公开(公告)号：US07691546B2

公开(公告)日：2010-04-06

申请号：US11662183

申请日：2005-09-08

申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Mikio Takagi ,  Yuichi Fukushima ,  Tadashi Saga

发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Mikio Takagi ,  Yuichi Fukushima ,  Tadashi Saga

IPC分类号： G03F1/00

CPC分类号： G03F1/46 ,  G03F1/58 ,  G03F1/68

摘要： A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.

摘要翻译： 用作光掩模材料的光掩模坯料设置有对透明基板上的曝光光具有透明区域和有效不透明区域的掩模图案。 在透明板上，形成有一层或多层遮光膜，其中有或没有其它膜（A），构成遮光膜的至少一层（B）包括硅和过渡金属作为主要成分，以及 硅与过渡金属的摩尔比为硅：金属= 4-15:1（原子比）。 还提供了具有掩模图案的光掩模，该掩模图案具有透明区域和透明板上曝光光线的有效不透明区域。

公开(公告)号：US20080063950A1

公开(公告)日：2008-03-13

申请号：US11662183

申请日：2005-09-08

申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Mikio Takagi ,  Yuichi Fukushima ,  Tadashi Saga

发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Mikio Takagi ,  Yuichi Fukushima ,  Tadashi Saga

IPC分类号： G03F1/00

CPC分类号： G03F1/46 ,  G03F1/58 ,  G03F1/68

摘要： A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.

摘要翻译： 用作光掩模材料的光掩模坯料设置有对透明基板上的曝光光具有透明区域和有效不透明区域的掩模图案。 在透明板上，形成有一层或多层遮光膜，其中有或没有其它膜（A），构成遮光膜的至少一层（B）包括硅和过渡金属作为主要成分，以及 硅与过渡金属的摩尔比为硅：金属= 4-15:1（原子比）。 还提供了具有掩模图案的光掩模，该掩模图案具有透明区域和透明板上曝光光线的有效不透明区域。

公开(公告)号：US06869500B2

公开(公告)日：2005-03-22

申请号：US10236939

申请日：2002-09-09

申请人： Kwang-Myung Lee ,  Mikio Takagi ,  Jae-Hyuk An ,  Seung-Ki Chae ,  Jea-Wook Kim

发明人： Kwang-Myung Lee ,  Mikio Takagi ,  Jae-Hyuk An ,  Seung-Ki Chae ,  Jea-Wook Kim

IPC分类号： H01L21/3065 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/311 ,  H05H1/00 ,  C23C16/00

CPC分类号： H01L21/02046 ,  H01L21/31116 ,  H01L21/67109

摘要： Disclosed are a method and an apparatus for processing a wafer in manufacturing a semiconductor device and a method and an apparatus for etching a material formed on the wafer, wherein first and second cooling parts adjust an ambient temperature near a plurality of wafers to a first temperature, the wafers are processed by introducing a reaction gas at the first temperature, then, a heating part rapidly raises the temperature of the atmosphere near the wafers from the first temperature to the second temperature to partially separate by-products produced during the processing, the second temperature is maintained to separate most of the by-products from the wafers, and the processing steps are implemented in-situ within the same space. Accordingly, a native oxide layer formed on several wafers can be etched and the reaction by-products can be removed in-situ in the same chamber so productivity is improved.

摘要翻译： 公开了一种用于在制造半导体器件中处理晶片的方法和装置，以及用于蚀刻形成在晶片上的材料的方法和设备，其中第一和第二冷却部件将多个晶片附近的环境温度调节到第一温度 ，通过在第一温度下引入反应气体来处理晶片，然后，加热部分将晶片附近的气氛的温度从第一温度快速升高到第二温度，以部分地分离在处理期间产生的副产物， 维持第二温度以将大部分副产物与晶片分离，并且处理步骤在同一空间内原位实施。 因此，可以蚀刻形成在几个晶片上的自然氧化物层，并且可以在相同的室中原位除去反应副产物，从而提高生产率。

公开(公告)号：US06867147B2

公开(公告)日：2005-03-15

申请号：US10240261

申请日：2001-03-28

申请人： Mikio Takagi

发明人： Mikio Takagi

IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/461

CPC分类号： H01L21/02063 ,  H01L21/31116 ,  H01L21/67017

摘要： A method of removing native oxide film from contact holes of a semiconductor device by using a microwave-excited reactive gas. The method increases throughput. Reactive gas is introduced substantially horizontally into the reactor (20) by way of a chamber (5, 22) arranged as an extension thereof in the vertical direction of the reactor (20) and showing an internal pressure higher than that of the reactor, while the plurality of semiconductor silicon wafers (10) that are arranged in the vertical direction and held to temperature not higher than 323 K are being rotated, and subsequently said reactor is heated (30) to above 373 K.

摘要翻译： 通过使用微波激发的反应气体从半导体器件的接触孔去除自然氧化膜的方法。 该方法增加了吞吐量。 反应气体通过在反应器（20）的垂直方向上作为其延伸部布置的室（5,22）基本上水平地引入反应器（20），并且显示出比反应器的内部压力更高的内部压力，而 在垂直方向上排列并保持不高于323K的多个半导体硅晶片（10）正在旋转，随后所述反应器被加热（30）至高于373K。

公开(公告)号：US5643839A

公开(公告)日：1997-07-01

申请号：US377703

申请日：1995-01-25

申请人： Mikio Takagi

发明人： Mikio Takagi

IPC分类号： H01L21/324 ,  C23C16/46 ,  H01L21/00

CPC分类号： H01L21/67109 ,  C23C16/46

摘要： In a rapid thermal processing (RTP) of a large-diameter wafer, a wafer is heat treated by an upper high-temperature furnace and a lower low-temperature furnace, which are separated from and can be brought into close contact with one another by a relative vertical position adjusting means. The upper high-temperature furnace has an open bottom which is shut by an openable, heat insulating shutter. Height of the apparatus as a whole can be shortened.

摘要翻译： 在大直径晶片的快速热处理（RTP）中，通过上部高温炉和下部低温炉对晶片进行热处理，该上部高温炉和下部低温炉彼此分开并可以彼此紧密接触， 相对垂直位置调整装置。 上部高温炉具有敞开的底部，该敞开的底部由可打开的绝热快门关闭。 整个设备的高度可以缩短。

公开(公告)号：US5209847A

公开(公告)日：1993-05-11

申请号：US590908

申请日：1990-10-01

申请人： Norihiro Kaiya ,  Naoyuki Amaya ,  Yoshishige Murata ,  Mikio Takagi ,  Kazuichi Tsuda ,  Kiyotaka Shigehara ,  Akira Yamada ,  Takayuki Otsu

发明人： Norihiro Kaiya ,  Naoyuki Amaya ,  Yoshishige Murata ,  Mikio Takagi ,  Kazuichi Tsuda ,  Kiyotaka Shigehara ,  Akira Yamada ,  Takayuki Otsu

IPC分类号： B05D1/20 ,  C09K19/56

CPC分类号： B05D1/202 ,  B82Y30/00 ,  B82Y40/00 ,  C09K19/56

摘要： An ultrathin polymeric membrane has a membrane thickness of 10 to 1,000 .ANG.. The membrane is constituted of polycarboxylate and obtained by the spin coating method or by the Langmuir-Blodgett method. The polycarboxylate contains recurrent units represented by the formula (I) ##STR1## wherein R.sub.1 and R.sub.2 represent different groups and each stands for a methyl group or a hydrogen atom, and R represents a hydrocarbon group selected from the group consisting of a branched alkyl group having 3 to 12 carbon atoms, a cycloalkyl group having 3 to 12 carbon atoms, a substituted alkyl group having 2 to 6 carbon atoms, a substituted cycloalkyl group having 3 to 10 carbon atoms and a siloxanic hydrocarbon group.

公开(公告)号：US4625678A

公开(公告)日：1986-12-02

申请号：US740306

申请日：1985-06-03

申请人： Yoshimi Shioya ,  Mamoru Maeda ,  Yasushi Ohyama ,  Mikio Takagi

发明人： Yoshimi Shioya ,  Mamoru Maeda ,  Yasushi Ohyama ,  Mikio Takagi

IPC分类号： C23C16/50 ,  C23C16/448 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  H01L21/285 ,  H01L21/20 ,  C23C13/08

CPC分类号： H01J37/3244 ,  C23C16/5096

摘要： A plasma CVD apparatus for forming a deposited film on a base body by introducing a gas of a compound into a chamber and converting the gas into plasma by applying a high frequency electric power, includes a gas feeding pipe leading from the exterior of the chamber into the interior of the chamber, and a heating device. The heating device heats at least a part of the gas feeding pipe inside the chamber, thereby preventing the gas from condensing or solidifying. With this apparatus, plasma CVD can stably be carried out using gases of various compounds which are liquid or solid at room temperature.

摘要翻译： 一种等离子体CVD装置，其通过将化合物的气体引入室内并通过施加高频电力将气体转化为等离子体而在基体上形成沉积膜，包括从所述室的外部引出的供气管 室的内部和加热装置。 加热装置加热室内的供气管的至少一部分，从而防止气体冷凝或凝固。 使用这种装置，可以使用在室温下为液体或固体的各种化合物的气体来稳定地进行等离子体CVD。

公开(公告)号：US4513026A

公开(公告)日：1985-04-23

申请号：US518329

申请日：1983-08-01

申请人： Hidekazu Miyamoto ,  Yoshimi Shioya ,  Mamoru Maeda ,  Mikio Takagi

发明人： Hidekazu Miyamoto ,  Yoshimi Shioya ,  Mamoru Maeda ,  Mikio Takagi

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/316

CPC分类号： C23C16/45514 ,  C23C16/455 ,  C23C16/45578 ,  H01L21/02129 ,  H01L21/02271 ,  H01L21/31625

摘要： A semiconductor device having a deposited phosphosilicate glass film, containing an insubstantial amount of hydrogen and a low phosphorus concentration, is manufactured at a high mass productivity. This semiconductor device is manufactured by first placing plural substrates for semiconductor devices to be treated in a reaction tube so that the main surfaces of the substrates are substantially vertically aligned with respect to one another and are substantially perpendicularly intersected by the central axis of the reaction tube, the reaction tube being provided with at least two gas feed pipes having plural small openings pierced along the longitudinal direction thereof. Second, a silicon compound gas is introduced through one of the gas feed pipes into the reaction tube and an oxidizing gas is introduced through the other of the gas feed pipes into the reaction tube, while the inside of the reaction tube is maintained a reduced low pressure, whereby phosphosilicate glass films are deposited on the main surfaces of the substrates.

摘要翻译： 具有含有非实质量的氢和低磷浓度的沉积磷硅酸盐玻璃膜的半导体器件以高质量生产率被制造。 该半导体器件通过首先在反应管中放置要处理的半导体器件的多个基板，使得基板的主表面相对于彼此大致垂直取向并且基本上垂直于反应管的中心轴线相交 反应管设置有至少两个气体供给管，其具有沿其纵向方向刺穿的多个小开口。 其次，将硅化合物气体通过气体供给管中的一个引入反应管中，并且将氧化气体通过另一个气体供给管引入反应管中，同时反应管的内部保持较低的 压力，由此磷硅玻璃膜沉积在基板的主表面上。

公开(公告)号：US08007964B2

公开(公告)日：2011-08-30

申请号：US12709116

申请日：2010-02-19

申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Mikio Takagi ,  Yuichi Fukushima ,  Tadashi Saga

发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Mikio Takagi ,  Yuichi Fukushima ,  Tadashi Saga

IPC分类号： G03F1/00

CPC分类号： G03F1/46 ,  G03F1/58 ,  G03F1/68

摘要： A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.

摘要翻译： 用作光掩模材料的光掩模坯料设置有对透明基板上的曝光光具有透明区域和有效不透明区域的掩模图案。 在透明板上，形成有一层或多层遮光膜，其中有或没有其它膜（A），构成遮光膜的至少一层（B）包括硅和过渡金属作为主要成分，以及 硅与过渡金属的摩尔比为硅：金属= 4-15:1（原子比）。 还提供了具有掩模图案的光掩模，该掩模图案具有透明区域和透明板上曝光光线的有效不透明区域。

公开(公告)号：US20100143831A1

公开(公告)日：2010-06-10

申请号：US12709116

申请日：2010-02-19

申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Mikio Takagi ,  Yuichi Fukushima ,  Tadashi Saga

发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Mikio Takagi ,  Yuichi Fukushima ,  Tadashi Saga

IPC分类号： G03F1/00

CPC分类号： G03F1/46 ,  G03F1/58 ,  G03F1/68

摘要： A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.

摘要翻译： 用作光掩模材料的光掩模坯料设置有对透明基板上的曝光光具有透明区域和有效不透明区域的掩模图案。 在透明板上，形成有一层或多层遮光膜，其中有或没有其它膜（A），构成遮光膜的至少一层（B）包括硅和过渡金属作为主要成分，以及 硅与过渡金属的摩尔比为硅：金属= 4-15:1（原子比）。 还提供了具有掩模图案的光掩模，该掩模图案具有透明区域和透明板上曝光光线的有效不透明区域。