公开(公告)号：US20190042928A1

公开(公告)日：2019-02-07

申请号：US16147109

申请日：2018-09-28

Applicant: Intel Corporation

Inventor： Ian A. YOUNG ,  Ram KRISHNAMURTHY ,  Sasikanth MANIPATRUNI ,  Gregory K. CHEN ,  Amrita MATHURIYA ,  Abhishek SHARMA ,  Raghavan KUMAR ,  Phil KNAG ,  Huseyin Ekin SUMBUL

IPC: G06N3/063 ,  H03M7/30 ,  G11C5/06 ,  G11C11/419

Abstract: An apparatus is described. The apparatus includes a compute in memory circuit. The compute in memory circuit includes a memory circuit and an encoder. The memory circuit is to provide 2m voltage levels on a read data line where m is greater than 1. The memory circuit includes storage cells sufficient to store a number of bits n where n is greater than m. The encoder is to receive an m bit input and convert the m bit input into an n bit word that is to be stored in the memory circuit, where, the m bit to n bit encoding performed by the encoder creates greater separation between those of the voltage levels that demonstrate wider voltage distributions on the read data line than others of the voltage levels.

公开(公告)号：US20170243917A1

公开(公告)日：2017-08-24

申请号：US15523324

申请日：2014-12-26

Applicant: Intel Corporation

Inventor： Sasikanth MANIPATRUNI ,  Dmitri E. NIKONOV ,  Ian A. YOUNG

IPC: H01L27/22 ,  H03K19/173 ,  H03K19/18

CPC classification number: H01L27/22 ,  H01L27/228 ,  H01L43/08 ,  H03K19/173 ,  H03K19/18

Abstract: An apparatus including a spin to charge conversion node; and a charge to spin conversion node, wherein an input to the spin to charge conversion node produces an output at the charge to spin conversion node. An apparatus including a magnet including an input node and output node, the input node including a capacitor operable to generate magnetic response in the magnet and the output node including at least one spin to charge conversion material. A method including injecting a spin current from a first magnet; converting the spin current into a charge current operable to produce a magnetoelectric interaction with a second magnet; and changing a direction of magnetization of the second magnet in response to the magnetoelectric interaction. A method including injecting a spin current from an input node of a magnet; and converting the spin current into a charge current at an output node of the magnet.

公开(公告)号：US20170069831A1

公开(公告)日：2017-03-09

申请号：US15119380

申请日：2014-03-25

Applicant: Intel Corporation

Inventor： Dmitri E. NIKONOV ,  Sasikanth MANIPATRUNI ,  Ian A. Young

IPC: H01L43/08 ,  H01L43/10

CPC classification number: H01L43/08 ,  H01L43/10 ,  H03K19/18 ,  H03K19/23

Abstract: Described is an apparatus which comprises: first, second, and third free magnetic layers; a first metal layer of first material coupled to the first and third free magnetic layers; and a second metal layer of second material different from the first material, the second metal layer coupled to the second and third free magnetic layers. Described is an STT majority gate device which comprises: a free magnetic layer in a ring; and first, second, third, and fourth free magnetic layers coupled to the free magnetic layer.

Abstract translation: 描述了一种装置，其包括：第一，第二和第三自由磁性层; 耦合到所述第一和第三自由磁性层的第一材料的第一金属层; 以及与第一材料不同的第二材料的第二金属层，第二金属层耦合到第二和第三自由磁性层。 描述的是STT多数门装置，其包括：环中的自由磁性层; 以及耦合到自由磁性层的第一，第二，第三和第四自由磁性层。