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公开(公告)号：US20150249202A1
公开(公告)日：2015-09-03
申请号：US14193979
申请日：2014-02-28
Applicant: Micron Technology, Inc.
Inventor： Manzar Siddik , Witold Kula
CPC classification number: H01L43/12 , G11C11/161 , H01L43/08
Abstract: A magnetic cell includes a magnetic region formed from a precursor magnetic material comprising a diffusible species and at least one other species. An oxide region is disposed between the magnetic region and another magnetic region, and an amorphous region is proximate to the magnetic region. The amorphous region comprises an attracter material that has a chemical affinity for the diffusible species that is higher than a chemical affinity of the at least one other species for the diffusible species. Thus, the diffusible species is transferred from the precursor magnetic material to the attracter material, forming a depleted magnetic material. The removal of the diffusible species and the amorphous nature of the region of the attracter material promotes crystallization of the depleted magnetic material, which enables high tunnel magnetoresistance and high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.
Abstract translation: 磁性电池包括由包含可扩散物质和至少一种其它物质的前体磁性材料形成的磁性区域。 氧化物区域设置在磁性区域和另一个磁性区域之间，非晶区域靠近磁性区域。 无定形区域包括对扩散物质具有高于至少一种其它物质对于可扩散物质的化学亲和力的化学亲和力的吸收材料。 因此，可扩散物质从前体磁性材料转移到致敏材料，形成耗尽的磁性材料。 去除可扩散物质和无定形性质的材料促进了耗尽的磁性材料的结晶，这使得能够实现高隧道磁阻和高磁各向异性强度。 还公开了制造方法和半导体器件。
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公开(公告)号：US20150076633A1
公开(公告)日：2015-03-19
申请号：US14030763
申请日：2013-09-18
Applicant: Micron Technology, Inc.
Inventor： Manzar Siddik , Andy Lyle , Witold Kula
CPC classification number: H01L43/12 , G11C11/161 , H01L43/08 , H01L43/10
Abstract: A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magneto resistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.
Abstract translation: 磁性电池包括靠近磁性区域（例如，自由区域）的吸收材料。 与可扩散物质和至少另一种磁性材料之间的化学亲和力相比，配方材料被配制为对于可形成磁性材料的可扩散物质形成更高的化学亲和力，从而形成磁性区域。 因此，将可扩散物质从磁性材料中除去至该物质。 去除容纳耗尽的磁性材料的结晶。 结晶化的耗尽磁性材料能够实现高隧道磁阻，高能量势垒和高能量势垒比。 磁性区域可以形成为连续的磁性材料，从而能够实现高的交换刚度，并且将磁性区域定位在两个磁各向异性诱发氧化物区域之间，可以实现高磁各向异性强度。 还公开了制造方法和半导体器件。
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公开(公告)号：US12048167B2
公开(公告)日：2024-07-23
申请号：US17806674
申请日：2022-06-13
Applicant: Micron Technology, Inc.
Inventor： Witold Kula , Wayne I. Kinney , Gurtej S. Sandhu
CPC classification number: H10B61/00 , G11C11/161 , H10N50/01 , H10N50/10 , H10N50/80 , H10N50/85 , H10B61/22
Abstract: A magnetic cell core includes a seed region with a plurality of magnetic regions and a plurality of nonmagnetic regions thereover. The seed region provides a template that enables formation of an overlying nonmagnetic region with a microstructure that enables formation of an overlying free region with a desired crystal structure. The free region is disposed between two nonmagnetic regions, which may both be configured to induce surface/interface magnetic anisotropy. The structure is therefore configured to have a high magnetic anisotropy strength, a high energy barrier ratio, high tunnel magnetoresistance, a low programming current, low cell-to-cell electrical resistance variation, and low cell-to-cell variation in magnetic properties. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.
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34.发明申请公开(公告)号：US20210408297A1
公开(公告)日：2021-12-30
申请号：US17447393
申请日：2021-09-10
Applicant: Micron Technology, Inc.
Inventor： Witold Kula , Gurtej S. Sandhu , John A. Smythe
IPC: H01L29/786 , H01L29/24 , H01L27/105 , H01L21/02 , H01L29/66
Abstract: A transistor comprising a channel region on a material is disclosed. The channel region comprises a two-dimensional material comprising opposing sidewalls and oriented perpendicular to the material. A gate dielectric is on the two-dimensional material and gates are on the gate dielectric. Semiconductor devices and systems including at least one transistor are disclosed, as well as methods of forming a semiconductor device.
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公开(公告)号：US10720569B2
公开(公告)日：2020-07-21
申请号：US16434634
申请日：2019-06-07
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Manzar Siddik , Suresh Ramarajan , Johnathan D. Harms
Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.
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Patent Agency Ranking
公开(公告)号：US10454024B2
公开(公告)日：2019-10-22
申请号：US14193979
申请日：2014-02-28
Applicant: Micron Technology, Inc.
Inventor： Manzar Siddik , Witold Kula
Abstract: A magnetic cell includes a magnetic region formed from a precursor magnetic material. The precursor magnetic material included a diffusible species and at least one other species. An oxide region is disposed between the magnetic region and another magnetic region, and an amorphous region is proximate to the magnetic region. The amorphous region includes an attracter material that has a chemical affinity for the diffusible species that is higher than a chemical affinity of the at least one other species for the diffusible species. Thus, the diffusible species is transferred from the precursor magnetic material to the attracter material, forming a depleted magnetic material. The removal of the diffusible species and the amorphous nature of the region of the attracter material promotes crystallization of the depleted magnetic material, which enables high tunnel magnetoresistance and high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.
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公开(公告)号：US10396278B2
公开(公告)日：2019-08-27
申请号：US15986487
申请日：2018-05-22
Applicant: Micron Technology, Inc.
Inventor： Manzar Siddik , Andy Lyle , Witold Kula
Abstract: A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magnetoresistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.
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公开(公告)号：US10276781B2
公开(公告)日：2019-04-30
申请号：US15952507
申请日：2018-04-13
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Sunil Murthy , Witold Kula
Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.
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公开(公告)号：US20180294403A1
公开(公告)日：2018-10-11
申请号：US16006588
申请日：2018-06-12
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Manzar Siddik , Suresh Ramarajan , Jonathan D. Harms
CPC classification number: H01L43/02 , G11C11/161 , H01L27/224 , H01L43/08 , H01L43/10
Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.
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公开(公告)号：US20180287053A1
公开(公告)日：2018-10-04
申请号：US16000272
申请日：2018-06-05
Applicant: Micron Technology, Inc.
Inventor： Gurtej S. Sandhu , Witold Kula
CPC classification number: H01L43/10 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/226 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: A magnetic cell includes a free region between an intermediate oxide region (e.g., a tunnel barrier) and a secondary oxide region. Both oxide regions may be configured to induce magnetic anisotropy (“MA”) with the free region, enhancing the MA strength of the free region. A getter material proximate to the secondary oxide region is formulated and configured to remove oxygen from the secondary oxide region, reducing an oxygen concentration and an electrical resistance of the secondary oxide region. Thus, the secondary oxide region contributes only minimally to the electrical resistance of the cell core. Embodiments of the present disclosure therefore enable a high effective magnetoresistance, low resistance area product, and low programming voltage along with the enhanced MA strength. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.
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