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公开(公告)号：US4879619A
公开(公告)日：1989-11-07
申请号：US173956
申请日：1988-03-28
IPC分类号： G11B5/39
CPC分类号： G11B5/3903
摘要： A magnetoresistive (MR) read transducer comprising a thin film MR layer formed of ferromagnetic material and a nonmagnetic thin film spacer layer in contact with the MR layer. The spacer layer comprises a material selected from the group consisting of nichrome and nichrome with chromium oxide. A thin film of soft magnetic material is deposited in contact with the spacer layer so that a transverse bias is produced in at least a part of the MR layer. A feature of the invention is that the resistivity of the spacer layer can be chosen by selected the ration of nichrome to chromium oxide in the spacer layer. In a specific embodiment the spacer layer extends over only the central region of the MR layer. In case the MR layer is a nickel based alloy, a wet chemical etching process using an etchant comprising an aqueous solution of ceric ammonium nitrate and acetic acid can be used pattern the spacer layer.
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公开(公告)号：US4940511A
公开(公告)日：1990-07-10
申请号：US355239
申请日：1989-05-22
IPC分类号： G11B5/39
CPC分类号： G11B5/3903 , Y10T29/49044 , Y10T29/49046
摘要： A magnetoresistive (MR) read transducer comprising a thin film MR layer formed of ferromagnetic material and a nonmagnetic thin film spacer layer in contact with the MR layer. The spacer layer comprises a material selected from the group consisting of nichrome and nichrome with chromium oxide. A thin film of soft magnetic material is deposited in contact with the spacer layer so that a transverse bias is produced in at least a part of the MR layer. A feature of the invention is that the resistivity of the spacer layer can be chosen by selecting the ratio of nichrome to chromium oxide in the spacer layer. In a specific embodiment the spacer layer extends over only the central region of the MR layer. In case the MR layer is a nickel based alloy, a wet chemical etching process using an etchant comprising an aqueous solution of ceric ammonium nitrate and acetic acid can be used to pattern the spacer layer.
摘要翻译： 磁阻（MR）读取换能器包括由铁磁材料形成的薄膜MR层和与MR层接触的非磁性薄膜间隔层。 间隔层包括选自镍铬合金和镍铬合金与铬氧化物的材料。 沉积与间隔层接触的软磁性材料的薄膜，使得在MR层的至少一部分中产生横向偏压。 本发明的一个特征是间隔层的电阻率可以通过选择间隔层中的镍铬合金与氧化铬的比例来选择。 在具体实施例中，间隔层仅在MR层的中心区域上延伸。 在MR层是镍基合金的情况下，可以使用使用包含硝酸铈铵和乙酸的水溶液的蚀刻剂的湿化学蚀刻工艺来对间隔层进行图案化。
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3.发明授权
公开(公告)号：US5315468A
公开(公告)日：1994-05-24
申请号：US920943
申请日：1992-07-28
申请人： Tsann Lin , James K. Howard , Cherngye Hwang , Daniele Mauri , Norbert Staud
发明人： Tsann Lin , James K. Howard , Cherngye Hwang , Daniele Mauri , Norbert Staud
CPC分类号： G11B5/3903 , G11B5/3932
摘要： A magnetoresistive (MR) sensor comprising a sputtered layer of ferromagnetic material and a sputtered layer of antiferromagnetic nickel-manganese (Ni-Mn) to provide an exchange coupled longitudinal bias field in the MR element is described. The antiferromagnetic layer overlays the MR layer and may be patterned to provide the longitudinal bias field only in the end regions of the MR layer. Alternatively, the antiferromagnetic layer can underlay the MR layer with a Zr underlayer to enhance the exchange-coupled field. As initially deposited, the Ni-Mn layer is face-centered-cubic and exhibits little or no exchange-coupled field. After one annealing cycle at a relatively low temperature, the Ni-Mn layer is face-centered-tetragonal and exhibits increased crystallographic ordering and provides sufficient exchange coupling for the MR element to operate. Addition of chromium to the Ni-Mn alloy provides increased corrosion resistance.
摘要翻译： 描述了一种磁阻（MR）传感器，其包括铁磁材料的溅射层和反铁磁镍锰（Ni-Mn）的溅射层，以在MR元件中提供交换耦合的纵向偏置场。 反铁磁层覆盖MR层，并且可以被图案化以仅在MR层的端部区域中提供纵向偏置场。 或者，反铁磁层可以用Zr底层来衬底MR层以增强交换耦合场。 最初沉积时，Ni-Mn层是面心立方体，表现出很少或没有交换耦合场。 在相对较低温度下的一个退火循环之后，Ni-Mn层是面对中心的四边形，并且显示出增加的晶体学顺序，并提供用于MR元件操作的足够的交换耦合。 向Ni-Mn合金中添加铬提高了耐腐蚀性。
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公开(公告)号：US5066552A
公开(公告)日：1991-11-19
申请号：US394784
申请日：1989-08-16
IPC分类号： C23C14/14 , G11B5/64 , G11B5/65 , G11B5/66 , G11B5/73 , G11B5/738 , G11B5/85 , G11B5/851 , H01F10/16 , H01F41/18
CPC分类号： G11B5/656 , Y10S428/90 , Y10S428/928 , Y10T428/12465 , Y10T428/1266 , Y10T428/12931
摘要： An improved CoPt alloy magnetic recording disk for horizontal recording has a magnetic recording layer which includes oxygen, the oxygen being present preferably in the range of approximately 5 to 30 atomic percent. The resulting disk structure has substantially decreased intrinsic media noise at high linear recording density.
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5.发明授权High coercivity low noise cobalt alloy magnetic recording medium and its manufacturing process 失效高科技低噪声钴合金磁记录介质及其制造工艺
公开(公告)号：US5062938A
公开(公告)日：1991-11-05
申请号：US464842
申请日：1990-01-16
申请人： James K. Howard
发明人： James K. Howard
CPC分类号： G11B5/7325 , G11B5/656 , G11B5/72 , G11B5/851 , Y10S428/90 , Y10T428/12931
摘要： A cobalt alloy disk for horizontal magnetic recording has both high coercivity and low noise at high recording density. The magnetic layer in the disk contains, in addition to the cobalt alloy material, an oxide of one or more "impurity" elements which have both a relatively low solubility in cobalt and a high affinity for oxygen. Such elements include yttrium (Y), silicon (Si), the rare earth elements, hafnium (Hf), germanium (Ge), tin (Sn) and zirconium (Zr). The disk may be formed by co-sputtering the cobalt alloy material and the impurity element(s), and thereafter oxidizing the impurity element(s). The oxidation may occur by heating the disk while the magnetic layer is exposed to oxygen or air, or by exposure of the magnetic layer to an argon-oxygen plasma.
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公开(公告)号：US4755897A
公开(公告)日：1988-07-05
申请号：US43675
申请日：1987-04-28
申请人： James K. Howard
发明人： James K. Howard
CPC分类号： G11B5/399
摘要： An improved thin film magnetoresistive (MR) sensor uses an alloy comprising Fe, Mn and Cr as an antiferromagnetic layer to provide a longitudinal exchange bias in the ferromagnetic MR layer. Sufficient exchange biasing is provided and the FeMnCr layer exhibits excellent corrosion resistance.
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7.发明授权Vertical recording medium with improved perpendicular magnetic anisotropy due to influence of beta-tantalum underlayer 失效垂直记录介质由于β-钽底层的影响而具有改善的垂直磁各向异性
公开(公告)号：US4632883A
公开(公告)日：1986-12-30
申请号：US725977
申请日：1985-04-22
CPC分类号： G11B5/64 , Y10S428/90 , Y10S428/928 , Y10T428/12465 , Y10T428/12806 , Y10T428/12847 , Y10T428/12854 , Y10T428/12861 , Y10T428/12944 , Y10T428/12951
摘要： A thin film alloy disk for vertical magnetic recording has a cobalt-chromium-tantalum (CoCrTa) magnetic layer with perpendicular magnetic anisotropy deposited on an underlayer of beta-tantalum (.beta.-Ta). The .beta.-Ta layer is deposited on a suitable substrate, such as silicon, which is compatible with the formation of the beta phase of tantalum. The highly preferred orientation of the .beta.-Ta film on the substrate and the incorporation of Ta in the magnetic film results in the magnetic film having improved perpendicular magnetic anisotropy, high perpendicular coercivity and low horizontal coercivity. A nickel-iron (NiFe) layer may be deposited between the substrate and the .beta.-Ta underlayer to provide a magnetic flux return path.
摘要翻译： 用于垂直磁记录的薄膜合金盘具有垂直磁各向异性的钴 - 铬 - 钽（CoCrTa）磁性层沉积在β-钽（β-Ta）的底层上。 β-Ta层沉积在合适的衬底上，例如硅，其与钽的β相的形成相容。 在基板上的β-Ta膜的高度优选取向和在磁膜中掺入Ta导致具有改善的垂直磁各向异性，高垂直矫顽力和低水平矫顽力的磁膜。 镍 - 铁（NiFe）层可以沉积在衬底和β-Ta底层之间以提供磁通返回路径。
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公开(公告)号：US4488262A
公开(公告)日：1984-12-11
申请号：US389204
申请日：1982-06-17
IPC分类号： G11C17/00 , G11C17/08 , G11C17/16 , H01L23/525 , G11C11/40
CPC分类号： G11C17/16 , H01L23/5252 , H01L2924/0002 , H01L2924/3011
摘要： An electrically programmable read only memory assembly having cells arranged at the intersections of bit lines (BL1) and word lines (WL1, WL2), wherein each cell is formed of a bipolar transistor provided with a base region (70) and an emitter region (71) covered with a dielectric layer (2) made of an oxide or titanate of a transition metal. The cell in this condition represents a binary 0 information bit. The application of an appropriate voltage of approximately 4 volts to the pads of this cell through its corresponding bit line (BL1) and word line (WL2) causes the dielectric layer to break down and places the bit line in ohmic contact with the emitter, which sets the cell in its second condition representing a binary "1" information bit.
摘要翻译： 一种电可编程只读存储器组件，其具有布置在位线（BL1）和字线（WL1，WL2）的交点处的单元，其中每个单元由双极晶体管形成，该双极晶体管具有基极区域（70）和发射极区域 71）覆盖有由过渡金属的氧化物或钛酸盐制成的电介质层（2）。 该条件下的单元表示二进制0信息位。 通过其对应的位线（BL1）和字线（WL2）向该单元的焊盘施加大约4伏特的适当电压，导致电介质层破裂并将位线与发射极欧姆接触， 将单元设置为表示二进制“1”信息位的第二条件。
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公开(公告)号：US5552204A
公开(公告)日：1996-09-03
申请号：US372410
申请日：1995-01-13
CPC分类号： G11B5/72 , G11B5/8408 , Y10S428/90 , Y10T428/2495 , Y10T428/24975 , Y10T428/265
摘要： A significantly thinner boron carbide overcoat layer is provided for a magnetic disk which has the same durability as thicker prior art overcoat layers for protecting an underlying magnetic layer. By employing adhesion layers selected from the group consisting of Ge, Ru, WTiSi, WTi, Si, and Y between the magnetic layer and the overcoat layer, the durability of the overcoat layer is significantly increased over a single overcoat layer of B4C. Certain process steps in the making of the B4C overcoat layer still further enhance the durability of the B4C overcoat layer by maintaining the disk or substrate specimen at a floating potential in a plasma chamber and employing low levels of argon pressure and sputtering wattage.
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公开(公告)号：US5492775A
公开(公告)日：1996-02-20
申请号：US69060
申请日：1993-05-28
CPC分类号： C23C14/085 , C23C14/08 , C23C14/58 , C23C14/5806 , C23C14/584 , G11B5/653
摘要： A high-density recording media comprising longitudinally oriented polycrystalline barium ferrite exhibits large coercivity, corrosion resistance, high hardness and durability. Films are prepared by on-axis sputtering at ambient temperatures from stoichiometric targets followed by a post-deposition anneal at approximately 850.degree.C. to induce crystallization. Crystallization yields a magnetic film with large in-plane remanence and a fine scale texturing that greatly improves the tribological performance of barium ferrite disks. Exceptional durability can be achieved on disks without overcoats. Grain sizes as small as 200 .ANG. are produced by doping with small amounts of Cr.sub.2 O.sub.3 or other additives. Coercivities greater than 4000 Oe are achieved even in small grain films.
摘要翻译： 包含纵向取向的多晶钡铁氧体的高密度记录介质具有较高的矫顽力，耐腐蚀性，高硬度和耐久性。 通过在环境温度下从化学计量的靶进行在轴溅射制备膜，然后在约850℃下进行后沉积退火以诱导结晶。 结晶产生具有大的面内剩余磁性膜和精细尺度纹理，大大提高钡铁氧体磁盘的摩擦学性能。 可以在没有大衣的磁盘上实现卓越的耐久性。 通过掺杂少量的Cr 2 O 3或其它添加剂来生产小于200安培的晶粒尺寸。 即使在小颗粒薄膜中也能获得大于4000 Oe的矫顽力。
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