公开(公告)号：US20130277646A1

公开(公告)日：2013-10-24

申请号：US13721925

申请日：2012-12-20

申请人： Nobuyoshi SAITO ,  Tomomasa Ueda ,  Hajime Yamaguchi ,  Kentaro Miura ,  Shintaro Nakano ,  Tatsunori Sakano

发明人： Nobuyoshi SAITO ,  Tomomasa Ueda ,  Hajime Yamaguchi ,  Kentaro Miura ,  Shintaro Nakano ,  Tatsunori Sakano

IPC分类号： H01L51/52

CPC分类号： H01L51/52 ,  H01L27/3227 ,  H01L27/326

摘要： According to one embodiment, a display panel includes a substrate, a switching element, a pixel electrode, an organic light emitting layer, an opposite electrode, a detecting electrode, and an insulating layer. The substrate has a major surface. The switching element is provided on the major surface. The switching element includes a semiconductor layer. The pixel electrode is provided on the major surface. The pixel electrode is electrically connected to the switching element. The organic light emitting layer is provided on the pixel electrode. The opposite electrode is provided on the organic light emitting layer. The detecting electrode is provided between the substrate and at least a part of the pixel electrode. The detecting electrode includes at least one element included in the semiconductor layer. The insulating layer is provided between the pixel electrode and the detecting electrode.

摘要翻译： 根据一个实施例，显示面板包括基板，开关元件，像素电极，有机发光层，相对电极，检测电极和绝缘层。 基板具有主表面。 开关元件设置在主表面上。 开关元件包括半导体层。 像素电极设置在主表面上。 像素电极电连接到开关元件。 有机发光层设置在像素电极上。 相对电极设置在有机发光层上。 检测电极设置在基板和像素电极的至少一部分之间。 检测电极包括包含在半导体层中的至少一个元件。 绝缘层设置在像素电极和检测电极之间。

公开(公告)号：US20110164025A1

公开(公告)日：2011-07-07

申请号：US13052442

申请日：2011-03-21

申请人： Nobuyoshi SAITO ,  Tomomasa Ueda ,  Yujiro Hara

发明人： Nobuyoshi SAITO ,  Tomomasa Ueda ,  Yujiro Hara

IPC分类号： G09G5/00

CPC分类号： G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2320/043 ,  H01L51/001 ,  H01L51/0011 ,  H01L51/56

摘要： [Problem] By improving the accuracy of compensation for a threshold voltage shift of a driving transistor that controls a current supplied to a current-driven type self light-emitting element, excellent display performance is maintained over an extended period of time.[Solving Means] A pixel circuit includes a driving transistor Dr connected at its drain to a light-emitting element 11 and connected at its source to a power supply line NL; a capacitor Ck connected at its one end to a gate of the driving transistor Dr; a threshold voltage detection transistor Det connected between the drain of the driving transistor Dr and an other end of the capacitor Ck; and a reset transistor Rst connected between the source and gate of the driving transistor Dr. By charging the gate of the driving transistor Dr to a predetermined value through the reset transistor Rst and discharging charge at the other end of the capacitor Ck through the threshold voltage detection transistor Det, a potential difference between both ends of the capacitor Ck is set as a threshold voltage of the driving transistor Dr.

摘要翻译： [问题]通过提高控制提供给电流驱动型自发光元件的电流的驱动晶体管的阈值电压偏移的补偿精度，能够在延长的时间段内保持优异的显示性能。 [解决方案]像素电路包括在其漏极连接到发光元件11并在其源极处连接到电源线NL的驱动晶体管Dr; 在其一端连接到驱动晶体管Dr的栅极的电容器Ck; 连接在驱动晶体管Dr的漏极和电容器Ck的另一端之间的阈值电压检测晶体管Det; 以及连接在驱动晶体管Dr的源极和栅极之间的复位晶体管Rst通过复位晶体管Rst将驱动晶体管Dr的栅极充电至预定值，并通过阈值电压对电容器Ck的另一端放电电荷 检测晶体管Det，将电容器Ck的两端之间的电位差设定为驱动晶体管Dr的阈值电压

公开(公告)号：US20100127266A1

公开(公告)日：2010-05-27

申请号：US12620112

申请日：2009-11-17

申请人： Nobuyoshi SAITO ,  Tomomasa Ueda ,  Shintaro Nakano ,  Shuichi Uchikoga

发明人： Nobuyoshi SAITO ,  Tomomasa Ueda ,  Shintaro Nakano ,  Shuichi Uchikoga

IPC分类号： H01L33/00 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L27/1225 ,  H01L27/127 ,  H01L27/3244 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2227/323

摘要： A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; a source electrode and a drain electrode provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source electrode and the drain electrode above the gate electrode.

摘要翻译： 薄膜晶体管包括：绝缘层; 设置在所述绝缘层上的栅电极; 设置在栅电极上的栅极绝缘膜; 设置在所述栅极绝缘膜上的半导体层，所述半导体层由氧化物形成; 设置在半导体层上的源电极和漏电极; 以及设置在源电极和漏电极与半导体层之间的沟道保护层。 源电极与栅电极的一端相对。 漏电极与栅电极的另一端相对。 另一端与一端相反。 漏极与源电极分开。 沟道保护层覆盖半导体层的一部分的侧面的至少一部分。 半导体层的一部分没有被栅电极上方的源电极和漏电极覆盖。

公开(公告)号：US07054187B2

公开(公告)日：2006-05-30

申请号：US10981508

申请日：2004-11-05

申请人： Tatsuya Kishi ,  Minoru Amano ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Yoshihisa Iwata

发明人： Tatsuya Kishi ,  Minoru Amano ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Yoshihisa Iwata

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first writing wiring extending in a first direction on or below the magnetoresistance effect element, a center of gravity of an axial cross section of the wiring being apart from a center of thickness at the center of gravity, and the center of gravity being eccentric toward the magnetoresistance effect element; and a writing circuit configured to pass a current through the first writing wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

公开(公告)号：US06949779B2

公开(公告)日：2005-09-27

申请号：US10653098

申请日：2003-09-03

申请人： Tadashi Kai ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Yoshiaki Saito

发明人： Tadashi Kai ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Yoshiaki Saito

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L29/76

CPC分类号： G11C11/15 ,  G11C11/16 ,  Y10T428/24917

摘要： There are provided a first reference layer, in which a direction of magnetization is fixed, and a storage layer including a main body, in which a length in an easy magnetization axis direction is longer than a length in a hard magnetization axis direction, and a projecting portion provided to a central portion of the main body in the hard magnetization axis direction, a direction of magnetization of the storage layer being changeable in accordance with an external magnetic field.

公开(公告)号：US06900490B2

公开(公告)日：2005-05-31

申请号：US10649986

申请日：2003-08-28

申请人： Yoshiaki Asao ,  Hiroaki Yoda ,  Minoru Amano ,  Tomomasa Ueda

发明人： Yoshiaki Asao ,  Hiroaki Yoda ,  Minoru Amano ,  Tomomasa Ueda

IPC分类号： G11C11/15 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/22 ,  H01L29/76 ,  H01L43/08

CPC分类号： H01L43/08 ,  B82Y10/00 ,  H01L27/228

摘要： In a magnetic random access memory for generating an inductive magnetic flux by passing current into write wirings disposed closely to MTJ elements, whose resistance values varying depending on the magnetization array state of two magnetic layers of MTJ elements including two magnetic layers that hold a non-magnetic layer correspond to the stored information of “0”/“1”, and writing information by varying the magnetization direction of a free layer of the MTJ elements, the shape of the MTJ elements is warped so as to coincide substantially with the magnetic field curve generated from the write wirings.

摘要翻译： 在磁性随机存取存储器中，用于通过将电流传递到靠近MTJ元件布置的写布线中来产生感应磁通量，其电阻值根据包括两个磁性层的MTJ元件的两个磁性层的磁化阵列状态而变化， 磁性层对应于“0”/“1”的存储信息，并且通过改变MTJ元件的自由层的磁化方向来写入信息，MTJ元件的形状被扭曲以与磁场大体一致 从写布线产生的曲线。

公开(公告)号：US06765824B2

公开(公告)日：2004-07-20

申请号：US10391423

申请日：2003-03-19

申请人： Tatsuya Kishi ,  Yoshiaki Saito ,  Minoru Amano ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Tomomasa Ueda

发明人： Tatsuya Kishi ,  Yoshiaki Saito ,  Minoru Amano ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Tomomasa Ueda

IPC分类号： G11C1115

CPC分类号： G11C11/15 ,  G11C11/5607

摘要： There is provided a magnetoresistance element in which a shape of a free ferromagnetic layer includes a first portion with a parallelogrammic contour, and second portions that protrude from a pair of opposite corners of the first portion respectively in a main direction parallel to a pair of opposite sides of the first portion, the shape is asymmetric with respect to a line that passes through a center of the first portion and is parallel to the main direction, and an axis of easy magnetization of the free ferromagnetic layer falls within a range defined by an acute angle that a first direction makes with a second direction, the first direction being substantially parallel to the main direction and the second direction being substantially parallel to the longest line segment that joins contours of the second portions.

摘要翻译： 提供了一种磁阻元件，其中自由铁磁层的形状包括具有平行四边形轮廓的第一部分，以及第二部分，其在与主要方向平行的一对相反侧的第一部分的一对相对的角部分别突出 第一部分的侧面，该形状相对于穿过第一部分的中心并且平行于主方向的线是不对称的，并且自由铁磁性层的容易磁化的轴线落在由 第一方向与第二方向形成的锐角，第一方向基本上平行于主方向，第二方向基本上平行于连接第二部分的轮廓的最长线段。

公开(公告)号：US09159836B2

公开(公告)日：2015-10-13

申请号：US13483593

申请日：2012-05-30

申请人： Shintaro Nakano ,  Tomomasa Ueda ,  Kentaro Miura ,  Nobuyoshi Saito ,  Tatsunori Sakano ,  Hajime Yamaguchi

发明人： Shintaro Nakano ,  Tomomasa Ueda ,  Kentaro Miura ,  Nobuyoshi Saito ,  Tatsunori Sakano ,  Hajime Yamaguchi

IPC分类号： H01L29/12 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/02266 ,  H01L21/02565 ,  H01L27/3244 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78603 ,  H01L51/0096 ,  H01L2251/5338

摘要： According to one embodiment, a thin film transistor includes a substrate, a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, a source electrode, and a drain electrode. The gate electrode is provided on a part of the substrate. The first insulating film covers the gate electrode. The oxide semiconductor film is provided on the gate electrode via the first insulating film. The second insulating film is provided on a part of the oxide semiconductor film. The source and drain electrodes are respectively connected to first and second portions of the oxide semiconductor film not covered with the second insulating film. The oxide semiconductor film includes an oxide semiconductor. Concentrations of hydrogen contained in the first and second insulating films are not less than 5×1020 atm/cm3, and not more than 1019 atm/cm3, respectively.

摘要翻译： 根据一个实施例，薄膜晶体管包括衬底，栅电极，第一绝缘膜，氧化物半导体膜，第二绝缘膜，源电极和漏电极。 栅电极设置在基板的一部分上。 第一绝缘膜覆盖栅电极。 氧化物半导体膜经由第一绝缘膜设置在栅电极上。 第二绝缘膜设置在氧化物半导体膜的一部分上。 源极和漏极分别连接到未被第二绝缘膜覆盖的氧化物半导体膜的第一和第二部分。 氧化物半导体膜包括氧化物半导体。 第一绝缘膜和第二绝缘膜中含有的氢的浓度分别为5×1020atm / cm 3以上1019atm / cm 3以下。

公开(公告)号：US08933444B2

公开(公告)日：2015-01-13

申请号：US13724294

申请日：2012-12-21

申请人： Nobuyoshi Saito ,  Kentaro Miura ,  Shintaro Nakano ,  Tatsunori Sakano ,  Tomomasa Ueda ,  Hajime Yamaguchi

发明人： Nobuyoshi Saito ,  Kentaro Miura ,  Shintaro Nakano ,  Tatsunori Sakano ,  Tomomasa Ueda ,  Hajime Yamaguchi

IPC分类号： H01L51/52 ,  H01L27/32 ,  H01L29/786

CPC分类号： H01L51/5203 ,  H01L27/3262 ,  H01L29/7869

摘要： According to one embodiment, a display device includes a substrate, a thin film transistor, a passivation film, a hydrogen barrier film, a pixel electrode, an organic light emitting layer, an opposite electrode, and a sealing film. The thin film transistor is provided on a major surface of the substrate. The thin film transistor includes a gate electrode, a gate insulating film, a semiconductor film, a first conducting portion, and a second conducting portion. The passivation film is provided on the thin film transistor. The hydrogen barrier film is provided on the passivation film. The pixel electrode is electrically connected to one of the first conducting portion and the second conducting portion. The organic light emitting layer is provided on the pixel electrode. The opposite electrode is provided on the organic light emitting layer. The sealing film is provided on the hydrogen barrier film and the opposite electrode.

摘要翻译： 根据一个实施例，显示装置包括基板，薄膜晶体管，钝化膜，氢阻挡膜，像素电极，有机发光层，相对电极和密封膜。 薄膜晶体管设置在基板的主表面上。 薄膜晶体管包括栅电极，栅极绝缘膜，半导体膜，第一导电部分和第二导电部分。 钝化膜设置在薄膜晶体管上。 氢屏障膜设置在钝化膜上。 像素电极电连接到第一导电部分和第二导电部分中的一个。 有机发光层设置在像素电极上。 相对电极设置在有机发光层上。 密封膜设置在氢阻挡膜和相对电极上。

公开(公告)号：US20120058601A1

公开(公告)日：2012-03-08

申请号：US13293298

申请日：2011-11-10

申请人： Nobuyoshi Saito ,  Tomomasa Ueda ,  Shintaro Nakano ,  Shuichi Uchikoga

发明人： Nobuyoshi Saito ,  Tomomasa Ueda ,  Shintaro Nakano ,  Shuichi Uchikoga

IPC分类号： H01L21/34

CPC分类号： H01L27/1225 ,  H01L27/127 ,  H01L27/3244 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2227/323

摘要： A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; source and drain electrodes provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source and drain electrodes above the gate electrode.

摘要翻译： 薄膜晶体管包括：绝缘层; 设置在所述绝缘层上的栅电极; 设置在栅电极上的栅极绝缘膜; 设置在所述栅极绝缘膜上的半导体层，所述半导体层由氧化物形成; 源电极和漏电极，设置在半导体层上; 以及设置在源电极和漏电极与半导体层之间的沟道保护层。 源电极与栅电极的一端相对。 漏电极与栅电极的另一端相对。 另一端与一端相反。 漏极与源电极分开。 沟道保护层覆盖半导体层的一部分的侧面的至少一部分。 半导体层的一部分不被栅电极上方的源电极和漏电极覆盖。