公开(公告)号：US08207529B2

公开(公告)日：2012-06-26

申请号：US12856854

申请日：2010-08-16

申请人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park

发明人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park

IPC分类号： H01L51/00

CPC分类号： H01L51/052 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0004 ,  H01L51/0541 ,  H01L51/0545

摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; a hydrophobic layer which covers the source and drain electrodes or insulating layer and has an opening that defines a region corresponding to the organic semiconductor layer; and a hydrophilic layer formed in the opening of the hydrophobic layer, wherein the organic semiconductor layer is formed on the hydrophilic layer. The thin film transistor includes the organic semiconductor layer having a highly precise pattern that is formed without an additional patterning process.

摘要翻译： 薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 覆盖源极和漏极或绝缘层并具有限定对应于有机半导体层的区域的开口的疏水层; 以及形成在疏水层的开口中的亲水层，其中在亲水层上形成有机半导体层。 该薄膜晶体管包括具有高精度图案的有机半导体层，该图案形成为没有附加的图案化工艺。

公开(公告)号：US20100308317A1

公开(公告)日：2010-12-09

申请号：US12856854

申请日：2010-08-16

申请人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park

发明人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park

IPC分类号： H01L51/10

CPC分类号： H01L51/052 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0004 ,  H01L51/0541 ,  H01L51/0545

摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; a hydrophobic layer which covers the source and drain electrodes or insulating layer and has an opening that defines a region corresponding to the organic semiconductor layer; and a hydrophilic layer formed in the opening of the hydrophobic layer, wherein the organic semiconductor layer is formed on the hydrophilic layer. The thin film transistor includes the organic semiconductor layer having a highly precise pattern that is formed without an additional patterning process.

摘要翻译： 薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 覆盖源极和漏极或绝缘层并具有限定对应于有机半导体层的区域的开口的疏水层; 以及形成在疏水层的开口中的亲水层，其中在亲水层上形成有机半导体层。 该薄膜晶体管包括具有高精度图案的有机半导体层，该图案形成为没有附加的图案化工艺。

公开(公告)号：US20100151622A1

公开(公告)日：2010-06-17

申请号：US12706836

申请日：2010-02-17

申请人： Min-Chul SUH ,  Taek Ahn ,  Jin-Seong Park

发明人： Min-Chul SUH ,  Taek Ahn ,  Jin-Seong Park

IPC分类号： H01L51/40

CPC分类号： H01L51/0545 ,  B82Y10/00 ,  B82Y30/00 ,  H01L27/3274 ,  H01L51/0012 ,  H01L51/0541 ,  H01L51/105

摘要： An organic thin film transistor that can reduce contact resistance between source and drain electrodes and an organic semiconductor layer and can be readily manufactured, a flat panel display apparatus utilizing the organic thin film transistor, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a substrate; a source electrode and a drain electrode disposed on the gate insulating film; a conductive polymer layer disposed to cover at least a portion of each of source and drain electrodes; a hydrophobic material layer disposed on the substrate and the source and drain electrodes except regions where the conductive polymer layer are formed; an organic semiconductor layer electrically connected to the source and drain electrodes; a gate insulating film disposed to cover the organic semiconductor layer; and a gate electrode disposed on the gate insulating film.

摘要翻译： 一种能够降低源极和漏极之间的接触电阻以及有机半导体层并且可以容易地制造的有机薄膜晶体管，利用有机薄膜晶体管的平板显示装置和制造有机薄膜晶体管的方法。 有机薄膜晶体管包括：基板; 设置在栅极绝缘膜上的源电极和漏电极; 导电聚合物层，设置成覆盖源电极和漏电极中的每一个的至少一部分; 设置在基板上的疏水性材料层以及除了形成导电性聚合物层的区域之外的源极和漏极电极; 电连接到源极和漏极的有机半导体层; 设置为覆盖有机半导体层的栅极绝缘膜; 以及设置在栅极绝缘膜上的栅电极。

公开(公告)号：US07719496B2

公开(公告)日：2010-05-18

申请号：US11282633

申请日：2005-11-21

申请人： Taek Ahn ,  Min-Chul Suh ,  Jae-Bon Koo ,  Jin-Seong Park

发明人： Taek Ahn ,  Min-Chul Suh ,  Jae-Bon Koo ,  Jin-Seong Park

IPC分类号： G09G3/32

CPC分类号： B82Y30/00 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/0078 ,  H01L51/0516 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

摘要： An organic thin film transistor that has good adhesiveness and good contact resistance as well as allows ohmic contact between an organic semiconductor layer and a source electrode and a drain electrode, and its manufacturing method. There is also provided a flat panel display device using the organic thin film transistor. The organic thin film transistor includes a source electrode, a drain electrode, an organic semiconductor layer, a gate insulating layer, and a gate electrode formed on a substrate, and a carrier relay layer including conductive polymer material formed at least between the organic semiconductor layer and the source electrode or the organic semiconductor layer and the drain electrode.

摘要翻译： 具有良好的粘合性和良好的接触电阻以及有机半导体层与源电极和漏电极之间的欧姆接触的有机薄膜晶体管及其制造方法。 还提供了使用有机薄膜晶体管的平板显示装置。 有机薄膜晶体管包括在基板上形成的源电极，漏电极，有机半导体层，栅极绝缘层和栅电极，以及载体中继层，其至少形成在有机半导体层 和源电极或有机半导体层和漏电极。

公开(公告)号：US07601567B2

公开(公告)日：2009-10-13

申请号：US11637997

申请日：2006-12-12

申请人： Min-Chul Suh ,  Taek Ahn ,  Jin-Seong Park

发明人： Min-Chul Suh ,  Taek Ahn ,  Jin-Seong Park

IPC分类号： H01L21/00

CPC分类号： H01L51/0002 ,  H01L51/0541 ,  H01L51/0558 ,  H01L2251/5338

摘要： A method of forming an organic thin film transistor is disclosed. The method includes forming source and drain electrodes on a substrate; forming an insulating layer covering the source and drain electrodes; first surface-treating the insulating layer so that the insulating layer has a hydrophobic surface; forming an opening that exposes facing portions of the source and drain electrodes in the first surface-treated insulating layer; forming an organic semiconductor layer and a gate insulating layer in the opening; second surface-treating the first surface-treated insulating layer so that the insulating layer has a hydrophilic surface; and forming a gate electrode overlapping at least a portion of the source and drain electrodes, an organic thin film transistor, and a flat panel display device including the organic thin film transistor. According to the method of preparing an organic thin film transistor as described above, at least one of an organic semiconductor layer and a gate insulating layer can be easily formed. When the organic thin film transistor is formed in an array form with respect to a capacitor, the organic thin film transistor has a substantially low parasitic capacitance and the capacitor has a high capacitance.

摘要翻译： 公开了一种形成有机薄膜晶体管的方法。 该方法包括在衬底上形成源电极和漏电极; 形成覆盖源极和漏极的绝缘层; 首先对所述绝缘层进行表面处理，使得所述绝缘层具有疏水性表面; 形成在所述第一表面处理绝缘层中露出所述源极和漏极的相对部分的开口; 在开口中形成有机半导体层和栅极绝缘层; 对所述第一表面处理绝缘层进行表面处理，以使所述绝缘层具有亲水性表面; 以及形成与所述源极和漏极的至少一部分重叠的栅电极，有机薄膜晶体管和包括所述有机薄膜晶体管的平板显示装置。 根据如上所述制备有机薄膜晶体管的方法，可以容易地形成有机半导体层和栅极绝缘层中的至少一个。 当有机薄膜晶体管相对于电容器形成阵列形式时，有机薄膜晶体管具有大大低的寄生电容，并且电容器具有高电容。

公开(公告)号：US07595504B2

公开(公告)日：2009-09-29

申请号：US12047654

申请日：2008-03-13

申请人： Taek Ahn ,  Min-Chul Suh ,  Jin-Saong Park ,  Seok-Jong Lee ,  Jung-Han Shin

发明人： Taek Ahn ,  Min-Chul Suh ,  Jin-Saong Park ,  Seok-Jong Lee ,  Jung-Han Shin

IPC分类号： H01L29/08

CPC分类号： H01L51/0533 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L51/0545

摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.

公开(公告)号：US07485507B2

公开(公告)日：2009-02-03

申请号：US11150179

申请日：2005-06-13

申请人： Taek Ahn ,  Jae-Bon Koo ,  Min-Chul Suh

发明人： Taek Ahn ,  Jae-Bon Koo ,  Min-Chul Suh

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L51/0541 ,  H01L27/3244

摘要： The present invention relates to an organic thin film transistor (OTFT), a method of fabricating the OTFT, and an organic electroluminescent display that has the OTFTs. The invention prevents surface damage of an organic semiconductor layer and reduces an off-current. The OTFT includes a substrate, a source electrode and a drain electrode formed on the substrate, and a semiconductor layer formed on the substrate that has a channel layer disposed over and between the source electrode and drain electrode. In addition, the OTFT includes a gate insulating layer formed on the semiconductor layer, a separation pattern formed through the semiconductor layer and the gate insulating layer to separate the channel layer, and a gate electrode formed on the gate insulating layer over the channel layer.

摘要翻译： 本发明涉及有机薄膜晶体管（OTFT），制造OTFT的方法以及具有OTFT的有机电致发光显示器。 本发明可防止有机半导体层的表面损伤并减少断流。 OTFT包括形成在基板上的基板，源电极和漏电极，以及形成在基板上的半导体层，该半导体层具有设置在源电极和漏电极之间和之间的沟道层。 此外，OTFT包括形成在半导体层上的栅极绝缘层，通过半导体层形成的分离图案和用于分离沟道层的栅极绝缘层，以及在沟道层上形成在栅极绝缘层上的栅电极。

公开(公告)号：US20070099356A1

公开(公告)日：2007-05-03

申请号：US11588362

申请日：2006-10-27

申请人： Jin-Seong Park ,  Taek Ahn ,  Min-Chul Suh

发明人： Jin-Seong Park ,  Taek Ahn ,  Min-Chul Suh

IPC分类号： H01L21/84 ,  H01L21/00 ,  G02F1/1335

CPC分类号： H01L51/5237 ,  H01L51/5253 ,  H01L2251/5315

摘要： A flat panel display device of which a display unit is efficiently sealed and which has good flexibility, and a method of manufacturing the flat panel display. The flat panel display device includes a substrate, a display unit formed on the substrate, and a sealing part formed so as to cover the display unit using an atomic layer deposition (ALD) method.

摘要翻译： 显示单元被有效地密封并且具有良好的柔性的平板显示装置以及制造平板显示器的方法。 平板显示装置包括基板，形成在基板上的显示单元和形成为使用原子层沉积（ALD）方法覆盖显示单元的密封部。

公开(公告)号：US20070090349A1

公开(公告)日：2007-04-26

申请号：US11546342

申请日：2006-10-12

申请人： Min-Chul Suh ,  Taek Ahn ,  Jin-Seong Park

发明人： Min-Chul Suh ,  Taek Ahn ,  Jin-Seong Park

IPC分类号： H01L29/08 ,  H01L29/76 ,  H01L21/00 ,  H01L35/24 ,  H01L29/10 ,  H01L51/00 ,  H01L31/036 ,  H01L31/112

CPC分类号： H01L51/0545 ,  B82Y10/00 ,  B82Y30/00 ,  H01L27/3274 ,  H01L51/0012 ,  H01L51/0541 ,  H01L51/105

摘要： An organic thin film transistor that can reduce contact resistance between source and drain electrodes and an organic semiconductor layer and can be readily manufactured, a flat panel display apparatus utilizing the organic thin film transistor, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a substrate; a source electrode and a drain electrode disposed on the gate insulating film; a conductive polymer layer disposed to cover at least a portion of each of source and drain electrodes; a hydrophobic material layer disposed on the substrate and the source and drain electrodes except regions where the conductive polymer layer are formed; an organic semiconductor layer electrically connected to the source and drain electrodes; a gate insulating film disposed to cover the organic semiconductor layer; and a gate electrode disposed on the gate insulating film.

摘要翻译： 一种能够降低源极和漏极之间的接触电阻以及有机半导体层并且可以容易地制造的有机薄膜晶体管，利用有机薄膜晶体管的平板显示装置和制造有机薄膜晶体管的方法。 有机薄膜晶体管包括：基板; 设置在栅极绝缘膜上的源电极和漏电极; 导电聚合物层，设置成覆盖源电极和漏电极中的每一个的至少一部分; 设置在基板上的疏水性材料层以及除了形成导电性聚合物层的区域之外的源极和漏极电极; 电连接到源极和漏极的有机半导体层; 设置为覆盖有机半导体层的栅极绝缘膜; 以及设置在栅极绝缘膜上的栅电极。

公开(公告)号：US20070040169A1

公开(公告)日：2007-02-22

申请号：US11505912

申请日：2006-08-18

申请人： Sung Kim ,  Taek Ahn ,  Min-Chul Suh ,  Sin-Doo Lee

发明人： Sung Kim ,  Taek Ahn ,  Min-Chul Suh ,  Sin-Doo Lee

IPC分类号： H01L29/08

CPC分类号： H01L51/0004 ,  H01L21/268 ,  H01L51/0545

摘要： An organic thin film transistor includes a substrate, a gate electrode, a gate insulating layer, a first electrode, and a second electrode disposed on the substrate, a first layer disposed on the substrate, the first layer being photosensitive, a second layer disposed on the first layer, the second layer being hydrophobic, an opening defined in the first and second layers, the opening corresponding to the gate electrode, and a hydrophilic organic semiconductor disposed in the opening.

摘要翻译： 有机薄膜晶体管包括基板，栅电极，栅极绝缘层，第一电极和设置在基板上的第二电极，设置在基板上的第一层，第一层是感光的，第二层设置在 第一层，第二层是疏水性的，限定在第一层和第二层中的开口，对应于栅电极的开口和设置在开口中的亲水性有机半导体。