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公开(公告)号：US20220122842A1
公开(公告)日：2022-04-21
申请号：US17563968
申请日：2021-12-28
Applicant: Intel Corporation
Inventor： Khaled Ahmed , Anup Pancholi , John Heck , Thomas Sounart , Harel Frish , Sansaptak Dasgupta
IPC: H01L21/02 , H01L21/8234 , H01L21/8222
Abstract: A device includes a layer including a first III-Nitride (III-N) material, a channel layer including a second III-N material, a release layer including nitrogen and a transition metal, where the release layer is between the first III-N material and the second III-N material. The device further includes a polarization layer including a third III-N material above the release layer, a gate structure above the polarization layer, a source structure and a drain structure on opposite sides of the gate structure where the source structure and the drain structure each include a fourth III-N material. The device further includes a source contact on the source structure and a drain contact on the drain structure.
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公开(公告)号：US20210375620A1
公开(公告)日：2021-12-02
申请号：US16890937
申请日：2020-06-02
Applicant: Intel Corporation
Inventor： Khaled Ahmed , Anup Pancholi , John Heck , Thomas Sounart , Harel Frish , Sansaptak Dasgupta
IPC: H01L21/02 , H01L21/8222 , H01L21/8234
Abstract: A device includes a layer including a first III-Nitride (III-N) material, a channel layer including a second III-N material, a release layer including nitrogen and a transition metal, where the release layer is between the first III-N material and the second III-N material. The device further includes a polarization layer including a third III-N material above the release layer, a gate structure above the polarization layer, a source structure and a drain structure on opposite sides of the gate structure where the source structure and the drain structure each include a fourth III-N material. The device further includes a source contact on the source structure and a drain contact on the drain structure.
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公开(公告)号：US11175451B2
公开(公告)日：2021-11-16
申请号：US16733167
申请日：2020-01-02
Applicant: Intel Corporation
Inventor： Hasitha Jayatilleka , Harel Frish , Ranjeet Kumar , Haisheng Rong , John Heck
Abstract: Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a waveguide disposed above a substrate. The waveguide has a first section including amorphous silicon with a first refractive index, and a second section including crystalline silicon with a second refractive index different from the first refractive index. The semiconductor photonic device further includes a heat element at a vicinity of the first section of the waveguide. The heat element is arranged to generate heat to transform the amorphous silicon of the first section of the waveguide to partially or completely crystallized crystalline silicon with a third refractive index. The amorphous silicon in the first section may be formed with silicon lattice defects caused by an element implanted into the first section. Other embodiments may also be described and claimed.
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公开(公告)号：US20200150344A1
公开(公告)日：2020-05-14
申请号：US16733167
申请日：2020-01-02
Applicant: Intel Corporation
Inventor： Hasitha Jayatilleka , Harel Frish , Ranjeet Kumar , Haisheng Rong , John Heck
IPC: G02B6/122
Abstract: Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a waveguide disposed above a substrate. The waveguide has a first section including amorphous silicon with a first refractive index, and a second section including crystalline silicon with a second refractive index different from the first refractive index. The semiconductor photonic device further includes a heat element at a vicinity of the first section of the waveguide. The heat element is arranged to generate heat to transform the amorphous silicon of the first section of the waveguide to partially or completely crystallized crystalline silicon with a third refractive index. The amorphous silicon in the first section may be formed with silicon lattice defects caused by an element implanted into the first section. Other embodiments may also be described and claimed.
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公开(公告)号：US20190339466A1
公开(公告)日：2019-11-07
申请号：US16517159
申请日：2019-07-19
Applicant: Intel Corporation
Inventor： John Heck , Harel Frish , Reece DeFrees , George A. Ghiurcan , Hari Mahalingam , Pegah Seddighian
IPC: G02B6/42
Abstract: Embodiments of the present disclosure are directed toward techniques and configurations for an optical coupler including an optical waveguide to guide light to an optical fiber. In embodiments, the optical waveguide includes a tapered segment to propagate the received light to the optical fiber. In embodiments, the tapered segment is buried below a surface of a semiconductor substrate to transition the received light within the semiconductor substrate from a first optical mode to a second optical mode to reduce a loss of light during propagation of the received light from the optical waveguide to the optical fiber. In embodiments, the surface of the semiconductor substrate comprises a bottom planar surface of a silicon photonic chip that includes at least one or more of passive or active photonic components. Other embodiments may be described and/or claimed.
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Patent Agency Ranking
公开(公告)号：US09239340B2
公开(公告)日：2016-01-19
申请号：US14106245
申请日：2013-12-13
Applicant: Intel Corporation
Inventor： David N. Hutchison , John Heck
IPC: G01C19/72 , G01P15/093 , G01P15/14
CPC classification number: G01P15/093 , G01C19/5712 , G01C19/5733 , G01C19/5776 , G01P15/14 , G01P2015/0828 , G01P2015/084
Abstract: Embodiments of the present disclosure are directed towards techniques and configurations for a MEMS device configured to determine inertial change applied to the device. In one instance, the device may comprise a laser arrangement configured to generate a light beam having a resonant wavelength, a waveguide configured to receive and output the light beam, and an optical resonator comprising a deformable closed loop and optically coupled to the waveguide to receive a portion of the light beam. A deformation of the optical resonator may result in a change of an optical path length of a portion of the light beam traveling through the optical resonator, causing a change in the resonant wavelength of the light beam outputted by the waveguide. Other embodiments may be described and/or claimed.
Abstract translation: 本公开的实施例针对被配置为确定施加到该装置的惯性变化的MEMS装置的技术和配置。 在一个实例中，该装置可以包括被配置为产生具有谐振波长的光束的激光装置，被配置为接收和输出光束的波导，以及包括可变形闭环的光学谐振器，并且光耦合到波导以接收 一部分光束。 光谐振器的变形可能导致光通过光谐振器的光束的一部分的光程长度的变化，导致波导输出的光束的谐振波长的变化。 可以描述和/或要求保护其他实施例。
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公开(公告)号：US20150185377A1
公开(公告)日：2015-07-02
申请号：US14635912
申请日：2015-03-02
Applicant: Intel Corporation
Inventor： Yun-Chung Na , John Heck , Haisheng Rong
CPC classification number: G02B5/1857 , G02B5/1842 , G02B5/1861 , G02B6/02009
Abstract: Methods of forming microelectronic structures are described. Embodiments of those methods may include forming a photomask on a (110) silicon wafer substrate, wherein the photomask comprises a periodic array of parallelogram openings, and then performing a timed wet etch on the (110) silicon wafer substrate to form a diffraction grating structure that is etched into the (110) silicon wafer substrate.
Abstract translation: 描述形成微电子结构的方法。 这些方法的实施例可以包括在（110）硅晶片衬底上形成光掩模，其中光掩模包括平行四边形开口的周期性阵列，然后在（110）硅晶片衬底上执行定时湿蚀刻以形成衍射光栅结构 被蚀刻到（110）硅晶片衬底中。
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公开(公告)号：US20240388366A1
公开(公告)日：2024-11-21
申请号：US18787886
申请日：2024-07-29
Applicant: Intel Corporation
Inventor： Meer Nazmus Sakib , Peicheng Liao , Ranjeet Kumar , Duanni Huang , Haisheng Rong , Harel Frish , John Heck , Chaoxuan Ma , Hao Li , Ganesh Balamurugan
IPC: H04B10/61
Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to coherent optical receivers, including coherent receivers with integrated all-silicon waveguide photodetectors and tunable local oscillators implemented within CMOS technology. Embodiments are also directed to tunable silicon hybrid lasers with integrated temperature sensors to control wavelength. Embodiments are also directed to post-process phase correction of optical hybrid and nested I/Q modulators. Embodiments are also directed to demultiplexing photodetectors based on multiple microrings. In embodiments, all components may be implements on a silicon substrate. Other embodiments may be described and/or claimed.
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公开(公告)号：US20230075255A1
公开(公告)日：2023-03-09
申请号：US17467747
申请日：2021-09-07
Applicant: Intel Corporation
Inventor： John Heck , Paul B. Fischer
Abstract: Described herein are IC devices that include hybrid lasers formed with a bonding layer. Hybrid lasers include an active light-emitting region coupled to a waveguide. In a hybrid laser, the waveguide and the light-emitting regions are formed separately from different materials, e.g., the waveguide is a single-crystal silicon, and the light-emitting region includes III-V semiconductors. An amorphous group IV material, such as silicon or germanium, is advantageously used to bond the light-emitting region to the waveguide.
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公开(公告)号：US11211245B2
公开(公告)日：2021-12-28
申请号：US16890937
申请日：2020-06-02
Applicant: Intel Corporation
Inventor： Khaled Ahmed , Anup Pancholi , John Heck , Thomas Sounart , Harel Frish , Sansaptak Dasgupta
IPC: H01L21/00 , H01L21/02 , H01L21/8234 , H01L21/8222
Abstract: A device includes a layer including a first III-Nitride (III-N) material, a channel layer including a second III-N material, a release layer including nitrogen and a transition metal, where the release layer is between the first III-N material and the second III-N material. The device further includes a polarization layer including a third III-N material above the release layer, a gate structure above the polarization layer, a source structure and a drain structure on opposite sides of the gate structure where the source structure and the drain structure each include a fourth III-N material. The device further includes a source contact on the source structure and a drain contact on the drain structure.
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