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31.发明授权
公开(公告)号：US4188812A
公开(公告)日：1980-02-19
申请号：US685
申请日：1979-01-03
摘要： An installation for the production of continuously cold rolled sheets or strips wherein the continuous operation is effected when a coil of the cold rolled sheet metal or strip is directly and effectively produced from a coil of the hot rolled sheet metal or strip.
摘要翻译： 一种用于生产连续冷轧板材或带材的装置，其中当冷轧金属板或板条的线圈由热轧板金属或带材的线圈直接有效地制造时，进行连续操作。
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公开(公告)号：US08352836B2
公开(公告)日：2013-01-08
申请号：US12683072
申请日：2010-01-06
申请人： Takashi Furuya
发明人： Takashi Furuya
CPC分类号： H04L1/0079
摘要： An error addition apparatus receives a data signal D having a frame format having a specific signal inserted into its front, adds errors to the data signal D, and outputs a resulting signal. The apparatus has an error addition regulation unit for receiving a frame synchronization signal F, indicative of a timing at which the front of the frame of the data signal has been inputted, and regulating the errors such that the errors are added to positions other than a region of the specific signal. Accordingly, errors are not added to a specific signal.
摘要翻译： 错误添加装置接收具有插入其前端的特定信号的帧格式的数据信号D，将错误加到数据信号D上，并输出结果信号。 该装置具有误差附加调节单元，用于接收表示数据信号的帧的前部已被输入的定时的帧同步信号F，并且调整误差使得误差被添加到除 区域的具体信号。 因此，不向特定信号添加错误。
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33.发明授权公开(公告)号：US07987395B2
公开(公告)日：2011-07-26
申请号：US12501647
申请日：2009-07-13
申请人： Masahiro Kuroda , Takashi Furuya , Kazuhiko Ishibe
发明人： Masahiro Kuroda , Takashi Furuya , Kazuhiko Ishibe
IPC分类号： G06F11/00
CPC分类号： H04L1/0084 , H04L1/20
摘要： A degree of conformity of error distribution of a digital signal to the Poisson distribution is quantitatively determined. The digital signal including error data, which is randomly generated at a predetermined error rate, is divided into data number of measurement units, wherein the data number is determined on the basis of the error rate. A sample number of the measurement units are acquired from the measurement units, and the number of errors contained in each measurement unit is measured as a measurement value. Further, the number of times of occurrence of each measurement value is calculated, a Poisson distribution function is calculated, and a degree of a bond between the Poisson distribution and the distribution of the number of times of occurrence is determined by using the chi-square goodness-of-fit test method.
摘要翻译： 定量地确定数字信号的误差分布与泊松分布的一致性程度。 包括以预定错误率随机产生的误差数据的数字信号被划分为测量单位的数据数，其中基于错误率确定数据编号。 从测量单元获取测量单元的样本数，并且测量每个测量单元中包含的误差的数量作为测量值。 此外，计算每个测量值的出现次数，计算泊松分布函数，并且通过使用卡方确定泊松分布与发生次数分布之间的键的程度 适合度测试方法。
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公开(公告)号：US20110003413A1
公开(公告)日：2011-01-06
申请号：US12766684
申请日：2010-04-23
IPC分类号： H01L21/20
CPC分类号： C23C16/56 , H01L21/02395 , H01L21/02543 , H01L33/007 , H01L33/46
摘要： In a manufacturing method of a semiconductor photonic device substrate, before multi-layer films different in material composition are successively and gradually crystal-grown in one chamber, an inter-layer growth rate model showing a relation in growth rate between each layer is defined, a growth rate of a film corresponding to at least one or more layers is obtained by actual crystal growth using an individual substrate, a growth rate of a film corresponding to other layers is estimated from the obtained growth rate by the inter-layer growth rate model, and a growth time is determined in accordance with a film thickness of each layer of the semiconductor photonic device substrate based on the actually obtained growth rate and the estimated growth rate. These steps are carried out by using a computer system connected to an MOCVD equipment, and then, a crystal growth of the semiconductor photonic device substrate is performed.
摘要翻译： 在半导体光子器件衬底的制造方法中，在不同材料组成的多层膜在一个室中连续逐渐晶体生长的情况下，定义表示各层之间的生长速度关系的层间生长速率模型， 通过使用单个基板的实际晶体生长获得对应于至少一个或多个层的膜的生长速率，通过层间生长速率模型从获得的生长速率估计与其它层相对应的膜的生长速率 根据实际获得的生长速度和估计的生长速度，根据半导体光子器件基板的各层的膜厚确定生长时间。 这些步骤通过使用连接到MOCVD设备的计算机系统进行，然后执行半导体光子器件衬底的晶体生长。
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公开(公告)号：US20070023768A1
公开(公告)日：2007-02-01
申请号：US11285388
申请日：2005-11-23
IPC分类号： H01L33/00
摘要： A semiconductor light emitting element has a first conductive-type cladding layer, an undoped active layer, a second conductive-type cladding layer, and a second conductive-type current spreading layer that are formed on a first conductive-type semiconductor substrate. The second conductive-type cladding layer has a first dopant suppressing layer formed at a portion in the second conductive-type cladding layer, the portion being not in contact with the active layer. The first dopant suppressing layer has a dopant concentration lower than a region in the vicinity of the first dopant suppressing layer.
摘要翻译： 半导体发光元件具有形成在第一导电型半导体基板上的第一导电型包覆层，未掺杂的有源层，第二导电型覆盖层和第二导电型电流扩展层。 第二导电型包覆层具有形成在第二导电型包覆层的一部分上的第一掺杂剂抑制层，该部分不与有源层接触。 第一掺杂剂抑制层的掺杂剂浓度低于第一掺杂剂抑制层附近的区域。
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36.发明授权
公开(公告)号：US5393445A
公开(公告)日：1995-02-28
申请号：US176645
申请日：1994-01-03
申请人： Takashi Furuya , Naoki Hayashi
发明人： Takashi Furuya , Naoki Hayashi
CPC分类号： H01F1/0578 , H01F1/0533 , H01F1/0572 , H01F1/059 , Y10S428/90 , Y10T428/2982 , Y10T428/2991 , Y10T428/2998
摘要： A material for a rare-earth bonded magnet is prepared by coating a rare-earth magnetic powder with a heat resisting addition polymerizable thermosetting resin consisting essentially of a monomer or polymer of 2,2-bis(cyanatophenyl) propane in an amount of not more than 2 wt % based on the weight of the magnetic powder. The oxidation of the rare-earth magnetic powder is thereby prevented or retarded by triazine rings formed in the coating film of the heat resisting addition polymerizable thermosetting resin. A rare-earth bonded magnet having improved heat resistance is prepared by agglomerating the coated rare-earth magnetic powder with a binder. The heat resistance of the bonded magnet is further improved by curing the heat resisting addition polymerizable thermosetting resin in a vacuum and by adding an organometallic salt as a metallic catalyst, to thereby improve the integrity of the coating film.
摘要翻译： 通过用基本上由2,2-双（氰基苯基）丙烷的单体或聚合物组成的耐热性可加聚热固性树脂涂覆稀土磁性粉末，制备稀土粘结磁体的材料，其量不超过 超过2重量％，基于磁粉的重量。 由此，可以通过在耐热性可加聚热固性树脂的涂膜中形成的三嗪环来防止或延缓稀土类磁粉的氧化。 通过将涂覆的稀土磁性粉末与粘合剂团聚来制备具有改善的耐热性的稀土粘结磁体。 通过在真空中固化耐热性可加聚热固性树脂并通过添加作为金属催化剂的有机金属盐，进一步提高粘结磁体的耐热性，从而提高涂膜的完整性。
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公开(公告)号：US5368088A
公开(公告)日：1994-11-29
申请号：US42860
申请日：1993-04-05
申请人： Takashi Furuya , Hidemaro Takeuchi , Akio Kasama , Yasuo Itoh , Motoya Fujii , Hideki Oka , Shogo Matsumura , Kunimasa Sasaki , Keiichi Yamamoto
发明人： Takashi Furuya , Hidemaro Takeuchi , Akio Kasama , Yasuo Itoh , Motoya Fujii , Hideki Oka , Shogo Matsumura , Kunimasa Sasaki , Keiichi Yamamoto
IPC分类号： B22D11/06
CPC分类号： B22D11/0651 , B22D11/064 , B22D11/0697
摘要： Molten metal is supplied to a pouring basin formed between cooling members, such as movable cooling drums. A closed space is formed at a meniscus area whereat any one of the cooling members starts to come into contact with the molten metal, and a soluble gas or a mixture of soluble and insoluble gases is supplied to and filled in the closed space, thereby covering the meniscus area with the gas or the mixture. This arrangement enables a continuous casting of a thin metal sheet without surface cracks and having excellent surface characteristics.
摘要翻译： 将熔融金属供应到形成在诸如可移动冷却鼓之类的冷却构件之间的倾倒盆中。 在弯液面区域处形成封闭空间，其中任何一个冷却构件开始与熔融金属接触，并且将可溶性气体或可溶性和不溶性气体的混合物供给并填充在封闭空间中，从而覆盖 弯液面与气体或混合物。 这种布置使得能够连续铸造薄金属片而没有表面裂纹并且具有优异的表面特性。
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公开(公告)号：US08367431B2
公开(公告)日：2013-02-05
申请号：US12766684
申请日：2010-04-23
IPC分类号： G01R31/26
CPC分类号： C23C16/56 , H01L21/02395 , H01L21/02543 , H01L33/007 , H01L33/46
摘要： In a manufacturing method of a semiconductor photonic device substrate, before multi-layer films different in material composition are successively and gradually crystal-grown in one chamber, an inter-layer growth rate model showing a relation in growth rate between each layer is defined, a growth rate of a film corresponding to at least one or more layers is obtained by actual crystal growth using an individual substrate, a growth rate of a film corresponding to other layers is estimated from the obtained growth rate by the inter-layer growth rate model, and a growth time is determined in accordance with a film thickness of each layer of the semiconductor photonic device substrate based on the actually obtained growth rate and the estimated growth rate. These steps are carried out by using a computer system connected to an MOCVD equipment, and then, a crystal growth of the semiconductor photonic device substrate is performed.
摘要翻译： 在半导体光子器件衬底的制造方法中，在不同材料组成的多层膜在一个室中连续逐渐晶体生长的情况下，定义表示各层之间的生长速度关系的层间生长速率模型， 通过使用单个基板的实际晶体生长获得对应于至少一个或多个层的膜的生长速率，通过层间生长速率模型从获得的生长速率估计与其它层相对应的膜的生长速率 根据实际获得的生长速度和估计的生长速度，根据半导体光子器件基板的各层的膜厚确定生长时间。 这些步骤通过使用连接到MOCVD设备的计算机系统进行，然后执行半导体光子器件衬底的晶体生长。
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公开(公告)号：US07723731B2
公开(公告)日：2010-05-25
申请号：US11907895
申请日：2007-10-18
申请人： Taichiroo Konno , Takashi Furuya
发明人： Taichiroo Konno , Takashi Furuya
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/405
摘要： A first conductivity type cladding layer 2, a first side multilayer 9, an active layer 4, a second side multilayer 10, and a second conductivity type cladding layer 3 are provided in a semiconductor light emitting device. The first side multilayer 9 is provided between the first conductivity type cladding layer 2 and the active layer 4, and the second side multilayer 10 is provided between the active layer 4 and the second conductivity type cladding layer 3. Each of the multilayer 9, 10 is transparent with respect to the light generated at the active layer 4, having a bandgap larger than that of the active layer 4, and lattice-matched with the active layer 4.
摘要翻译： 在半导体发光器件中设置第一导电型包层2，第一侧多层9，有源层4，第二侧多层10和第二导电型包覆层3。 在第一导电型包覆层2和有源层4之间设置第一侧面叠层体9，在有源层4和第二导电型覆盖层3之间设置第二侧面层叠体10。 相对于在有源层4处产生的光具有比有源层4的带隙更大的透光性，并且与有源层4晶格匹配。
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40.发明申请Pyrazinecarboxamide Derivatives and Plant Disease Controlling Agents Containing the Same 有权吡嗪甲酰胺衍生物和含有其的植物病害防治剂公开(公告)号：US20090233934A1
公开(公告)日：2009-09-17
申请号：US12086582
申请日：2006-12-21
IPC分类号： A01N43/58 , C07D237/24
CPC分类号： C07D241/24 , A01N43/60 , C07D401/12 , C07D403/12 , C07D405/12
摘要： The present invention provides the compounds represented by the general formula (I): [wherein X is a halogen atom or an (C1-C3)alkyl group which may be substituted with a halogen atom(s); Y is a hydrogen or halogen atom, or a cyano, a (C1-C3)alkyl or (C1-C3)alkoxy group; R is a hydrogen or halogen atom, a cyano group, or a (C1-C6)alkyl, (C2-C6)alkenyl group, (C2-C6)alkynyl, (C1-C6)alkoxy, (C2-C6)alkenyloxy, (C2-C6)alkynyloxy, (C1-C6)alkylthio, (C1-C6)alkylsulfinyl or (C1-C6)alkylsulfonyl group which may be substituted with a halogen atom(s), a (C1-C6)alkoxycarbonyl group, a (C1-C6)alkoxyimino(C1-C3)alkyl group, a tri(C1-C10)alkylsilyl group, or a phenyl, phenoxy, pyridyloxy or pyrimidyloxy group which may be substituted with a substituent(s); n is an integer of 1 to 5], which compounds cause reduced loads of deleterious, harmful effects to the earth environment, and exhibit a widened controlling spectrum at lowered chemical application rates, thereby finding useful application as a plant disease controlling agent for agricultural and horticultural uses.
摘要翻译： 本发明提供由通式（I）表示的化合物：[其中X为可被卤原子取代的卤素原子或（C1-C3）烷基）; Y是氢或卤原子，或氰基，（C1-C3）烷基或（C1-C3）烷氧基; （C 1 -C 6）烷基，（C 2 -C 6）烯基，（C 2 -C 6）炔基，（C 1 -C 6）烷氧基，（C 2 -C 6）烯氧基， （C 1 -C 6）烷氧基羰基，（C 1 -C 6）烷硫基，（C 1 -C 6）烷基亚磺酰基或可被卤原子取代的（C 1 -C 6）烷基磺酰基， （C1-C6）烷氧基亚氨基（C1-C3）烷基，三（C1-C10）烷基甲硅烷基，或可被取代基取代的苯基，苯氧基，吡啶氧基或嘧啶基氧基; n为1〜5的整数]，这种化合物对地球环境造成有害的有害影响的负荷减少，化学施用率降低，控制谱扩大，从而有助于农业和植物病害防治剂的应用。 园艺用途。
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