利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

99 条记录 (耗时 0.032 秒)

    LIGHT EMITTING DIODE (LED) ARRAYS INCLUDING DIRECT DIE ATTACH AND RELATED ASSEMBLIES
    4.
    发明申请
    LIGHT EMITTING DIODE (LED) ARRAYS INCLUDING DIRECT DIE ATTACH AND RELATED ASSEMBLIES 有权
    发光二极管（LED）阵列包括直接连接和相关组件

    公开(公告)号：US20120193649A1

    公开(公告)日：2012-08-02

    申请号：US13027006

    申请日：2011-02-14

    申请人： Matthew Donofrio ,  John Adam Edmond ,  Hua-Shuang Kong ,  Peter S. Andrews ,  David Todd Emerson

    发明人： Matthew Donofrio ,  John Adam Edmond ,  Hua-Shuang Kong ,  Peter S. Andrews ,  David Todd Emerson

    IPC分类号： H01L27/15 ,  H01L21/82

    CPC分类号： H01L25/0753 ,  H01L33/505 ,  H01L33/62 ,  H01L2224/16

    摘要： An electronic device may include a packaging substrate having a packaging substrate face with a plurality of electrically conductive pads on the packaging substrate face. A first light emitting diode die may bridge first and second ones of the electrically conductive pads. More particularly, the first light emitting diode die may include first anode and cathode contacts respectively coupled to the first and second electrically conductive pads using metallic bonds. Moreover, widths of the metallic bonds between the first anode contact and the first pad and between the first cathode contact and the second pad may be at least 60 percent of a width of the first light emitting diode die. A second light emitting diode die may bridge third and fourth ones of the electrically conductive pads. The second light emitting diode die may include second anode and cathode contacts respectively coupled to the third and fourth electrically conductive pads using metallic bonds. Widths of the metallic bonds between the second anode contact and the second pad and between the second cathode contact and the third pad may be at least 60 percent of a width of the first light emitting diode die.

    摘要翻译： 电子设备可以包括具有包装基板面的封装基板，在封装基板面上具有多个导电焊盘。 第一发光二极管管芯可以桥接第一和第二导电焊盘。 更具体地，第一发光二极管管芯可以包括使用金属接合分别耦合到第一和第二导电焊盘的第一阳极和阴极触点。 此外，第一阳极接触件和第一焊盘之间以及第一阴极接触件和第二焊盘之间的金属接合的宽度可以是第一发光二极管管芯的宽度的至少60％。 第二发光二极管管芯可以桥接第三和第四导电焊盘。 第二发光二极管管芯可以包括使用金属接合分别耦合到第三和第四导电焊盘的第二阳极和阴极触点。 第二阳极接触件和第二焊盘之间以及第二阴极接触件和第三焊盘之间的金属接合的宽度可以是第一发光二极管管芯的宽度的至少60％。

    Single step pendeo- and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures
    5.
    发明授权
    Single step pendeo- and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures 有权
    具有III族氮化物缓冲层和所得结构的III族氮化物外延层的单步侧向和横向外延过度生长

    公开(公告)号：US06764932B2

    公开(公告)日：2004-07-20

    申请号：US10056607

    申请日：2002-01-24

    申请人： Hua-Shuang Kong ,  John Adam Edmond ,  Kevin Ward Haberern ,  David Todd Emerson

    发明人： Hua-Shuang Kong ,  John Adam Edmond ,  Kevin Ward Haberern ,  David Todd Emerson

    IPC分类号： H01L213205

    CPC分类号： H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/0265 ,  H01S5/3202 ,  H01S2304/12

    摘要： A method of fabricating a gallium nitride-based semiconductor structure on a substrate includes the steps of forming a mask having at least one opening therein directly on the substrate, growing a buffer layer through the opening, and growing a layer of gallium nitride upwardly from the buffer layer and laterally across the mask. During growth of the gallium nitride from the mask, the vertical and horizontal growth rates of the gallium nitride layer are maintained at rates sufficient to prevent polycrystalline material nucleating on said mask from interrupting the lateral growth of the gallium nitride layer. In an alternative embodiment, the method includes forming at least one raised portion defining adjacent trenches in the substrate and forming a mask on the substrate, the mask having at least one opening over the upper surface of the raised portion. A buffer layer may be grown from the upper surface of the raised portion. The gallium nitride layer is then grown laterally by pendeoepitaxy over the trenches.

    摘要翻译： 在衬底上制造氮化镓基半导体结构的方法包括以下步骤：在衬底上直接形成具有至少一个开口的掩模，通过该开口生长缓冲层，并从其中向上生长一层氮化镓 缓冲层和横向穿过掩模。 在从掩模生长氮化镓期间，氮化镓层的垂直和水平生长速率保持在足以防止在所述掩模上成核的多晶材料中断氮化镓层的横向生长的速率。 在替代实施例中，该方法包括形成限定衬底中相邻沟槽的至少一个凸起部分，并在衬底上形成掩模，该掩模在凸起部分的上表面上具有至少一个开口。 缓冲层可以从凸起部分的上表面生长。 然后氮化镓层通过在沟槽上的外延生长而横向生长。

    Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
    7.
    发明授权
    Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures 有权
    具有III族氮化物缓冲层和所得结构的III族氮化物外延层的单步横向和横向外延过度生长

    公开(公告)号：US06812053B1

    公开(公告)日：2004-11-02

    申请号：US09679799

    申请日：2000-10-05

    申请人： Hua-Shuang Kong ,  John Adam Edmond ,  Kevin Ward Haberern ,  David Todd Emerson

    发明人： Hua-Shuang Kong ,  John Adam Edmond ,  Kevin Ward Haberern ,  David Todd Emerson

    IPC分类号： H01L2100

    CPC分类号： H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/0265 ,  H01S5/3202 ,  H01S2304/12

    摘要： A method of fabricating a gallium nitride-based semiconductor structure on a substrate includes the steps of forming a mask having at least one opening therein directly on the substrate, growing a buffer layer through the opening, and growing a layer of gallium nitride upwardly from the buffer layer and laterally across the mask. During growth of the gallium nitride from the mask, the vertical and horizontal growth rates of the gallium nitride layer are maintained at rates sufficient to prevent polycrystalline material nucleating on said mask from interrupting the lateral growth of the gallium nitride layer. In an alternative embodiment, the method includes forming at least one raised portion defining adjacent trenches in the substrate and forming a mask on the substrate, the mask having at least one opening over the upper surface of the raised portion. A buffer layer may be grown from the upper surface of the raised portion. The gallium nitride layer is then grown laterally by pendeoepitaxy over the trenches.

    摘要翻译： 在衬底上制造氮化镓基半导体结构的方法包括以下步骤：在衬底上直接形成具有至少一个开口的掩模，通过该开口生长缓冲层，并从其中向上生长一层氮化镓 缓冲层和横向穿过掩模。 在从掩模生长氮化镓期间，氮化镓层的垂直和水平生长速率保持在足以防止在所述掩模上成核的多晶材料中断氮化镓层的横向生长的速率。 在替代实施例中，该方法包括形成限定衬底中相邻沟槽的至少一个凸起部分，并在衬底上形成掩模，该掩模在凸起部分的上表面上具有至少一个开口。 缓冲层可以从凸起部分的上表面生长。 然后氮化镓层通过在沟槽上的外延生长而横向生长。

    Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures
    9.
    发明授权
    Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures 有权
    具有III族氮化物缓冲层和所得结构的III族氮化物外延层的单步侧向和横向外延过度生长

    公开(公告)号：US06955977B2

    公开(公告)日：2005-10-18

    申请号：US10685597

    申请日：2003-10-16

    申请人： Hua-Shuang Kong ,  John Adam Edmond ,  Kevin Ward Haberern ,  David Todd Emerson

    发明人： Hua-Shuang Kong ,  John Adam Edmond ,  Kevin Ward Haberern ,  David Todd Emerson

    IPC分类号： H01L21/20 ,  H01L21/205 ,  H01S5/02 ,  H01L21/36

    CPC分类号： H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/0265 ,  H01S5/3202 ,  H01S2304/12

    摘要： A method of fabricating a gallium nitride-based semiconductor structure on a substrate includes the steps of forming a mask having at least one opening therein directly on the substrate, growing a buffer layer through the opening, and growing a layer of gallium nitride upwardly from the buffer layer and laterally across the mask. During growth of the gallium nitride from the mask, the vertical and horizontal growth rates of the gallium nitride layer are maintained at rates sufficient to prevent polycrystalline material nucleating on said mask from interrupting the lateral growth of the gallium nitride layer. In an alternative embodiment, the method includes forming at least one raised portion defining adjacent trenches in the substrate and forming a mask on the substrate, the mask having at least one opening over the upper surface of the raised portion. A buffer layer may be grown from the upper surface of the raised portion. The gallium nitride layer is then grown laterally by pendeoepitaxy over the trenches.

    摘要翻译： 在衬底上制造氮化镓基半导体结构的方法包括以下步骤：在衬底上直接形成具有至少一个开口的掩模，通过该开口生长缓冲层，并从其中向上生长一层氮化镓 缓冲层和横向穿过掩模。 在从掩模生长氮化镓期间，氮化镓层的垂直和水平生长速率保持在足以防止在所述掩模上成核的多晶材料中断氮化镓层横向生长的速率。 在替代实施例中，该方法包括形成限定衬底中相邻沟槽的至少一个凸起部分，并在衬底上形成掩模，该掩模在凸起部分的上表面上具有至少一个开口。 缓冲层可以从凸起部分的上表面生长。 然后氮化镓层通过在沟槽上的外延生长而横向生长。