公开(公告)号：US20090140423A1

公开(公告)日：2009-06-04

申请号：US11947070

申请日：2007-11-29

申请人： Luc Belanger ,  Srinivasa S.N. Reddy ,  Da-Yuan Shih ,  Brian R. Sundlof

发明人： Luc Belanger ,  Srinivasa S.N. Reddy ,  Da-Yuan Shih ,  Brian R. Sundlof

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L24/13 ,  C22C19/007 ,  C22C19/03 ,  C23C14/025 ,  C23C14/165 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/0554 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13006 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/013

摘要： A a metallic adhesion layer is formed on a last level metal plate exposed in an opening of a passivation layer. A Ni—Ti alloy in which the weight percentage of Ti is from about 6.5% to about 30% is deposited by sputtering onto the metallic adhesion layer to form an underbump metallic layer. A wetting layer comprising Cu or Ag or Au is deposited on top of Ni—Ti layer by sputtering. A C4 ball is applied to a surface of the wetting layer for C4 processing. The sputter deposition of the Ni—Ti alloy offers economic and performance advantages relative to known methods in the art since the Ni—Ti alloy in the composition of the present invention is non-magnetic and easy to sputter, and the consumption of the inventive Ni—Ti alloy is limited during C4 processing. Also, Sn in the solder reacts uniformly with both Ni and Ti and the consumption of Ni—Ti by Sn solder is less than that for pure Ni.

摘要翻译： 在暴露在钝化层的开口中的最后一级金属板上形成金属粘合层。 其中Ti的重量百分数为约6.5％至约30％的Ni-Ti合金通过溅射沉积到金属粘合层上以形成底部金属层。 通过溅射将包含Cu或Ag或Au的润湿层沉积在Ni-Ti层的顶部上。 将C4球施加到用于C4加工的润湿层的表面。 Ni-Ti合金的溅射沉积相对于本领域已知的方法提供经济和性能优点，因为本发明组合物中的Ni-Ti合金是非磁性的并且易于溅射，并且本发明的Ni -Ti合金在C4加工过程中受到限制。 此外，焊料中的Sn与Ni和Ti均匀地反应，Sn焊料的Ni-Ti的消耗小于纯Ni的消耗。

公开(公告)号：US07703661B2

公开(公告)日：2010-04-27

申请号：US11752382

申请日：2007-05-23

申请人： Gareth G. Hougham ,  Kamalesh K. Srivastava ,  Sung K. Kang ,  Da-Yuan Shih ,  Brian R. Sundlof ,  S. Jay Chey ,  Donald W. Henderson ,  David R. Di Milia ,  Richard P. Ferlita ,  Roy A. Carruthers

发明人： Gareth G. Hougham ,  Kamalesh K. Srivastava ,  Sung K. Kang ,  Da-Yuan Shih ,  Brian R. Sundlof ,  S. Jay Chey ,  Donald W. Henderson ,  David R. Di Milia ,  Richard P. Ferlita ,  Roy A. Carruthers

IPC分类号： B23K35/24

CPC分类号： B23K1/19 ,  B23K35/262 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/0215

摘要： Briefly, a novel material process is disclosed wherein one or more nucleation modifiers are added, in trace amounts, to a lead-free tin-rich solder alloy to produce a solder composition with reduced or suppressed undercooling temperature characteristics. The modifier being a substance which facilitates the reduction of extreme anisotropic properties associated with body-centered-tetragonal tin based lead-free solder. The addition of the nucleation modifiers to the solder alloy does not materially effect the solder composition's melting point. As such, balls of solder with the nucleated composition freeze while other solder balls within the array remain in the melt. This effectively enables one substrate to be pinned to another substrate by one or more predetermined solder balls to secure the package while the remaining solder joints are in the liquid state.

摘要翻译： 简而言之，公开了一种新颖的材料方法，其中将一种或多种成核改性剂以痕量添加到无铅富锡焊料合金中以产生具有降低或抑制的过冷却温度特性的焊料组合物。 该改性剂是有助于减少与体心四方锡锡基无铅焊料相关的极端各向异性的物质。 将成核改性剂添加到焊料合金中不会实质上影响焊料组合物的熔点。 因此，具有成核组合物的焊料球冻结，而阵列内的其它焊球保持在熔体中。 这有效地使一个基板通过一个或多个预定的焊球被固定到另一个基板，以固定封装，而剩余的焊点处于液态。

公开(公告)号：US20080290142A1

公开(公告)日：2008-11-27

申请号：US11752382

申请日：2007-05-23

申请人： Gareth G. Hougham ,  Kamalesh K. Srivastava ,  Sung K. Kang ,  Da-Yuan Shih ,  Brian R. Sundlof ,  S. Jay Chey ,  Donald W. Henderson ,  David R. Di Milia ,  Richard P. Ferlita ,  Roy A. Carruthers

发明人： Gareth G. Hougham ,  Kamalesh K. Srivastava ,  Sung K. Kang ,  Da-Yuan Shih ,  Brian R. Sundlof ,  S. Jay Chey ,  Donald W. Henderson ,  David R. Di Milia ,  Richard P. Ferlita ,  Roy A. Carruthers

IPC分类号： B23K35/24 ,  B23K101/36 ,  B23K31/02

CPC分类号： B23K1/19 ,  B23K35/262 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/0215

摘要： Briefly, a novel material process is disclosed wherein one or more nucleation modifiers are added, in trace amounts, to a lead-free tin-rich solder alloy to produce a solder composition with reduce or suppressed undercooling temperature characteristics. The modifier being a substance which facilitates the reduction of extreme anisotropic properties associated with body-centered-tetragonal tin based lead-free solder. The addition of the nucleation modifiers to the solder alloy does not materially effect the solder composition's melting point. As such, balls of solder with the nucleated composition freeze while other solder balls within the array remain in the melt. This effectively enables one substrate to be pinned to another substrate by one or more predetermined solder balls to secure the package while the remaining solder joints are in the liquid state. Further, the addition of a trace amount of nucleation sites within the composition facilitates control over the number, size, and orientations of primary intermetallic compounds in tin rich crystallite grains. Moreover, trace amounts of one or more solid and/or insoluble nucleating modifiers within a given volume of solder reduces the size of average crystallites within the composition.

摘要翻译： 简而言之，公开了一种新颖的材料方法，其中将一种或多种成核改性剂以微量添加到无铅富锡焊料合金中以产生具有降低或抑制的过冷温度特性的焊料组合物。 该改性剂是有助于减少与体心四方锡锡基无铅焊料相关的极端各向异性的物质。 将成核改性剂添加到焊料合金中不会实质上影响焊料组合物的熔点。 因此，具有成核组合物的焊料球冻结，而阵列内的其它焊球保持在熔体中。 这有效地使一个基板通过一个或多个预定的焊球被固定到另一个基板，以固定封装，而剩余的焊点处于液态。 此外，在组合物中添加微量的成核位点有助于控制富锡微晶颗粒中初级金属间化合物的数量，尺寸和取向。 此外，在给定体积的焊料中痕量的一种或多种固态和/或不溶性成核改性剂减少了组合物内平均微晶的尺寸。

公开(公告)号：US07784669B2

公开(公告)日：2010-08-31

申请号：US12536122

申请日：2009-08-05

申请人： Gareth G. Hougham ,  Kamalesh K. Srivastava ,  Sung K. Kang ,  Da-Yuan Shih ,  Brian R. Sundlof ,  S. Jay Chey ,  Donald W. Henderson ,  David R. Di Milia ,  Richard P. Ferlita ,  Roy A. Carruthers

发明人： Gareth G. Hougham ,  Kamalesh K. Srivastava ,  Sung K. Kang ,  Da-Yuan Shih ,  Brian R. Sundlof ,  S. Jay Chey ,  Donald W. Henderson ,  David R. Di Milia ,  Richard P. Ferlita ,  Roy A. Carruthers

IPC分类号： B23K35/24

CPC分类号： B23K1/19 ,  B23K35/262 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/0215

摘要： Briefly, a novel material process is disclosed wherein one or more nucleation modifiers are added, in trace amounts, to a lead-free tin-rich solder alloy to produce a solder composition with reduce or suppressed undercooling temperature characteristics. The modifier being a substance which facilitates the reduction of extreme anisotropic properties associated with body-centered-tetragonal tin based lead-free solder. The addition of the nucleation modifiers to the solder alloy does not materially effect the solder composition's melting point. As such, balls of solder with the nucleated composition freeze while other solder balls within the array remain in the melt. This effectively enables one substrate to be pinned to another substrate by one or more predetermined solder balls to secure the package while the remaining solder joints are in the liquid state. Further, the addition of a trace amount of nucleation sites within the composition facilitates control over the number, size, and orientations of primary intermetallic compounds in tin rich crystallite grains. Moreover, trace amounts of one or more solid and/or insoluble nucleating modifiers within a given volume of solder reduces the size of average crystallites within the composition.

摘要翻译： 简而言之，公开了一种新颖的材料方法，其中将一种或多种成核改性剂以微量添加到无铅富锡焊料合金中以产生具有降低或抑制的过冷温度特性的焊料组合物。 该改性剂是有助于减少与体心四方锡锡基无铅焊料相关的极端各向异性的物质。 将成核改性剂添加到焊料合金中不会实质上影响焊料组合物的熔点。 因此，具有成核组合物的焊料球冻结，而阵列内的其它焊球保持在熔体中。 这有效地使一个基板通过一个或多个预定的焊球被固定到另一个基板，以固定封装，而剩余的焊点处于液态。 此外，在组合物中添加微量的成核位点有助于控制富锡微晶颗粒中初级金属间化合物的数量，尺寸和取向。 此外，在给定体积的焊料中痕量的一种或多种固态和/或不溶性成核改性剂减少了组合物内平均微晶的尺寸。

公开(公告)号：US07932169B2

公开(公告)日：2011-04-26

申请号：US12587301

申请日：2009-10-05

申请人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valérie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K Srivastava ,  Michael J. Sullivan

发明人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valérie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K Srivastava ,  Michael J. Sullivan

IPC分类号： H01L21/44

CPC分类号： H01L24/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/114 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2224/13099

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限流冶金，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US20080157395A1

公开(公告)日：2008-07-03

申请号：US11616919

申请日：2006-12-28

申请人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valerie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K. Srivastava ,  Michael J. Sullivan

发明人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valerie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K. Srivastava ,  Michael J. Sullivan

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L24/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/114 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2224/13099

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限流冶金，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US08314500B2

公开(公告)日：2012-11-20

申请号：US11616919

申请日：2006-12-28

申请人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valérie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K Srivastava ,  Michael J. Sullivan

发明人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valérie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K Srivastava ,  Michael J. Sullivan

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/114 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2224/13099

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限流冶金，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US20050263571A1

公开(公告)日：2005-12-01

申请号：US10857988

申请日：2004-05-30

申请人： Luc Belanger ,  Guy Brouillette ,  Stephen Buchwalter ,  Peter Gruber ,  Hideo Kimura ,  Jean-Luc Landreville ,  Frederic Manurer ,  Marc Montminy ,  Valerie Oberson ,  Da-Yuan Shih ,  Stephane St-Onge ,  Michel Turgeon ,  Takeshi Yamada

发明人： Luc Belanger ,  Guy Brouillette ,  Stephen Buchwalter ,  Peter Gruber ,  Hideo Kimura ,  Jean-Luc Landreville ,  Frederic Manurer ,  Marc Montminy ,  Valerie Oberson ,  Da-Yuan Shih ,  Stephane St-Onge ,  Michel Turgeon ,  Takeshi Yamada

IPC分类号： B23K3/06 ,  B23K31/02 ,  H05K3/34

CPC分类号： B23K3/0623 ,  H05K3/3457 ,  H05K2203/0113 ,  H05K2203/0126 ,  H05K2203/0338 ,  H05K2203/1121

摘要： A method and apparatus for forming solder bumps by molten solder deposition into cavity arrays in a substrate immediately followed by solidification of molten solder such that precise replication of cavity volumes is consistently achieved in formed solder bump arrays. Various solder filling problems, such as those caused by surface tension and oxidation effects, are overcome by a combination of narrow molten Solder dispense slots and solidification of dispensed molten solder.

摘要翻译： 一种用于通过熔融焊料沉积形成焊料凸块的方法和装置，紧接在熔融焊料的固化之后，立即在形成的焊料凸块阵列中实现空腔体积的精确复制。 各种焊料填充问题，例如由表面张力和氧化作用引起的焊料填充问题，都是通过组合窄熔融焊料分配槽和分散的熔融焊料的固化来克服的。

公开(公告)号：US20100062597A1

公开(公告)日：2010-03-11

申请号：US12587301

申请日：2009-10-05

申请人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valérie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K. Srivastava ,  Michael J. Sullivan

发明人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valérie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K. Srivastava ,  Michael J. Sullivan

IPC分类号： H01L21/60

CPC分类号： H01L24/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/114 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2224/13099

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限流冶金，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US09230932B2

公开(公告)日：2016-01-05

申请号：US13370127

申请日：2012-02-09

申请人： Chen-Hua Yu ,  Da-Yuan Shih

发明人： Chen-Hua Yu ,  Da-Yuan Shih

IPC分类号： H01L23/544 ,  H01L23/48 ,  H01L23/00

CPC分类号： H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/45 ,  H01L24/49 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/05012 ,  H01L2224/05013 ,  H01L2224/05014 ,  H01L2224/05015 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05583 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/1131 ,  H01L2224/1134 ,  H01L2224/114 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1161 ,  H01L2224/11616 ,  H01L2224/11825 ,  H01L2224/11849 ,  H01L2224/13011 ,  H01L2224/13012 ,  H01L2224/13014 ,  H01L2224/13076 ,  H01L2224/13078 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13664 ,  H01L2224/13671 ,  H01L2224/13672 ,  H01L2224/1601 ,  H01L2224/16237 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81815 ,  H01L2924/15787 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/00012 ,  H01L2224/10125 ,  H01L2224/10155 ,  H01L2924/00

摘要： A system and method for preventing cracks is provided. An embodiment comprises placing crack stoppers into a connection between a semiconductor die and a substrate. The crack stoppers may be in the shape of hollow or solid cylinders and may be placed so as to prevent any cracks from propagating through the crack stoppers.

摘要翻译： 提供一种用于防止裂纹的系统和方法。 一个实施例包括将裂缝塞子放置在半导体管芯和衬底之间的连接中。 裂缝止动器可以是中空或实心圆筒的形状，并且可以放置成防止任何裂纹通过裂缝塞子传播。