Heat spreader with optimized coefficient of thermal expansion and/or heat transfer

    公开(公告)号:US10217691B2

    公开(公告)日:2019-02-26

    申请号:US15238192

    申请日:2016-08-16

    Applicant: nLIGHT, Inc.

    Abstract: Methods, systems and an apparatus relating to a heat spreader to be coupled to a heat source having a heat source coefficient of thermal expansion (HS CTE), the heat spreader comprising an anisotropic material having a high expansion axis. The heat spreader also including a surface to be coupled to the heat source, wherein the high expansion axis of the anisotropic material is oblique to the surface of the heat spreader and wherein the high expansion axis of the anisotropic material is oriented at a first angle of rotation about a first axis of the heat spreader wherein the first angle of rotation is selected to optimize a match of a first CTE of the heat spreader with the HS CTE.

    ANGLED DBR-GRATING LASER/AMPLIFIER WITH ONE OR MORE MODE-HOPPING REGIONS

    公开(公告)号:US20180175588A1

    公开(公告)日:2018-06-21

    申请号:US15579109

    申请日:2016-06-06

    Applicant: nLIGHT, Inc.

    Inventor: Manoj Kanskar

    Abstract: A semiconductor laser device is disclosed that includes a laser resonator situated to produce a laser beam, with the laser resonator including an angled distributed Bragg reflector (a-DBR) region including first and second ends defining an a-DBR region length corresponding to a Bragg resonance condition with the first end being uncleaved and including a first mode hop region having a first end optically coupled to the a-DBR region first end and extending a first mode hop region length associated with the a-DBR region length to a second end so as to provide a variable longitudinal mode selection for the laser beam.

    DUAL-SIDED OPTICAL PACKAGE
    36.
    发明公开

    公开(公告)号:US20240053554A1

    公开(公告)日:2024-02-15

    申请号:US18222949

    申请日:2023-07-17

    Applicant: NLIGHT, INC.

    CPC classification number: G02B6/4268 G02B6/4202

    Abstract: Various embodiments provide apparatuses, systems, and methods related to a dual-sided optical package. The package may include a base plate with a first side and a second side opposite the first side. The base plate may have a coolant channel positioned between the first side and the second side. A first set of optics may be coupled with the first side of the base plate, and a second set of optics may be coupled with the second side of the base plate. Other embodiments may be described and/or claimed.

    TANDEM PUMPED FIBER AMPLIFIER
    38.
    发明申请

    公开(公告)号:US20220181835A1

    公开(公告)日:2022-06-09

    申请号:US17555144

    申请日:2021-12-17

    Applicant: NLIGHT, INC.

    Abstract: In an example, a tandem pumped fiber amplifier may include a seed laser, one or more diode pumps, and a single or plural active core fiber. The single or plural active core fiber may include a first section to operate as an oscillator and a second different section to operate as a power amplifier. The one or more diode pumps may be optically coupled to the first section of the single or plural active core fiber, and the seed laser may be optically coupled to the single active core or an innermost core of the plural active core fiber.

    Bidirectionally emitting semiconductor laser devices

    公开(公告)号:US11063404B1

    公开(公告)日:2021-07-13

    申请号:US16570297

    申请日:2019-09-13

    Applicant: nLIGHT, Inc.

    Inventor: Manoj Kanskar

    Abstract: Disclosed are embodiments of bidirectionally emitting semiconductor (BEST) laser architectures including higher order mode suppression structures. The higher order mode suppression structures are centrally located and extend from an inner transition boundary, which may be established by confronting high reflector (HR) facets in some embodiments or a central plane defining two sides of a unitary, bidirectional optical cavity in other embodiments. Examples of the higher order mode suppression structures include narrow regions of bidirectional flared laser oscillator waveguide (FLOW) devices, which are also referred to as reduced mode diode (REM) devices; high-index regions of bidirectional higher-order mode suppressed laser (HOMSL) devices; and non- or less-etched gain-guided lateral waveguides of bidirectional low divergence semiconductor laser (LODSL) devices. The aforementioned devices may also include scattering features, distributed feedback (DFB) gratings, distributed Bragg reflection (DBR) gratings, and combination thereof that also act as supplemental higher order mode suppression structures.

    Low divergence high brightness broad area lasers

    公开(公告)号:US10658813B2

    公开(公告)日:2020-05-19

    申请号:US16001734

    申请日:2018-06-06

    Applicant: nLIGHT, Inc.

    Abstract: Apparatus comprise a semiconductor waveguide extending along a longitudinal axis and including a first waveguide section and a second waveguide section, wherein a lateral refractive index difference defining the semiconductor waveguide is larger for the first waveguide section than for the second waveguide section, and an output facet situated on the longitudinal axis of the semiconductor waveguide so as to emit a laser beam propagating in the semiconductor waveguide, wherein the first waveguide section is situated between the second waveguide section and the output facet and wherein the lateral refractive index difference suppresses emission of higher order transverse modes in the laser beam emitted by the output facet.

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