公开(公告)号：US09202822B2

公开(公告)日：2015-12-01

申请号：US13316604

申请日：2011-12-12

申请人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Hitomi Sato ,  Yuhei Sato

发明人： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Hitomi Sato ,  Yuhei Sato

IPC分类号： H01L27/12 ,  H01L29/49 ,  H01L29/786

CPC分类号： H01L29/4908 ,  H01L21/28088 ,  H01L21/288 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/7869

摘要： To manufacture a transistor whose threshold voltage is controlled without using a backgate electrode, a circuit for controlling the threshold voltage, and an impurity introduction method. To manufacture a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption using the transistor. A gate electrode including a tungsten oxide film whose composition is controlled is used. The composition or the like is adjusted by a film formation method of the tungsten oxide film, whereby the work function can be controlled. By using the tungsten oxide film whose work function is controlled as part of the gate electrode, the threshold of the transistor can be controlled. Using the transistor whose threshold voltage is controlled, a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption can be manufactured.

摘要翻译： 制造在不使用背栅电极的情况下控制阈值电压的晶体管，用于控制阈值电压的电路和杂质导入方法。 使用晶体管制造具有良好的电特性，高可靠性和低功耗的半导体器件。 使用包含其组成被控制的氧化钨膜的栅电极。 通过氧化钨膜的成膜方法调整组合物等，由此可以控制功函数。 通过使用功函数被控制为栅电极的一部分的氧化钨膜，可以控制晶体管的阈值。 通过使用阈值电压被控制的晶体管，可以制造具有良好的电特性，高可靠性和低功耗的半导体器件。

公开(公告)号：US08829586B2

公开(公告)日：2014-09-09

申请号：US13014075

申请日：2011-01-26

申请人： Yuta Endo ,  Takayuki Saito ,  Shunpei Yamazaki

发明人： Yuta Endo ,  Takayuki Saito ,  Shunpei Yamazaki

IPC分类号： H01L29/76 ,  H01L21/36 ,  H01L27/12 ,  H01L21/02 ,  H01L29/49 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517

摘要： In a miniaturized transistor, a gate insulating layer is required to reduce its thickness; however, in the case where the gate insulating layer is a single layer of a silicon oxide film, a physical limit on thinning of the gate insulating layer might occur due to an increase in tunneling current, i.e. gate leakage current. With the use of a high-k film whose relative permittivity is higher than or equal to 10 is used for the gate insulating layer, gate leakage current of the miniaturized transistor is reduced. With the use of the high-k film as a first insulating layer whose relative permittivity is higher than that of a second insulating layer in contact with an oxide semiconductor layer, the thickness of the gate insulating layer can be thinner than a thickness of a gate insulating layer considered in terms of a silicon oxide film.

摘要翻译： 在小型化晶体管中，需要栅极绝缘层来减小其厚度; 然而，在栅绝缘层是单层氧化硅膜的情况下，由于隧穿电流（即栅极漏电流）的增加，可能会发生栅极绝缘层变薄的物理极限。 通过使用栅极绝缘层使用相对介电常数高于或等于10的高k膜，减小了小型化晶体管的栅极漏电流。 通过使用高k膜作为相对介电常数高于与氧化物半导体层接触的第二绝缘层的第一绝缘层的第一绝缘层，栅绝缘层的厚度可以比栅的厚度薄 根据氧化硅膜考虑的绝缘层。

公开(公告)号：US08461630B2

公开(公告)日：2013-06-11

申请号：US13299644

申请日：2011-11-18

申请人： Yuta Endo ,  Kosei Noda

发明人： Yuta Endo ,  Kosei Noda

IPC分类号： H01L29/66

CPC分类号： H01L27/1288 ,  H01L27/1225

摘要： A conductive film to be a gate electrode, a first insulating film to be a gate insulating film, a semiconductor film in which a channel region is formed, and a second insulating film to be a channel protective film are successively formed. With the use of a resist mask formed by performing light exposure with the use of a photomask which is a multi-tone mask and development, i) in a region without the resist mask, the second insulating film, the semiconductor film, the first insulating film, and the conductive film are successively etched, ii) the resist mask is made to recede by ashing or the like and only the region of the resist mask with small thickness is removed, so that part of the second insulating film is exposed, and iii) the exposed part of the second insulating film is etched, so that a pair of opening portions is formed.

摘要翻译： 依次形成作为栅电极的导电膜，作为栅绝缘膜的第一绝缘膜，形成沟道区的半导体膜和作为沟道保护膜的第二绝缘膜。 通过使用通过使用作为多色调掩模和显影的光掩模进行曝光而形成的抗蚀剂掩模，i）在没有抗蚀剂掩模的区域中，第二绝缘膜，半导体膜，第一绝缘体 膜和导电膜依次蚀刻，ii）通过灰化等使抗蚀剂掩模后退，并且仅去除厚度小的抗蚀剂掩模的区域，使第二绝缘膜的一部分露出，并且 iii）蚀刻第二绝缘膜的暴露部分，从而形成一对开口部。

公开(公告)号：US08143170B2

公开(公告)日：2012-03-27

申请号：US12704704

申请日：2010-02-12

申请人： Hidekazu Miyairi ,  Yuta Endo

发明人： Hidekazu Miyairi ,  Yuta Endo

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/027 ,  H01L21/00 ,  H01L21/84 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L27/1288 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/66772 ,  Y10S438/942

摘要： A single crystal semiconductor layer is provided over a base substrate with a second insulating film, a first conductive film, and a first insulating film interposed therebetween; an impurity element having one conductivity type is selectively added to the single crystal semiconductor layer, using a first resist mask; the first resist mask is removed; a second conductive film is formed over the single crystal semiconductor layer; a second resist mask having a depression is formed over the second conductive film; a first etching is performed on the first insulating film, the first conductive film, the second insulating film, the single crystal semiconductor layer, and the second conductive film, using the second resist mask; and a second etching with accompanying side-etching is performed on a part of the first conductive film to form a pattern of a gate electrode layer.

摘要翻译： 在基底基板上设置单晶半导体层，其具有第二绝缘膜，第一导电膜和介于其间的第一绝缘膜; 使用第一抗蚀剂掩模将具有一种导电类型的杂质元素选择性地添加到单晶半导体层; 第一个抗蚀剂掩模被去除; 在单晶半导体层上形成第二导电膜; 在第二导电膜上形成具有凹陷的第二抗蚀剂掩模; 使用第二抗蚀剂掩模对第一绝缘膜，第一导电膜，第二绝缘膜，单晶半导体层和第二导电膜进行第一蚀刻; 并且在第一导电膜的一部分上进行伴随的侧蚀刻的第二蚀刻，以形成栅极电极层的图案。

公开(公告)号：US08120491B2

公开(公告)日：2012-02-21

申请号：US12787921

申请日：2010-05-26

申请人： Yuta Endo ,  Noriaki Uto ,  Satohiro Okamoto

发明人： Yuta Endo ,  Noriaki Uto ,  Satohiro Okamoto

IPC分类号： G08B13/14

CPC分类号： G08G1/017 ,  G06K17/0022 ,  G06K19/07749 ,  G08G1/052 ,  H04B5/0056

摘要： An RFID tag having a memory portion for holding information on a wheeled vehicle is mounted on the wheeled vehicle, and an external interrogator and the RFID tag exchange information with each other. Further, an RFID tag having a memory portion for holding information on a wheeled vehicle and a communication device for exchanging information with the RFID tag are set on the wheeled vehicle. When the external interrogator and the RFID tag exchange information with each other, the communication device holds information of a situation, for example, speed information, information on date and time, and the like in the memory portion in the RFID tag.

摘要翻译： 具有用于在轮式车辆上保持信息的存储部分的RFID标签安装在轮式车辆上，并且外部询问器和RFID标签彼此交换信息。 此外，具有用于保持轮式车辆上的信息的存储部分和用于与RFID标签交换信息的通信装置的RFID标签设置在轮式车辆上。 当外部询问器和RFID标签彼此交换信息时，通信装置将RFID信息的存储部分中的信息，例如速度信息，日期和时间信息等信息保存。

公开(公告)号：US20120001335A1

公开(公告)日：2012-01-05

申请号：US13171834

申请日：2011-06-29

申请人： Tetsuhiro Tanaka ,  Yuta Endo

发明人： Tetsuhiro Tanaka ,  Yuta Endo

IPC分类号： H01L23/48 ,  H01L21/28

CPC分类号： H01L29/458 ,  H01L21/76804 ,  H01L21/76834 ,  H01L21/76882 ,  H01L21/76883

摘要： Provided is a method for manufacturing a semiconductor device having favorable electric characteristics with a high yield. A groove and/or a contact hole reaching a semiconductor region or a conductive region is formed in an insulating film covering the semiconductor region or the conductive region; a first conductive film is formed in the groove and/or the contact hole; the first conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas and to an atmosphere containing water to be fluidized partially or entirely; and a second conductive film is formed over the first conductive film.

摘要翻译： 提供一种以高产率制造具有良好的电特性的半导体器件的方法。 在覆盖半导体区域或导电区域的绝缘膜中形成到达半导体区域或导电区域的沟槽和/或接触孔; 在沟槽和/或接触孔中形成第一导电膜; 第一导电膜暴露于由氧化性气体和卤素系气体的混合气体产生的等离子体，并且含有水的气氛部分或全部被流化; 并且在第一导电膜上形成第二导电膜。

公开(公告)号：US07737852B2

公开(公告)日：2010-06-15

申请号：US11902387

申请日：2007-09-21

申请人： Yuta Endo ,  Noriaki Uto ,  Satohiro Okamoto

发明人： Yuta Endo ,  Noriaki Uto ,  Satohiro Okamoto

IPC分类号： G08B13/14

CPC分类号： G08G1/017 ,  G06K17/0022 ,  G06K19/07749 ,  G08G1/052 ,  H04B5/0056

摘要： An RFID tag having a memory portion for holding information on a wheeled vehicle is mounted on the wheeled vehicle, and an external interrogator and the RFID tag exchange information with each other. Further, an RFID tag having a memory portion for holding information on a wheeled vehicle and a communication device for exchanging information with the RFID tag are set on the wheeled vehicle. When the external interrogator and the RFID tag exchange information with each other, the communication device holds information of a situation, for example, speed information, information on date and time, and the like in the memory portion in the RFID tag.

摘要翻译： 具有用于在轮式车辆上保持信息的存储部分的RFID标签安装在轮式车辆上，并且外部询问器和RFID标签彼此交换信息。 此外，具有用于保持轮式车辆上的信息的存储部分和用于与RFID标签交换信息的通信装置的RFID标签设置在轮式车辆上。 当外部询问器和RFID标签彼此交换信息时，通信装置将RFID信息的存储部分中的信息，例如速度信息，日期和时间信息等信息保存。