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公开(公告)号：US20090140423A1
公开(公告)日：2009-06-04
申请号：US11947070
申请日：2007-11-29
CPC分类号： H01L24/13 , C22C19/007 , C22C19/03 , C23C14/025 , C23C14/165 , H01L24/11 , H01L2224/0401 , H01L2224/05001 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/0554 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/13006 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2224/13099 , H01L2924/00014 , H01L2924/013
摘要： A a metallic adhesion layer is formed on a last level metal plate exposed in an opening of a passivation layer. A Ni—Ti alloy in which the weight percentage of Ti is from about 6.5% to about 30% is deposited by sputtering onto the metallic adhesion layer to form an underbump metallic layer. A wetting layer comprising Cu or Ag or Au is deposited on top of Ni—Ti layer by sputtering. A C4 ball is applied to a surface of the wetting layer for C4 processing. The sputter deposition of the Ni—Ti alloy offers economic and performance advantages relative to known methods in the art since the Ni—Ti alloy in the composition of the present invention is non-magnetic and easy to sputter, and the consumption of the inventive Ni—Ti alloy is limited during C4 processing. Also, Sn in the solder reacts uniformly with both Ni and Ti and the consumption of Ni—Ti by Sn solder is less than that for pure Ni.
摘要翻译： 在暴露在钝化层的开口中的最后一级金属板上形成金属粘合层。 其中Ti的重量百分数为约6.5％至约30％的Ni-Ti合金通过溅射沉积到金属粘合层上以形成底部金属层。 通过溅射将包含Cu或Ag或Au的润湿层沉积在Ni-Ti层的顶部上。 将C4球施加到用于C4加工的润湿层的表面。 Ni-Ti合金的溅射沉积相对于本领域已知的方法提供经济和性能优点，因为本发明组合物中的Ni-Ti合金是非磁性的并且易于溅射，并且本发明的Ni -Ti合金在C4加工过程中受到限制。 此外，焊料中的Sn与Ni和Ti均匀地反应，Sn焊料的Ni-Ti的消耗小于纯Ni的消耗。
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2.发明申请UNDERBUMP METALLURGY EMPLOYING SPUTTER-DEPOSITED NICKEL TITANIUM COPPER ALLOY 审中-公开金属冶金采用溅射沉积镍合金铜合金公开(公告)号：US20090134016A1
公开(公告)日：2009-05-28
申请号：US11946231
申请日：2007-11-28
IPC分类号： C23C14/00
CPC分类号： H01L24/13 , C22C19/03 , C23C14/025 , C23C14/165 , H01L24/11 , H01L2224/0401 , H01L2224/05001 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/0554 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/11334 , H01L2224/13006 , H01L2224/13099 , H01L2224/13111 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/00014 , H01L2924/013
摘要： A metallic adhesion layer is formed on a last level metal plate exposed in an opening of a passivation layer. A Ni—Cu alloy in which the weight percentage of Ni is from about 50% to about 70% is deposited by sputtering onto the metallic adhesion layer to form an underbump metallic layer. Optionally, a wetting layer comprising Cu or Au may be deposited by sputtering. A C4 ball is applied to a surface of the underbump metallic layer comprising the Ni—Cu alloy or the wetting layer for C4 processing. The sputter deposition of the Ni—Cu alloy offers economic advantages relative to known methods in the art since the Ni—Cu alloy in the composition of the present invention is non-magnetic and easy to sputter, and the consumption of the inventive Ni—Cu alloy is limited during C4 processing.
摘要翻译： 在暴露在钝化层的开口中的最后一级金属板上形成金属粘附层。 通过溅射将Ni的重量百分比为约50％至约70％的Ni-Cu合金沉积到金属粘合层上以形成下凸块金属层。 任选地，可以通过溅射沉积包含Cu或Au的润湿层。 将C4球施加到包含Ni-Cu合金或用于C4加工的润湿层的底部基底金属层的表面上。 Ni-Cu合金的溅射沉积相对于本领域已知的方法提供经济优势，因为本发明组合物中的Ni-Cu合金是非磁性的并且易于溅射，并且本发明的Ni-Cu C4加工时合金有限。
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公开(公告)号：US20100200271A1
公开(公告)日：2010-08-12
申请号：US12704592
申请日：2010-02-12
申请人： Charles L. Arvin , Alexandre Blander , Peter J. Brofman , Donald W. Henderson , Gareth G. Hougham , Hsichang Liu , Eric D. Perfecto , Srinivasa S.N. Reddy , Krystyna W. Semkow , Kamalesh K. Srivastava , Brian R. Sundlof , Julien Sylvestre , Renee L. Weisman
发明人： Charles L. Arvin , Alexandre Blander , Peter J. Brofman , Donald W. Henderson , Gareth G. Hougham , Hsichang Liu , Eric D. Perfecto , Srinivasa S.N. Reddy , Krystyna W. Semkow , Kamalesh K. Srivastava , Brian R. Sundlof , Julien Sylvestre , Renee L. Weisman
CPC分类号： H01B1/02 , B23K35/0244 , B23K35/262 , B23K35/36 , B23K35/3602 , B82Y30/00 , C22C13/00 , H01B13/00 , H01L23/49866 , H01L2924/0002 , H05K3/3436 , H05K3/3463 , H05K2201/0209 , H05K2201/0257 , Y10T29/49117 , H01L2924/00
摘要： In one embodiment of the present invention, inert nano-sized particles having dimensions from 1 nm to 1,000 nm are added into a solder ball. The inert nano-sized particles may comprise metal oxides, metal nitrides, metal carbides, metal borides, etc. The inert nano-sized particles may be a single compound, or may be a metallic material having a coating of a different material. In another embodiment of the present invention, a small quantity of at least one elemental metal that forms stable high melting intermetallic compound with tin is added to a solder ball. The added at least one elemental metal forms precipitates of intermetallic compounds with tin, which are dispersed as fine particles in the solder.
摘要翻译： 在本发明的一个实施方案中，将尺寸为1nm至1000nm的惰性纳米尺寸颗粒加入到焊球中。 惰性纳米尺寸颗粒可以包括金属氧化物，金属氮化物，金属碳化物，金属硼化物等。惰性纳米尺寸颗粒可以是单一化合物，或者可以是具有不同材料的涂层的金属材料。 在本发明的另一个实施方案中，将少量与锡形成稳定的高熔点金属间化合物的元素金属添加到焊料球中。 添加的至少一种元素金属与锡形成金属间化合物的沉淀物，其作为细颗粒分散在焊料中。
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4.发明申请METHOD OF FORMING UNDERBUMP METALLURGY STRUCTURE EMPLOYING SPUTTER-DEPOSITED NICKEL COPPER ALLOY 审中-公开形成金属结构的方法使用溅射沉积镍合金公开(公告)号：US20120202343A1
公开(公告)日：2012-08-09
申请号：US13448500
申请日：2012-04-17
IPC分类号： H01L21/44
CPC分类号： H01L24/13 , C22C19/03 , C23C14/025 , C23C14/165 , H01L24/11 , H01L2224/0401 , H01L2224/05001 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/0554 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/11334 , H01L2224/13006 , H01L2224/13099 , H01L2224/13111 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/00014 , H01L2924/013
摘要： A metallic adhesion layer is formed on a last level metal plate exposed in an opening of a passivation layer. A Ni—Cu alloy in which the weight percentage of Ni is from about 50% to about 70% is deposited by sputtering onto the metallic adhesion layer to form an underbump metallic layer. Optionally, a wetting layer comprising Cu or Au may be deposited by sputtering. A C4 ball is applied to a surface of the underbump metallic layer comprising the Ni—Cu alloy or the wetting layer for C4 processing. The sputter deposition of the Ni—Cu alloy offers economic advantages relative to known methods in the art since the Ni—Cu alloy in the composition of the present invention is non-magnetic and easy to sputter, and the consumption of the inventive Ni—Cu alloy is limited during C4 processing.
摘要翻译： 在暴露在钝化层的开口中的最后一级金属板上形成金属粘附层。 通过溅射将Ni的重量百分比为约50％至约70％的Ni-Cu合金沉积到金属粘合层上以形成下凸块金属层。 任选地，可以通过溅射沉积包含Cu或Au的润湿层。 将C4球施加到包含Ni-Cu合金或用于C4加工的润湿层的底部基底金属层的表面上。 Ni-Cu合金的溅射沉积相对于本领域已知的方法提供经济优势，因为本发明组合物中的Ni-Cu合金是非磁性的并且易于溅射，并且本发明的Ni-Cu C4加工时合金有限。
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公开(公告)号：US08493746B2
公开(公告)日：2013-07-23
申请号：US12704592
申请日：2010-02-12
申请人： Charles L. Arvin , Alexandre Blander , Peter J. Brofman , Donald W. Henderson , Gareth G. Hougham , Hsichang Liu , Eric D. Perfecto , Srinivasa S. N. Reddy , Krystyna W. Semkow , Kamalesh K. Srivastava , Brian R. Sundlof , Julien Sylvestre , Renee L. Weisman
发明人： Charles L. Arvin , Alexandre Blander , Peter J. Brofman , Donald W. Henderson , Gareth G. Hougham , Hsichang Liu , Eric D. Perfecto , Srinivasa S. N. Reddy , Krystyna W. Semkow , Kamalesh K. Srivastava , Brian R. Sundlof , Julien Sylvestre , Renee L. Weisman
CPC分类号： H01B1/02 , B23K35/0244 , B23K35/262 , B23K35/36 , B23K35/3602 , B82Y30/00 , C22C13/00 , H01B13/00 , H01L23/49866 , H01L2924/0002 , H05K3/3436 , H05K3/3463 , H05K2201/0209 , H05K2201/0257 , Y10T29/49117 , H01L2924/00
摘要： In one embodiment of the present invention, inert nano-sized particles having dimensions from 1 nm to 1,000 nm are added into a solder ball. The inert nano-sized particles may comprise metal oxides, metal nitrides, metal carbides, metal borides, etc. The inert nano-sized particles may be a single compound, or may be a metallic material having a coating of a different material. In another embodiment of the present invention, a small quantity of at least one elemental metal that forms stable high melting intermetallic compound with tin is added to a solder ball. The added at least one elemental metal forms precipitates of intermetallic compounds with tin, which are dispersed as fine particles in the solder.
摘要翻译： 在本发明的一个实施方案中，将尺寸为1nm至1000nm的惰性纳米尺寸颗粒加入到焊球中。 惰性纳米尺寸颗粒可以包括金属氧化物，金属氮化物，金属碳化物，金属硼化物等。惰性纳米尺寸颗粒可以是单一化合物，或者可以是具有不同材料的涂层的金属材料。 在本发明的另一个实施方案中，将少量与锡形成稳定的高熔点金属间化合物的元素金属添加到焊料球中。 添加的至少一种元素金属与锡形成金属间化合物的沉淀物，其作为细颗粒分散在焊料中。
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6.发明申请SELF ORIENTING MICRO PLATES OF THERMALLY CONDUCTING MATERIAL AS COMPONENT IN THERMAL PASTE OR ADHESIVE 有权自热导热材料作为热熔胶或粘合剂中的组分的微板公开(公告)号：US20120211159A1
公开(公告)日：2012-08-23
申请号：US11758457
申请日：2007-06-05
CPC分类号： H01L23/3733 , B82Y30/00 , H01L23/373 , H01L23/3736 , H01L23/40 , H01L2224/16225 , H01L2924/00011 , H01L2924/00014 , Y10S977/788 , Y10T156/10 , Y10T428/24994 , H01L2224/0401
摘要： The present invention relates generally to thermally-conductive pastes for use with integrated circuits, and particularly, but not by way of limitation, to self-orienting microplates of graphite.
摘要翻译： 本发明一般涉及用于集成电路的导热膏，特别是但不限于石墨的自取向微孔板。
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7.发明申请Solder Interconnect with Non-Wettable Sidewall Pillars and Methods of Manufacture 有权焊接与不可湿润的侧壁支柱和制造方法互连公开(公告)号：US20110193218A1
公开(公告)日：2011-08-11
申请号：US12700863
申请日：2010-02-05
申请人： Charles L. Arvin , Raschid J. Bezama , Timothy H. Daubenspeck , Jeffrey P. Gambino , Christopher D. Muzzy , David L. Questad , Wolfgang Sauter , Timothy D. Sullivan , Brian R. Sundlof
发明人： Charles L. Arvin , Raschid J. Bezama , Timothy H. Daubenspeck , Jeffrey P. Gambino , Christopher D. Muzzy , David L. Questad , Wolfgang Sauter , Timothy D. Sullivan , Brian R. Sundlof
IPC分类号： H01L23/498 , H01L21/768
CPC分类号： H01L24/13 , H01L23/49811 , H01L24/11 , H01L24/16 , H01L2224/0401 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/10126 , H01L2224/11334 , H01L2224/1146 , H01L2224/1147 , H01L2224/1182 , H01L2224/119 , H01L2224/13017 , H01L2224/13018 , H01L2224/1308 , H01L2224/13083 , H01L2224/13084 , H01L2224/13101 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13565 , H01L2224/1357 , H01L2224/13687 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/3841 , H01L2924/00014 , H01L2924/01024 , H01L2924/01026 , H01L2924/01032 , H01L2924/00012 , H01L2924/00
摘要： A solder interconnect structure is provided with non-wettable sidewalls and methods of manufacturing the same. The method includes forming a nickel or nickel alloy pillar on an underlying surface. The method further includes modifying the sidewall of the nickel or nickel alloy pillar to prevent solder wetting on the sidewall.
摘要翻译： 焊接互连结构设置有不可润湿的侧壁及其制造方法。 该方法包括在下面的表面上形成镍或镍合金支柱。 该方法还包括修改镍或镍合金柱的侧壁以防止在侧壁上的焊料润湿。
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8.发明申请SELF ORIENTING MICRO PLATES OF THERMALLY CONDUCTING MATERIAL AS COMPONENT IN THERMAL PASTE OR ADHESIVE 有权自热导热材料作为热熔胶或粘合剂中的组分的微板公开(公告)号：US20080202386A1
公开(公告)日：2008-08-28
申请号：US12039309
申请日：2008-02-28
CPC分类号： H01L23/3733 , B82Y30/00 , H01L23/373 , H01L23/3736 , H01L23/40 , H01L2224/16225 , H01L2924/00011 , H01L2924/00014 , Y10S977/788 , Y10T156/10 , Y10T428/24994 , H01L2224/0401
摘要： The present invention relates generally to thermally-conductive pastes for use with integrated circuits, and particularly, but not by way of limitation, to self-orienting microplates of graphite.
摘要翻译： 本发明一般涉及用于集成电路的导热膏，特别是但不限于石墨的自取向微孔板。
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公开(公告)号：US20080180927A1
公开(公告)日：2008-07-31
申请号：US11627430
申请日：2007-01-26
CPC分类号： H05K3/3436 , H01L23/13 , H01L23/49805 , H01L23/49811 , H01L2924/0002 , H05K3/28 , H05K3/325 , H05K3/4007 , H05K3/4015 , H05K2201/0367 , H05K2201/09745 , H05K2201/1059 , H05K2201/10719 , H05K2203/167 , Y02P70/613 , Y10T29/49126 , Y10T29/4913 , H01L2924/00
摘要： A circuit package is provided. The circuit package includes a plurality of electrically conductive pads located on a bottom surface of the circuit package, wherein at least one pad of the plurality of bottom surface pads has a recession for receiving an electrically conductive protrusion located on a substrate to which the circuit package is to be mounted.
摘要翻译： 提供电路封装。 电路封装包括位于电路封装的底表面上的多个导电焊盘，其中多个底表面焊盘中的至少一个焊盘具有用于接收位于基板上的导电突起的凹陷，电路封装 将被安装。
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10.发明授权Method and apparatus for forming stacked die and substrate structures for increased packing density 有权用于形成堆叠的管芯和衬底结构以增加堆积密度的方法和装置公开(公告)号：US07250675B2
公开(公告)日：2007-07-31
申请号：US10908277
申请日：2005-05-05
IPC分类号： H01L23/34
CPC分类号： H01L25/0657 , H01L2224/16 , H01L2224/73253 , H01L2225/06517 , H01L2225/0652 , H01L2225/06572 , H01L2225/06589 , H01L2924/00011 , H01L2924/00014 , H01L2924/16152 , H01L2924/1627 , H01L2924/3025 , H01L2224/0401
摘要： A stacked semiconductor apparatus has at least one die attached to a first side of a carrier substrate. A first circuitized substrate is attached to the first side of the carrier substrate and overlying the at least one die in a manner such that the first circuitized substrate serves as an electrical interconnection device and a heat spreading lid. The first circuitized substrate is further configured so as to facilitate cooling of the at least one die by at least a cross flow of a cooling medium therethrough.
摘要翻译： 叠层半导体装置具有至少一个附着在载体基板的第一侧的管芯。 第一电路化基板被附接到载体基板的第一侧并且以使得第一电路化基板用作电互连装置和散热盖的方式覆盖至少一个管芯。 第一电路化基板被进一步构造成便于通过至少一个冷却介质的横流而使至少一个管芯冷却。
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