公开(公告)号：US06544869B1

公开(公告)日：2003-04-08

申请号：US09884133

申请日：2001-06-20

申请人： Kenji Harafuji ,  Akihiko Ishibashi ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

发明人： Kenji Harafuji ,  Akihiko Ishibashi ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

IPC分类号： H01L2120

CPC分类号： C23C16/45582 ,  C23C16/52 ,  C30B25/14 ,  Y10T117/10

摘要： A method for depositing a semiconductor film on a wafer by making a source gas supplied flow almost horizontally to the surface of the wafer. When a process condition, e.g., the flow velocity or pressure of the source gas, should be changed, the source gas has its velocity and/or pressure changed so that the source gas is supplied at a substantially constant flow rate.

公开(公告)号：US4843031A

公开(公告)日：1989-06-27

申请号：US168256

申请日：1988-03-15

申请人： Yuzaburo Ban ,  Hiraaki Tsujii ,  Youichi Sasai ,  Mototsugu Ogura ,  Hiroyuki Serizawa

发明人： Yuzaburo Ban ,  Hiraaki Tsujii ,  Youichi Sasai ,  Mototsugu Ogura ,  Hiroyuki Serizawa

IPC分类号： H01L33/00 ,  H01S5/20 ,  H01S5/40

CPC分类号： H01S5/4031 ,  H01L33/0062 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/4087 ,  Y10S148/029 ,  Y10S148/048 ,  Y10S148/071 ,  Y10S148/094 ,  Y10S438/925 ,  Y10S438/956

摘要： Disclosed is a method of fabricating a compound semiconductor device which is capable of forming a multi-wavelength semiconductor laser structure, double cavity type semiconductor laser structure, stripe type semiconductor laser structure transverse junction stripe type semiconductor laser structure, or semiconductor grating by a single step of epitaxial growth while illuminating a desired part of substrate surface selectively with light at the time of epitaxial growth.

摘要翻译： 公开了一种制造能够通过单步形成多波长半导体激光器结构，双腔型半导体激光器结构，条形半导体激光器结构横向连接条型半导体激光器结构或半导体光栅的化合物半导体器件的方法 的外延生长，同时在外延生长时用光选择性地照射所需部分的衬底表面。

公开(公告)号：US5299218A

公开(公告)日：1994-03-29

申请号：US914078

申请日：1992-07-16

申请人： Yuzaburo Ban ,  Touru Saitoh ,  Tadasi Narusawa ,  Kiyoshi Ohnaka

发明人： Yuzaburo Ban ,  Touru Saitoh ,  Tadasi Narusawa ,  Kiyoshi Ohnaka

IPC分类号： H01S3/16 ,  H01J21/10 ,  H01S3/06 ,  H01S3/0959 ,  H01S5/00 ,  H01S5/04 ,  H01S3/19

CPC分类号： H01S5/04 ,  H01J21/105

摘要： A multi-tip semiconductor laser comprises: a substrate; a cladding layer; an active layer formed of alkali-halide crystal on the cladding layer; at least a field emission tip formed on a surface of the substrate to have a substantially corn shape, the field emission tip being so arranged to confront the active layer; a vacuum space structure for providing a space between substrate and the cladding layer with the field emission tip confronting the active layer and for maintaining the space in a vacuum state; and an electrode structure for a producing electrostatic field between the field emission tip and the same in response to an external voltage supply such that the field emission tip emits an electron beam toward the active layer. The active layer may be doped and be made of organic crystal. It may further comprises a conducting layer covering at least a portion of said active layer. The active layer may be formed in a channel formed in the anode layer. The active layer may be formed in a capillary buried in a channel formed in the anode layer. This multi-tip semiconductor laser emits blue laser light.

摘要翻译： 多尖端半导体激光器包括：基板; 包层; 在包层上形成由碱卤化物晶体形成的活性层; 至少形成在所述基板的表面上以具有大致玉米形状的场致发射尖端，所述场发射尖端被布置为面对所述有源层; 真空空间结构，用于在衬底和包层之间提供与活性层相对的场发射尖端并用于将空间保持在真空状态的空间; 以及用于响应于外部电压供应而在场发射尖端与其之间产生静电场的电极结构，使得场发射尖端朝向有源层发射电子束。 有源层可以掺杂并由有机晶体制成。 它还可以包括覆盖所述有源层的至少一部分的导电层。 有源层可以形成在形成在阳极层中的沟道中。 活性层可以形成在掩埋在阳极层中形成的沟道中的毛细管中。 该多尖端半导体激光器发射蓝色激光。

公开(公告)号：US06734530B2

公开(公告)日：2004-05-11

申请号：US10162211

申请日：2002-06-05

申请人： Yuzaburo Ban

发明人： Yuzaburo Ban

IPC分类号： H01L2904

CPC分类号： H01L33/32 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/16 ,  H01S5/3202 ,  H01S5/32341

摘要： A GaN-based compound semiconductor epi-wafer includes: a substrate 11 made of a first nitride semiconductor belonging to a hexagonal system; and an element layer 12 for forming a semiconductor element, which is made of a second nitride semiconductor belonging to the hexagonal system and which is grown on a principal surface of the substrate 11. An orientation of the principal surface of the substrate 11 has an off-angle in a predetermined direction with respect to a (0001) plane, and the element layer 12 has a surface morphology of a stripe pattern extending substantially in parallel to the predetermined direction.

摘要翻译： GaN基化合物半导体外延片包括：由属于六方晶系的第一氮化物半导体制成的衬底11; 以及用于形成半导体元件的元件层12，其由属于六方晶系的第二氮化物半导体制成并且在基板11的主表面上生长。基板11的主表面的取向截止 相对于（0001）面在预定方向上弯曲，并且元件层12具有基本上平行于预定方向延伸的条纹图案的表面形态。

公开(公告)号：US4885260A

公开(公告)日：1989-12-05

申请号：US156525

申请日：1988-02-16

申请人： Yuzaburo Ban ,  Masaya Manno ,  Minoru Kubo ,  Mototsugu Morisaki ,  Mototsugu Ogura

发明人： Yuzaburo Ban ,  Masaya Manno ,  Minoru Kubo ,  Mototsugu Morisaki ,  Mototsugu Ogura

IPC分类号： H01L21/20 ,  H01L21/205

CPC分类号： H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S117/904 ,  Y10S148/048 ,  Y10S148/065 ,  Y10S148/072 ,  Y10S148/094 ,  Y10S438/925 ,  Y10S438/936

摘要： Disclosed is a vapor phase growth method of compound semiconductor in which source gases are introduced into an epitaxial growth reactor at fixed feed rates, the substrate surface is irradiated with light, and the light irradiation is turned on and off, or the intensity of light irradiation is increased or decreased, so that an epitaxial layer structure changes in the composition, and the carrier concentration and conductivity type abruptly or continuously change in the growth film in the direction of the thickness.

摘要翻译： 公开了一种化合物半导体的气相生长方法，其中源气体以固定的进料速率被引入外延生长反应器中，基板表面被光照射，并且光照射被打开和关闭，或者光照射强度 增加或减少，使得外延层结构改变组成，并且载流子浓度和导电类型在生长膜中在厚度方向上突然或连续地变化。