公开(公告)号：US5865659A

公开(公告)日：1999-02-02

申请号：US660538

申请日：1996-06-07

Applicant: Paul N. Ludwig ,  Duane A. Haven ,  John M. Macaulay ,  Christopher J. Spindt ,  James M. Cleeves ,  N. Johan Knall

Inventor： Paul N. Ludwig ,  Duane A. Haven ,  John M. Macaulay ,  Christopher J. Spindt ,  James M. Cleeves ,  N. Johan Knall

IPC: H01J9/02 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J2329/00

Abstract: A gated electron-emitter having a lower non-insulating emitter region (42), an overlying insulating layer (44), and a gate layer (48A, 60A, 60B, 120A, or 180A/184) is fabricated by a process in which particles (46) are distributed over the insulating layer, the gate layer, a primary layer (50A, 62A, or 72) provided over the gate layer, a further layer (74) provided over the primary layer, or a pattern-transfer layer (182). The particles are utilized in defining gate openings (54, 66, 80, 122, or 186/188) through the gate layer. Spacer material is provided along the edges of the gate openings to form spacers (110A, 124A, 140, or 150B) but leave corresponding apertures (112A, 126A, 142, or 152) through the spacer material. The insulating layer is etched through the apertures to form dielectric openings (114, 128, 144, or 154) through the insulating layer. Emitter material is introduced into the dielectric openings to form electron-emissive elements (116B, 130A, 146A, or 156B) typically filamentary in shape.

Abstract translation: 具有较低非绝缘发射极区域（42），上覆绝缘层（44）和栅极层（48A，60A，60B，120A或180A / 184）的门控电子发射器通过以下工艺制造，其中 颗粒（46）分布在绝缘层上，栅极层，设置在栅极层上的主层（50A，62A或72），设置在主层上的另一层（74）或图案转移层 （182）。 这些颗粒用于通过栅极层限定栅极开口（54,66,80,122或186/188）。 隔板材料沿栅极开口的边缘设置以形成间隔物（110A，124A，140或150B），但通过间隔物料留下相应的孔（112A，126A，142或152）。 通过孔蚀刻绝缘层，以形成通过绝缘层的电介质开口（114,128,144或154）。 将发射体材料引入电介质开口以形成通常为丝状形状的电子发射元件（116B，130A，146A或156B）。

公开(公告)号：US5766446A

公开(公告)日：1998-06-16

申请号：US610729

申请日：1996-03-05

Applicant: Christopher J. Spindt ,  Gabriela S. Chakarova ,  Maria S. Nikolova ,  Peter C. Searson ,  Duane A. Haven ,  Nils Johan Knall ,  John M. Macaulay ,  Roger W. Barton

Inventor： Christopher J. Spindt ,  Gabriela S. Chakarova ,  Maria S. Nikolova ,  Peter C. Searson ,  Duane A. Haven ,  Nils Johan Knall ,  John M. Macaulay ,  Roger W. Barton

IPC: B81C1/00 ,  C25F3/14 ,  H01J9/02 ,  C25F3/00

CPC classification number: H01J9/025

Abstract: An electrochemical technique is employed for removing certain material from a partially finished structure without significantly chemically attacking certain other material of the same chemical type as the removed material. The partially finished structure contains a first electrically non-insulating layer (52C) consisting at least partially of first material, typically excess emitter material that accumulates during the deposition of the emitter material to form electron-emissive elements (52A) in an electron emitter, that overlies an electrically insulating layer (44). An electrically non-insulating member, such as an electron-emissive element, consisting at least partially of the first material is situated at least partly in an opening (50) extending through the insulating layer. With the partially finished structure so arranged, at least part of the first material of the first non-insulating layer is electrochemically removed such that the non-insulating member is exposed without significantly attacking the first material of the non-insulating member.

Abstract translation: 使用电化学技术从部分完成的结构中去除某些材料，而不会明显地化学侵蚀与除去的材料相同的化学类型的某些其它材料。 部分完成的结构包含至少部分由第一材料构成的第一非绝缘层（52C），通常是在发射体材料沉积期间积聚以形成电子发射体中的电子发射元件（52A）的过量发射极材料， 覆盖电绝缘层（44）。 至少部分由第一材料构成的电绝缘构件，例如电子发射元件至少部分地位于延伸穿过绝缘层的开口（50）中。 在部分完成的结构被布置的情况下，第一非绝缘层的第一材料的至少一部分被电化学去除，使得非绝缘构件暴露而不显着地侵害非绝缘构件的第一材料。

公开(公告)号：US5728435A

公开(公告)日：1998-03-17

申请号：US445618

申请日：1995-05-22

Applicant: Michael W. Geis ,  John M. Macaulay ,  Jonathan C. Twichell

Inventor： Michael W. Geis ,  John M. Macaulay ,  Jonathan C. Twichell

IPC: H01J1/14 ,  H01J1/304 ,  H05H1/24 ,  B05D5/12

CPC classification number: H01J1/14 ,  H01J1/304 ,  H01J2201/30426 ,  H01J2329/00

Abstract: A cathode structure is formed by a process in which a carbon-containing electron-emissive cathode is subjected to electronegative atoms that include oxygen and/or fluorine. The cathode is also subjected to atoms of electropositive metal, typically after being subjected to the atoms of oxygen and/or fluorine. The combination of the electropositive metal atoms and the electronegative atoms enhances the electron emissivity by reducing the work function.

Abstract translation: 通过其中含碳电子发射阴极经受包括氧和/或氟的电负性原子的方法形成阴极结构。 阴极还经受正电性金属原子，通常在经受氧和/或氟的原子之后。 正电性金属原子和电负性原子的组合通过降低功函数来增强电子发射率。

公开(公告)号：US5462467A

公开(公告)日：1995-10-31

申请号：US118490

申请日：1993-09-08

Applicant: John M. Macaulay ,  Peter C. Searson ,  Robert M. Duboc, Jr. ,  Christopher J. Spindt

Inventor： John M. Macaulay ,  Peter C. Searson ,  Robert M. Duboc, Jr. ,  Christopher J. Spindt

IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319 ,  Y10T428/2973 ,  Y10T428/298

Abstract: A field-emission structure suitable for large-area flat-panel televisions centers around an insulating porous layer (24A) that overlies a lower conductive region (22) situated over insulating material of a supporting substrate (20). Electron-emissive filaments (30) occupy pores (28) extending through the porous layer. A conductive gate layer (34A) through which openings (36) extend at locations centered on the filaments typically overlies the porous layer. Cavities (38) are usually provided in the porous layer along its upper surface at locations likewise centered on the filaments.In fabricating the structure, the pores are preferably formed by etching charged-particle tracks. Electrochemical deposition is employed to selectively create the filaments in the pores. Self-alignment of the gate openings to the filaments is achieved with charged-particle track etching and/or further electrochemical processing.

Abstract translation: 适用于大面积平板电视的场发射结构围绕位于位于支撑衬底（20）的绝缘材料之上的下导电区域（22）的绝缘多孔层（24A）周围。 电子发射丝（30）占据延伸穿过多孔层的孔（28）。 开口（36）通过所述导电栅极层（34A）延伸穿过长丝的位置，通常覆盖在多孔层上。 通常在多孔层中沿着其上表面在同样位于细丝上的位置处设置空腔（38）。 在制造结构时，优选通过蚀刻带电粒子迹线形成孔。 使用电化学沉积来选择性地在孔中产生细丝。 通过带电粒子轨迹蚀刻和/或进一步的电化学处理实现了栅极开口对长丝的自对准。