OPU frame generating device and OPU frame test device
    1.
    发明授权
    OPU frame generating device and OPU frame test device 有权
    OPU帧生成装置和OPU帧测试装置

    公开(公告)号:US09065581B2

    公开(公告)日:2015-06-23

    申请号:US13433370

    申请日:2012-03-29

    IPC分类号: H04J3/16 H04J3/14

    摘要: An OPU frame generating device includes a frequency setting unit that sets a frequency corresponding to a bit rate of data which can be stored in a payload area, a parameter calculating unit that calculates a parameter Cm indicating an integer part of the amount of data included in the payload area using the set frequency, a data inserting unit that outputs a timing signal determined by the parameter Cm and inserts data at a position determined by the parameter Cm in the payload area, a data generating unit that generates data in synchronization with the timing signal, and a frame generating unit that generates an OPU frame having the payload area into which the data is inserted.

    摘要翻译: OPU帧产生装置包括:频率设定单元,其设定与能够存储在有效载荷区域中的数据的比特率对应的频率;参数计算单元,计算表示包含在数据量的数据量的整数部分的参数Cm 使用设定频率的有效负载区域,输出由参数Cm确定的定时信号并在由有效载荷区域中的参数Cm确定的位置插入数据的数据插入单元,与定时同步地生成数据的数据生成单元 信号和帧生成单元,其生成具有插入数据的有效载荷区域的OPU帧。

    M-sequence generator, providing method thereof, and random error generating device in which M-sequence generator is used
    2.
    发明授权
    M-sequence generator, providing method thereof, and random error generating device in which M-sequence generator is used 有权
    M序列发生器,其提供方法以及使用M序列发生器的随机误差产生装置

    公开(公告)号:US08433740B2

    公开(公告)日:2013-04-30

    申请号:US12769341

    申请日:2010-04-28

    IPC分类号: G06F7/00 G06F1/02

    CPC分类号: H03K3/84 G06F7/584 H04J13/00

    摘要: An M-sequence generator includes EXCLUSIVE-OR gates feeding back pieces of bit data from m number of series registers to the registers in response to a clock. A period of a cyclic group {(α1k), (α2k), (α3k), . . . } falls within a maximum period (2m−1), the group being produced as an element (αk) obtained by raising a root α of a polynomial to a specified power value k (k≧2), which have the terms in polynomials of a Galois field GF(2m). In a multiplying unit including the gates, pieces of bit data is fed into one end of the multiplying unit in response to the clock while the element (αk) is fed into the other end. The multiplying unit performs Galois field multiplication between each piece of bit data and the element (αk), the gate supplies the multiplication result as feedback bit data to the respective registers.

    摘要翻译: M序列发生器包括异或门,以响应于时钟从M个串联寄存器向寄存器反馈位数据。 循环群{(α1k),(α2k),(α3k))的周期。 。 。 }落在最大周期(2m-1)内,该组被作为通过将多项式的根α提高到具有多项式中的项的指定功率值k(k> = 2)而获得的元素(alphak) 的伽罗瓦域GF(2m)。 在包括门的乘法单元中,当将元素(alphak)馈送到另一端时,位数据被送入乘法单元的一端。 乘法单元在每个比特数据和元素(alphak)之间执行Galois域乘法,门将乘法结果作为反馈比特数据提供给各个寄存器。

    ERROR ADDITION APPARATUS
    4.
    发明申请
    ERROR ADDITION APPARATUS 有权
    错误添加装置

    公开(公告)号:US20100174971A1

    公开(公告)日:2010-07-08

    申请号:US12683072

    申请日:2010-01-06

    申请人: Takashi Furuya

    发明人: Takashi Furuya

    IPC分类号: H03M13/09 G06F11/10

    CPC分类号: H04L1/0079

    摘要: An error addition apparatus receives a data signal D having a frame format having a specific signal inserted into its front, adds errors to the data signal D, and outputs a resulting signal. The apparatus has an error addition regulation unit for receiving a frame synchronization signal F, indicative of a timing at which the front of the frame of the data signal has been inputted, and regulating the errors such that the errors are added to positions other than a region of the specific signal. Accordingly, errors are not added to a specific signal.

    摘要翻译: 错误添加装置接收具有插入其前端的特定信号的帧格式的数据信号D,将错误加到数据信号D上,并输出结果信号。 该装置具有误差附加调节单元,用于接收表示数据信号的帧的前部已被输入的定时的帧同步信号F,并且调整误差使得误差被添加到除 区域的具体信号。 因此,不向特定信号添加错误。

    Endless transmission belt
    6.
    发明授权
    Endless transmission belt 失效
    无端传动皮带

    公开(公告)号:US4838844A

    公开(公告)日:1989-06-13

    申请号:US148785

    申请日:1988-01-27

    IPC分类号: F16G5/18

    CPC分类号: F16G5/18

    摘要: An endless transmission belt is formed of a plurality of symmetrical V blocks. Each V block comprises upper and lower portions disposed approximately parallel to each other, and two pillar portions connecting the upper and lower portions. The block includes side openings on both sides, and a center opening between the pillar portions. The upper and lower portions have wavy configurations, so that the upper and lower portions have flexibility against the force applied from sheaves to the V block.

    摘要翻译: 无级传动带由多个对称的V形块形成。 每个V块包括彼此大致平行地设置的上部和下部,以及连接上部和下部的两个柱部。 该块包括两侧的侧开口和柱部之间的中心开口。 上部和下部具有波形构造,使得上部和下部具有抵抗从滑轮施加到V形块的力的柔性。

    M-SEQUENCE GENERATOR, PROVIDING METHOD THEREOF, AND RANDOM ERROR GENERATING DEVICE IN WHICH M-SEQUENCE GENERATOR IS USED
    7.
    发明申请
    M-SEQUENCE GENERATOR, PROVIDING METHOD THEREOF, AND RANDOM ERROR GENERATING DEVICE IN WHICH M-SEQUENCE GENERATOR IS USED 有权
    M序列发生器,其提供方法和使用M序列发生器的随机错误发生装置

    公开(公告)号:US20100205235A1

    公开(公告)日:2010-08-12

    申请号:US12769341

    申请日:2010-04-28

    IPC分类号: G06F7/552 G06F7/52

    CPC分类号: H03K3/84 G06F7/584 H04J13/00

    摘要: An M-sequence generator includes EXCLUSIVE-OR gates feeding back pieces of bit data from m number of series registers to the registers in response to a clock. A period of a cyclic group {(α1k), (α2k), (α3k), . . . } falls within a maximum period (2m-1), the group being produced as an element (αk) obtained by raising a root α of a polynomial to a specified power value k (k≧2), which have the terms in polynomials of a Galois field GF(2m). In a multiplying unit including the gates, pieces of bit data is fed into one end of the multiplying unit in response to the clock while the element (αk) is fed into the other end. The multiplying unit performs Galois field multiplication between each piece of bit data and the element (αk), the gate supplies the multiplication result as feedback bit data to the respective registers.

    摘要翻译: M序列发生器包括异或门,以响应于时钟从M个串联寄存器向寄存器反馈位数据。 循环群{(α1k),(α2k),(α3k))的周期。 。 。 }落在最大周期(2m-1)内,该组被作为通过将多项式的根α提高到指定的功率值k(k≥2)而获得的元素(αk),其具有多项式中的项 伽罗瓦域GF(2m)。 在包括门的乘法单元中,当将元件(αk)馈送到另一端时,位数据被送入乘法单元的一端以响应于时钟。 乘法单元在每个比特数据和元素(αk)之间执行伽罗瓦域相乘,门将相乘结果作为反馈比特数据提供给各个寄存器。

    Semiconductor light emitting device
    8.
    发明申请
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号:US20080093619A1

    公开(公告)日:2008-04-24

    申请号:US11907895

    申请日:2007-10-18

    IPC分类号: H01L27/15

    摘要: A first conductivity type cladding layer 2, a first side multilayer 9, an active layer 4, a second side multilayer 10, and a second conductivity type cladding layer 3 are provided in a semiconductor light emitting device. The first side multilayer 9 is provided between the first conductivity type cladding layer 2 and the active layer 4, and the second side multilayer 10 is provided between the active layer 4 and the second conductivity type cladding layer 3. Each of the multilayer 9, 10 is transparent with respect to the light generated at the active layer 4, having a bandgap larger than that of the active layer 4, and lattice-matched with the active layer 4.

    摘要翻译: 在半导体发光器件中设置第一导电型包层2,第一侧多层9,有源层4,第二侧多层10和第二导电型包覆层3。 在第一导电型包覆层2和有源层4之间设置第一侧面叠层体9,在有源层4和第二导电型覆盖层3之间设置第二侧面层叠体10。 相对于在有源层4处产生的光具有比有源层4的带隙更大的透光性,并且与有源层4晶格匹配。

    Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
    10.
    发明授权
    Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method 失效
    氮化物晶体的制备方法,混合物,液相生长法,氮化物晶体,氮化物晶体粉末和气相生长法

    公开(公告)号:US06270569B1

    公开(公告)日:2001-08-07

    申请号:US09096458

    申请日:1998-06-11

    IPC分类号: C30B1104

    摘要: A Group III metal element is heated so as to melt, a gas NH3 containing nitrogen atoms is injected into a melt 3 of the Group III metal element at a temperature lower than the melting point of a nitride to be obtained, thereby producing a nitride microcrystal of the Group III element having high wettability with the melt 3 in the melt 3 of the Group III metal element. A mixture of the Group III nitride microcrystal obtained as mentioned above and the Group III metal element solution is used as a starting material of a liquid phase growth or Group III nitride powders obtained by removing the Group III metal material from the mixture are used as a starting material of a vapor phase growth. Further, a seed crystal or a substrate crystal is immersed in a melt of a Group III element such as gallium, bubbles of a gas containing nitrogen such as ammonia are intermittently come into contact with the surface of the crystal, and the Group III element and the gas containing nitrogen are allowed to react with each other on the surface of the seed crystal or the substrate crystal, thereby allowing the nitride crystal of the Group III element to be grown on the surface of the seed crystal or substrate crystal.

    摘要翻译: 将III族金属元素加热熔化,将含有氮原子的气体NH 3在低于所得氮化物的熔点的温度下注入到III族金属元素的熔体3中,从而制备氮化物微晶 的III族元素与III族金属元素的熔体3中的熔体3具有高润湿性。 使用如上所述获得的III族氮化物微晶和III族金属元素溶液的混合物作为液相生长的起始材料或通过从混合物中除去第III族金属材料获得的III族氮化物粉末作为 气相生长的原料。 此外,将种子晶体或基板晶体浸渍在诸如镓的III族元素的熔体中,包含诸如氨的氮气的气体的气泡间歇地与晶体的表面接触,并且III族元素和 允许含氮的气体在晶种或基板晶体的表面上彼此反应,从而允许III族元素的氮化物晶体生长在晶种或基板晶体的表面上。