公开(公告)号：US20100025787A1

公开(公告)日：2010-02-04

申请号：US11541975

申请日：2006-10-02

Applicant: Michael W. Geis ,  Steven J. Spector ,  Donna M. Lennon ,  Matthew E. Grein ,  Robert T. Schulein ,  Jung U. Yoon ,  Franz Xaver Kaertner ,  Fuwan Gan ,  Theodore M. Lyszczarz

Inventor： Michael W. Geis ,  Steven J. Spector ,  Donna M. Lennon ,  Matthew E. Grein ,  Robert T. Schulein ,  Jung U. Yoon ,  Franz Xaver Kaertner ,  Fuwan Gan ,  Theodore M. Lyszczarz

IPC: H01L31/0352 ,  H01L21/30 ,  H01L31/0232

CPC classification number: H01L27/144 ,  H01L31/102

Abstract: A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.

Abstract translation: 硅光电检测器包含具有顶表面和底表面的绝缘基底。 硅层位于绝缘基板的顶表面上，其中硅层包含中心区域，中心区域的厚度大于硅层的其余部分。 顶部二氧化硅层位于中心区域的顶表面上。 中心区域的左翼和中心区域的右翼被掺杂。 硅光电探测器还具有位于中心区域内的有源区域，其中有源区域包含定制的晶体缺陷 - 杂质组合和氧原子。

公开(公告)号：US5582701A

公开(公告)日：1996-12-10

申请号：US360260

申请日：1994-12-20

Applicant: Michael W. Geis ,  Stephanie A. Gajar ,  Nancy Geis

Inventor： Michael W. Geis ,  Stephanie A. Gajar ,  Nancy Geis

IPC: B03C5/02 ,  G01N27/447 ,  B01D57/02 ,  G01N27/26

CPC classification number: G01N27/44752 ,  B03C5/026 ,  B03C5/028 ,  Y10S257/912

Abstract: An ionic liquid-channel charge-coupled device that separates ions in a liquid sample according to ion mobility characteristics includes a channel having an inner wall that has a matrix liquid disposed within. An insulating material surrounds the channel, and an introduction element introduces a liquid sample into the channel. The sample is preferably a liquid solution that has at least one ionic specie present in the solution. The device further includes a gating element that establishes at least one charge packet in the channel in response to an externally applied input signal, and a transport element that induces the charge packet to migrate through the channel. The gate element can be a plurality of spaced-apart, electrically conductive, gate structures that are alternately disposable between a high voltage state and a low voltage state. The transport element further includes an application element that applies a variable voltage to the gating element. This application of voltage induces the charge packets to form under the gate structures and, when the voltage applied to an adjacent gate has a higher potential, induces the packet to migrate through the channel in that direction.

公开(公告)号：US07443090B2

公开(公告)日：2008-10-28

申请号：US11237637

申请日：2005-09-28

Applicant: Michael W. Geis ,  Theodore H. Fedynyshyn ,  Sandra J. Deneault ,  Keith E. Krohn ,  Theodore M. Lyszczarz ,  Michael F. Marchant

Inventor： Michael W. Geis ,  Theodore H. Fedynyshyn ,  Sandra J. Deneault ,  Keith E. Krohn ,  Theodore M. Lyszczarz ,  Michael F. Marchant

IPC: H01J1/00

CPC classification number: H01J1/304 ,  H01J1/32

Abstract: A surface-emission cathode formed on an insulating surface having cantilevered, i.e. “undercut,” electrodes. Suitable insulating surfaces include negative electron affinity (NEA) insulators such as glass or diamond. The cathode can operate in a comprised vacuum (e.g., 10−7 Torr) with no bias on the electrodes and low vacuum electric fields (e.g., at least 10 V cm−1). Embodiments of the present invention are inexpensive to fabricate, requiring lithographic resolution of approximately 10 micrometers. These cathodes can be formed over large areas for use in lighting and displays and are suitable for satellite applications, such as cathodes for tethers, thrusters and space-charging neutralizers.

Abstract translation: 形成在具有悬臂的绝缘表面上的表面发射阴极，即“底切”电极。 合适的绝缘表面包括负电子亲和力（NEA）绝缘体，如玻璃或金刚石。 阴极可以在电极和低真空电场（例如，至少10V cm -1 -1以上）没有偏压的情况下在包含的真空（例如，10 -7托）中操作 >）。 本发明的实施例制造成本低廉，需要约10微米的光刻分辨率。 这些阴极可以形成在用于照明和显示器的大面积上，并且适用于卫星应用，例如系绳阴极，推进器和空间充电中和剂。

公开(公告)号：US5900301A

公开(公告)日：1999-05-04

申请号：US779145

申请日：1997-01-03

Applicant: George E. Brandes ,  Jonathan C. Twichell ,  Michael W. Geis ,  John M. Macaulay ,  Robert M. Duboc, Jr. ,  Christopher J. Curtin

Inventor： George E. Brandes ,  Jonathan C. Twichell ,  Michael W. Geis ,  John M. Macaulay ,  Robert M. Duboc, Jr. ,  Christopher J. Curtin

IPC: H01J1/304 ,  H01J9/02 ,  B05D5/12

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319 ,  Y10T428/24124 ,  Y10T428/24198

Abstract: Fabrication of an electron-emitting device entails distributing electron-emissive carbon-containing particles (22) over a non-insulating region (12). The particles can be made electron emissive after the particle distributing step. Particle bonding material (24) is typically provided to bond the particles to the non-insulating region. The particle bonding material can include carbide formed by heating or/and can be created by modifying a layer (32) provided between the non-insulating region and the particles. In one embodiment, the particles emit electrons primarily from graphite or/and amorphous carbon regions. In another embodiment, the particles are made electron-emissive prior to the particle distributing step.

Abstract translation: 电子发射器件的制造需要在非绝缘区域（12）上分布电子发射含碳颗粒（22）。 在颗粒分布步骤之后，颗粒可以被制成电子发射。 通常提供颗粒粘合材料（24）以将颗粒结合到非绝缘区域。 粒子接合材料可以包括通过加热形成的碳化物和/或可以通过改变设置在非绝缘区域和颗粒之间的层（32）而形成的碳化物。 在一个实施方案中，颗粒主要从石墨或/和无定形碳区域发射电子。 在另一个实施方案中，颗粒在颗粒分布步骤之前被制成电子发射的。

公开(公告)号：US5608283A

公开(公告)日：1997-03-04

申请号：US269283

申请日：1994-06-29

Applicant: Jonathan C. Twichell ,  George R. Brandes ,  Michael W. Geis ,  John M. Macaulay ,  Robert M. Duboc, Jr. ,  Christopher J. Curtin

Inventor： Jonathan C. Twichell ,  George R. Brandes ,  Michael W. Geis ,  John M. Macaulay ,  Robert M. Duboc, Jr. ,  Christopher J. Curtin

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319 ,  Y10T428/24124 ,  Y10T428/24198

Abstract: In one electron-emitting device, non-insulating particle bonding material (24) securely bonds electron-emissive carbon-containing particles (22) to an underlying non-insulating region (12). The carbon in each carbon-containing particle is in the form of diamond, graphite, amorphous carbon, or/and silicon carbide. In another electron-emitting device, electron-emissive pillars (22/28) overlie a non-insulating region (12). Each pillar is formed with an electron-emissive particle (22) and an underlying non-insulating pedestal (28).

Abstract translation: 在一个电子发射器件中，非绝缘粒子接合材料（24）将电子发射含碳颗粒（22）牢固地粘合到下面的非绝缘区域（12）上。 每个含碳颗粒中的碳为金刚石，石墨，无定形碳或/和碳化硅的形式。 在另一个电子发射器件中，电子发射柱（22/28）覆盖在非绝缘区（12）上。 每个柱形成有电子发射颗粒（22）和下面的非绝缘基座（28）。

公开(公告)号：US5374834A

公开(公告)日：1994-12-20

申请号：US134965

申请日：1993-10-12

Applicant: Michael W. Geis ,  Stephanie A. Gajar ,  Nancy Geis

Inventor： Michael W. Geis ,  Stephanie A. Gajar ,  Nancy Geis

IPC: B03C5/02 ,  G01N27/447 ,  H01L29/78

CPC classification number: G01N27/44752 ,  B03C5/026 ,  B03C5/028 ,  Y10S257/912

Abstract: An ionic liquid-channel charge-coupled device that separates ions in a liquid sample according to ion mobility characteristics includes a channel having an inner wall that has a matrix liquid disposed within. An insulating material surrounds the channel, and an introduction element introduces a liquid sample into the channel. The sample is preferably a liquid solution that has at least one ionic specie present in the solution. The device further includes a gating element that establishes at least one charge packet in the channel in response to an externally applied input sisal, and a transport element that induces the charge packet to migrate through the channel. The gate element can be a plurality of spaced-apart, electrically conductive, gate structures that are alternately disposable between a high voltage state and a low voltage state. The transport element further includes an application element that applies a variable voltage to the gating element. This application of voltage induces the charge packets to form under the gate structures and, when the voltage applied to an adjacent gate has a higher potential, induces the packet to migrate through the channel in that direction.

Abstract translation: 根据离子迁移率特性分离液体样品中的离子的离子液体通道电荷耦合器件包括具有设置在其内的基质液体的内壁的通道。 绝缘材料围绕通道，引入元件将液体样品引入通道。 样品优选是溶液中存在至少一种离子物质的液体溶液。 该装置还包括门控元件，其响应于外部施加的输入剑麻建立信道中的至少一个充电分组，以及诱导电荷分组迁移通过该信道的传输元件。 栅极元件可以是多个间隔开的导电的栅极结构，其在高电压状态和低电压状态之间交替地是一次性的。 运输元件还包括向选通元件施加可变电压的应用元件。 这种电压的应用引起电荷分组形成在栅极结构之下，并且当施加到相邻栅极的电压具有较高电位时，引起分组沿着该方向迁移通过通道。

公开(公告)号：US5002899A

公开(公告)日：1991-03-26

申请号：US498479

申请日：1990-03-22

Applicant: Michael W. Geis ,  Mordechai Rothschild ,  Daniel J. Ehrlich

Inventor： Michael W. Geis ,  Mordechai Rothschild ,  Daniel J. Ehrlich

IPC: H01L21/04 ,  H01L21/268

CPC classification number: H01L21/043 ,  H01L21/0435 ,  H01L21/268

Abstract: A method for forming ohmic contacts on diamond substrates, where, by irradiating a diamond substrate with radiation having a wavelength in the neighborhood of 193 nm, regions of enhanced electrical conductivity may be formed without substantially heating the substrate surface. Metal films may be applied to obtain ohmic or Schottky type contacts on the irradiated sites. The invention may be used to form regions of anisotropic and isotropic enhanced conductivity. Regions of anisotropic conductivity may be employed as polarizing optical devices.

Abstract translation: 一种用于在金刚石基底上形成欧姆接触的方法，其中通过用金刚石衬底辐射具有193nm附近的波长的辐射，可以在基本上不加热衬底表面的情况下形成增强导电性的区域。 可以施加金属膜以在辐照位置上获得欧姆或肖特基型接触。 本发明可用于形成各向异性和各向同性增强导电性的区域。 可以采用各向异性导电性区域作为偏振光学器件。

公开(公告)号：US4734152A

公开(公告)日：1988-03-29

申请号：US73905

申请日：1987-07-13

Applicant: Michael W. Geis ,  Nikolay N. Efremow ,  Stella W. Pang

Inventor： Michael W. Geis ,  Nikolay N. Efremow ,  Stella W. Pang

IPC: H01L21/306 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/465 ,  B44C1/22 ,  C03C15/00 ,  C23F1/02

CPC classification number: H01L21/30621 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/465

Abstract: A new anisotropic dry etching system using a hot jet tube to heat and dissociate non-reactive source gas to form a directed flux of reactive specie or radicals for etching materials through openings in a resist or a reusable stencil of SiN.sub.x wherein x is in the range of 1.5 to 0.5. Si and GaAs may be etched using Cl.sub.2, F.sub.3, Br.sub.2 or SF.sub.6 source gasses. Pb or Hg, Cd, Te may be etched using n-butane, dimethyl ether or acetone as a source gas for CH.sub.3 radicals. The tube may be formed of tungsten or where fluorine is used as a source gas, an irridium tube is preferred. Alternatively, a tube formed of rhenium or an alloy of rhenium and tungsten is preferred for some applications.

Abstract translation: 一种新的各向异性干蚀刻系统，其使用热喷射管来加热和解离非反应性源气体，以形成反应物质或自由基的定向通量，以通过SiN x的抗蚀剂或可再利用的模板中的开口蚀刻材料，其中x在 为1.5〜0.5。 可以使用Cl2，F3，Br2或SF6源气体来蚀刻Si和GaAs。 可以使用正丁烷，二甲醚或丙酮作为CH3自由基的源气体来蚀刻Pb或Hg，Cd，Te。 管可以由钨形成或者使用氟作为原料气体，优选为铱管。 或者，对于一些应用，优选由铼或铼和钨的合金形成的管。

公开(公告)号：US4670088A

公开(公告)日：1987-06-02

申请号：US828601

申请日：1986-02-11

Applicant: Bor-Yeu Tsaur ,  John C. C. Fan ,  Michael W. Geis

Inventor： Bor-Yeu Tsaur ,  John C. C. Fan ,  Michael W. Geis

IPC: C30B13/00 ,  C30B13/06 ,  C30B27/00 ,  H01L21/20 ,  H01L21/324 ,  C30B19/00

CPC classification number: H01L21/324 ,  C30B13/00 ,  C30B13/06 ,  C30B27/00 ,  C30B29/60 ,  H01L21/2022 ,  Y10S148/134

Abstract: An improved method and apparatus for crystallizing amorphous or polycrystalline material is disclosed. In this invention, a material which is to be crystallized is formed on a substrate and single crystalline seed material is disposed in contact and/or adjacent to or with at least a portion of the material which is to be crystallized. A layer of material which serves as a "wetting agent" is then formed over the material to be crystallized. The structure thus formed is subjected to a heat treatment which melts the material being crystallized and when the material solidifies its crystalline structure is substantially epitaxial based on the seed material. The "wetting agent" layer serves to prevent deleterious balling up of the material during crystallization.

Abstract translation: 公开了一种用于结晶非晶或多晶材料的改进方法和装置。 在本发明中，将要结晶的材料形成在基底上，并且将单晶种子材料设置成接触和/或邻近或与要结晶的材料的至少一部分接触。 然后在要结晶的材料上形成用作“润湿剂”的材料层。 对由此形成的结构进行热处理，该热处理熔化正在结晶的材料，并且当材料固化其晶体结构基于种子材料基本上是外延的。 “润湿剂”层用于防止在结晶过程中材料的有害的滚珠。

公开(公告)号：US5825240A

公开(公告)日：1998-10-20

申请号：US916829

申请日：1997-08-22

Applicant: Michael W. Geis ,  Elliott R. Brown ,  Stephen J. Eglash ,  Christopher L. Dennis

Inventor： Michael W. Geis ,  Elliott R. Brown ,  Stephen J. Eglash ,  Christopher L. Dennis

IPC: H03K3/315

CPC classification number: B82Y10/00 ,  H03K3/315

Abstract: Resonant-tunneling transmission lines in the various architectures rely on discrete or continuous resonant-tunneling heterostructures to actively modify propagating logic signals. One embodiment utilizes amplification of logic signals to counteract ubiquitous losses and distortion associated with any transmission medium. Basically, the logic signal is incrementally reamplified and reshaped as it propagates along the transmission line. Another embodiment is directed to a clocking system that transmits a signal represented by a sinusoid. Then, in proximity to the logic gates or modules, the sinusoid is converted into a square wave that actually clocks the gates and other logic structures. The inventive active transmission line naturally performs this feature, thus enabling clock signal transmission over longer links coupled with sinusoid-to-square wave conversion in a limited area. Still other embodiments implement step or continuous variations in the physical width of the resonant-tunneling transmission line. By manipulating the transmission line width of successive sections of the line, isolation in addition to the logic operation of the input signals is achievable in a simple monolithic circuit design. Further embodiments are directed to oscillator circuits and the control of the characteristics of the generated periodic signal.

Abstract translation: 各种架构中的谐振隧穿传输线依靠离散或连续的谐振隧穿异质结构来主动修改传播逻辑信号。 一个实施例利用逻辑信号的放大来抵消与任何传输介质相关联的普遍存在的损耗和失真。 基本上，逻辑信号在沿着传输线传播时被逐步重新放大并重新形成。 另一个实施例涉及发送由正弦曲线表示的信号的计时系统。 然后，在逻辑门或模块附近，正弦曲线被转换成实际上对门和其他逻辑结构进行时钟的方波。 本发明的有源传输线自然地执行这个特征，因此能够在有限的区域中通过更长的链路进行时钟信号传输与正弦波到方波的转换。 其他实施例实现谐振隧穿传输线的物理宽度的步进或连续变化。 通过操纵线的连续部分的传输线宽度，除了输入信号的逻辑运算之外，在简单的单片电路设计中可实现隔离。 另外的实施例涉及振荡器电路和所生成的周期信号的特性的控制。