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59 条记录 (耗时 0.028 秒)

    Magnetic recording head with integrated magnetoresistive element and open yoke
    31.
    发明授权
    Magnetic recording head with integrated magnetoresistive element and open yoke 失效
    磁性录音头与集成磁性元件和开放的YOKE

    公开(公告)号：US5164869A

    公开(公告)日：1992-11-17

    申请号：US661797

    申请日：1991-02-27

    申请人： Robert E. Fontana, Jr. ,  Lubomyr T. Romankiw ,  Mason L. Williams, III

    发明人： Robert E. Fontana, Jr. ,  Lubomyr T. Romankiw ,  Mason L. Williams, III

    IPC分类号： G11B5/31 ,  G11B5/39

    CPC分类号： G11B5/3967

    摘要： An integrated inductive write, magnetoresistive (MR) read thin film magnetic head comprising an open magnetic yoke having outside legs each having a winding thereon and a central leg having an opening across which the MR element is coupled. The outer legs are overlapped at one end to form confronting pole pieces having a transducing gap between the pole pieces, and the central leg is positioned between the pole pieces at one end and joined with the outer legs at the other end to form a symmetrical magnetic yoke structure. The windings are wound in a direction so that the flux produced by equally energizing the windings is equal and opposite in each of the outside legs, is additive at the transducing gap between the pole pieces, and produces no net flux through the central leg.

    Magnetoresistive read transducer
    32.
    发明授权
    Magnetoresistive read transducer 失效
    磁阻读取传感器

    公开(公告)号：US4879619A

    公开(公告)日：1989-11-07

    申请号：US173956

    申请日：1988-03-28

    申请人： Robert E. Fontana, Jr. ,  James K. Howard ,  James H. Lee ,  Haralambos Lefakis

    发明人： Robert E. Fontana, Jr. ,  James K. Howard ,  James H. Lee ,  Haralambos Lefakis

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3903

    摘要： A magnetoresistive (MR) read transducer comprising a thin film MR layer formed of ferromagnetic material and a nonmagnetic thin film spacer layer in contact with the MR layer. The spacer layer comprises a material selected from the group consisting of nichrome and nichrome with chromium oxide. A thin film of soft magnetic material is deposited in contact with the spacer layer so that a transverse bias is produced in at least a part of the MR layer. A feature of the invention is that the resistivity of the spacer layer can be chosen by selected the ration of nichrome to chromium oxide in the spacer layer. In a specific embodiment the spacer layer extends over only the central region of the MR layer. In case the MR layer is a nickel based alloy, a wet chemical etching process using an etchant comprising an aqueous solution of ceric ammonium nitrate and acetic acid can be used pattern the spacer layer.

    Method of fabricating magnetic bubble memory device having planar overlay pattern of magnetically soft material
    33.
    发明授权
    Method of fabricating magnetic bubble memory device having planar overlay pattern of magnetically soft material 失效
    制造具有磁性软材料的平面重叠图案的磁性气泡存储装置的方法

    公开(公告)号：US4299680A

    公开(公告)日：1981-11-10

    申请号：US108888

    申请日：1979-12-31

    申请人： Robert E. Fontana, Jr. ,  David C. Bullock ,  Shalendra K. Singh ,  John M. Bush

    发明人： Robert E. Fontana, Jr. ,  David C. Bullock ,  Shalendra K. Singh ,  John M. Bush

    IPC分类号： G11C11/14 ,  G11C19/08 ,  H01F10/08 ,  H01F41/34 ,  H01L21/302 ,  H01L21/3065 ,  C23C15/00 ,  C23F1/02

    CPC分类号： H01F41/34

    摘要： Method of fabricating a magnetic bubble memory device in which the magnetizable upper overlay pattern of magnetically soft material, e.g. permalloy, defining bubble propagation elements and bubble function-determining components as located above a bubble-supporting magnetic film is disposed in a wholly planar configuration to avoid bubble propagation anomalies encountered with typical non-planar overlay patterns of magnetically soft material. The fabrication method provides for the consecutive deposition onto a substrate having a magnetic film capable of supporting magnetic bubbles of a layer of non-magnetic electrically conductive material, a layer of insulating material, and a layer of magnetically soft material, such as permalloy. Patterning of the layers then proceeds from the uppermost layer downwardly in stages to form magnetically soft components defining the elements of magnetic bubble propagation paths and magnetic bubble function-determining components as a planar upper overlay pattern from the layer of magnetically soft material, insulation spacers from the layer of insulating material, and control conductors as a planar lower overlay pattern from the layer of non-magnetic electrically conductive material. Patterning of the respective layers is preferably achieved by ion milling of selected portions of the layer of magnetically soft material as defined by a first mask and by sequential plasma etching of selected portions of the underlying layer of insulating material and the layer of non-magnetic electrically conductive material as defined by a second composite mask partially comprising the overlay pattern of magnetically soft material and photoresist material.

    摘要翻译： 制造磁性气泡存储装置的方法，其中磁性软材料的可磁化上覆盖图案，例如， 坡莫合金，定义气泡传播元件和气泡功能确定部件位于泡沫支撑磁性膜之上，以完全平面的形式设置，以避免在磁性软材料的典型非平面覆盖图案中遇到气泡传播异常。 该制造方法提供了连续沉积到具有能够支撑非磁性导电材料层的磁性膜，绝缘材料层和诸如坡莫合金的磁软材料层的磁性膜的基板上。 层的图案化然后从最上层逐级进行，以形成磁性软组分，其限定磁性气泡传播路径的元素和磁气泡函数确定组分作为来自磁软材料层的平面上覆盖图案，绝缘间隔物 绝缘材料层，以及作为来自非磁性导电材料层的平面下覆盖图案的控制导体。 各层的图案化优选通过对由第一掩模限定的软磁性材料层的选定部分进行离子研磨，并且通过顺序等离子体蚀刻绝缘材料的下层的选定部分和非磁性电学层 由第二复合掩模限定的导电材料部分地包括磁软材料和光致抗蚀剂材料的覆盖图案。

    CPP sensors with hard bias structures that shunt sense current towards a shield
    35.
    发明授权
    CPP sensors with hard bias structures that shunt sense current towards a shield 有权
    具有硬偏压结构的CPP传感器将屏蔽层的感应电流分流

    公开(公告)号：US08335056B2

    公开(公告)日：2012-12-18

    申请号：US11957466

    申请日：2007-12-16

    申请人： Hamid Balamane ,  Jeffrey R. Childress ,  Robert E. Fontana, Jr. ,  Jordan A. Katine ,  Neil Smith

    发明人： Hamid Balamane ,  Jeffrey R. Childress ,  Robert E. Fontana, Jr. ,  Jordan A. Katine ,  Neil Smith

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B2005/3996

    摘要： Read sensors and associated methods of fabrication are disclosed. A read sensor as disclosed herein includes a first shield, a sensor stack including an antiparallel (AP) free layer, and insulating material disposed on the sensor stack. A aperture is formed through the insulating material above the sensor stack so that a subsequently deposited second shield is electrically coupled to the sensor stack through the aperture. The width of the aperture controls the current density that is injected into the top of the sensor stack. Also, hard bias structures may be formed to be electrically coupled to the sensor stack. The electrical coupling of the sensor stack and the hard bias structures allows current to laterally spread out as it passes through the sensor stack, and hence, provides a non-uniform current density.

    摘要翻译： 公开了传感器和相关的制造方法。 本文公开的读取传感器包括第一屏蔽层，包括反平行（AP）自由层的传感器堆叠以及设置在传感器堆叠上的绝缘材料。 通过传感器堆叠上方的绝缘材料形成孔，使得随后沉积的第二屏蔽件通过孔电耦合到传感器堆叠。 光圈的宽度控制注入到传感器叠层顶部的电流密度。 此外，可以形成硬偏置结构以电耦合到传感器堆叠。 传感器堆叠和硬偏置结构的电耦合允许电流在其通过传感器堆叠时横向展开，因此提供不均匀的电流密度。

    Method for making a magnetoresistive read transducer
    39.
    发明授权
    Method for making a magnetoresistive read transducer 失效
    制造磁阻读取传感器的方法

    公开(公告)号：US4940511A

    公开(公告)日：1990-07-10

    申请号：US355239

    申请日：1989-05-22

    申请人： Robert E. Fontana, Jr. ,  James K. Howard ,  James H. Lee ,  Haralambos Lefakis

    发明人： Robert E. Fontana, Jr. ,  James K. Howard ,  James H. Lee ,  Haralambos Lefakis

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49046

    摘要： A magnetoresistive (MR) read transducer comprising a thin film MR layer formed of ferromagnetic material and a nonmagnetic thin film spacer layer in contact with the MR layer. The spacer layer comprises a material selected from the group consisting of nichrome and nichrome with chromium oxide. A thin film of soft magnetic material is deposited in contact with the spacer layer so that a transverse bias is produced in at least a part of the MR layer. A feature of the invention is that the resistivity of the spacer layer can be chosen by selecting the ratio of nichrome to chromium oxide in the spacer layer. In a specific embodiment the spacer layer extends over only the central region of the MR layer. In case the MR layer is a nickel based alloy, a wet chemical etching process using an etchant comprising an aqueous solution of ceric ammonium nitrate and acetic acid can be used to pattern the spacer layer.

    摘要翻译： 磁阻（MR）读取换能器包括由铁磁材料形成的薄膜MR层和与MR层接触的非磁性薄膜间隔层。 间隔层包括选自镍铬合金和镍铬合金与铬氧化物的材料。 沉积与间隔层接触的软磁性材料的薄膜，使得在MR层的至少一部分中产生横向偏压。 本发明的一个特征是间隔层的电阻率可以通过选择间隔层中的镍铬合金与氧化铬的比例来选择。 在具体实施例中，间隔层仅在MR层的中心区域上延伸。 在MR层是镍基合金的情况下，可以使用使用包含硝酸铈铵和乙酸的水溶液的蚀刻剂的湿化学蚀刻工艺来对间隔层进行图案化。

    Slider with integrated writer and semiconductor heterostucture read sensor
    40.
    发明授权
    Slider with integrated writer and semiconductor heterostucture read sensor 有权
    具有集成写入器和半导体异构结构读取传感器的滑块

    公开(公告)号：US08107197B2

    公开(公告)日：2012-01-31

    申请号：US12345812

    申请日：2008-12-30

    申请人： Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

    发明人： Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

    IPC分类号： G11B15/64

    CPC分类号： G11B5/6005 ,  G11B5/3993

    摘要： A slider for magnetic data recording having a semiconductor based magnetoresistive sensor such as a Lorentz magnetoresistive sensor formed on an air bearing surface of the slider body. The slider is constructed of Si, which advantageously provides a needed physical robustness as well being compatible with the construction of a semiconductor based sensor thereon. A series of transition layers are provided between the surface of the Si slider body and the semiconductor based magnetoresistive sensor in order to provide a necessary grain structure for proper functioning of the sensor. The series of transition layers can be constructed of layers of SiGe each having a unique concentration of Ge.

    摘要翻译： 一种用于磁数据记录的滑块，其具有形成在滑块体的空气轴承表面上的诸如洛伦兹磁阻传感器的基于半导体的磁阻传感器。 滑块由Si构成，其有利地提供所需的物理坚固性，并且与其上的基于半导体的传感器的构造兼容。 在Si滑块体的表面和半导体基磁阻传感器之间提供一系列过渡层，以便为传感器的正常功能提供必要的晶粒结构。 所述一系列过渡层可以由具有独特浓度Ge的SiGe层构成。