公开(公告)号：US08363462B2

公开(公告)日：2013-01-29

申请号：US13233906

申请日：2011-09-15

申请人： Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/15

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms

摘要翻译： 通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层 并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层 。 自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。

公开(公告)号：US07663197B2

公开(公告)日：2010-02-16

申请号：US11534440

申请日：2006-09-22

申请人： Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： H01L43/08

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≧Ms

摘要翻译： 通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层 并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层 。 自由层的饱和磁化强度Ms满足关系0> = Mst是自由层的厚度，A是常数。

公开(公告)号：US08036025B2

公开(公告)日：2011-10-11

申请号：US12686168

申请日：2010-01-12

申请人： Toshihiko Nagase ,  Masatoshi Yoshkawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko Nagase ,  Masatoshi Yoshkawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： H01L43/00

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms

摘要翻译： 通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层 并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层 。 自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。

公开(公告)号：US20090080239A1

公开(公告)日：2009-03-26

申请号：US12233121

申请日：2008-09-18

申请人： Toshihiko Nagase ,  Katsuya Nishiyama ,  Tadashi Kai ,  Masahiko Nakayama ,  Makoto Nagamine ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko Nagase ,  Katsuya Nishiyama ,  Tadashi Kai ,  Masahiko Nakayama ,  Makoto Nagamine ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/02 ,  G11B5/706 ,  G11C11/14

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  Y10S977/935

摘要： A magnetoresistive element includes a first reference layer having magnetic anisotropy perpendicular to a film surface, and an invariable magnetization, a recording layer having a stacked structure formed by alternately stacking magnetic layers and nonmagnetic layers, magnetic anisotropy perpendicular to a film surface, and a variable magnetization, and an intermediate layer provided between the first reference layer and the recording layer, and containing a nonmagnetic material. The magnetic layers include a first magnetic layer being in contact with the intermediate layer and a second magnetic layer being not in contact with the intermediate layer. The first magnetic layer contains an alloy containing cobalt (Co) and iron (Fe), and has a film thickness larger than that of the second magnetic layer.

摘要翻译： 磁阻元件包括具有垂直于膜表面的磁各向异性的第一参考层和不变磁化，具有通过交替堆叠磁性层和非磁性层而形成的堆叠结构的记录层，垂直于膜表面的磁各向异性，以及可变的 磁化，以及设置在第一参考层和记录层之间并包含非磁性材料的中间层。 磁性层包括与中间层接触的第一磁性层和不与中间层接触的第二磁性层。 第一磁性层含有含有钴（Co）和铁（Fe）的合金，其膜厚大于第二磁性层的厚度。

公开(公告)号：US07190613B2

公开(公告)日：2007-03-13

申请号：US10862617

申请日：2004-06-08

申请人： Toshihiko Nagase ,  Hiroaki Yoda ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Tomomasa Ueda

发明人： Toshihiko Nagase ,  Hiroaki Yoda ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Tomomasa Ueda

IPC分类号： G11C11/14

CPC分类号： G11C11/16

摘要： An MTJ element has two magnetic layers and a nonmagnetic layer. The resistance of the MTJ element, which varies depending on whether the two magnetic layers are magnetized parallel or antiparallel. In an MRAM adapted to write data into the MTJ element by causing a write wiring to generate induced magnetic flux and consequently changing the direction of magnetization of the recording layer, the MTJ element is a perpendicular MTJ element in which each of the two magnetic layers is magnetized in a direction perpendicular to its plane. The write wiring is placed in a direction perpendicular to the direction of the thickness of the MTJ element and applies a generated magnetic field to the magnetic layers of the MTJ element in the direction in which they are magnetized. Magnetic yokes hold the MTJ element in the direction of its thickness.

摘要翻译： MTJ元件具有两个磁性层和一个非磁性层。 MTJ元件的电阻取决于两个磁性层是平行还是反平行磁化而变化。 在适于通过使写入布线产生感应磁通并因此改变记录层的磁化方向将数据写入MTJ元件的MRAM中，MTJ元件是垂直的MTJ元件，其中两个磁性层中的每一个是 在垂直于其平面的方向上磁化。 写入布线沿垂直于MTJ元件的厚度方向的方向放置，并将产生的磁场施加到MTJ元件的被磁化方向上的磁性层。 磁轭将MTJ元件沿其厚度方向固定。

公开(公告)号：US20050018478A1

公开(公告)日：2005-01-27

申请号：US10862617

申请日：2004-06-08

申请人： Toshihiko Nagase ,  Hiroaki Yoda ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Tomomasa Ueda

发明人： Toshihiko Nagase ,  Hiroaki Yoda ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Tomomasa Ueda

IPC分类号： G06K19/077 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

CPC分类号： G11C11/16

摘要： An MTJ element has two magnetic layers and a nonmagnetic layer. The resistance of the MTJ element, which varies depending on whether the two magnetic layers are magnetized parallel or antiparallel. In an MRAM adapted to write data into the MTJ element by causing a write wiring to generate induced magnetic flux and consequently changing the direction of magnetization of the recording layer, the MTJ element is a perpendicular MTJ element in which each of the two magnetic layers is magnetized in a direction perpendicular to its plane. The write wiring is placed in a direction perpendicular to the direction of the thickness of the MTJ element and applies a generated magnetic field to the magnetic layers of the MTJ element in the direction in which they are magnetized. Magnetic yokes hold the MTJ element in the direction of its thickness.

摘要翻译： MTJ元件具有两个磁性层和一个非磁性层。 MTJ元件的电阻取决于两个磁性层是平行还是反平行磁化而变化。 在适于通过使写入布线产生感应磁通并因此改变记录层的磁化方向将数据写入MTJ元件的MRAM中，MTJ元件是垂直的MTJ元件，其中两个磁性层中的每一个是 在垂直于其平面的方向上磁化。 写入布线沿垂直于MTJ元件的厚度方向的方向放置，并将产生的磁场施加到MTJ元件的被磁化方向上的磁性层。 磁轭将MTJ元件沿其厚度方向固定。

公开(公告)号：US08098514B2

公开(公告)日：2012-01-17

申请号：US12233121

申请日：2008-09-18

申请人： Toshihiko Nagase ,  Katsuya Nishiyama ,  Tadashi Kai ,  Masahiko Nakayama ,  Makoto Nagamine ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko Nagase ,  Katsuya Nishiyama ,  Tadashi Kai ,  Masahiko Nakayama ,  Makoto Nagamine ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  Y10S977/935

摘要： A magnetoresistive element includes a first reference layer having magnetic anisotropy perpendicular to a film surface, and an invariable magnetization, a recording layer having a stacked structure formed by alternately stacking magnetic layers and nonmagnetic layers, magnetic anisotropy perpendicular to a film surface, and a variable magnetization, and an intermediate layer provided between the first reference layer and the recording layer, and containing a nonmagnetic material. The magnetic layers include a first magnetic layer being in contact with the intermediate layer and a second magnetic layer being not in contact with the intermediate layer. The first magnetic layer contains an alloy containing cobalt (Co) and iron (Fe), and has a film thickness larger than that of the second magnetic layer.

摘要翻译： 磁阻元件包括具有垂直于膜表面的磁各向异性的第一参考层和不变磁化，具有通过交替堆叠磁性层和非磁性层而形成的堆叠结构的记录层，垂直于膜表面的磁各向异性，以及可变的 磁化，以及设置在第一参考层和记录层之间并包含非磁性材料的中间层。 磁性层包括与中间层接触的第一磁性层和不与中间层接触的第二磁性层。 第一磁性层含有含有钴（Co）和铁（Fe）的合金，其膜厚大于第二磁性层的厚度。

公开(公告)号：US20070297220A1

公开(公告)日：2007-12-27

申请号：US11626042

申请日：2007-01-23

申请人： Masatoshi YOSHIKAWA ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Masatoshi YOSHIKAWA ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  B82Y25/00 ,  H01F10/123 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/226 ,  H01L43/08

摘要： A magnetoresistive includes a first magnetic reference layer having a fixed magnetization direction, a magnetic free layer having a magnetization direction which is changeable by being supplied with spin polarized electrons, a second magnetic reference layer having a fixed magnetization direction, a first intermediate layer provided between the first magnetic reference layer and the magnetic free layer, and a second intermediate layer provided between the magnetic free layer and the second magnetic reference layer. The magnetic free layer and the first magnetic reference layer have directions of easy magnetization perpendicular or parallel to an in-plane direction. The first magnetic reference layer and the second magnetic reference layer have directions of easy magnetization perpendicular to each other.

摘要翻译： 磁阻包括具有固定磁化方向的第一磁性参考层，具有通过提供自旋极化电子而可变化的磁化方向的磁性自由层，具有固定磁化方向的第二磁性参考层，设置在第一磁性参考层之间的第一中间层 第一磁性参考层和无磁性层，以及设置在磁性自由层和第二磁性参考层之间的第二中间层。 磁性自由层和第一磁性参考层具有垂直于或平行于面内方向的容易磁化的方向。 第一磁参考层和第二磁参考层具有彼此垂直的易磁化方向。

公开(公告)号：US20080043519A1

公开(公告)日：2008-02-21

申请号：US11829408

申请日：2007-07-27

申请人： Eiji KITAGAWA ,  Masatoshi Yoshikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Eiji KITAGAWA ,  Masatoshi Yoshikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： G11C11/1693 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： An inadvertent write can be prevented when a read is performed. The duration of the write current pulse for writing information in the magnetic memory layer is longer than the duration of the read current pulse for reading the information from the magnetic memory layer.

摘要翻译： 当执行读取时，可以防止无意写入。 用于在磁存储层中写入信息的写入电流脉冲的持续时间长于用于从磁存储层读取信息的读取电流脉冲的持续时间。

公开(公告)号：US08223533B2

公开(公告)日：2012-07-17

申请号：US12556883

申请日：2009-09-10

申请人： Jyunichi Ozeki ,  Naoharu Shimomura ,  Sumio Ikegawa ,  Tadashi Kai ,  Masahiko Nakayama ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Eiji Kitagawa ,  Masatoshi Yoshikawa

发明人： Jyunichi Ozeki ,  Naoharu Shimomura ,  Sumio Ikegawa ,  Tadashi Kai ,  Masahiko Nakayama ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Eiji Kitagawa ,  Masatoshi Yoshikawa

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3277 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

摘要： A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane; a second nonmagnetic layer that is provided on the first reference layer; and a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.

摘要翻译： 磁存储器包括磁阻效应器件，包括：在垂直于其膜平面的方向上具有磁各向异性的第一铁磁层; 设置在第一铁磁层上的第一非磁性层; 设置在第一非磁性层上的第一参考层在垂直于其膜平面的方向上具有磁各向异性，具有与第一铁磁层的磁化方向反平行的磁化，并且具有1 / 5.2〜 在第一铁磁层的垂直于膜平面的方向上的膜厚度的1/15倍; 设置在第一参考层上的第二非磁性层; 并且设置在第二非磁性层上的存储层在垂直于其膜平面的方向上具有磁各向异性，并且由于使电流流向磁阻效应器而引起的由自旋极化电子变化的磁化方向。