公开(公告)号：US5670788A

公开(公告)日：1997-09-23

申请号：US823989

申请日：1992-01-22

Applicant: Michael W. Geis

Inventor： Michael W. Geis

IPC: H01J1/304 ,  H01L29/06 ,  H01L29/12

CPC classification number: H01J1/3042 ,  H01J2201/30457

Abstract: A cold cathode device is provided comprising a wide-bandgap (>5 eV) material exhibiting negative electron affinities, low trap densities, and high carrier mobilities, a junction between a first region of the wide-bandgap material having n-type conductivity and a second region of the wide-bandgap material having p-type conductivity, and a conductive contact to forward bias the junction causing electrons to be emitted near the junction into an exterior region.

Abstract translation: 提供一种冷阴极器件，其包括具有负电子亲和力，低陷阱密度和高载流子迁移率的宽带隙（> 5eV）材料，具有n型导电性的宽带隙材料的第一区域和 宽带隙材料的第二区域具有p型导电性，以及导电接触件，以正向偏置连接，使得电子在接合点附近发射到外部区域。

公开(公告)号：US5350944A

公开(公告)日：1994-09-27

申请号：US839487

申请日：1992-02-20

Applicant: Michael W. Geis ,  Daniel L. Smythe

Inventor： Michael W. Geis ,  Daniel L. Smythe

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/47 ,  H01L29/51 ,  H01L29/786 ,  H01L29/872 ,  H01L27/01 ,  H01L29/00 ,  H01L29/78

CPC classification number: H01L29/872 ,  H01L21/044 ,  H01L29/1602 ,  H01L29/47 ,  H01L29/66045 ,  H01L29/78684 ,  H01L29/51

Abstract: Electrical quality insulating films on n-type and p-type diamond substrates are provided in which an insulating film such as a silicon dioxide film is deposited onto the exposed face of a diamond substrate, such as by chemical vapor deposition. Forming a conducting layer atop the silicon dioxide allows the creation of a metal-oxide-silicon device with which semiconductor carriers can be controlled through the application of a bias voltage to the conductor surface.

Abstract translation: 提供n型和p型金刚石基片上的电气质量绝缘膜，其中诸如二氧化硅膜的绝缘膜例如通过化学气相沉积沉积到金刚石基底的暴露面上。 在二氧化硅顶部形成导电层允许产生金属氧化物 - 硅器件，通过向导体表面施加偏置电压可以控制半导体载体。

公开(公告)号：US4632723A

公开(公告)日：1986-12-30

申请号：US481096

申请日：1983-03-31

Applicant: Henry I. Smith ,  Harry A. Atwater ,  Carl V. Thompson ,  Michael W. Geis

Inventor： Henry I. Smith ,  Harry A. Atwater ,  Carl V. Thompson ,  Michael W. Geis

IPC: C30B13/34 ,  C30B13/06

CPC classification number: C30B13/34 ,  Y10S117/913 ,  Y10S117/918

Abstract: A substrate is coated with a film to be recrystallized. A pattern of crystallization barriers is created in the film, for example, by etching voids in the film. An encapsulation layer is generally applied to protect the film, fill the voids and otherwise enhance a recrystallization process. Recrystallization is carried out such that certain orientations pass preferentially through the barrier, generally as a result of growth-velocity anisotropy. The result is a film of a specific predetermined crystallographic orientation, a range of orientations or a set of discrete orientations.

Abstract translation: 将基材涂覆以重结晶的膜。 在膜中产生结晶阻挡层的图案，例如通过蚀刻膜中的空隙。 通常应用包封层以保护膜，填充空隙，否则增强再结晶过程。 进行重结晶，使得某些取向通常优先通过势垒，通常由于生长速度各向异性。 结果是具有特定的预定晶体取向，取向范围或一组离散取向的薄膜。