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公开(公告)号：US4879619A
公开(公告)日：1989-11-07
申请号：US173956
申请日：1988-03-28
IPC分类号： G11B5/39
CPC分类号： G11B5/3903
摘要： A magnetoresistive (MR) read transducer comprising a thin film MR layer formed of ferromagnetic material and a nonmagnetic thin film spacer layer in contact with the MR layer. The spacer layer comprises a material selected from the group consisting of nichrome and nichrome with chromium oxide. A thin film of soft magnetic material is deposited in contact with the spacer layer so that a transverse bias is produced in at least a part of the MR layer. A feature of the invention is that the resistivity of the spacer layer can be chosen by selected the ration of nichrome to chromium oxide in the spacer layer. In a specific embodiment the spacer layer extends over only the central region of the MR layer. In case the MR layer is a nickel based alloy, a wet chemical etching process using an etchant comprising an aqueous solution of ceric ammonium nitrate and acetic acid can be used pattern the spacer layer.
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公开(公告)号：US4940511A
公开(公告)日：1990-07-10
申请号：US355239
申请日：1989-05-22
IPC分类号： G11B5/39
CPC分类号： G11B5/3903 , Y10T29/49044 , Y10T29/49046
摘要： A magnetoresistive (MR) read transducer comprising a thin film MR layer formed of ferromagnetic material and a nonmagnetic thin film spacer layer in contact with the MR layer. The spacer layer comprises a material selected from the group consisting of nichrome and nichrome with chromium oxide. A thin film of soft magnetic material is deposited in contact with the spacer layer so that a transverse bias is produced in at least a part of the MR layer. A feature of the invention is that the resistivity of the spacer layer can be chosen by selecting the ratio of nichrome to chromium oxide in the spacer layer. In a specific embodiment the spacer layer extends over only the central region of the MR layer. In case the MR layer is a nickel based alloy, a wet chemical etching process using an etchant comprising an aqueous solution of ceric ammonium nitrate and acetic acid can be used to pattern the spacer layer.
摘要翻译： 磁阻（MR）读取换能器包括由铁磁材料形成的薄膜MR层和与MR层接触的非磁性薄膜间隔层。 间隔层包括选自镍铬合金和镍铬合金与铬氧化物的材料。 沉积与间隔层接触的软磁性材料的薄膜，使得在MR层的至少一部分中产生横向偏压。 本发明的一个特征是间隔层的电阻率可以通过选择间隔层中的镍铬合金与氧化铬的比例来选择。 在具体实施例中，间隔层仅在MR层的中心区域上延伸。 在MR层是镍基合金的情况下，可以使用使用包含硝酸铈铵和乙酸的水溶液的蚀刻剂的湿化学蚀刻工艺来对间隔层进行图案化。
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3.发明授权Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor 失效旋转阀磁阻传感器采用自锁层压层和磁记录系统，采用传感器
公开(公告)号：US5583725A
公开(公告)日：1996-12-10
申请号：US259815
申请日：1994-06-15
申请人： Kevin R. Coffey , Bruce A. Gurney , David E. Heim , Haralambos Lefakis , Daniele Mauri , Virgil S. Speriosu , Dennis R. Wilhoit
发明人： Kevin R. Coffey , Bruce A. Gurney , David E. Heim , Haralambos Lefakis , Daniele Mauri , Virgil S. Speriosu , Dennis R. Wilhoit
IPC分类号： G01R33/09 , G11B5/39 , G11C11/15 , H01F10/08 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/127 , G01R33/02 , G11B5/33 , H01L43/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/399 , G11C11/15 , H01F10/3272 , H01L43/10 , G11B2005/3996
摘要： A magnetic recording system uses an improved spin valve magnetoresistive (SVMR) sensor. The SVMR sensor has a self-pinned laminated layer as the pinned ferromagnetic layer in place of the conventional single-layer pinned layer. Because this laminated layer is "self-pinned", a hard bias or exchange bias layer is not needed. The self-pinned laminated layer has at least two ferromagnetic films antiferromagnetically coupled to one another across a thin antiferromagnetically (AF) coupling film. Since the two ferromagnetic films in this laminated layer have their magnetic moments aligned antiparallel, their two magnetic moments can be made to essentially cancel by making the two ferromagnetic films of substantially the same thickness. The magnetic field energy generated by the signal field acting on this laminated layer will be significantly less than the effective anisotropy energy of the laminated layer. This is because the former is proportional to the difference in thicknesses of the two ferromagnetic films in the laminated layer, while the latter is proportional to the sum of the thicknesses. As a result, the laminated layer will not rotate in the presence of the signal field, but will be "self-pinned". The elimination of the exchange bias layer previously required for pinning also eliminates the need for Ni--Mn and its associated high-temperature process.
摘要翻译： 磁记录系统使用改进的自旋阀磁阻（SVMR）传感器。 SVMR传感器具有作为固定铁磁层的自固定层压层，代替传统的单层固定层。 因为该层叠层是“自固定的”，所以不需要硬偏置或交换偏置层。 自固定层叠层具有至少两个铁磁膜，其通过薄的反铁磁（AF）耦合膜彼此反铁磁耦合。 由于该层压层中的两个铁磁膜的磁矩反平行取向，所以通过使两个铁磁膜的厚度基本相同，可以使它们的两个磁矩基本抵消。 由作用在该层叠层上的信号场产生的磁场能量将显着小于层压层的有效各向异性能量。 这是因为前者与层叠层中的两个铁磁膜的厚度差成比例，而后者与厚度之和成比例。 结果，叠层在信号场的存在下不会旋转，而是“自固定”。 先前为钉扎所需的消除交换偏置层也消除了对Ni-Mn及其相关高温工艺的需要。
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公开(公告)号：US5422571A
公开(公告)日：1995-06-06
申请号：US14981
申请日：1993-02-08
申请人： Bruce A. Gurney , David E. Heim , Haralambos Lefakis , Omar U. Need, III , Virgil S. Speriosu , Dennis R. Wilhoit
发明人： Bruce A. Gurney , David E. Heim , Haralambos Lefakis , Omar U. Need, III , Virgil S. Speriosu , Dennis R. Wilhoit
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3903 , G11B2005/3996
摘要： A magnetoresistive read sensor based on the spin valve effect in which a component of the read element resistance varies as the cosine of the angle between the magnetization directions in two adjacent magnetic layers is described. The sensor read element includes two adjacent ferromagnetic layers separated by a nonmagnetic metallic layer. A layer of nonmagnetic electrically conductive material is deposited adjacent to and in contact with one of the ferromagnetic layers, referred to as a filter layers to form a back or conduction layer which provides a low resistance path for conduction electrons transmitted through the adjacent filter layer. The thickness of the filter layer is selected such that it effectively blocks conduction electrons having spins antiparallel to the direction of magnetization in the filter layer while allowing conduction electrons with parallel spins to be transmitted through the layer into the adjacent back layer. The magnetization of the filter layer is free to rotate in response to an applied magnetic field thereby effectively varying the electrically resistance to conduction electrons in the back/filter layer. The thickness of the back layer is selected to optimize the sensor parameters being measured and is in a range of about 4.0 A to 1000 A.
摘要翻译： 基于自旋阀效应的磁阻读取传感器，其中读取元件电阻的分量随着两个相邻磁性层中的磁化方向之间的角度的余弦而变化。 传感器读取元件包括由非磁性金属层隔开的两个相邻的铁磁层。 一层非磁性导电材料沉积在一个铁磁层附近并与之接触，被称为过滤层，以形成背面或导电层，该导电层为通过相邻的过滤层传导的传导电子提供低电阻路径。 选择滤光层的厚度，使得其有效地阻挡具有与滤光层中的磁化方向反平行的传导的传导电子，同时允许具有平行自旋的传导电子通过该层传输到相邻的背层中。 过滤层的磁化响应于施加的磁场而自由旋转，从而有效地改变后/过滤层中的传导电子的电阻。 选择背层的厚度以优化被测量的传感器参数，并且在约4.0A至1000A的范围内。
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5.发明授权Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor 失效具有改进的铁磁感应层和使用该传感器的磁记录系统的磁阻传感器
公开(公告)号：US5408377A
公开(公告)日：1995-04-18
申请号：US138170
申请日：1993-10-15
申请人： Bruce A. Gurney , Haralambos Lefakis , Omar U. Need, III , Stuart S. P. Parkin , Virgil S. Speriosu , Dennis R. Wilhoit
发明人： Bruce A. Gurney , Haralambos Lefakis , Omar U. Need, III , Stuart S. P. Parkin , Virgil S. Speriosu , Dennis R. Wilhoit
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/096 , G11B5/3903 , G11B5/3967 , H01F10/325 , G11B2005/3996 , H01F10/3295
摘要： A magnetic recording data storage system of high recording density is made possible by an improved magnetoresistive sensor. The sensor has a ferromagnetic sensing layer that is a laminated layer of two ferromagnetic films antiferromagnetically coupled to one another and separated by an antiferromagnetically coupling film. By appropriate selection of the thickness of the nonmagnetic antiferromagnetically coupling film, the ferromagnetic films become antiferromagnetically coupled and their magnetizations rotate as a single rigid unit in the presence of the external magnetic field to be sensed. The ferromagnetic sensing layer can be used in conventional magnetoresistive sensors of the anisotropic magnetoresistive (AMR) type and in spin valve magnetoresistive (SVMR) sensors. In the spin valve sensor, the laminated ferromagnetic sensing layer serves as the free layer and is preferably formed of two films of nickel-iron (Ni-Fe) separated by a ruthenium (Ru) antiferromagnetically coupling film. Because the two ferromagnetic films have their moments aligned antiparallel, then, assuming the two films are made of the same material, by selecting the two films to have different thicknesses the effective free layer thickness can be reduced without significantly reducing the magnetoresistance.
摘要翻译： 通过改进的磁阻传感器可以实现高记录密度的磁记录数据存储系统。 传感器具有铁磁感测层，其是两个铁磁膜的层叠层，它们彼此反铁磁耦合并由反铁磁耦合膜隔开。 通过适当选择非磁性反铁磁耦合膜的厚度，铁磁膜在存在待感测的外部磁场的情况下变为反铁磁耦合并且它们的磁化作为单个刚性单元旋转。 铁磁感应层可用于各向异性磁阻（AMR）型和自旋阀磁阻（SVMR）传感器的常规磁阻传感器。 在自旋阀传感器中，层叠铁磁感应层用作自由层，优选由两个由钌（Ru）反铁磁耦合膜分离的镍 - 铁（Ni-Fe）膜形成。 因为两个铁磁膜的力矩反平行取向，所以假设两个膜由相同的材料制成，通过选择两个膜以具有不同的厚度，可以减少有效的自由层厚度而不显着降低磁阻。
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公开(公告)号：US4886681A
公开(公告)日：1989-12-12
申请号：US281960
申请日：1988-12-06
CPC分类号： C23C14/20 , C23C14/022 , C23C14/22 , H05K3/381 , H05K3/388
摘要： A technique is described for improving metal-organic substrate adhesion and for reducing stress between the metal film and the substrate. Low energy reactive ions, electrons, or photons are incident upon the substrate to alter the surface chemistry of the substrate to a depth of from about 10 angstroms to a few hundred angstroms. The energy of the incident reactive ions and electrons is about 50-2000 eV, while the energy of the incident photons is about 0.2-500 eV. Irradiation of the substrate can occur prior to or during metal deposition. For simultaneous metal deposition/particle irradiation, the arrival rates of the metal atoms and the substrate treatment particles are within a few order of magnitude of one another. Room temperatures or elevated temperatures are suitable.
摘要翻译： 描述了一种用于改善金属 - 有机衬底粘附和减少金属膜和衬底之间的应力的技术。 低能量反应离子，电子或光子入射到衬底上以将衬底的表面化学性质改变到约10埃至几百埃的深度。 入射的反应离子和电子的能量约为50-2000eV，入射光子的能量约为0.2-500eV。 衬底的照射可以在金属沉积之前或期间发生。 为了同时进行金属沉积/颗粒照射，金属原子和基板处理颗粒的到达速率在彼此的几个数量级内。 室温或高温适用。
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