公开(公告)号：US20050170565A1

公开(公告)日：2005-08-04

申请号：US11043451

申请日：2005-01-27

申请人： Gen Fujii ,  Hiroko Shiroguchi

发明人： Gen Fujii ,  Hiroko Shiroguchi

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L21/00

CPC分类号： H01L29/42384 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765

摘要： When forming a contact hole by a conventional manufacturing step of a semiconductor device, a resist is required to be formed on almost entire surface of a substrate so as to be applied on a film other than an area in which a contact hole is to be formed, leading to drastically reduced throughput. According to a forming method of a contact hole and a manufacturing method of a semiconductor device, an EL display device and a liquid crystal display device of the invention, an island shape organic film is selectively formed over a semiconductor layer, a conductive layer or an insulating layer, and an insulating film is formed around the island shape organic film to form a contact hole. Therefore, a conventional patterning using a resist is not required, and high throughput and low cost can be achieved.

摘要翻译： 当通过半导体器件的常规制造步骤形成接触孔时，需要在基板的几乎整个表面上形成抗蚀剂，以便施加在除了要形成接触孔的区域之外的膜上 ，导致吞吐量大幅降低。 根据本发明的接触孔的形成方法和半导体装置的制造方法，EL显示装置和液晶显示装置，在半导体层，导电层或导电层上选择性地形成岛状有机膜 绝缘层，并且在岛状有机膜周围形成绝缘膜以形成接触孔。 因此，不需要使用抗蚀剂的常规图案，可以实现高生产率和低成本。

公开(公告)号：US20050158665A1

公开(公告)日：2005-07-21

申请号：US11025921

申请日：2005-01-03

申请人： Shinji Maekawa ,  Gen Fujii ,  Hiroko Shiroguchi ,  Masafumi Morisue

发明人： Shinji Maekawa ,  Gen Fujii ,  Hiroko Shiroguchi ,  Masafumi Morisue

IPC分类号： H01L21/469 ,  B05D1/12 ,  G02B5/20 ,  G03F7/00 ,  H01L21/02

CPC分类号： G02B5/201 ,  G03F7/0007 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3281 ,  H01L27/3295 ,  H01L29/66757 ,  H01L29/66765 ,  H01L51/56

摘要： The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput and yield. According to the invention, after forming a first protective film which has low wettability on a substrate, a material which has high wettability is applied or discharged on an outer edge of a first mask pattern, thereby a film pattern and a substrate having the film pattern are formed.

摘要翻译： 本发明通过简单的步骤提供了具有包括绝缘膜，半导体膜，导电膜等的膜图案的基板的制造方法，以及低成本，高生产率的半导体器件的制造方法， 产量。 根据本发明，在形成在基材上具有低润湿性的第一保护膜之后，在第一掩模图案的外边缘上施加或排出具有高润湿性的材料，从而形成膜图案和具有膜图案的基板 形成。

公开(公告)号：US08330157B2

公开(公告)日：2012-12-11

申请号：US12911041

申请日：2010-10-25

申请人： Gen Fujii ,  Erika Takahashi

发明人： Gen Fujii ,  Erika Takahashi

IPC分类号： H01L29/10

CPC分类号： H01L51/0022 ,  H01L51/0533 ,  H01L51/0545

摘要： A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在透光衬底上形成栅电极，在栅电极和衬底上形成含有无机材料的栅极绝缘层，在栅极上形成含有可光聚合反应性基团的有机层 通过使用栅电极作为掩模从基板的背面用光照射有机层来选择性地聚合有机层，通过除去除了聚合的有机层的残留物形成有机聚合物层，形成 在除了形成有机聚合物层的区域以外的区域的栅极绝缘层上包含水解基团的有机硅烷膜，通过在有机聚合物层上涂布含有导电性材料的组合物形成源极和漏极，形成 栅电极上的半导体层，源极和漏极。

公开(公告)号：US08293457B2

公开(公告)日：2012-10-23

申请号：US12537005

申请日：2009-08-06

申请人： Shinji Maekawa ,  Gen Fujii ,  Hiroko Shiroguchi ,  Masafumi Morisue

发明人： Shinji Maekawa ,  Gen Fujii ,  Hiroko Shiroguchi ,  Masafumi Morisue

IPC分类号： G03F7/26

CPC分类号： G02B5/201 ,  G03F7/0007 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3281 ,  H01L27/3295 ,  H01L29/66757 ,  H01L29/66765 ,  H01L51/56

摘要： The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput and yield. According to the invention, after forming a first protective film which has low wettability on a substrate, a material which has high wettability is applied or discharged on an outer edge of a first mask pattern, thereby a film pattern and a substrate having the film pattern are formed.

摘要翻译： 本发明通过简单的步骤提供了具有包括绝缘膜，半导体膜，导电膜等的膜图案的基板的制造方法，以及低成本，高生产率的半导体器件的制造方法， 产量。 根据本发明，在形成在基材上具有低润湿性的第一保护膜之后，在第一掩模图案的外边缘上施加或排出具有高润湿性的材料，从而形成膜图案和具有膜图案的基板 形成。

公开(公告)号：US08242486B2

公开(公告)日：2012-08-14

申请号：US11795510

申请日：2006-02-07

申请人： Gen Fujii

发明人： Gen Fujii

IPC分类号： H01L35/24 ,  H01L51/00

CPC分类号： H01L27/283 ,  H01L23/5254 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object is to provide technology for manufacturing a higher-reliability memory device and a semiconductor device that is equipped with the memory device at low cost. A semiconductor device of the present invention has a first conductive layer, a first insulating layer that is provided to be in contact with a side end portion of the first conductive layer, a second insulating layer that is provided over the first conductive layer and the first insulating layer, and a second conductive layer that is provided over the second insulating layer. The second insulating layer is formed of an insulating material, and wettability against a fluidized substance when the insulating material is fluidized, is higher for the first insulating layer than the first conductive layer.

摘要翻译： 本发明的目的是提供一种制造高可靠性的存储器件和半导体器件的技术，该器件以低成本装备存储器件。 本发明的半导体器件具有第一导电层，设置成与第一导电层的侧端部接触的第一绝缘层，设置在第一导电层上的第二绝缘层和第一导电层 绝缘层和设置在第二绝缘层上的第二导电层。 第二绝缘层由绝缘材料形成，并且当绝缘材料流化时对流化物质的润湿性对于第一绝缘层比第一导电层高。

公开(公告)号：US08044574B2

公开(公告)日：2011-10-25

申请号：US12406223

申请日：2009-03-18

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda ,  Kengo Akimoto ,  Gen Fujii ,  Tetsuji Yamaguchi

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda ,  Kengo Akimoto ,  Gen Fujii ,  Tetsuji Yamaguchi

IPC分类号： H01L51/10

CPC分类号： H01L51/529 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3276 ,  H01L29/66757 ,  H01L51/5206 ,  H01L51/5246 ,  H01L2251/5315 ,  H01L2251/5323

摘要： It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each having a first electrode, a layer containing an organic compound, and a second electrode. The display device further includes a heat-resistant planarizing film over a substrate having an insulating surface, a first electrode over the heat-resistant planarizing film, a wiring covering an end portion of the first electrode, a partition wall covering the end portion of first electrode and the wiring, a layer containing an organic compound, and a second electrode over the layer containing an organic compound.

摘要翻译： 本发明的目的是提供一种可靠的显示装置和用于制造显示装置的方法，其减少制造步骤的数量，并且以更高的产量。 根据本发明的显示装置包括多个显示元件，每个显示元件具有第一电极，含有有机化合物的层和第二电极。 显示装置还包括在具有绝缘表面的基板上的耐热平面化膜，耐热平面化膜上的第一电极，覆盖第一电极的端部的布线，覆盖第一电极的端部的分隔壁 电极和布线，含有有机化合物的层，以及包含有机化合物的层上的第二电极。

公开(公告)号：US07964452B2

公开(公告)日：2011-06-21

申请号：US12857809

申请日：2010-08-17

申请人： Shunpei Yamazaki ,  Shinji Maekawa ,  Gen Fujii ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Shinji Maekawa ,  Gen Fujii ,  Hideaki Kuwabara

IPC分类号： H01L21/84

CPC分类号： G02F1/13458 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/13415 ,  G02F2001/136295 ,  H01L27/1292

摘要： As a substrate gets larger, time of manufacture is increased due to the repetition of film formations and etchings; waste disposal costs of etchant and the like are increased; and material efficiency is significantly reduced. A base film for improving adhesion between a substrate and a material layer formed by a droplet discharge method is formed in the invention. Further, a manufacturing method of a liquid crystal display device according to the invention includes at least one step for forming the following patterns required for manufacturing a liquid crystal display device without using a photomask: a pattern of a material layer typified by a wiring (or an electrode) pattern, an insulating layer pattern; or a mask pattern for forming another pattern.

摘要翻译： 由于重复膜形成和蚀刻，衬底越来越大，制造时间增加; 蚀刻剂等的废物处理成本增加; 材料效率显着降低。 在本发明中形成了用于改善基板和通过液滴喷射方法形成的材料层之间的粘附性的基膜。 此外，根据本发明的液晶显示装置的制造方法包括至少一个步骤，用于形成在不使用光掩模的情况下制造液晶显示装置所需的以下图案：以布线为代表的材料层的图案（或 电极）图案，绝缘层图案; 或用于形成另一图案的掩模图案。

公开(公告)号：US20110097830A1

公开(公告)日：2011-04-28

申请号：US12983336

申请日：2011-01-03

申请人： Yohei Kanno ,  Gen Fujii

发明人： Yohei Kanno ,  Gen Fujii

IPC分类号： H01L33/00 ,  H01L21/336

CPC分类号： H01L29/66765 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/42384 ,  H01L29/78603 ,  H01L29/78696

摘要： In case that a conventional TFT is formed to have an inversely staggered type, a resist mask is required to be formed by an exposing, developing, and droplet discharging in forming an island-like semiconductor region. It resulted in the increase in the number of processes and the number of materials. According to the present invention, a process can be simplified since after forming a source region and a drain region, a portion serving as a channel region is covered by an insulating film serving as a channel protecting film to form an island-like semiconductor film, and so a semiconductor element can be manufactured by using only metal mask without using a resist mask.

摘要翻译： 在常规TFT形成为具有反交错型的情况下，需要通过在形成岛状半导体区域中的曝光，显影和液滴放电来形成抗蚀剂掩模。 这导致过程数量和材料数量的增加。 根据本发明，由于在形成源极区域和漏极区域之后，由于作为沟道区域的部分被用作沟道保护膜的绝缘膜覆盖以形成岛状半导体膜，因此可以简化工艺， 因此可以仅使用金属掩模而不使用抗蚀剂掩模来制造半导体元件。

公开(公告)号：US07825407B2

公开(公告)日：2010-11-02

申请号：US12639274

申请日：2009-12-16

申请人： Gen Fujii ,  Erika Takahashi

发明人： Gen Fujii ,  Erika Takahashi

IPC分类号： H01L51/40

CPC分类号： H01L51/0022 ,  H01L51/0533 ,  H01L51/0545

摘要： A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在透光衬底上形成栅电极，在栅电极和衬底上形成含有无机材料的栅极绝缘层，在栅极上形成含有可光聚合反应性基团的有机层 通过使用栅电极作为掩模从基板的背面用光照射有机层来选择性地聚合有机层，通过除去除了聚合的有机层的残留物形成有机聚合物层，形成 在除了形成有机聚合物层的区域以外的区域的栅极绝缘层上包含水解基团的有机硅烷膜，通过在有机聚合物层上涂布含有导电性材料的组合物形成源极和漏极，形成 栅电极上的半导体层，源极和漏极。

公开(公告)号：US07820465B2

公开(公告)日：2010-10-26

申请号：US11712481

申请日：2007-03-01

申请人： Gen Fujii

发明人： Gen Fujii

IPC分类号： H01L21/00

CPC分类号： C23C26/00 ,  C03C17/42 ,  C23C4/01 ,  C23C28/00 ,  H01C17/06 ,  H01L51/0004 ,  H05K3/0082 ,  H05K3/1208 ,  H05K3/1241 ,  H05K2201/0108 ,  H05K2203/0551 ,  H05K2203/1173

摘要： A circuit pattern is formed by following steps: forming a light-blocking mask over a major surface of a light-transmitting substrate, forming a first film in a first region over the substrate and the mask, forming a photocatalytic film in at least a part of the first region over the first film, changing wettability of the first film in a second region which is in the first region, being in contact with the photocatalytic film, and not overlapping the mask, by light irradiation from a back surface opposite to the major surface of the substrate, removing the photocatalytic film, and forming a composition including a pattern forming material in the second region.

摘要翻译： 通过以下步骤形成电路图案：在透光基板的主表面上形成遮光掩模，在基板和掩模之上的第一区域中形成第一膜，在至少一部分中形成光催化膜 在第一膜上的第一区域的第一膜的第一区域的润湿性，在与第一区域相接触的第二区域中与光催化膜接触，并且不与掩模重叠， 基板的主表面，去除光催化膜，并在第二区域中形成包含图案形成材料的组合物。