihiko Nagase ,  Hiroaki Yoda ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Tomomasa Ueda

    发明人： Toshihiko Nagase ,  Hiroaki Yoda ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Tomomasa Ueda

    IPC分类号： G06K19/077 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

    CPC分类号： G11C11/16

    摘要： An MTJ element has two magnetic layers and a nonmagnetic layer. The resistance of the MTJ element, which varies depending on whether the two magnetic layers are magnetized parallel or antiparallel. In an MRAM adapted to write data into the MTJ element by causing a write wiring to generate induced magnetic flux and consequently changing the direction of magnetization of the recording layer, the MTJ element is a perpendicular MTJ element in which each of the two magnetic layers is magnetized in a direction perpendicular to its plane. The write wiring is placed in a direction perpendicular to the direction of the thickness of the MTJ element and applies a generated magnetic field to the magnetic layers of the MTJ element in the direction in which they are magnetized. Magnetic yokes hold the MTJ element in the direction of its thickness.

    摘要翻译： MTJ元件具有两个磁性层和一个非磁性层。 MTJ元件的电阻取决于两个磁性层是平行还是反平行磁化而变化。 在适于通过使写入布线产生感应磁通并因此改变记录层的磁化方向将数据写入MTJ元件的MRAM中，MTJ元件是垂直的MTJ元件，其中两个磁性层中的每一个是 在垂直于其平面的方向上磁化。 写入布线沿垂直于MTJ元件的厚度方向的方向放置，并将产生的磁场施加到MTJ元件的被磁化方向上的磁性层。 磁轭将MTJ元件沿其厚度方向固定。

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    37.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
    磁性元件和磁记忆

    公开(公告)号：US20130001714A1

    公开(公告)日：2013-01-03

    申请号：US13424301

    申请日：2012-03-19

    申请人： Katsuya Nishiyama ,  Hisanori Aikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Koji Ueda ,  Hiroaki Yoda

    发明人： Katsuya Nishiyama ,  Hisanori Aikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Koji Ueda ,  Hiroaki Yoda

    IPC分类号： H01L29/82

    CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

    摘要： According to one embodiment, a magnetoresistive element includes a storage layer having a perpendicular and variable magnetization, a reference layer having a perpendicular and invariable magnetization, a shift adjustment layer having a perpendicular and invariable magnetization in a direction opposite to a magnetization of the reference layer, a first nonmagnetic layer between the storage layer and the reference layer, and a second nonmagnetic layer between the reference layer and the shift adjustment layer. A switching magnetic field of the reference layer is equal to or smaller than a switching magnetic field of the storage layer, and a magnetic relaxation constant of the reference layer is larger than a magnetic relaxation constant of the storage layer.

    摘要翻译： 根据一个实施例，磁阻元件包括具有垂直和可变磁化的存储层，具有垂直和不变磁化的参考层，在与参考层的磁化相反的方向上具有垂直和不变磁化的位移调整层 存储层和参考层之间的第一非磁性层，以及参考层和位移调整层之间的第二非磁性层。 参考层的开关磁场等于或小于存储层的切换磁场，并且参考层的磁性松弛常数大于存储层的磁性松弛常数。

    MAGNETORESISTIVE DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
    38.
    发明申请
    MAGNETORESISTIVE DEVICE AND MAGNETIC RANDOM ACCESS MEMORY 有权
    磁性器件和磁性随机存取存储器

    公开(公告)号：US20100238717A1

    公开(公告)日：2010-09-23

    申请号：US12715699

    申请日：2010-03-02

    申请人： Masahiko NAKAYAMA ,  Hiroaki Yoda ,  Tadashi Kai ,  Hisanori Aikawa ,  Katsuya Nishiyama ,  Jyunichi Ozeki

    发明人： Masahiko NAKAYAMA ,  Hiroaki Yoda ,  Tadashi Kai ,  Hisanori Aikawa ,  Katsuya Nishiyama ,  Jyunichi Ozeki

    IPC分类号： G11C11/00 ,  G11B5/33

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C7/04 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/126 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01L43/10

    摘要： A magnetoresistive device includes: a magnetic recording layer including a first magnetic layer having perpendicular magnetic anisotropy, and a second magnetic layer having in-plane magnetic anisotropy and being exchange-coupled to the first magnetic layer, Curie temperature of the second magnetic layer being lower than Curie temperature of the first magnetic layer, and the magnetic recording layer having a magnetization direction perpendicular to a film plane; a magnetic reference layer having a magnetization direction which is perpendicular to a film plane and is invariable; and a nonmagnetic layer provided between the magnetic recording layer and the magnetic reference layer. The magnetization direction of the magnetic recording layer is changeable by spin-polarized electrons caused by flowing current between the magnetic recording layer and the magnetic reference layer in a direction perpendicular to the film plane.

    摘要翻译： 磁阻器件包括：包括具有垂直磁各向异性的第一磁性层的磁记录层和具有面内磁各向异性并与第一磁性层交换耦合的第二磁性层，第二磁性层的居里温度较低 第一磁性层的居里温度，磁化方向垂直于膜面的磁记录层; 具有垂直于膜平面的磁化方向且不变的磁参考层; 以及设置在磁记录层和磁参考层之间的非磁性层。 磁记录层的磁化方向可以由磁记录层和磁参考层之间的流动电流在垂直于膜平面的方向上引起的自旋极化电子改变。

    MAGNETIC MEMORY
    39.
    发明申请
    MAGNETIC MEMORY 失效
    磁记忆

    公开(公告)号：US20080204944A1

    公开(公告)日：2008-08-28

    申请号：US12100969

    申请日：2008-04-10

    申请人： Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao ,  Hiroaki Yoda

    发明人： Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Takeshi Kajiyama ,  Yoshiaki Asao ,  Hiroaki Yoda

    IPC分类号： G11B5/33

    CPC分类号： G11B5/39

    摘要： It is possible to reduce writing current without causing fluctuation of the writing characteristic. A magnetic memory includes: a magnetoresistance effect element having a magnetization pinned layer whose magnetization direction is pinned, a storage layer whose magnetization direction is changeable, and a non-magnetic layer provided between the magnetization pinned layer and the storage layer; and a first wiring layer which is electrically connected to the magnetoresistance effect element and extends in a direction substantially perpendicular to a direction of an easy magnetization axis of the storage layer, an end face of the magnetoresistance effect element substantially perpendicular to the direction of the easy magnetization axis of the storage layer and an end face of the first wiring layer substantially perpendicular to the direction of the easy magnetization axis being positioned on the same plane.

    摘要翻译： 可以减小写入电流而不引起写入特性的波动。 磁存储器包括：磁阻效应元件，具有其磁化方向被钉扎的磁化钉扎层，其磁化方向可变的存储层和设置在磁化钉扎层与存储层之间的非磁性层; 以及第一布线层，其电连接到所述磁阻效应元件并且沿着与所述存储层的容易磁化轴方向大致垂直的方向延伸，所述磁阻效应元件的端面基本上垂直于所述容易的方向 存储层的磁化轴和基本上垂直于易磁化轴的方向的第一布线层的端面位于同一平面上。