公开(公告)号：US06653165B2

公开(公告)日：2003-11-25

申请号：US10058322

申请日：2002-01-30

申请人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Koichi Matsuda ,  Yuzo Koda ,  Tadashi Hori

发明人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Koichi Matsuda ,  Yuzo Koda ,  Tadashi Hori

IPC分类号： H01L2100

CPC分类号： H01L31/202 ,  H01L31/056 ,  H01L31/076 ,  H01L31/1884 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： For efficiently forming a semiconductor element with excellent adhesion and environment resistance, a semiconductor element forming method is configured to have a step of forming a plurality of pin junctions of a silicon-based material on a substrate by a high-frequency plasma CVD process under a pressure of not more than atmospheric pressure, and the method further has a step of forming a p-layer, an i-layer, and a portion of an n-layer of a first pin junction of the pin junctions or forming an n-layer, an i-layer, and a portion of a p-layer of a first pin junction of the pin junctions, and thereafter exposing the p-layer or the n-layer exposed in the surface, to an oxygen-containing atmosphere; a step of forming on the p-layer or the n-layer as exposed to the oxygen-containing atmosphere a layer of the same conductivity type as that of the p-layer or the n-layer; and a step of forming an n-layer or a p-layer of a second pin junction adjacent to the first pin junction to form a pn interface.

公开(公告)号：US06812499B2

公开(公告)日：2004-11-02

申请号：US09982845

申请日：2001-10-22

申请人： Takaharu Kondo ,  Makoto Higashikawa ,  Masafumi Sano ,  Koichi Matsuda

发明人： Takaharu Kondo ,  Makoto Higashikawa ,  Masafumi Sano ,  Koichi Matsuda

IPC分类号： H01L3300

CPC分类号： H01L31/075 ,  H01L31/03682 ,  H01L31/03767 ,  H01L31/076 ,  H01L31/1804 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A silicon based film is provided which comprises a crystal phase formed on a substrate with a surface shape represented by a function f, wherein the silicon-based film is formed on a substrate with a surface shape having a standard deviation of an inclination arctan (df/dx) from 15° to 55° within the range of a sampling length dx from 20 nm to 100 nm. Raman scattering strength resulting from an amorphous component in the silicon-based film is not more than a Raman scattering strength resulting from a crystalline component. A difference between a spacing in a direction parallel to a principal surface of the substrate and a spacing of a single crystal silicon is within the range of 0.2% to 1.0% with regard to the spacing of the single crystal silicon.

摘要翻译： 提供了一种硅基膜，其包括形成在具有由功能f表示的表面形状的基板上的晶相，其中所述硅基膜形成在具有倾斜度的标准偏差（df）的表面形状的基板上 / dx）在20nm至100nm的采样长度dx的范围内从15°至55°。 由硅基膜中的无定形成分产生的拉曼散射强度不大于由结晶成分产生的拉曼散射强度。 相对于单晶硅的间隔，平行于基板的主面的方向的间隔和单晶硅的间隔之间的差在0.2％〜1.0％的范围内。

公开(公告)号：US06706336B2

公开(公告)日：2004-03-16

申请号：US10055974

申请日：2002-01-28

申请人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

发明人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

IPC分类号： C23C1624

CPC分类号： H01J37/32467 ,  C23C16/24 ,  C23C16/4404 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521

摘要： A silicon-based film of excellent photoelectric characteristics can be obtained by introducing a source gas containing silicon halide and hydrogen into the interior of a vacuum vessel, at least a part of the interior being covered with a silicon-containing solid, generating plasma in the space of the interior of the vacuum vessel, and forming a silicon-based film on a substrate provided in the interior of the vacuum vessel.

摘要翻译： 通过将含有卤化硅和氢气的源气体引入真空容器的内部可以获得优异的光电特性的硅基膜，至少一部分内部被含硅固体覆盖，在 真空容器内部的空间，并且在设置在真空容器内部的基板上形成硅基膜。

公开(公告)号：US06803080B2

公开(公告)日：2004-10-12

申请号：US10231308

申请日：2002-08-30

申请人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

发明人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

IPC分类号： H05H102

CPC分类号： C23C16/24 ,  C23C16/5096 ,  C23C16/545 ,  C30B25/105 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0376 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： A film, typically a silicon-based film, is formed on a substrate by means of a plasma CVD process using a high frequency wave in a condition where a resistance element made of a different material than that of the substrate is provided on the electric path between the substrate and the earth. The resultant film shows a high quality and an improved adhesion strength while it can be formed at a practically high rate.

摘要翻译： 通过使用高频波的等离子体CVD工艺在基板上形成膜，通常为硅基膜，在电路上设置由与基板不同的材料制成的电阻元件 在基底和地球之间。 所得到的膜可以以实际高的速率形成，并且显示出高质量和改善的粘合强度。

公开(公告)号：US06472248B2

公开(公告)日：2002-10-29

申请号：US09758345

申请日：2001-01-12

申请人： Atsushi Shiozaki ,  Masafumi Sano ,  Toshimitsu Kariya ,  Takaharu Kondo ,  Makoto Higashikawa ,  Koichi Matsuda

发明人： Atsushi Shiozaki ,  Masafumi Sano ,  Toshimitsu Kariya ,  Takaharu Kondo ,  Makoto Higashikawa ,  Koichi Matsuda

IPC分类号： H01L2100

CPC分类号： H01L31/03685 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02675 ,  H01L31/028 ,  H01L31/03926 ,  H01L31/048 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/1872 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic element having a stacked structure comprising a first semiconductor layer containing no crystalline phase, a second semiconductor layer containing approximately spherical microcrystalline phases, and a third semiconductor layer containing pillar microcrystalline phases which are stacked in this order, wherein said spherical microcrystalline phases of said second semiconductor layer on the side of said third semiconductor layer have an average size which is greater than that of said spherical microcrystalline phases of said second semiconductor layer on the side of said first semiconductor layer.

摘要翻译： 一种具有叠层结构的光电元件，包括不含结晶相的第一半导体层，含有近似球形微晶相的第二半导体层，以及包含柱状微晶相的第三半导体层，该第三半导体层依次层叠，其中所述 所述第三半导体层侧的第二半导体层的平均尺寸大于所述第二半导体层在所述第一半导体层一侧的所述球形微晶相的平均尺寸。

公开(公告)号：US20050034665A1

公开(公告)日：2005-02-17

申请号：US10948342

申请日：2004-09-24

申请人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

发明人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

IPC分类号： C23C16/24 ,  C23C16/509 ,  C23C16/54 ,  C30B25/10 ,  H01L21/205 ,  H01L31/0376 ,  H01L31/04 ,  H01L31/18 ,  C23C16/00

CPC分类号： C23C16/24 ,  C23C16/5096 ,  C23C16/545 ,  C30B25/105 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0376 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： A film, typically a silicon-based film, is formed on a substrate by means of a plasma CVD process using a high frequency wave in a condition where a resistance element made of a different material than that of the substrate is provided on the electric path between the substrate and the earth. The resultant film shows a high quality and an improved adhesion strength while it can be formed at a practically high rate.

摘要翻译： 通过使用高频波的等离子体CVD工艺在基板上形成膜，通常为硅基膜，在电路上设置由与基板不同的材料制成的电阻元件 在基底和地球之间。 所得到的膜可以以实际高的速率形成，并且显示出高质量和改善的粘合强度。

公开(公告)号：US06897559B2

公开(公告)日：2005-05-24

申请号：US10455300

申请日：2003-06-06

申请人： Takaharu Kondo ,  Akira Sakai ,  Koichi Matsuda

发明人： Takaharu Kondo ,  Akira Sakai ,  Koichi Matsuda

IPC分类号： C23C16/509 ,  H01L21/205 ,  H01L31/04 ,  H01L31/20 ,  H01L23/34

CPC分类号： H01L31/206 ,  C23C16/509 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/202 ,  H01L2924/0002 ,  Y02E10/50 ,  Y02P70/521 ,  H01L2924/00

摘要： There is provided an apparatus for forming a plurality of silicon-based thin films on a substrate using a plurality of deposited film forming vessels that can form silicon-based thin films of higher quality and excellent uniformity by applying a high frequency power of a first frequency selected from the range between 30 MHz and 500 MHz to a power-applying electrode in a deposited film forming vessel wherein the distance between the power-supplying electrode and the substrate is 10 mm±5 mm, and by supplying a high frequency power of a second frequency selected from the range between 10 MHz and 30 MHz to a power-supplying electrode in a deposited film forming vessel wherein the distance between the power-supplying electrode and the substrate is 20 mm±5 mm.

摘要翻译： 提供了一种使用多个沉积膜形成容器在基板上形成多个硅基薄膜的装置，该沉积膜形成容器可以通过施加第一频率的高频功率而形成更高质量和优异的均匀性的硅基薄膜 从在30MHz和500MHz之间的范围内选择到沉积成膜容器中的功率施加电极，其中供电电极和衬底之间的距离为10mm±5mm，并且通过提供高频功率的 从10MHz到30MHz范围内的第二频率到沉积成膜容器中的供电电极，其中供电电极和基板之间的距离为20mm±5mm。

公开(公告)号：US5439533A

公开(公告)日：1995-08-08

申请号：US337195

申请日：1994-11-07

申请人： Keishi Saito ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Yuzo Koda ,  Naoto Okada

发明人： Keishi Saito ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Yuzo Koda ,  Naoto Okada

IPC分类号： H01L31/04 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/076 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/03921 ,  H01L31/075 ,  H01L31/076 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S136/293

摘要： An object of the present invention is to provide a photovoltaic device and a method of producing the photovoltaic device which can prevent recombination of photo-excited carriers and which permits increases in the open circuit voltage and the carrier range. The photovoltaic device of the present invention has a laminate structure composed of at least a p-type layer of a silicon non-single crystal semiconductor, a photoactive layer having a plurality of i-type layers, and an n-type layer. The photoactive layer has a laminate structure composed of a first i-type layer deposited on the side of the n-type layer by a microwave plasma CVD process, and a second i-type layer deposited on the side of said the p-type layer by an RF plasma CVD process. The first i-type layer deposited by the microwave plasma CVD process contains at least silicon and carbon atoms, and has a minimum band gap between the center thereof and the p-type layer, and the second i-type layer deposited by the RF plasma CVD process contains at least silicon atoms and has a thickness of 30 nm or less.

摘要翻译： 本发明的目的是提供一种能够防止光激发载流子复合并且允许开路电压和载流子范围增加的光电器件及其制造方法。 本发明的光电器件具有至少由非硅单晶半导体的p型层，具有多个i型层的光活性层和n型层构成的层叠结构。 光敏层具有由微波等离子体CVD工艺在n型层侧沉积的第一i型层和沉积在所述p型层侧的第二i型层构成的层叠结构 通过RF等离子体CVD工艺。 通过微波等离子体CVD法沉积的第一i型层至少包含硅和碳原子，并且在其中心和p型层之间具有最小的带隙，并且由RF等离子体沉积的第二i型层 CVD工艺至少含有硅原子，其厚度为30nm以下。

公开(公告)号：US06706335B2

公开(公告)日：2004-03-16

申请号：US09865549

申请日：2001-05-29

申请人： Takaharu Kondo ,  Koichi Matsuda ,  Makoto Higashikawa

发明人： Takaharu Kondo ,  Koichi Matsuda ,  Makoto Higashikawa

IPC分类号： H05H102

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/509 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/03767 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： In a high frequency plasma CVD using a source gas comprising a silicon halide and hydrogen, the value of Q defined by Q=Po×PR/S/d is controlled so as to be 50 or more, wherein Po (W) is a supplied power, S (cm2) is the area of a high frequency introducing electrode, d (cm) is a distance between the high frequency introducing electrode and a substrate, and PR (mTorr) is a pressure. Thereby, a method of forming a silicon thin film, a silicon thin film and a photovoltaic element excellent in photoelectric characteristics are provided which attain a film forming rate of an industrially practical level.

摘要翻译： 在使用包含硅卤化物和氢的源气体的高频等离子体CVD中，由Q = PoxPR / S / d定义的Q值为50以上，其中Po（W）为供电电力， S（cm 2）是高频引入电极的面积，d（cm）是高频引入电极和衬底之间的距离，PR（mTorr）是压力。 因此，提供了一种形成硅薄膜，硅薄膜和光电特性优异的光电元件的方法，其获得了工业实用水平的成膜速率。

公开(公告)号：US5571749A

公开(公告)日：1996-11-05

申请号：US365244

申请日：1994-12-28

申请人： Koichi Matsuda ,  Takaharu Kondo ,  Yusuke Miyamoto

发明人： Koichi Matsuda ,  Takaharu Kondo ,  Yusuke Miyamoto

IPC分类号： G02F1/1343 ,  C23C16/46 ,  C23C16/50 ,  C23C16/54 ,  H01L21/205 ,  H01L21/26 ,  H01L21/31 ,  H01L31/04 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/076 ,  C23C16/46 ,  C23C16/463 ,  C23C16/50 ,  C23C16/545 ,  H01L21/02425 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A plasma CVD method adapted to a roll-to-roll process or the like wherein the change rate of the temperature of the substrate before and after an i-type semiconductor layer is deposited is made rapid so as to prevent diffusion of impurities occurring due to annealing, by constituting the apparatus structure in such a manner that the deposited film is formed on an elongated substrate by the plasma CVD method while heating the elongated substrate moving in an i-layer forming discharge chamber at a rate of 4.degree. C./second or higher immediately in front of an inlet to the discharge chamber and cooling the same at a rate of 4.degree. C./second or higher immediately at the outlet of the discharge chamber so that a stacked-layer type photovoltaic device having a large area and free from scattering of the characteristics is continuously formed without deterioration of the characteristics occurring due to dopant diffusion.

摘要翻译： 一种适用于卷绕过程等的等离子体CVD方法，其中沉积i型半导体层之前和之后的衬底的温度变化率被快速地制成，以便防止由于 通过以等离子体CVD法在细长基板上形成沉积膜，同时以4℃/秒的速率加热在i层形成放电室中移动的细长基板，从而进行退火 立即在排出室的入口的前面立即升高，并在出口处立即以4℃/秒或更高的速率对其进行冷却，从而形成具有大面积的堆叠层型光电器件 连续地形成没有特征散射，而不会由于掺杂剂扩散而发生特性的恶化。