公开(公告)号：US20150316793A1

公开(公告)日：2015-11-05

申请号：US14105527

申请日：2013-12-13

Applicant: Luxtera Inc.

Inventor： Ali Ayazi ,  Gianlorenzo Masini ,  Subal Sahni ,  Attila Mekis ,  Thierry Pinguet

IPC: G02F1/025 ,  G02F1/225

CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/06 ,  G02F2202/105

Abstract: Methods and systems for a low-parasitic silicon high-speed phase modulator are disclosed and may include fabricating an optical phase modulator that comprises a PN junction waveguide formed in a silicon layer, wherein the silicon layer may be on an oxide layer and the oxide layer may be on a silicon substrate. The PN junction waveguide may have p-doped and n-doped regions on opposite sides along a length of the PN junction waveguide, and portions of the p-doped and n-doped regions may be removed. Contacts may be formed on remaining portions of the p-doped and n-doped regions. Portions of the p-doped and n-doped regions may be removed symmetrically about the PN junction waveguide. Portions of the p-doped and n-doped regions may be removed in a staggered fashion along the length of the PN junction waveguide. Etch transition features may be removed along the p-doped and n-doped regions.

Abstract translation: 公开了一种用于低寄生硅高速相位调制器的方法和系统，并且可以包括制造包括形成在硅层中的PN结波导的光相位调制器，其中硅层可以在氧化物层上，氧化物层 可以在硅衬底上。 PN结波导可以在PN结波导的长度的相对侧上具有p掺杂区域和n掺杂区域，并且p掺杂区域和n掺杂区域的部分可以被去除。 可以在p掺杂区域和n掺杂区域的剩余部分上形成接触。 可以围绕PN结波导对称地去除部分p掺杂区域和n掺杂区域。 可以沿着PN结波导的长度以交错的方式去除部分p掺杂区域和n掺杂区域。 蚀刻跃迁特征可以沿着p掺杂区域和n掺杂区域去除。

公开(公告)号：US11049851B2

公开(公告)日：2021-06-29

申请号：US16001135

申请日：2018-06-06

Applicant: Luxtera, Inc.

Inventor： Kam-Yan Hon ,  Subal Sahni ,  Gianlorenzo Masini ,  Attila Mekis

IPC: H01L25/16 ,  F21V8/00 ,  G02B6/12

Abstract: Methods and systems for selectively illuminated integrated photodetectors with configured launching and adaptive junction profile for bandwidth improvement may include a photonic chip comprising an input waveguide and a photodiode. The photodiode comprises an absorbing region with a p-doped region on a first side of the absorbing region and an n-doped region on a second side of the absorbing region. An optical signal is received in the absorbing region via the input waveguide, which is offset to one side of a center axis of the absorbing region; an electrical signal is generated based on the received optical signal. The first side of the absorbing region may be p-doped. P-doped and n-doped regions may alternate on the first and second sides of the absorbing region along the length of the photodiode. The absorbing region may comprise germanium, silicon, silicon/germanium, or similar material that absorbs light of a desired wavelength.

公开(公告)号：US20200162166A1

公开(公告)日：2020-05-21

申请号：US16518916

申请日：2019-07-22

Applicant: Luxtera, Inc.

Inventor： Subal Sahni ,  Kam-Yan Hon ,  Attila Mekis ,  Gianlorenzo Masini ,  Lieven Verslegers

IPC: H04B10/548 ,  G02F1/025

Abstract: Methods and systems for a silicon-based optical phase modulator with high modal overlap may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.

公开(公告)号：US10581526B2

公开(公告)日：2020-03-03

申请号：US16424142

申请日：2019-05-28

Applicant: Luxtera, Inc.

Inventor： Peter DeDobbelaere ,  Christopher Bergey ,  Attila Mekis

IPC: H04J14/02 ,  H04B10/25 ,  H04B10/40 ,  G02B6/124 ,  G02B6/12 ,  G02B6/34 ,  G02B6/30 ,  H04B10/50

Abstract: Methods and systems for a bi-directional receiver for standard single-mode fiber based on grating couplers may include, in an integrated circuit, a multi-wavelength grating coupler, and first and second optical sources coupled to the integrated circuit: coupling first and second source optical signals at first and second wavelengths into the photonically-enabled integrated circuit using the first and second optical sources, where the second wavelength is different from the first wavelength, receiving a first optical data signal at the first wavelength from an optical fiber coupled to the multi-wavelength grating coupler, and receiving a second optical data signal at the second wavelength from the optical fiber. Third and fourth optical data signals at the first and second wavelengths may be communicated out of the optoelectronic transceiver via the multi-wavelength grating coupler.

公开(公告)号：US10523337B2

公开(公告)日：2019-12-31

申请号：US16353591

申请日：2019-03-14

Applicant: Luxtera, Inc.

Inventor： Peter De Dobbelaere ,  Attila Mekis ,  Gianlorenzo Masini

IPC: G02B6/43 ,  H04B10/80 ,  G02B6/42 ,  G02B6/122 ,  G02B6/34

Abstract: Methods and systems for large silicon photonic interposers by stitching are disclosed and may include, in an optical communication system including a silicon photonic interposer, where the interposer includes a plurality of reticle sections: communicating an optical signal between two of the plurality of reticle sections utilizing a waveguide. The waveguide may include a taper region at a boundary between the two reticle sections, the taper region expanding an optical mode of the communicated optical signal prior to the boundary and narrowing the optical mode after the boundary. A continuous wave (CW) optical signal may be received in a first of the reticle sections from an optical source external to the interposer. The CW optical signal may be received in the interposer from an optical source assembly coupled to a grating coupler in the first of the reticle sections in the silicon photonic interposer.

公开(公告)号：US10436990B2

公开(公告)日：2019-10-08

申请号：US15957000

申请日：2018-04-19

Applicant: Luxtera, Inc.

Inventor： Roman Bruck ,  Attila Mekis

IPC: G02B6/30 ,  G02B6/42 ,  G02B6/43 ,  H04B10/25 ,  H04B10/70 ,  H04B10/66 ,  G02B6/12 ,  G02B6/122 ,  G02B6/124 ,  G02B6/125 ,  G02B6/136

Abstract: Methods and systems for two-dimensional mode-matching grating couplers may include in a photonic chip comprising a grating coupler at a surface of the photonic chip, the grating coupler having increased scattering strength in a direction of a light wave traveling through the grating coupler: receiving an optical signal from a first direction within the photonic chip; and scattering the optical signal out of the surface of the photonic chip. A second optical signal may be received in the grating coupler from a second direction within the photonic chip. The second optical signal may be scattered out of the surface of the photonic chip. The increasing scattering strength may be configured by increased width scatterers along a direction perpendicular to the direction of light travel. The increased scattering strength may be configured by a transition of shapes of scatterers in the grating coupler.

公开(公告)号：US20190238228A1

公开(公告)日：2019-08-01

申请号：US16378119

申请日：2019-04-08

Applicant: Luxtera, Inc.

Inventor： Attila Mekis ,  Peter DeDobbelaere ,  Kosei Yokoyama ,  Sherif Abdalla ,  Steffen Gloeckner ,  John Guckenberger ,  Thierry Pinguet ,  Gianlorenzo Masini ,  Daniel Kucharski

IPC: H04B10/2575 ,  H01L27/12 ,  H04B10/40 ,  H01L21/84

CPC classification number: H04B10/2575 ,  H01L21/84 ,  H01L25/0652 ,  H01L25/167 ,  H01L27/0688 ,  H01L27/1203 ,  H01L2225/06541 ,  H04B10/40

Abstract: Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include fabricating photonic and electronic devices on two CMOS wafers with different silicon layer thicknesses. The devices may be fabricated on semiconductor-on-insulator (SOI) wafers utilizing a bulk CMOS process and/or on a SOI wafer utilizing a SOI CMOS process. The different thicknesses may be fabricated utilizing a double SOI process and/or a selective area growth process. Cladding layers may be fabricated utilizing one or more oxygen implants and/or utilizing CMOS trench oxide on the CMOS wafer. Silicon may be deposited on the CMOS trench oxide utilizing epitaxial lateral overgrowth. Cladding layers may be fabricated utilizing selective backside etching. Reflective surfaces may be fabricated by depositing metal on the selectively etched regions. Silicon dioxide or silicon germanium integrated in the CMOS wafer may be utilized as an etch stop layer.

公开(公告)号：US10345540B2

公开(公告)日：2019-07-09

申请号：US15975964

申请日：2018-05-10

Applicant: Luxtera, Inc.

Inventor： Attila Mekis ,  Peng Sun ,  Steffen Gloeckner ,  Michael Mack ,  Steven Hovey

IPC: H04B10/00 ,  G02B6/42 ,  G02B6/12

Abstract: Methods and systems for coupling a light source assembly to an optical integrated circuit are disclosed and may include a system comprising a laser source assembly having a laser, a rotator, and a mirror, where the laser source assembly is coupled to a die including an angled grating coupler and a waveguide. The system may generate an optical signal utilizing the laser, rotate the polarization of the optical signal utilizing the rotator, reflect the rotated optical signal onto the grating coupler on the die, and couple the optical signal to the waveguide, where an angle between a grating coupler axis that is parallel to the waveguide and a plane of incidence of the optical signal reflected to the angled grating coupler is non-zero. The angle between the grating coupler axis and the plane of incidence of the optical signal reflected to the angled grating coupler may be 45 degrees.

公开(公告)号：US10168481B2

公开(公告)日：2019-01-01

申请号：US15950897

申请日：2018-04-11

Applicant: Luxtera, Inc.

Inventor： Lieven Verslegers ,  Attila Mekis

IPC: G02B6/34 ,  G02B6/26 ,  G02B6/124 ,  G02B6/30 ,  G02B5/18 ,  G02B6/12

Abstract: Methods and systems for grating couplers incorporating perturbed waveguides are disclosed and may include in a semiconductor photonics die, communicating optical signals into and/or out of the die utilizing a grating coupler on the die, where the grating coupler comprises perturbed waveguides. The perturbed waveguides may include rows of continuous waveguides with scatterers extending throughout a length of said perturbed waveguides a variable width along their length. The grating coupler may comprise a single polarization grating coupler comprising perturbed waveguides and a non-perturbed grating. The grating coupler may comprise a polarization splitting grating coupler (PSGC) that includes two sets of perturbed waveguides at a non-zero angle, or a plurality of non-linear rows of discrete shapes. The PSGC may comprise discrete scatterers at an intersection of the sets of perturbed waveguides. The grating coupler may comprise individual scatterers between the perturbed waveguides.

公开(公告)号：US20180358342A1

公开(公告)日：2018-12-13

申请号：US16001135

申请日：2018-06-06

Applicant: Luxtera, Inc.

Inventor： Kam-Yan Hon ,  Subal Sahni ,  Gianlorenzo Masini ,  Attila Mekis

IPC: H01L25/16 ,  F21V8/00 ,  G02B6/12

CPC classification number: H01L25/167 ,  G02B6/0006 ,  G02B6/12004 ,  G02B6/12007 ,  G02B2006/12111 ,  G02B2006/12126

Abstract: Methods and systems for selectively illuminated integrated photodetectors with configured launching and adaptive junction profile for bandwidth improvement may include a photonic chip comprising an input waveguide and a photodiode. The photodiode comprises an absorbing region with a p-doped region on a first side of the absorbing region and an n-doped region on a second side of the absorbing region. An optical signal is received in the absorbing region via the input waveguide, which is offset to one side of a center axis of the absorbing region; an electrical signal is generated based on the received optical signal. The first side of the absorbing region may be p-doped. P-doped and n-doped regions may alternate on the first and second sides of the absorbing region along the length of the photodiode. The absorbing region may comprise germanium, silicon, silicon/germanium, or similar material that absorbs light of a desired wavelength.