Composition and method for inhibition of microorganisms
    33.
    发明授权
    Composition and method for inhibition of microorganisms 失效
    用于抑制微生物的组合物和方法

    公开(公告)号:US08440448B2

    公开(公告)日:2013-05-14

    申请号:US12541606

    申请日:2009-08-14

    IPC分类号: C12N1/00 C12N1/12 C12N1/20

    摘要: Provided are methods of treating a surface of a food processing facility which has a first population of microorganisms disposed thereon. The method includes disposing on the surface a biofilm containing a second population of microorganisms or a population of microorganisms that can form a biofilm onto the surface of the food processing facility. The growth of the second microbial population and the formation of a biofilm comprising these microorganisms can then inhibit the growth of the first population of microorganisms.

    摘要翻译: 提供了处理其上布置有第一种微生物的食品加工设备的表面的方法。 该方法包括在表面上布置生物膜,该生物膜含有可在食品加工设备表面上形成生物膜的微生物第二群体或微生物群。 第二微生物群体的生长和包含这些微生物的生物膜的形成然后可以抑制第一群微生物的生长。

    TMR device with improved MgO barrier
    36.
    发明授权
    TMR device with improved MgO barrier 有权
    具有改善的MgO屏障的TMR器件

    公开(公告)号:US08202572B2

    公开(公告)日:2012-06-19

    申请号:US12927698

    申请日:2010-11-22

    IPC分类号: H01L21/00

    摘要: A method of forming a high performance magnetic tunnel junction (MTJ) is disclosed wherein the tunnel barrier includes at least three metal oxide layers. The tunnel barrier stack is partially built by depositing a first metal layer, performing a natural oxidation (NOX) process, depositing a second metal layer, and performing a second NOX process to give a MOX1/MOX2 configuration. An uppermost metal layer on the MOX2 layer is not oxidized until after the MTJ stack is completely formed and an annealing process is performed to drive unreacted oxygen in the MOX1 and MOX2 layers into the uppermost metal layer. In an alternative embodiment, a plurality of metal oxide layers is formed on the MOX1 layer before the uppermost metal layer is deposited. The resulting MTJ stack has an ultralow RA around 1 ohm-μm2 and maintains a high magnetoresistive ratio characteristic of a single metal oxide tunnel barrier layer.

    摘要翻译: 公开了一种形成高性能磁隧道结(MTJ)的方法,其中隧道势垒包括至少三个金属氧化物层。 通过沉积第一金属层,执行自然氧化(NOX)工艺,沉积第二金属层以及执行第二NOX工艺以产生MOX1 / MOX2配置来部分构建隧道势垒堆叠。 在MOX2层上的最上层的金属层直到MTJ堆叠完全形成之后才被氧化,并且进行退火处理以将MOX1和MOX2层中的未反应的氧气驱入最上层的金属层。 在替代实施例中,在最上层金属层被沉积​​之前,在MOX1层上形成多个金属氧化物层。 所得到的MTJ堆叠具有约1欧姆 - μm2的超低RA,并且保持单个金属氧化物隧道势垒层的高磁阻比特性。

    Control of enterohemorrhagic E. coli in farm animal drinking water
    38.
    发明授权
    Control of enterohemorrhagic E. coli in farm animal drinking water 有权
    控制农场动物饮用水中肠出血性大肠杆菌

    公开(公告)号:US08137705B2

    公开(公告)日:2012-03-20

    申请号:US11883425

    申请日:2006-01-25

    摘要: The present invention relates to a new composition and methods for preventing the transmission of enterohemorrhagic E. coli and other foodborne pathogens to farm animals. In accordance with one embodiment, a composition comprising lactic acid and acidic calcium sulfate, and a compound selected from the group consisting of caprylic acid, sodium benzoate, butyric acid and chlorine dioxide is provided as an inhibitor of the growth of enterohemorrhagic E. coli and other foodborne pathogens.

    摘要翻译: 本发明涉及用于预防肠出血性大肠杆菌和其他食源性病原体向农场动物传播的新组合物和方法。 根据一个实施方案,提供包含乳酸和酸性硫酸钙的组合物和选自辛酸,苯甲酸钠,丁酸和二氧化氯的化合物作为肠出血性大肠杆菌生长的抑制剂和 其他食源性病原体。

    TMR device with novel free layer structure
    39.
    发明申请
    TMR device with novel free layer structure 有权
    TMR器件具有新颖的自由层结构

    公开(公告)号:US20120038012A1

    公开(公告)日:2012-02-16

    申请号:US13317485

    申请日:2011-10-19

    IPC分类号: H01L29/82

    摘要: A composite free layer having a FL1/insertion/FL2 configuration is disclosed for achieving high dR/R, low RA, and low λ in TMR or GMR sensors. Ferromagnetic FL1 and FL2 layers have (+) λ and (−) λ values, respectively. FL1 may be CoFe, CoFeB, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, or Nb. FL2 may be CoFe, NiFe, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, Nb, or B. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Cr, or B. In a TMR stack with a MgO tunnel barrier, dR/R>60%, λ˜1+10−6, and RA=1.2 ohm-um2 when FL1 is CoFe/CoFeB/CoFe, FL2 is CoFe/NiFe/CoFe, and the insertion layer is CoTa or CoFeBTa.

    摘要翻译: 公开了具有FL1 /插入/ FL2配置的复合自由层,用于在TMR或GMR传感器中实现高dR / R,低RA和低λ。 铁磁FL1和FL2层分别具有(+)λ和( - )λ值。 FL1可以是CoFe,CoFeB或其与Ni,Ta,Mn,Ti,W,Zr,Hf,Tb或Nb的合金。 FL2可以是CoFe,NiFe或其与Ni,Ta,Mn,Ti,W,Zr,Hf,Tb,Nb或B的合金。薄插入层包括至少一种诸如Co,Fe和Ni 以及选自Ta,Ti,W,Zr,Hf,Nb,Mo,V,Cr或B中的至少一种非磁性元素。在具有MgO隧道势垒的TMR堆叠中,dR / R> 60%,λ 〜1 + 10-6,当FL1为CoFe / CoFeB / CoFe时,RA = 1.2ohm-um2,FL2为CoFe / NiFe / CoFe,插入层为CoTa或CoFeBTa。