公开(公告)号：US06653165B2

公开(公告)日：2003-11-25

申请号：US10058322

申请日：2002-01-30

申请人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Koichi Matsuda ,  Yuzo Koda ,  Tadashi Hori

发明人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Koichi Matsuda ,  Yuzo Koda ,  Tadashi Hori

IPC分类号： H01L2100

CPC分类号： H01L31/202 ,  H01L31/056 ,  H01L31/076 ,  H01L31/1884 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： For efficiently forming a semiconductor element with excellent adhesion and environment resistance, a semiconductor element forming method is configured to have a step of forming a plurality of pin junctions of a silicon-based material on a substrate by a high-frequency plasma CVD process under a pressure of not more than atmospheric pressure, and the method further has a step of forming a p-layer, an i-layer, and a portion of an n-layer of a first pin junction of the pin junctions or forming an n-layer, an i-layer, and a portion of a p-layer of a first pin junction of the pin junctions, and thereafter exposing the p-layer or the n-layer exposed in the surface, to an oxygen-containing atmosphere; a step of forming on the p-layer or the n-layer as exposed to the oxygen-containing atmosphere a layer of the same conductivity type as that of the p-layer or the n-layer; and a step of forming an n-layer or a p-layer of a second pin junction adjacent to the first pin junction to form a pn interface.

公开(公告)号：US4869075A

公开(公告)日：1989-09-26

申请号：US268972

申请日：1988-11-09

申请人： Yoshiki Ikari ,  Tadashi Hori ,  Fujio Suzuki ,  Shyozi Tsunekawa ,  Wazoh Yamada ,  Hideo Maeda

发明人： Yoshiki Ikari ,  Tadashi Hori ,  Fujio Suzuki ,  Shyozi Tsunekawa ,  Wazoh Yamada ,  Hideo Maeda

IPC分类号： F24F1/02 ,  F24F13/22

CPC分类号： F24F13/224 ,  F24F1/027

摘要： An air conditioner comprises a water distributor having an opening on its bottom plate, dams around the opening and inverted U-shaped members with a small space formed between the inverted U-shaped plates and the dams so that water in the distributor is guided by a capillary action and distributed to an indoor heat exchanger. A reservoir is disposed to a pipe system between a pump and the indoor heat exchanger so that drain water in the outdoor drain pan is directed to the indoor heat exchanger through the reservoir. The reservoir has a tube which permits excessive water to spill over an opening of the tube to return to the outdoor drain pan through a returning conduit pipe.

摘要翻译： 空调器包括在其底板上具有开口的水分配器，围绕开口和倒置的U形构件阻塞，在倒U形板和坝之间形成有小的空间，使得分配器中的水由一个 毛细管作用并分配到室内热交换器。 在泵和室内热交换器之间的管道系统上设置有储存器，使得室外排水盘中的排水通过储存器被引导到室内热交换器。 储存器具有管，其允许过量的水溢出管的开口，以通过返回管道返回到室外排水盘。

公开(公告)号：US6159300A

公开(公告)日：2000-12-12

申请号：US990915

申请日：1997-12-15

申请人： Tadashi Hori ,  Shotaro Okabe ,  Akira Sakai ,  Yuzo Kohda ,  Takahiro Yajima

发明人： Tadashi Hori ,  Shotaro Okabe ,  Akira Sakai ,  Yuzo Kohda ,  Takahiro Yajima

IPC分类号： C23C14/56 ,  C23C16/54 ,  H01L21/205 ,  H01L31/075 ,  H01L31/20 ,  C23C16/00

CPC分类号： C23C16/545 ,  C23C14/562 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S438/907

摘要： An apparatus for forming a non-single-crystal semiconductor thin film comprising a film deposition chamber having a film-forming space surrounded by a film deposition chamber wall and a beltlike substrate, and an external chamber surrounding the deposition chamber wall is provided. While the beltlike substrate is moved in a longitudinal direction, a film-forming gas is introduced through a gas supply device into the film-forming space and microwave energy is radiated from a microwave applicator into the film-forming space to induce a microwave plasma, and thereby form a non-single-crystal semiconductor thin film on a surface of the beltlike substrate. A cooling mechanism and a temperature-increasing mechanism are provided to cover a part of an outside surface of the deposition chamber wall. An apparatus for forming a non-single-crystal semiconductor thin film where the gas supply device comprises a gas manifold set apart from the deposition chamber wall is another embodiment.

摘要翻译： 提供了一种用于形成非单晶半导体薄膜的装置，其包括具有由成膜室壁和带状基板包围的成膜空间的成膜室和围绕沉积室壁的外部室。 当带状基板沿长度方向移动时，成膜气体通过气体供给装置引入成膜空间，并且微波能量从微波施加器辐射到成膜空间中以诱导微波等离子体， 从而在带状基板的表面上形成非单晶半导体薄膜。 提供冷却机构和升温机构以覆盖沉积室壁的外表面的一部分。 形成非单晶半导体薄膜的装置是另一实施例，其中气体供应装置包括与沉积室壁分开的气体歧管。

公开(公告)号：US4669534A

公开(公告)日：1987-06-02

申请号：US880314

申请日：1986-06-30

申请人： Hideo Maeda ,  Tadashi Hori ,  Tatsuya Tani

发明人： Hideo Maeda ,  Tadashi Hori ,  Tatsuya Tani

IPC分类号： F24F1/02 ,  F24F7/00

CPC分类号： F24F1/027

摘要： A room air conditioner of a window mounted unit type having an air inlet grill and an air outlet grill on a front panel of the air conditioner. The air conditioner has a blower, a heat exchanger and an air passage directing an air flow from the blower to the heat exchanger, and an air guide arrangement in the air passage. The air guide arrangement guides the air flow from the blower to the heat exchanger in a uniform manner to minimize deviation of air flow distribution in the air passage to the heat exchanger.

摘要翻译： 一种具有空气入口格栅的窗户安装单元的房间空调和在空调的前面板上的空气出口格栅。 空气调节器具有鼓风机，热交换器和将吹风机的空气流引导到热交换器的空气通道，以及空气通道中的空气引导装置。 空气引导装置以均匀的方式将来自鼓风机的空气流引导到热交换器，以最小化到通向热交换器的空气通道中的气流分布的偏差。

公开(公告)号：US20090266704A1

公开(公告)日：2009-10-29

申请号：US12428515

申请日：2009-04-23

申请人： Tadashi Hori

发明人： Tadashi Hori

IPC分类号： C23C14/34

CPC分类号： C23C14/562 ,  C23C14/086 ,  C23C14/3464

摘要： A sputtering method comprising the steps of: arranging the plurality of targets in a vacuum container equidistantly in a transport direction of the substrate such that distances between the plurality of rectangular targets and the substrate are different; and assuming that lengths of sides, parallel to the transport direction, of adjacent first and second targets are expressed as first and second target width W1 and W2, respectively, and that a gap between the first and second targets is expressed as L, when a relationship among the first target width W1, the second target width W2, and the gap L satisfies L≦3(W1+W2), and assuming that a distance from each of the plurality of targets to the substrate is expressed as T, performing sputtering such that a relationship between a longest distance Tmax and the gap L at this time satisfies 0.4≦Tmax/L≦0.8.

摘要翻译： 一种溅射方法，包括以下步骤：将多个靶在等离子体的真空容器中沿衬底的输送方向布置，使得多个矩形靶和衬底之间的距离不同; 并且假设相邻的第一和第二目标的平行于传输方向的边的长度分别表示为第一和第二目标宽度W1和W2，并且第一和第二目标之间的间隙表示为L，当a 第一目标宽度W1，第二目标宽度W2和间隙L之间的关系满足L <= 3（W1 + W2），并且假设从多个目标到基板的每一个的距离被表示为T， 溅射使得此时的最长距离Tmax与间隙L之间的关系满足0.4≤Tmax/L≤0.8。

公开(公告)号：US06399411B1

公开(公告)日：2002-06-04

申请号：US09594563

申请日：2000-06-15

申请人： Tadashi Hori ,  Shotaro Okabe ,  Akira Sakai ,  Yuzo Kohda ,  Takahiro Yajima

发明人： Tadashi Hori ,  Shotaro Okabe ,  Akira Sakai ,  Yuzo Kohda ,  Takahiro Yajima

IPC分类号： H01L2100

CPC分类号： C23C16/545 ,  C23C14/562 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S438/907

摘要： A method for forming a non-single-crystal semiconductor thin film and a photovoltaic device using an apparatus, which has a film deposition chamber with a film-forming space surrounded by a film deposition chamber wall and a belt-like substrate. An external chamber surrounding the deposition chamber wall is provided in the apparatus. While the belt-like substrate is moved in a longitudinal direction, a film-forming gas is introduced through a gas supply device into the film-forming space and microwave energy is radiated from a microwave applicator into the film-forming space to induce a microwave plasma, and thereby form a non-single-crystal semiconductor thin film on a surface of the belt-like substrate. A cooling mechanism and a temperature-increasing mechanism covering a part of an outside surface of the deposition chamber wall provide temperature control.

摘要翻译： 一种用于形成非单晶半导体薄膜的方法和使用具有由成膜室壁和带状衬底围成的成膜空间的成膜室的装置的光电器件。 在该装置中设置有围绕沉积室壁的外部室。 当带状基板沿纵向移动时，成膜气体通过气体供给装置引入成膜空间，并且微波能量从微波施加器辐射到成膜空间中以引起微波 等离子体，从而在带状基板的表面上形成非单晶半导体薄膜。 覆盖沉积室壁的外表面的一部分的冷却机构和升温机构提供温度控制。