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公开(公告)号:US20230299725A1
公开(公告)日:2023-09-21
申请号:US18051980
申请日:2022-11-02
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Masatoshi HASE
CPC classification number: H03F3/19 , H04B3/00 , H03F1/565 , H03H7/38 , H03F3/45071 , H03F2200/541
Abstract: A first transmission line and a third transmission line are disposed at different positions in a thickness direction of a substrate. The third transmission line includes a first end portion connected to one end portion of the first transmission line, and a second end portion that is grounded. The first transmission line is electromagnetically coupled to the third transmission line. The first transmission line has a coil pattern and the third transmission line has a partially open loop pattern.
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公开(公告)号:US20220376665A1
公开(公告)日:2022-11-24
申请号:US17817018
申请日:2022-08-03
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Kenji TAHARA , Syunji YOSHIMI , Kazuhiro IKARASHI , Yusuke TANAKA , Kenichi SHIMAMOTO , Masatoshi HASE
Abstract: The present disclosure facilitates impedance matching between a power amplifier and filters. A radio-frequency circuit includes a power amplifier, a plurality of transmit filters, a switch, a plurality of first matching networks, and a second matching network. The switch switches the plurality of transmit filters to be coupled to the power amplifier. The plurality of first matching networks are coupled between the plurality of transmit filters and the switch. The second matching network is coupled between the power amplifier and the switch. The second matching network includes a transmission line transformer.
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公开(公告)号:US20220182025A1
公开(公告)日:2022-06-09
申请号:US17457290
申请日:2021-12-02
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Hitoshi AKAMINE , Masatoshi HASE
Abstract: An output matching circuit includes: a converter electrically connected to an output end of a power amplifier element to convert an impedance of the output end to an impedance higher than the impedance of the output end by magnetic coupling; and a first filter circuit electrically connected between the output end of the power amplifier element and the converter to make a short circuit in a frequency band different from a predetermined transmission frequency band.
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公开(公告)号:US20210135657A1
公开(公告)日:2021-05-06
申请号:US17089766
申请日:2020-11-05
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Takayuki TSUTSUI , Satoshi TANAKA , Kiichiro TAKENAKA , Masatoshi HASE
Abstract: An active balun circuit includes first and second transistors having emitters electrically coupled to each other and configured to output differential signals and a circuit element coupled between the connection point of the emitter of the first transistor and the emitter of the second transistor and a reference potential. The impedance of the circuit element at a particular frequency of the input signal appears significantly larger than impedances at other frequencies. An input signal from an input terminal is inputted to the base of the first transistor. The reference potential is applied to the base of the second transistor. A supply voltage is applied to the collector of the first transistor and the collector of the second transistor. A signal from the collector of the first transistor and a signal from the collector of the second transistor are outputted as the differential signals.
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公开(公告)号:US20200350873A1
公开(公告)日:2020-11-05
申请号:US16930418
申请日:2020-07-16
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Masatoshi HASE
Abstract: A power amplifier module includes a combining circuit including a combiner. The combining circuit further includes a first inductor connected in series between an output terminal of a first amplifier and the combiner, a second inductor connected in series between an output terminal of a second amplifier and the combiner, and a second capacitor having an end connected to the combiner and another end grounded. A phase of a third signal from the output terminal of the first amplifier to the second amplifier through the combiner is delayed by about 45 degrees in the first inductor and the second capacitor, and is delayed by about 45 degrees in the second inductor and the second capacitor. A phase of the third signal from the output terminal of the first amplifier to the second amplifier through the first capacitor is advanced by about 90 degrees.
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公开(公告)号:US20200343863A1
公开(公告)日:2020-10-29
申请号:US16928084
申请日:2020-07-14
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Masatoshi HASE
Abstract: Provided is a power amplifier circuit that reduces the effect of intermodulation distortion without necessarily increase in the circuit size. The power amplifier circuit includes a first amplifier that amplifies a first signal and output a second signal, an extraction circuit that extracts a second-harmonic wave included in the second signal, a phase adjustment circuit that adjusts the phase of the extracted second-harmonic wave, and a power combiner that combines the second-harmonic wave of the adjusted phase with a third signal and output the first signal.
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公开(公告)号:US20200169226A1
公开(公告)日:2020-05-28
申请号:US16777381
申请日:2020-01-30
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Masatoshi HASE
IPC: H03F1/30 , H03F3/195 , H03F3/24 , H03F3/191 , H03F3/19 , H01L29/737 , H01L29/08 , H01L23/66 , H03G3/30
Abstract: A power amplification module includes: a first bipolar transistor in which a radio frequency signal is input to a base and an amplified signal is output from a collector; a second bipolar transistor that is thermally coupled with the first bipolar transistor and that imitates operation of the first bipolar transistor; a third bipolar transistor in which a first control voltage is supplied to a base and a first bias current is output from an emitter; a first resistor that generates a third control voltage corresponding to a collector current of the second bipolar transistor at a second terminal; and a fourth bipolar transistor in which a power supply voltage is supplied to a collector, the third control voltage is supplied to a base, and a second bias current is output from an emitter.
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公开(公告)号:US20200014334A1
公开(公告)日:2020-01-09
申请号:US16574686
申请日:2019-09-18
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Masatoshi HASE
Abstract: Provided is a power amplification circuit that includes: a first transistor that has an emitter to which a first radio frequency signal is supplied, a base to which a first DC control current or DC control voltage is supplied and a collector that outputs a first output signal that corresponds to the first radio frequency signal; a first amplifier that amplifies the first output signal and outputs a first amplified signal; and a first control circuit that supplies the first DC control current or DC control voltage to the base of the first transistor in order to control output of the first output signal.
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公开(公告)号:US20190097590A1
公开(公告)日:2019-03-28
申请号:US16201407
申请日:2018-11-27
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Masatoshi HASE
Abstract: A power amplification circuit includes: a first amplifier that is input with a first signal and outputs a second signal; a bias circuit that supplies a bias current or voltage to the first amplifier; and a control voltage generating circuit that generates a control voltage in accordance with the first signal. The bias circuit includes a first transistor that outputs the bias current or voltage, a second transistor provided between the emitter or source of the first transistor and ground, and a third transistor that is supplied with the control voltage and that supplies a first current or voltage to the second transistor. The value of the first current or voltage when the signal level is a first level is larger than the value of the first current or voltage when the signal level is a second level. The first level is higher than the second level.
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公开(公告)号:US20190052233A1
公开(公告)日:2019-02-14
申请号:US16162954
申请日:2018-10-17
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Masatoshi HASE
IPC: H03F1/30 , H03F3/24 , H01L29/08 , H01L29/737 , H03F3/19 , H03F3/191 , H03F3/195 , H03G3/30 , H01L23/66 , H04B1/04 , H04W88/02
CPC classification number: H03F1/302 , H01L23/66 , H01L29/0804 , H01L29/737 , H03F3/19 , H03F3/191 , H03F3/195 , H03F3/24 , H03F3/245 , H03F2200/18 , H03F2200/447 , H03F2200/451 , H03F2200/555 , H03G3/3042 , H04B2001/0408 , H04W88/02
Abstract: A power amplification module includes: a first bipolar transistor in which a radio frequency signal is input to a base and an amplified signal is output from a collector; a second bipolar transistor that is thermally coupled with the first bipolar transistor and that imitates operation of the first bipolar transistor; a third bipolar transistor in which a first control voltage is supplied to a base and a first bias current is output from an emitter; a first resistor that generates a third control voltage corresponding to a collector current of the second bipolar transistor at a second terminal; and a fourth bipolar transistor in which a power supply voltage is supplied to a collector, the third control voltage is supplied to a base, and a second bias current is output from an emitter.
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