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44 条记录 (耗时 0.044 秒)

    Multi-tip semiconductor laser
    1.
    发明授权
    Multi-tip semiconductor laser 失效
    多尖端半导体激光器

    公开(公告)号：US5299218A

    公开(公告)日：1994-03-29

    申请号：US914078

    申请日：1992-07-16

    申请人： Yuzaburo Ban ,  Touru Saitoh ,  Tadasi Narusawa ,  Kiyoshi Ohnaka

    发明人： Yuzaburo Ban ,  Touru Saitoh ,  Tadasi Narusawa ,  Kiyoshi Ohnaka

    IPC分类号： H01S3/16 ,  H01J21/10 ,  H01S3/06 ,  H01S3/0959 ,  H01S5/00 ,  H01S5/04 ,  H01S3/19

    CPC分类号： H01S5/04 ,  H01J21/105

    摘要： A multi-tip semiconductor laser comprises: a substrate; a cladding layer; an active layer formed of alkali-halide crystal on the cladding layer; at least a field emission tip formed on a surface of the substrate to have a substantially corn shape, the field emission tip being so arranged to confront the active layer; a vacuum space structure for providing a space between substrate and the cladding layer with the field emission tip confronting the active layer and for maintaining the space in a vacuum state; and an electrode structure for a producing electrostatic field between the field emission tip and the same in response to an external voltage supply such that the field emission tip emits an electron beam toward the active layer. The active layer may be doped and be made of organic crystal. It may further comprises a conducting layer covering at least a portion of said active layer. The active layer may be formed in a channel formed in the anode layer. The active layer may be formed in a capillary buried in a channel formed in the anode layer. This multi-tip semiconductor laser emits blue laser light.

    摘要翻译： 多尖端半导体激光器包括：基板; 包层; 在包层上形成由碱卤化物晶体形成的活性层; 至少形成在所述基板的表面上以具有大致玉米形状的场致发射尖端，所述场发射尖端被布置为面对所述有源层; 真空空间结构，用于在衬底和包层之间提供与活性层相对的场发射尖端并用于将空间保持在真空状态的空间; 以及用于响应于外部电压供应而在场发射尖端与其之间产生静电场的电极结构，使得场发射尖端朝向有源层发射电子束。 有源层可以掺杂并由有机晶体制成。 它还可以包括覆盖所述有源层的至少一部分的导电层。 有源层可以形成在形成在阳极层中的沟道中。 活性层可以形成在掩埋在阳极层中形成的沟道中的毛细管中。 该多尖端半导体激光器发射蓝色激光。

    Semiconductor laser and manufacturing method thereof
    10.
    发明授权
    Semiconductor laser and manufacturing method thereof 失效
    半导体激光器及其制造方法

    公开(公告)号：US5144633A

    公开(公告)日：1992-09-01

    申请号：US704969

    申请日：1991-05-23

    申请人： Kiyoshi Ohnaka ,  Yuzaburo Ban ,  Isao Kidoguchi

    发明人： Kiyoshi Ohnaka ,  Yuzaburo Ban ,  Isao Kidoguchi

    IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323

    CPC分类号： H01S5/2231 ,  H01S5/2059 ,  H01S5/2205 ,  H01S5/32325

    摘要： A hetero structure semiconductor laser of inner stripe type comprises an (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P first cladding layer of a first conductivity type, a Ga.sub.0.5 In.sub.0.5 P or (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P active layer, an (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P second cladding layer of a second conductivity type different from the first conductivity type, an AlInP or (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P confinement layer or a SiO.sub.2 having a stripe-like opening and having a refractive index lower than that of the first cladding layer, and an upper cladding layer having a band gap larger than that of the first cladding layer having a refractive index lower than that of the second cladding layer are formed successively on a GaAs substrate. Further, the width of the active layer may be narrowed as a stripe-like structure. Thus, astigmatism of a semiconductor laser becomes smaller and the threshold value of laser action becomes smaller. The manufacturing methods of such a semiconductor laser are also disclosed.

    摘要翻译： 内条型的异质结构半导体激光器包括第一导电类型的（Al x Ga 1-x）0.5 In 0.5 P第一包层，Ga 0.5 In 0.5 P或（Al x Ga 1-x）0.5 In 0.5 P活性层，（ Al x Ga 1-x）0.5 In 0.5 P第二导电类型的不同于第一导电类型的第二包层，AlInP或（Al x Ga 1-x）0.5 In 0.5 P限制层或具有条状开口并具有折射率 指数低于第一包覆层的折射率，并且在GaAs衬底上依次形成具有比第二包覆层的折射率低的第一包层的带隙大的带隙的上包层。 此外，活性层的宽度可以变窄为条状结构。 因此，半导体激光器的像散变小，激光作用的阈值变小。 还公开了这种半导体激光器的制造方法。