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公开(公告)号:US10741258B2
公开(公告)日:2020-08-11
申请号:US16515134
申请日:2019-07-18
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Tommaso Vali , Kenneth J. Eldredge , Frankie F. Roohparvar , Luca De Santis
Abstract: Memory having an array of memory cells and a controller for access of the array of memory cells that is configured to generate a data value indicative of a level of a property sensed from a data line while applying potentials to control gates of memory cells of more than one string of series-connected memory cells connected to that data line.
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公开(公告)号:US20190272877A1
公开(公告)日:2019-09-05
申请号:US16413708
申请日:2019-05-16
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Luca De Santis , Tommaso Vali , Kenneth J. Eldredge , Frankie F. Roohparvar
Abstract: Memories include a data line, a plurality of strings of series-connected memory cells selectively connected to the data line, a plurality of first access lines each coupled to a control gate of a respective memory cell of each string of series-connected memory cells of the plurality of strings of series-connected memory cells, and a plurality of second access lines each coupled to a control gate of a respective memory cell of a respective string of series-connected memory cells of the plurality of strings of series-connected memory cells.
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公开(公告)号:US10403371B2
公开(公告)日:2019-09-03
申请号:US16009541
申请日:2018-06-15
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Tommaso Vali , Kenneth J. Eldredge , Frankie F. Roohparvar , Luca De Santis
Abstract: Methods of operating memory include generating a data value indicative of a level of a property sensed from a data line while applying potentials to control gates of memory cells of more than one string of series-connected memory cells connected to that data line. Methods of operating memory further include generating data values indicative of levels of a property sensed from data lines while applying potentials to control gates of memory cells of strings of series-connected memory cells connected to those data lines, performing a logical operation on a set of data values comprising those data values, and determining a potential to be applied to control gates of different memory cells of those strings of series-connected memory cells in response to an output of the logical operation on the set of data values.
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公开(公告)号:US10332605B2
公开(公告)日:2019-06-25
申请号:US15645009
申请日:2017-07-10
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Kenneth J. Eldredge , Frankie F. Roohparvar , Luca De Santis , Tommaso Vali
Abstract: Methods of operating a memory device include comparing input data to data stored in memory cells coupled to a data line, comparing a representation of a level of current in the data line to a reference, and determining that the input data potentially matches the data stored in the memory cells when the representation of the level of current in the data line is less than the reference. Methods of operating a memory device further include comparing input data to first data and to second data stored in memory cells coupled to a first data line or to a second data line, respectively, comparing representations of the levels of current in the first data line and in the second data line to a first reference and to a different second reference, and deeming one to be a closer match to the input data in response to results of the comparisons.
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公开(公告)号:US20180322922A1
公开(公告)日:2018-11-08
申请号:US16019650
申请日:2018-06-27
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Luca De Santis , Tommaso Vali , Kenneth J. Eldredge , Vishal Sarin
CPC classification number: G11C15/046 , G11C16/0483 , G11C16/10 , G11C29/52
Abstract: Methods include receiving a pattern to be searched in a memory having a plurality of sets of memory elements with each set coupled to a separate data line and corresponding to a same set of bit positions of the pattern. Methods further include receiving a pattern of data to be programmed into a memory, programming a first data state into one memory cell of each cell pair of a plurality of cell pairs of a memory array, and programing a second data state into another memory cell of each cell pair of the plurality of cell pairs for each bit position of the pattern. Memory configured to facilitate such methods include a plurality of cell pairs, each cell pair of the plurality of cell pairs programmed to store a same bit of data corresponding to a particular bit position of a pattern to be searched in the memory.
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36.
公开(公告)号:US09965208B1
公开(公告)日:2018-05-08
申请号:US13774688
申请日:2013-02-22
Applicant: Micron Technology, Inc.
Inventor: Frankie F. Roohparvar , Luca De Santis , Tommaso Vali , Kenneth J. Eldredge
CPC classification number: G06F3/0634 , G06F3/0626 , G06F3/0679 , G06F3/0688 , G06F11/1064 , G06F11/2263
Abstract: Configurable operating mode memory devices are disclosed. In at least one embodiment, a memory device is configurable into one or more operating modes. An array of memory cells can be allocated into one or more partitions where each partition is associated only with a particular mode of operation. In at least one other embodiment, a memory device is configured to store user data in a portion of a memory array and to store data corresponding to a logical function associated with a different operating mode of the memory device in a different portion of the memory array.
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公开(公告)号:US09405859B1
公开(公告)日:2016-08-02
申请号:US13864605
申请日:2013-04-17
Applicant: Micron Technology, Inc.
Inventor: Kenneth J. Eldredge , Frankie F. Roohparvar , Luca De Santis , Tommaso Vali
CPC classification number: G06F17/30982 , G06F12/0246 , G11C7/1006 , G11C15/00 , G11C16/0483
Abstract: Methods for storing a feature vector, as well as related comparison units and systems. One such method involves programming a string of memory cells of memory to store do not care data as at least a portion of a value of an attribute of the feature vector.
Abstract translation: 存储特征向量的方法,以及相关的比较单元和系统。 一种这样的方法涉及编程存储器的一串存储器单元以存储不关心数据作为特征向量的属性的值的至少一部分。
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公开(公告)号:US09343155B1
公开(公告)日:2016-05-17
申请号:US13774636
申请日:2013-02-22
Applicant: Micron Technology, Inc.
Inventor: Luca De Santis , Tommaso Vali , Kenneth J. Eldredge , Frankie F. Roohparvar
CPC classification number: G11C16/10 , G11C16/0483 , G11C16/26 , G11C16/3418
Abstract: Methods for programming, methods for operating, and memories are disclosed. One such method for programming includes programming a group of memory cells such that a series string of memory cells of the group of memory cells is programmed to provide a logical function responsive to an input minterm whose variables are coupled to respective, associated memory cells.
Abstract translation: 公开了编程方法,操作方法和存储器。 用于编程的一种这样的方法包括对一组存储器单元进行编程,使得存储器单元组的一系列存储器单元被编程为响应于其变量耦合到相应的存储单元的输入minter来提供逻辑功能。
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39.
公开(公告)号:US11875859B2
公开(公告)日:2024-01-16
申请号:US17189529
申请日:2021-03-02
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Kenneth J. Eldredge , Frankie F. Roohparvar , Luca De Santis , Tommaso Vali
CPC classification number: G11C16/28 , G11C15/00 , G11C15/046 , G11C16/0483
Abstract: A memory device might include control circuitry configured to cause the memory device to compare input data to data stored in memory cells connected to a data line, cause a first level of current to flow from the data line in response to a mismatch between one digit of the input data and data stored in a respective pair of memory cells, cause a second level of current to flow from the data line in response to a mismatch between a different digit of the input data and the data stored in a respective pair of memory cells, compare a representation of a level of current in the data line to a reference, and deem the input data to potentially match or not match the data stored in the plurality of memory cells in response to the comparison.
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公开(公告)号:US10950312B2
公开(公告)日:2021-03-16
申请号:US16458384
申请日:2019-07-01
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Kenneth J. Eldredge , Frankie F. Roohparvar , Luca De Santis , Tommaso Vali
Abstract: Methods of operating a memory device include comparing input data to data stored in memory cells coupled to a data line, comparing a representation of a level of current in the data line to a reference, and determining that the input data potentially matches the data stored in the memory cells when the representation of the level of current in the data line is less than the reference. Methods of operating a memory device further include comparing input data to first data and to second data stored in memory cells coupled to a first data line or to a second data line, respectively, comparing representations of the levels of current in the first data line and in the second data line to a first reference and to a different second reference, and deeming one to be a closer match to the input data in response to results of the comparisons.
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