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    LIGHT EMITTING DIODE (LED) ARRAYS INCLUDING DIRECT DIE ATTACH AND RELATED ASSEMBLIES
    33.
    发明申请
    LIGHT EMITTING DIODE (LED) ARRAYS INCLUDING DIRECT DIE ATTACH AND RELATED ASSEMBLIES 有权
    发光二极管（LED）阵列包括直接连接和相关组件

    公开(公告)号：US20120193649A1

    公开(公告)日：2012-08-02

    申请号：US13027006

    申请日：2011-02-14

    申请人： Matthew Donofrio ,  John Adam Edmond ,  Hua-Shuang Kong ,  Peter S. Andrews ,  David Todd Emerson

    发明人： Matthew Donofrio ,  John Adam Edmond ,  Hua-Shuang Kong ,  Peter S. Andrews ,  David Todd Emerson

    IPC分类号： H01L27/15 ,  H01L21/82

    CPC分类号： H01L25/0753 ,  H01L33/505 ,  H01L33/62 ,  H01L2224/16

    摘要： An electronic device may include a packaging substrate having a packaging substrate face with a plurality of electrically conductive pads on the packaging substrate face. A first light emitting diode die may bridge first and second ones of the electrically conductive pads. More particularly, the first light emitting diode die may include first anode and cathode contacts respectively coupled to the first and second electrically conductive pads using metallic bonds. Moreover, widths of the metallic bonds between the first anode contact and the first pad and between the first cathode contact and the second pad may be at least 60 percent of a width of the first light emitting diode die. A second light emitting diode die may bridge third and fourth ones of the electrically conductive pads. The second light emitting diode die may include second anode and cathode contacts respectively coupled to the third and fourth electrically conductive pads using metallic bonds. Widths of the metallic bonds between the second anode contact and the second pad and between the second cathode contact and the third pad may be at least 60 percent of a width of the first light emitting diode die.

    摘要翻译： 电子设备可以包括具有包装基板面的封装基板，在封装基板面上具有多个导电焊盘。 第一发光二极管管芯可以桥接第一和第二导电焊盘。 更具体地，第一发光二极管管芯可以包括使用金属接合分别耦合到第一和第二导电焊盘的第一阳极和阴极触点。 此外，第一阳极接触件和第一焊盘之间以及第一阴极接触件和第二焊盘之间的金属接合的宽度可以是第一发光二极管管芯的宽度的至少60％。 第二发光二极管管芯可以桥接第三和第四导电焊盘。 第二发光二极管管芯可以包括使用金属接合分别耦合到第三和第四导电焊盘的第二阳极和阴极触点。 第二阳极接触件和第二焊盘之间以及第二阴极接触件和第三焊盘之间的金属接合的宽度可以是第一发光二极管管芯的宽度的至少60％。

    GAS COOLED LED LAMP
    37.
    发明申请
    GAS COOLED LED LAMP 有权
    气体冷却LED灯

    公开(公告)号：US20130271972A1

    公开(公告)日：2013-10-17

    申请号：US13446759

    申请日：2012-04-13

    申请人： Christopher P. Hussell ,  John Adam Edmond ,  Gerald H. Negley

    发明人： Christopher P. Hussell ,  John Adam Edmond ,  Gerald H. Negley

    IPC分类号： F21V29/00 ,  H01R43/00 ,  F21V9/00

    CPC分类号： F21K9/13 ,  F21K9/23 ,  F21K9/232 ,  F21K9/64 ,  F21V3/00 ,  F21V3/08 ,  F21V9/30 ,  F21V29/85 ,  F21Y2107/00 ,  F21Y2113/13 ,  F21Y2115/10 ,  Y10T29/49117

    摘要： A gas cooled LED lamp and submount is disclosed. The centralized nature of the LEDs allows the LEDs to be configured near the central portion of the optical envelope of the lamp. In some embodiments, the LEDs can be mounted on or fixed to a light transmissive submount. In some embodiments, LEDs can be disposed on both sides of a two-sided submount, or on thee or more sides if the submount structure includes three or more mounting surfaces. In example embodiments, the LEDs can be cooled and/or cushioned by a gas in thermal communication with the LED array to enable the LEDs to maintain an appropriate operating temperature for efficient operation and long life. In some embodiments, the gas is at a pressure of from about 0.5 to about 10 atmospheres and has a thermal conductivity of at least about 60 mW/m-K.

    摘要翻译： 公开了一种气体冷却的LED灯和底座。 LED的集中性使得LED可以配置在灯的光学外壳的中心部分附近。 在一些实施例中，LED可以安装在透光底座上或固定到透光底座上。 在一些实施例中，如果底座结构包括三个或更多个安装表面，则LED可以设置在双面底座的两侧上，或者在其一侧或更多侧上。 在示例性实施例中，可以通过与LED阵列热连通的气体来冷却和/或缓冲LED，以使得LED能够保持适当的操作温度以有效地操作和长寿命。 在一些实施方案中，气体处于约0.5至约10个大气压的压力，并且具有至少约60mW / m-K的热导率。

    High output small area group III nitride LEDs
    38.
    发明授权
    High output small area group III nitride LEDs 有权
    高输出小面积III族氮化物LED

    公开(公告)号：US08513686B2

    公开(公告)日：2013-08-20

    申请号：US11037965

    申请日：2005-01-18

    申请人： John Adam Edmond

    发明人： John Adam Edmond

    IPC分类号： H01L33/26

    CPC分类号： H01L33/405 ,  H01L33/20 ,  H01L33/32 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00012

    摘要： A light emitting diode is disclosed with advantageous output on a per unit area basis. The diode includes an area of less than 100,000 square microns, operates at a forward voltage of less than 4.0 volts, produces a radiant flux of at least 24 milliwatts at 20 milliamps drive current, and emits at a dominant wavelength between about 395 and 540 nanometers.

    摘要翻译： 公开了一种以每单位面积为基础的有利输出的发光二极管。 二极管包括小于100,000平方微米的面积，在小于4.0伏特的正向电压下工作，在20毫安驱动电流下产生至少24毫瓦的辐射通量，并以约395和540纳米之间的主波长发射 。

    REFLECTIVE MOUNTING SUBSTRATES FOR FLIP-CHIP MOUNTED HORIZONTAL LEDS
    39.
    发明申请
    REFLECTIVE MOUNTING SUBSTRATES FOR FLIP-CHIP MOUNTED HORIZONTAL LEDS 有权
    用于倒装芯片安装的水平LED的反射安装基板

    公开(公告)号：US20120193662A1

    公开(公告)日：2012-08-02

    申请号：US13178791

    申请日：2011-07-08

    申请人： Matthew Donofrio ,  John Adam Edmond ,  Peter Scott Andrews ,  David Der Chi Chang

    发明人： Matthew Donofrio ,  John Adam Edmond ,  Peter Scott Andrews ,  David Der Chi Chang

    IPC分类号： H01L33/50

    CPC分类号： H01L33/60 ,  H01L25/0753 ,  H01L33/20 ,  H01L33/486 ,  H01L33/505 ,  H01L33/62 ,  H01L2224/16

    摘要： A light emitting device includes a mounting substrate having a reflective layer that defines spaced apart anode and cathode pads, and a gap between them. A light emitting diode die is flip-chip mounted on the mounting substrate, such that the anode contact of the LED die is bonded to the anode pad and the cathode contact of the LED die is bonded to the cathode pad. A lens extends from the mounting substrate to surround the LED die. The reflective layer extends on the mounting substrate to cover substantially all of the mounting substrate that lies beneath the lens, excluding the gap, and may also extend beyond the lens.

    摘要翻译： 发光器件包括具有限定间隔开的阳极和阴极焊盘以及它们之间的间隙的反射层的安装基板。 将发光二极管管芯倒装安装在安装基板上，使得LED管芯的阳极接触件接合到阳极焊盘，并将LED管芯的阴极接触件接合到阴极焊盘。 透镜从安装基板延伸以围绕LED管芯。 反射层在安装基板上延伸以覆盖位于透镜下方的基本上所有的安装基板，不包括间隙，并且还可以延伸超出透镜。

    Semiconductor light emitting apparatus including elongated hollow wavelength conversion tubes and methods of assembling same
    40.
    发明授权
    Semiconductor light emitting apparatus including elongated hollow wavelength conversion tubes and methods of assembling same 有权
    包括细长型中空波长转换管的半导体发光装置及其组装方法

    公开(公告)号：US08004172B2

    公开(公告)日：2011-08-23

    申请号：US12273216

    申请日：2008-11-18

    申请人： Christopher P. Hussell ,  John Adam Edmond

    发明人： Christopher P. Hussell ,  John Adam Edmond

    IPC分类号： H01J1/62

    CPC分类号： F21V15/01 ,  F21K9/00 ,  F21K9/61 ,  F21K9/64 ,  F21V29/70 ,  F21Y2115/10 ,  G02B6/0003 ,  G02B6/001 ,  G02B6/0035 ,  G02B6/005 ,  G02B6/0096

    摘要： A semiconductor light emitting apparatus includes an elongated hollow wavelength conversion tube that includes an elongated wavelength conversion tube wall having wavelength conversion material, such as phosphor, dispersed therein. A semiconductor light emitting device is oriented to emit light inside the elongated hollow wavelength conversion tube to impinge upon the elongated wavelength conversion tube wall and the wavelength conversion material dispersed therein. The elongated hollow wavelength conversion tube may have an open end, a crimped end, a reflective end, and/or other configurations. Multiples tubes and/or multiple semiconductor light emitting devices may also be used in various configurations. Related assembling methods are also described.

    摘要翻译： 半导体发光装置包括细长的中空波长转换管，其包括分散在其中的波长转换材料（例如磷光体）的细长波长转换管壁。 半导体发光器件被定向以在细长的中空波长转换管内发光，以照射到分散在其中的细长波长转换管壁和波长转换材料。 细长的中空波长转换管可以具有开口端，压接端，反射端和/或其它构造。 多个管和/或多个半导体发光器件也可以以各种配置使用。 还描述了相关的组装方法。