公开(公告)号：US20190140314A1

公开(公告)日：2019-05-09

申请号：US16239645

申请日：2019-01-04

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Futoshi UTSUNO ,  Kota TERAI ,  Takashi UMEKI ,  Masaru NAKAGAWA ,  Hiroshi YAMAGUCHI

IPC: H01M10/0562 ,  H01M10/0525 ,  H01M4/136 ,  H01M10/058

CPC classification number: H01M10/0562 ,  H01B1/10 ,  H01M4/136 ,  H01M4/5815 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/058 ,  H01M2300/0068

Abstract: A sulfide solid electrolyte that contains lithium, phosphorus, sulfur, chlorine and bromine, wherein in powder X-ray diffraction analysis using CuKα rays, it has a diffraction peak A at 2θ=25.2±0.5 deg and a diffraction peak B at 2θ=29.7±0.5 deg, the diffraction peak A and the diffraction peak B satisfy the following formula (A), and a molar ratio of the chlorine to the phosphorus “c (Cl/P)” and a molar ratio of the bromine to the phosphorus “d (Br/P)” satisfies the following formula (1): 1.2

公开(公告)号：US20180219098A1

公开(公告)日：2018-08-02

申请号：US15748356

申请日：2016-07-29

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Kazuyoshi INOUE ,  Futoshi UTSUNO ,  Yuki TSURUMA ,  Shigekazu TOMAI ,  Kazuaki EBATA

IPC: H01L29/786 ,  C01G15/00 ,  C23C14/08 ,  C23C14/34 ,  C23C14/58 ,  C30B1/02 ,  C30B29/16 ,  H01L29/24 ,  H01L29/04 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7869 ,  C01G15/00 ,  C01P2002/54 ,  C01P2002/70 ,  C01P2004/61 ,  C01P2006/40 ,  C23C14/08 ,  C23C14/086 ,  C23C14/34 ,  C23C14/5806 ,  C30B1/023 ,  C30B29/16 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02631 ,  H01L21/02667 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969

Abstract: A crystalline oxide semiconductor thin film that is composed mainly of indium oxide and comprises surface crystal grains having a single crystal orientation.

公开(公告)号：US20180069262A1

公开(公告)日：2018-03-08

申请号：US15672462

申请日：2017-08-09

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Futoshi UTSUNO ,  Kota TERAI

IPC: H01M10/0562 ,  H01M10/0525 ,  H01M4/36

CPC classification number: H01M10/0562 ,  H01M4/36 ,  H01M4/62 ,  H01M10/0525 ,  H01M2300/0065 ,  H01M2300/0068

Abstract: Aimed at providing a sulfide solid electrolyte comprising an argyrodite type crystal structure, having a high ionic conductivity due to presence of a large amount of a halogen element and is capable of suppressing agglomeration at the time of production. Provided is a sulfide solid electrolyte comprising lithium, phosphorus, sulfur and one or more elements X selected from halogen elements, wherein the sulfide solid electrolyte comprises an argyrodite type crystal structure, and wherein a molar ratio of the lithium to the phosphorus “a (Li/P)”, a molar ratio of the sulfur to the phosphorus “b (S/P)” and a molar ratio of the element X to the phosphorus “c (X/P)” satisfy the following formulas (1) to (3): 5.05≦a 0 and c>0.

公开(公告)号：US20140001040A1

公开(公告)日：2014-01-02

申请号：US14018606

申请日：2013-09-05

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Kazuyoshi INOUE ,  Koki YANO ,  Futoshi UTSUNO

IPC: C23C14/08

CPC classification number: H01J37/3429 ,  C01G15/00 ,  C04B35/01 ,  C04B35/453 ,  C04B35/6261 ,  C04B35/62625 ,  C04B35/62655 ,  C04B35/64 ,  C04B2235/3229 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3293 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/6585 ,  C04B2235/6586 ,  C04B2235/725 ,  C04B2235/77 ,  C04B2235/80 ,  C23C14/086 ,  C23C14/3414 ,  H01J2237/332 ,  H01L21/02565 ,  H01L21/02631

Abstract: A sputtering target containing oxides of indium (In), gallium (Ga) and zinc (Zn), which includes a compound shown by ZnGa2O4 and a compound shown by InGaZnO4.

Abstract translation: 包含铟（In），镓（Ga）和锌（Zn）的氧化物的溅射靶，其包含ZnGa 2 O 4所示的化合物和InGaZnO 4所示的化合物。

公开(公告)号：US20130285053A1

公开(公告)日：2013-10-31

申请号：US13926402

申请日：2013-06-25

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Hirokazu KAWASHIMA ,  Koki YANO ,  Futoshi UTSUNO ,  Kazuyoshi INOUE

IPC: H01L21/02 ,  H01L29/786

CPC classification number: H01L21/02565 ,  C04B35/01 ,  C04B35/453 ,  C04B35/6262 ,  C04B35/62655 ,  C04B35/62695 ,  C04B37/026 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3293 ,  C04B2235/40 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/6027 ,  C04B2235/652 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6581 ,  C04B2235/6586 ,  C04B2235/661 ,  C04B2235/76 ,  C04B2235/761 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/963 ,  C04B2235/9661 ,  C04B2237/12 ,  C04B2237/34 ,  C04B2237/407 ,  C23C14/086 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/7869 ,  Y10T428/31507

Abstract: Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a film. Also disclosed is an oxide for a sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target). Further disclosed is an oxide sintered compact that has a bixbyite structure and contains indium oxide, gallium oxide, and zinc oxide. The composition amounts (atomic %) of indium (In), gallium (Ga), and zinc (Zn) fall within a composition range satisfying the following formula: In/(In+Ga+Zn)

Abstract translation: 公开了一种溅射靶，其可以通过溅射法抑制氧化物半导体膜形成中的异常放电的发生，并且可以连续且稳定地形成膜。 还公开了具有稀土氧化物C型晶体结构并具有没有白点的表面（在溅射靶的表面上形成的凹凸等差的外观）的溅射靶的氧化物。 进一步公开了具有双相结构并含有氧化铟，氧化镓和氧化锌的氧化物烧结体。 铟（In），镓（Ga）和锌（Zn）的组成量（原子％）落在满足下式的组成范围内：In /（In + Ga + Zn）<0.75