摘要:
Embodiments include techniques for static random access memory (SRAM) bitline equalization using phase change material (PCM). The techniques include detecting a defect in SRAM bitlines, and programming a variable resistance PCM cell to offset the detected defect. The techniques also include measuring signal development time for the SRAM bitlines, and adjusting the programming of the variable resistance PCM cell based at least in part on the measured signal development for the SRAM bitlines.
摘要:
A method, system, and/or computer program product corrects a data error that has been caused by a break in a conductor link in a memory. A memory controller detects a line malfunction in a data bit transmission line between a first bit node and a second bit node in a memory, and then identifies a constant voltage state at the second bit node that is caused by the line malfunction. In response to determining that the constant voltage state is non-representative of the bit value intended to be transmitted from the first bit node to the second bit node, an inversion logic inverts bit values for all bits in an original bit array to create an inverted bit array, which is stored in the array of memory cells for future retrieval and re-inversion, in order to reconstruct the original bit array.
摘要:
An aspect includes identifying a repaired memory array element in a memory array, and identifying memory array elements in the memory array that are adjacent to the repaired memory array element. A group that includes the repaired and adjacent memory array elements is formed and monitored for error conditions. It is determined whether a number of the error conditions exceeds a threshold. A repair action is performed to the memory array based on determining that the number of error conditions exceeds the threshold.
摘要:
An integrated circuit is configured to detect current leakage that results from electromigration in the integrated circuit. An isolation power switch selectively connects a target voltage rail in the integrated circuit to a power source. A voltage memory stores a record of an initial voltage decay rate for the target voltage rail while isolated from a manufacturer's power source. A voltage record comparator logic compares the initial voltage decay rate to a field voltage decay rate for the target voltage rail when isolated from a field power source. An output device indicates that a difference between the initial voltage decay rate and the field voltage decay rate for the target voltage rail exceeds a predefined limit, where the difference is a result of current leakage caused by electromigration in the integrated circuit.
摘要:
A method detects and mitigates harm caused by electromagnetic interference (EMI) to digital transmissions within an electronic circuit. One or more processors check for an initial transmission error during an initial digital transmission between a digital transmitter and a digital receiver on an electronic circuit. In response to detecting the initial transmission error, the processor(s) receive electromagnetic interference (EMI) detection signals from one or more EMI detectors. In response to determining that the EMI detection signals represent an EMI level that exceeds a predetermined value, the processor(s) identify an EMI anomaly source on the electronic circuit and adjusts the EMI anomaly source until the EMI level has been reduced to a nominal level. A copy of the initial digital transmission is then resent from the digital transmitter to the digital receiver. If no transmission error reoccurs, then the EMI anomaly source is kept in the adjusted state.
摘要:
A method, system and memory controller are provided for implementing simultaneous read and write operations in a memory subsystem utilizing a dual port Dynamic Random Access Memory (DRAM) configuration. A DRAM includes a first partition and a second partition. A memory controller determines if memory requirements are above or below a usage threshold. If the memory requirements are below the usage threshold, the memory is partitioned into a read buffer and a write buffer, with writes going to the write buffer and reads coming from the read buffer, data being transferred from the write buffer to the read buffer through an Error Correction Code (ECC) engine. If the memory requirements are above the usage threshold, the entire memory is used for reads and writes.
摘要:
A method and apparatus for refreshing a row of a memory device prior to a scheduled refresh. A memory array may include a plurality of memory cells. The memory array may be configured to be refreshed at a first refresh time interval. The memory device may also include an intermediate refresh circuit. The intermediate refresh circuit may be configured to detect a triggering event and request a refresh for a row of the memory array in response to detecting a triggering event.
摘要:
A method, system and computer program product are provided for implementing enhanced reliability of memory subsystems utilizing a dual port Dynamic Random Access Memory (DRAM) configuration. The DRAM configuration includes a first buffer and a second buffer, each buffer including a validity counter. The validity counter for a receiving buffer is incremented as each respective data row from a transferring buffer is validated through Error Correction Code (ECC), Reliability, Availability, and Serviceability (RAS) logic and transferred to the receiving buffer, while the validity counter for the transferring buffer is decremented. Data are read from or written to either the first buffer or the second buffer based upon a respective count value of the validity counters.
摘要:
A method, system and computer program product are provided for implementing enhanced reliability of memory subsystems utilizing a dual port Dynamic Random Access Memory (DRAM) configuration. The DRAM configuration includes a first buffer and a second buffer, each buffer including a validity counter. The validity counter for a receiving buffer is incremented as each respective data row from a transferring buffer is validated through Error Correction Code (ECC), Reliability, Availability, and Serviceability (RAS) logic and transferred to the receiving buffer, while the validity counter for the transferring buffer is decremented. Data are read from or written to either the first buffer or the second buffer based upon a respective count value of the validity counters.
摘要:
Exemplary embodiments of the present invention disclose a method and system for monitoring a first Error Correcting Code (ECC) device for failure and replacing the first ECC device with a second ECC device if the first ECC device begins to fail or fails. In a step, an exemplary embodiment performs a loopback test on an ECC device if a specified number of correctable errors is exceeded or if an uncorrectable error occurs. In another step, an exemplary embodiment replaces an ECC device that fails the loopback test with an ECC device that passes a loopback test.