Liquid crystal grating coupling
    31.
    发明申请
    Liquid crystal grating coupling 审中-公开
    液晶光栅耦合

    公开(公告)号:US20060018597A1

    公开(公告)日:2006-01-26

    申请号:US11187725

    申请日:2005-07-22

    IPC分类号: G02B6/26

    摘要: A tunable optical coupling arrangement for use with a relatively thin (generally sub-micron thickness) silicon waveguiding layer of a silicon-on-insulator (SOI) substrate. The arrangement comprises a multi-layer structure including a substrate for supporting one or more diffractive optical elements and a layer of tunable liquid crystal material. The multi-layer structure is disposed over a conventional SOI substrate including the thin silicon waveguiding layer, where the refractive index of the liquid crystal material can be modified to adjust the deflection of an input optical beam through the various diffractive optical elements and present an optimized launch angle into the silicon waveguiding layer, thus reducing insertion loss at the waveguiding layer.

    摘要翻译: 一种可调光耦合装置,用于与绝缘体上硅(SOI)衬底的较薄(通常为亚微米厚度)的硅波导层一起使用。 该装置包括多层结构,其包括用于支撑一个或多个衍射光学元件的基板和可调谐液晶材料层。 多层结构设置在包括薄硅波导层的常规SOI衬底上,其中可以修改液晶材料的折射率以调节通过各种衍射光学元件的输入光束的偏转,并且呈现优化的 发射角进入硅波导层,从而减小波导层的插入损耗。

    Vertical stacking of multiple integrated circuits including SOI-based optical components
    32.
    发明申请
    Vertical stacking of multiple integrated circuits including SOI-based optical components 审中-公开
    包括基于SOI的光学元件的多个集成电路的垂直堆叠

    公开(公告)号:US20060177173A1

    公开(公告)日:2006-08-10

    申请号:US11346718

    申请日:2006-02-03

    摘要: A vertical stack of integrated circuits includes at least one CMOS electronic integrated circuit (IC), an SOI-based opto-electronic integrated circuit structure, and an optical input/output coupling element. A plurality of metalized vias may be formed through the thickness of the stack so that electrical connections can be made between each integrated circuit. Various types of optical input/output coupling can be used, such as prism coupling, gratings, inverse tapers, and the like. By separating the optical and electrical functions onto separate ICs, the functionalities of each may be modified without requiring a re-design of the remaining system. By virtue of using SOI-based opto-electronics with the CMOS electronic ICs, a portion of the SOI structure may be exposed to provide access to the waveguiding SOI layer for optical coupling purposes.

    摘要翻译: 集成电路的垂直堆叠包括至少一个CMOS电子集成电路(IC),基于SOI的光电集成电路结构以及光输入/输出耦合元件。 可以通过堆叠的厚度形成多个金属化通孔,使得可以在每个集成电路之间进行电连接。 可以使用各种类型的光输入/输出耦合,例如棱镜耦合,光栅,逆锥等。 通过将光学和电气功能分离到单独的IC上,可以修改每个功能,而不需要重新设计剩余的系统。 通过使用具有CMOS电子IC的基于SOI的光电子器件,SOI结构的一部分可能被暴露以提供对波导SOI层的访问以用于光学耦合目的。

    External cavity laser in thin SOI with monolithic electronics
    33.
    发明申请
    External cavity laser in thin SOI with monolithic electronics 审中-公开
    具有单片电子器件的薄SOI中的外腔激光器

    公开(公告)号:US20070280326A1

    公开(公告)日:2007-12-06

    申请号:US11637979

    申请日:2006-12-13

    IPC分类号: H01S3/10 H01S3/08

    摘要: An ECL laser structure utilizes an SOI-based grating structure coupled to the external gain medium to provide lasing activity. In contrast to conventional Bragg grating structures, the grating utilized in the ECL of the present invention is laterally displaced (i.e., offset) from the waveguide (in most cases, a rib or strip waveguide) comprising the laser cavity. The grating is formed in an area with higher contrast ratio between materials (silicon and oxide) and thus requires a lesser amount of optical energy to reflect the selected wavelength, and can easily be formed using well-known CMOS fabrication processes. The pitch of the grating (i.e., the spacing between adjacent grating elements) and the refractive index values of the grating materials determine the reflected wavelength (also referred to as the “center wavelength”). A thermally conductive strip is disposed alongside the grating to adjust/tune the center wavelength of the grating, where the application of an electric current to the thermally conductive strip will heat the strip and transfer this heat to the grating. The change of temperature of the grating will modify the refractive indexes of the grating materials and as a result change its center wavelength.

    摘要翻译: ECL激光器结构利用耦合到外部增益介质的基于SOI的光栅结构来提供激光活动。 与传统的布拉格光栅结构相比,在本发明的ECL中使用的光栅从包括激光腔的波导(大多数情况下是肋或条形波导)横向移位(即偏移)。 光栅形成在材料(硅和氧化物)之间具有较高对比度的区域中,因此需要较少量的光能来反射所选择的波长,并且可以使用公知的CMOS制造工艺容易地形成。 光栅的间距(即相邻光栅元件之间的间距)和光栅材料的折射率值决定了反射波长(也称为“中心波长”)。 导热条沿光栅旁边设置以调整/调整光栅的中心波长,其中向导热带施加电流将加热带并将该热传递到光栅。 光栅的温度变化会改变光栅材料的折射率,从而改变其中心波长。

    Dual-lensed unitary optical receiver assembly
    34.
    发明授权
    Dual-lensed unitary optical receiver assembly 有权
    双透镜单一光接收机组件

    公开(公告)号:US07556440B2

    公开(公告)日:2009-07-07

    申请号:US12004241

    申请日:2007-12-20

    摘要: A unitary optical receiver assembly is formed to include a V-groove passively aligned with a first aspheric lens (the lens formed along a surface perpendicular to the V-groove). An optical fiber is disposed along the V-groove and is used to bring the received optical signal into the unitary assembly. Upon passing through the first aspheric lens, the received optical signal will intercept a 45° turning mirror wall that directs the signal downward, through a second aspheric lens (also molded in the unitary assembly), and then into a photosensitive device. Advantageously, the photosensitive device is disposed in passive alignment with the second aspheric lens, allowing for a received signal to be coupled from an incoming optical fiber to a photosensitive device without needing any type of active alignment therebetween.

    摘要翻译: 单一光接收器组件形成为包括与第一非球面透镜(沿垂直于V形槽的表面形成的透镜)无源对准的V形沟槽。 光纤沿V形槽设置,用于将接收到的光信号送入整体式组件。 在通过第一非球面透镜时,接收到的光信号将截取通过第二非球面透镜(也在单一组件中模制)然后进入感光装置的向下引导信号的45°转向镜面壁。 有利地,感光装置设置成与第二非球面透镜无源对准,允许接收的信号从入射光纤耦合到感光装置,而不需要其间的任何类型的有源对准。

    Dual-lensed unitary optical receiver assembly
    35.
    发明申请
    Dual-lensed unitary optical receiver assembly 有权
    双透镜单一光接收机组件

    公开(公告)号:US20080166136A1

    公开(公告)日:2008-07-10

    申请号:US12004241

    申请日:2007-12-20

    IPC分类号: H04B10/06

    摘要: A unitary optical receiver assembly is formed to include a V-groove passively aligned with a first aspheric lens (the lens formed along a surface perpendicular to the V-groove). An optical fiber is disposed along the V-groove and is used to bring the received optical signal into the unitary assembly. Upon passing through the first aspheric lens, the received optical signal will intercept a 45° turning mirror wall that directs the signal downward, through a second aspheric lens (also molded in the unitary assembly), and then into a photosensitive device. Advantageously, the photosensitive device is disposed in passive alignment with the second aspheric lens, allowing for a received signal to be coupled from an incoming optical fiber to a photosensitive device without needing any type of active alignment therebetween.

    摘要翻译: 单一光接收器组件形成为包括与第一非球面透镜(沿垂直于V形槽的表面形成的透镜)无源对准的V形沟槽。 光纤沿V形槽设置,用于将接收到的光信号送入整体式组件。 在通过第一非球面透镜时,接收到的光信号将截取通过第二非球面透镜(也在单一组件中模制)然后进入感光装置的向下引导信号的45°转向镜面壁。 有利地,感光装置设置成与第二非球面透镜无源对准,允许接收的信号从入射光纤耦合到感光装置,而不需要其间的任何类型的有源对准。

    Silicon-based electro-optic phase modulator with reduced residual amplitude modulation
    39.
    发明授权
    Silicon-based electro-optic phase modulator with reduced residual amplitude modulation 有权
    具有降低的残余幅度调制的硅基电光相位调制器

    公开(公告)号:US07167293B2

    公开(公告)日:2007-01-23

    申请号:US11342098

    申请日:2006-01-27

    申请人: David Piede

    发明人: David Piede

    IPC分类号: G02F1/03 G02F1/01 G02F1/035

    摘要: An arrangement for removing unwanted amplitude modulation from the output of an electro-optic phase modulator (formed within a silicon-on-insulator (SOI) system) includes resonant filters that are biased on the positive and negative slopes of the response signal. Therefore, as the amplitude response of one filter decreases, the amplitude response of the other filter increases, resulting in balancing the output and essentially eliminating amplitude modulation from the phase-modulated output signal. In one embodiment, ring resonators (formed in the SOI layer) are used to provide the filtering, where as the number of resonators is increased, the performance of the filtering arrangement is improved accordingly.

    摘要翻译: 用于从电光相位调制器(形成在绝缘体上硅(SOI))系统的输出中去除不想要的幅度调制的装置包括偏置在响应信号的正和负斜率上的谐振滤波器。 因此,随着一个滤波器的振幅响应减小,另一个滤波器的振幅响应增加,从而平衡输出并且基本上消除来自相位调制输出信号的振幅调制。 在一个实施例中,环形谐振器(在SOI层中形成)用于提供滤波,其中当谐振器的数量增加时,相应地改善滤波装置的性能。