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公开(公告)号：US10984948B2
公开(公告)日：2021-04-20
申请号：US15801926
申请日：2017-11-02
IPC分类号： H01F41/04 , H01F41/02 , H01F27/32 , H01F5/00 , H01F27/29 , H01F27/02 , H01F27/34 , H01F27/255 , H01F27/28 , H01F3/08 , H01F1/00 , H01F1/09
摘要： A method for forming an inductor device. The method comprises forming a trench within a central core region of a conductive coil formed within a dielectric material. The method further comprises forming a composite region within the trench. The composite region including a polymer matrix having a plurality of particles with magnetic properties dispersed therein with the central core region to reduce eddy current loss and increase energy storage.
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公开(公告)号：US10763038B2
公开(公告)日：2020-09-01
申请号：US14950364
申请日：2015-11-24
发明人： Hariklia Deligianni , William J. Gallagher , Sathana Kitayaporn , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Joonah Yoon
摘要： A technique relates to a method of forming a laminated multilayer magnetic structure. An adhesion layer is deposited on a substrate. A magnetic seed layer is deposited on top of the adhesion layer. Magnetic layers and non-magnetic spacer layers are alternatingly deposited such that an even number of the magnetic layers is deposited while an odd number of the non-magnetic spacer layers is deposited. The odd number is one less than the even number. Every two of the magnetic layers is separated by one of the non-magnetic spacer layers. The first of the magnetic layers is deposited on the magnetic seed layer, and the magnetic layers each have a thickness less than 500 nanometers.
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公开(公告)号：US10597769B2
公开(公告)日：2020-03-24
申请号：US15479615
申请日：2017-04-05
IPC分类号： H01F7/06 , C23C14/06 , C23C16/06 , C23C14/14 , C23C16/40 , C23C14/10 , H01F41/04 , H01F17/00 , C23C16/34
摘要： Embodiments are directed to a method of forming a magnetic stack arrangement of a laminated magnetic inductor having a high frequency peak quality factor (Q). A first magnetic stack is formed having one or more magnetic layers alternating with one or more insulating layers in a first inner region of a laminated magnetic inductor. A second magnetic stack is formed opposite a surface of the first magnetic stack in an outer region of the laminated magnetic inductor. A third magnetic stack is formed opposite a surface of the second magnetic stack in a second inner region of the laminated magnetic inductor. The insulating layers are formed such that a thickness of an insulating layer in the second magnetic stack is greater than a thickness of an insulating layer in the first magnetic stack.
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公开(公告)号：US10593449B2
公开(公告)日：2020-03-17
申请号：US15473725
申请日：2017-03-30
摘要： Embodiments are directed to a method of forming a laminated magnetic inductor and resulting structures having multiple magnetic layer thicknesses. A first magnetic stack having one or more magnetic layers alternating with one or more insulating layers is formed in a first inner region of the laminated magnetic inductor. A second magnetic stack is formed opposite a major surface of the first magnetic stack in an outer region of the laminated magnetic inductor. A third magnetic stack is formed opposite a major surface of the second magnetic stack in a second inner region of the laminated magnetic inductor. The magnetic layers are formed such that a thickness of a magnetic layer in each of the first and third magnetic stacks is less than a thickness of a magnetic layer in the second magnetic stack.
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公开(公告)号：US10573444B2
公开(公告)日：2020-02-25
申请号：US16365781
申请日：2019-03-27
摘要： A magnetic laminating structure and process for preventing substrate bowing include multiple film stack segments that include a first magnetic layer, at least one additional magnetic layer, and a dielectric spacer disposed between the first and at least one additional magnetic layers. A dielectric isolation layer is intermediate magnetic layers and on the sidewalls thereof. The magnetic layers are characterized by defined tensile strength and the multiple segments function to relive the stress as the magnetic laminating structure is formed, wherein the cumulative thickness of the magnetic layers is greater than 1 micron. Also described are methods for forming the magnetic laminating structure.
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公开(公告)号：US20200003727A1
公开(公告)日：2020-01-02
申请号：US16539332
申请日：2019-08-13
发明人： Bruce B. Doris , Eugene J. O'Sullivan , Sufi Zafar
IPC分类号： G01N27/414
摘要： Embodiments of the invention include a method of using a sensor. The method includes accessing a sample and exposing the sample to the sensor. The sensor includes a sensing circuit having with a field effect transistor (FET) having a gate structure. A cavity is formed in a fill material that is over the gate structure. A probe of the sensor is within a portion of the cavity. An upper region of the probe is above a top surface of the fill material, and a lower region of the probe is below the top surface of the fill material. The probe structure includes a 3D sensing surface structure, and a liner is formed on the 3D sensing surface and configured to function as a recognition element. A portion of the liner is on the lower region of the probe and positioned between sidewalls of the cavity and the 3D sensing surface.
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公开(公告)号：US10475496B1
公开(公告)日：2019-11-12
申请号：US15971331
申请日：2018-05-04
IPC分类号： H01L27/00 , G11C11/02 , G11C11/16 , H01L43/02 , H01L43/12 , H01L27/22 , H01L43/10 , B82Y25/00
摘要： A technique relates to a magnetic device. A stack is formed including a magnetic tunnel junction (MTJ), the MTJ including a reference magnetic layer and a free magnetic layer sandwiching a tunnel barrier layer. A protective film is formed on a bottom portion of the MTJ such that an upper portion of the MTJ is exposed. A cleaning is performed on the upper portion of the MTJ that is exposed such that any residual material is removed.
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公开(公告)号：US10373747B2
公开(公告)日：2019-08-06
申请号：US15403292
申请日：2017-01-11
摘要： A magnetic laminating inductor structure and process for preventing substrate bowing and damping losses generally include a laminated film stack including a magnetic layer having a tensile stress, an insulating layer having a compressive stress disposed on the magnetic layer, and a dielectric planarizing layer on the insulating layer. The dielectric planarizing layer has a neutral stress and a roughness value less than the insulating layer. The reduction in surface roughness reduces damping losses and the compressive stress of the insulating layers reduces wafer bowing.
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公开(公告)号：US20190221346A1
公开(公告)日：2019-07-18
申请号：US16365781
申请日：2019-03-27
摘要： A magnetic laminating structure and process for preventing substrate bowing include multiple film stack segments that include a first magnetic layer, at least one additional magnetic layer, and a dielectric spacer disposed between the first and at least one additional magnetic layers. A dielectric isolation layer is intermediate magnetic layers and on the sidewalls thereof. The magnetic layers are characterized by defined tensile strength and the multiple segments function to relive the stress as the magnetic laminating structure is formed, wherein the cumulative thickness of the magnetic layers is greater than 1 micron. Also described are methods for forming the magnetic laminating structure.
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公开(公告)号：US20180308897A1
公开(公告)日：2018-10-25
申请号：US16021195
申请日：2018-06-28
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08 , H01L45/06
摘要： A semiconductor structure. The semiconductor structure includes two or more pillar structures disposed over a top surface of a substrate. The semiconductor structure further includes two or more contacts to the two or more pillar structures. The semiconductor structure further includes an insulator disposed between the two or more pillar structures and the two or more contacts. The two or more contacts are self-aligned to the two or more pillar structures.
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