公开(公告)号：US20090140423A1

公开(公告)日：2009-06-04

申请号：US11947070

申请日：2007-11-29

Applicant: Luc Belanger ,  Srinivasa S.N. Reddy ,  Da-Yuan Shih ,  Brian R. Sundlof

Inventor： Luc Belanger ,  Srinivasa S.N. Reddy ,  Da-Yuan Shih ,  Brian R. Sundlof

IPC: H01L23/48 ,  H01L21/44

CPC classification number: H01L24/13 ,  C22C19/007 ,  C22C19/03 ,  C23C14/025 ,  C23C14/165 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/0554 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13006 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/013

Abstract: A a metallic adhesion layer is formed on a last level metal plate exposed in an opening of a passivation layer. A Ni—Ti alloy in which the weight percentage of Ti is from about 6.5% to about 30% is deposited by sputtering onto the metallic adhesion layer to form an underbump metallic layer. A wetting layer comprising Cu or Ag or Au is deposited on top of Ni—Ti layer by sputtering. A C4 ball is applied to a surface of the wetting layer for C4 processing. The sputter deposition of the Ni—Ti alloy offers economic and performance advantages relative to known methods in the art since the Ni—Ti alloy in the composition of the present invention is non-magnetic and easy to sputter, and the consumption of the inventive Ni—Ti alloy is limited during C4 processing. Also, Sn in the solder reacts uniformly with both Ni and Ti and the consumption of Ni—Ti by Sn solder is less than that for pure Ni.

Abstract translation: 在暴露在钝化层的开口中的最后一级金属板上形成金属粘合层。 其中Ti的重量百分数为约6.5％至约30％的Ni-Ti合金通过溅射沉积到金属粘合层上以形成底部金属层。 通过溅射将包含Cu或Ag或Au的润湿层沉积在Ni-Ti层的顶部上。 将C4球施加到用于C4加工的润湿层的表面。 Ni-Ti合金的溅射沉积相对于本领域已知的方法提供经济和性能优点，因为本发明组合物中的Ni-Ti合金是非磁性的并且易于溅射，并且本发明的Ni -Ti合金在C4加工过程中受到限制。 此外，焊料中的Sn与Ni和Ti均匀地反应，Sn焊料的Ni-Ti的消耗小于纯Ni的消耗。

公开(公告)号：US20090134016A1

公开(公告)日：2009-05-28

申请号：US11946231

申请日：2007-11-28

Applicant: Luc Belanger ,  Srinivasa S.N. Reddy ,  Brian R. Sundlof

Inventor： Luc Belanger ,  Srinivasa S.N. Reddy ,  Brian R. Sundlof

IPC: C23C14/00

CPC classification number: H01L24/13 ,  C22C19/03 ,  C23C14/025 ,  C23C14/165 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/0554 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11334 ,  H01L2224/13006 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/00014 ,  H01L2924/013

Abstract: A metallic adhesion layer is formed on a last level metal plate exposed in an opening of a passivation layer. A Ni—Cu alloy in which the weight percentage of Ni is from about 50% to about 70% is deposited by sputtering onto the metallic adhesion layer to form an underbump metallic layer. Optionally, a wetting layer comprising Cu or Au may be deposited by sputtering. A C4 ball is applied to a surface of the underbump metallic layer comprising the Ni—Cu alloy or the wetting layer for C4 processing. The sputter deposition of the Ni—Cu alloy offers economic advantages relative to known methods in the art since the Ni—Cu alloy in the composition of the present invention is non-magnetic and easy to sputter, and the consumption of the inventive Ni—Cu alloy is limited during C4 processing.

Abstract translation: 在暴露在钝化层的开口中的最后一级金属板上形成金属粘附层。 通过溅射将Ni的重量百分比为约50％至约70％的Ni-Cu合金沉积到金属粘合层上以形成下凸块金属层。 任选地，可以通过溅射沉积包含Cu或Au的润湿层。 将C4球施加到包含Ni-Cu合金或用于C4加工的润湿层的底部基底金属层的表面上。 Ni-Cu合金的溅射沉积相对于本领域已知的方法提供经济优势，因为本发明组合物中的Ni-Cu合金是非磁性的并且易于溅射，并且本发明的Ni-Cu C4加工时合金有限。