公开(公告)号：US20050031967A1

公开(公告)日：2005-02-10

申请号：US10725570

申请日：2003-12-03

申请人： Hitoshi Ito

发明人： Hitoshi Ito

IPC分类号： G03C5/00 ,  G03F1/54 ,  G03F1/56 ,  G03F7/16 ,  G03F7/20 ,  G03F9/00 ,  G03G16/00 ,  H01L21/00 ,  H01L21/027

CPC分类号： G03F1/70

摘要： A photomask includes a transparent substrate; a first mask pattern disposed on a first region of the transparent substrate; a second mask pattern disposed on a second region different from the first region of the transparent substrate; and a transparent film provided on the first mask pattern, having an optical thickness configured to make a focal position of the first mask pattern deeper than a focal position of the second mask pattern.

摘要翻译： 光掩模包括透明基板; 设置在所述透明基板的第一区域上的第一掩模图案; 第二掩模图案，设置在与透明基板的第一区域不同的第二区域上; 以及设置在第一掩模图案上的透明膜，其具有被配置为使第一掩模图案的焦点位置比第二掩模图案的焦点位置更深的光学厚度。

公开(公告)号：USD466872S1

公开(公告)日：2002-12-10

申请号：US29144457

申请日：2001-07-05

申请人： Shigeo Matsumoto ,  Yasushi Fujita ,  Hitoshi Ito ,  Yuji Himeno

设计人： Shigeo Matsumoto ,  Yasushi Fujita ,  Hitoshi Ito ,  Yuji Himeno

公开(公告)号：US5949234A

公开(公告)日：1999-09-07

申请号：US588550

申请日：1996-01-18

申请人： Osamu Takano ,  Hitoshi Ito

发明人： Osamu Takano ,  Hitoshi Ito

IPC分类号： A63F7/02 ,  G01R27/26 ,  G01V3/08 ,  G01R29/12

CPC分类号： G01V3/088

摘要： An electrostatic sensor comprises a ground electrode defining an enclosure having a through-hole for permitting the passage of a body therethrough. A sensor electrode is disposed in the ground electrode. A detecting circuit is disposed in the ground electrode for detecting the passage of the body through the through-hole on the basis of a change in an electrostatic capacitance between the ground electrode and the sensor electrode.

摘要翻译： 静电传感器包括限定具有用于允许身体通过的通孔的外壳的接地电极。 传感器电极设置在接地电极中。 检测电路设置在接地电极中，用于基于接地电极和传感器电极之间的静电电容的变化来检测身体通过通孔的通路。

公开(公告)号：US4699801A

公开(公告)日：1987-10-13

申请号：US832875

申请日：1986-02-26

申请人： Hitoshi Ito ,  Takahiko Moriya

发明人： Hitoshi Ito ,  Takahiko Moriya

IPC分类号： H01L21/268 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  B05D3/06

CPC分类号： H01L21/76879 ,  H01L21/2686 ,  H01L21/28562 ,  H01L21/32051

摘要： A semiconductor device is produced in such a manner that light having a wavelength in a range of 400 to 1000 nm is irradiated on a substrate so as to excite bonding hand of a material gas into a vibrating condition, and a thin film is formed on the substrate in accordance with a chemical vapor deposition method.

摘要翻译： 以这样的方式制造半导体器件，即将具有400至1000nm范围内的波长的光照射在基板上，以将材料气体的接合手激发到振动状态，并且在 基板，按照化学气相沉积法。

公开(公告)号：US08105938B2

公开(公告)日：2012-01-31

申请号：US12471771

申请日：2009-05-26

申请人： Hitoshi Ito

发明人： Hitoshi Ito

IPC分类号： H01L21/4763 ,  H01L21/768

CPC分类号： H05K3/465 ,  H01L2924/3011 ,  H05K3/0023 ,  H05K3/0035 ,  H05K3/045 ,  H05K2201/09563 ,  H05K2203/054 ,  H05K2203/072 ,  H05K2203/0723

摘要： There is provided a method of manufacturing a semiconductor substrate. The method includes: (a) forming a wiring pattern on a substrate; (b) covering the wiring pattern with an insulating resin, thereby forming a first insulating layer; (c) forming a second insulating layer on the first insulating layer; (d) forming a plurality of grooves through the second insulating layer; (e) forming at least one via hole through the first and second insulating layers by irradiating at least one of the grooves with a laser beam; (f) forming a seed metal layer on an inner surface of the at least one via hole, inner surfaces of the grooves, and a surface of the second insulating layer; and (g) forming a plating layer in the at least one via hole and the grooves, by an electrolytic plating using the seed metal layer as a power feeding layer.

摘要翻译： 提供一种制造半导体衬底的方法。 该方法包括：（a）在基板上形成布线图案; （b）用绝缘树脂覆盖布线图形，从而形成第一绝缘层; （c）在所述第一绝缘层上形成第二绝缘层; （d）通过所述第二绝缘层形成多个槽; （e）通过用激光束照射所述凹槽中的至少一个来形成穿过所述第一和第二绝缘层的至少一个通孔; （f）在所述至少一个通孔的内表面，所述槽的内表面和所述第二绝缘层的表面上形成种子金属层; 以及（g）通过使用所述种子金属层作为供电层的电解电镀在所述至少一个通孔和所述沟槽中形成镀层。

公开(公告)号：US20090294979A1

公开(公告)日：2009-12-03

申请号：US12471771

申请日：2009-05-26

申请人： Hitoshi Ito

发明人： Hitoshi Ito

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H05K3/465 ,  H01L2924/3011 ,  H05K3/0023 ,  H05K3/0035 ,  H05K3/045 ,  H05K2201/09563 ,  H05K2203/054 ,  H05K2203/072 ,  H05K2203/0723

摘要： There is provided a method of manufacturing a semiconductor substrate. The method includes: (a) forming a wiring pattern on a substrate; (b) covering the wiring pattern with an insulating resin, thereby forming a first insulating layer; (c) forming a second insulating layer on the first insulating layer; (d) forming a plurality of grooves through the second insulating layer; (e) forming at least one via hole through the first and second insulating layers by irradiating at least one of the grooves with a laser beam; (f) forming a seed metal layer on an inner surface of the at least one via hole, inner surfaces of the grooves, and a surface of the second insulating layer; and (g) forming a plating layer in the at least one via hole and the grooves, by an electrolytic plating using the seed metal layer as a power feeding layer.

摘要翻译： 提供一种制造半导体衬底的方法。 该方法包括：（a）在基板上形成布线图案; （b）用绝缘树脂覆盖布线图形，从而形成第一绝缘层; （c）在所述第一绝缘层上形成第二绝缘层; （d）通过所述第二绝缘层形成多个槽; （e）通过用激光束照射所述凹槽中的至少一个来形成穿过所述第一和第二绝缘层的至少一个通孔; （f）在所述至少一个通孔的内表面，所述槽的内表面和所述第二绝缘层的表面上形成种子金属层; 以及（g）通过使用所述种子金属层作为供电层的电解电镀在所述至少一个通孔和所述沟槽中形成镀层。

公开(公告)号：US07394120B2

公开(公告)日：2008-07-01

申请号：US11146029

申请日：2005-06-07

申请人： Hiroyuki Yamasaki ,  Hitoshi Ito

发明人： Hiroyuki Yamasaki ,  Hitoshi Ito

IPC分类号： H01L29/78

CPC分类号： H01L29/4238 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/7834

摘要： An MIS transistor includes a gate electrode located to intersect a device region of a semiconductor substrate isolated by a device isolation region, and source and drain regions formed in the semiconductor substrate at both sides of the gate electrode region and elevated source and drain located above the source and drain regions. A gate length of the gate electrode at a boundary between the device isolation region and the device region is longer than the gate length at a central portion of the device region.

摘要翻译： MIS晶体管包括位于与器件隔离区隔离的半导体衬底的器件区域相交的栅电极，以及形成在栅电极区两侧的半导体衬底中的源区和漏区以及位于 源极和漏极区域。 在器件隔离区域和器件区域之间的边界处的栅电极的栅极长度大于器件区域的中心部分处的栅极长度。

公开(公告)号：US20070092776A1

公开(公告)日：2007-04-26

申请号：US10579632

申请日：2004-11-17

申请人： Eiichi Akiyama ,  Hitoshi Ito ,  Hiroshi Yokota

发明人： Eiichi Akiyama ,  Hitoshi Ito ,  Hiroshi Yokota

IPC分类号： H01M8/10 ,  C08J5/22 ,  H01M10/40

CPC分类号： B01D71/70 ,  B01D67/0006 ,  B01D67/0009 ,  B01D71/82 ,  B01D2325/26 ,  B01D2325/42 ,  C08J5/2256 ,  C08J2383/04 ,  H01M6/181 ,  H01M8/1027 ,  H01M8/1037 ,  H01M8/1072 ,  H01M10/052 ,  H01M10/0565 ,  H01M2300/0082 ,  H01M2300/0091 ,  Y02P70/56

摘要： Problems of the invention are to provide an organic-silica complex-type electrolyte membrane which is expected to show electrolyte properties such as sufficient ion conductivity to be used in an electrochemical device, to have sufficient thermal resistance and mechanical strength in accordance with applications, to contain no halogen element which exerts a large environmental load, to be capable of being produced at low cost and, further, in view of being used in the electrochemical device, to suppress swelling even when impregnated with water, alcohol, a non-protonic polar solvent, an auxiliary electrolyte solution or the like, and, accordingly, to be excellent in a joining property and adhesiveness against an electrode, a method for producing the electrolyte membrane and the electrochemical device using the electrolyte membrane. To solve the problems, a production method for an organic-silica complex membrane having a sulfonic acid group which is characterized by having the steps of obtaining a sulfonic acid derivative by allowing an alkoxysilane compound having an amino group to react with a cyclic sultone and subjecting the sulfonic acid derivative to a condensation reaction is used.

摘要翻译： 本发明的问题是提供一种有机 - 二氧化硅复合型电解质膜，其期望显示出电化学装置中使用的足够的离子传导性的电解质性能，以具有足够的热阻和机械强度 不含有施加环境负荷的卤素元素，能够以低成本制造，另外，考虑到用于电化学装置，即使浸渍水，醇，非质子极性也能抑制溶胀 溶剂，辅助电解质溶液等，从而具有优异的接合性和对电极的粘合性，电解质膜的制造方法和使用电解质膜的电化学装置。 为了解决上述问题，提出了具有磺酸基的有机 - 二氧化硅复合膜的制造方法，其特征在于，通过使具有氨基的烷氧基硅烷化合物与环状磺内酯反应而获得磺酸衍生物的工序， 使用磺酸衍生物进行缩合反应。

公开(公告)号：US20060013574A1

公开(公告)日：2006-01-19

申请号：US11230264

申请日：2005-09-19

申请人： Hitoshi Ito ,  Eiichi Torigoe ,  Mitsugu Nakamura

发明人： Hitoshi Ito ,  Eiichi Torigoe ,  Mitsugu Nakamura

IPC分类号： F24H1/10 ,  H05B3/78

CPC分类号： B60H1/2225 ,  F24H3/0405 ,  F24H3/0429 ,  F24H3/0435 ,  F24H9/1872

摘要： An electrical heater includes plural heating body plates arranged in parallel with each other to define an air passage between adjacent two thereof, a positive electrode member joined to one end side of each heating body plate, and a negative electrode member joined to the other end side of each heating body plate. In the electrical heater, the heating body plates are arranged to directly heat air passing through the air passage when electrical power is supplied to the heating body plates through the electrode members. Accordingly, the electrical heater can effectively heat air with a simple structure.

摘要翻译： 电加热器包括彼此平行布置的多个加热体板，以在其相邻的两个之间形成空气通道，连接到每个加热体板的一端侧的正极部件和连接到另一端侧的负极部件 的每个加热体板。 在电加热器中，当通过电极部件向加热体板供电时，加热体板被布置成直接加热通过空气通道的空气。 因此，电加热器可以以简单的结构有效地加热空气。

公开(公告)号：US20050048717A1

公开(公告)日：2005-03-03

申请号：US10959661

申请日：2004-10-07

申请人： Eiji Ito ,  Hitoshi Ito

发明人： Eiji Ito ,  Hitoshi Ito

IPC分类号： H01L21/02 ,  H01L21/8242 ,  H01L27/02 ,  H01L27/108

CPC分类号： H01L27/10852 ,  H01L27/0207 ,  H01L28/91

摘要： A semiconductor memory incorporates cylinder-type stacked capacitors. Each capacitor has a lower electrode and an upper electrode facing each other via a dielectric film. The lower electrode of each capacitor is supported by a beam-like insulator at a side portion of the electrode, the side portion being apart from a lower edge of the lower electrode.

摘要翻译： 半导体存储器包括圆柱型叠层电容器。 每个电容器具有通过电介质膜彼此相对的下电极和上电极。 每个电容器的下电极在电极的侧部由束状绝缘体支撑，该侧部分与下电极的下边缘分开。